公开(公告)号：US20180294724A1

公开(公告)日：2018-10-11

申请号：US15854061

申请日：2017-12-26

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Syed Wasif MEHDI ,  Neil GIBSON ,  Antonio PRIEGO

IPC分类号： H02M3/158 ,  G05F1/62 ,  H02M1/08 ,  H02M3/137 ,  H02M3/338 ,  H03K17/16 ,  H02J1/10

CPC分类号： H02M3/1582 ,  G05F1/62 ,  H02J1/10 ,  H02M1/08 ,  H02M3/137 ,  H02M3/158 ,  H02M3/1588 ,  H02M3/338 ,  H02M2001/0032 ,  H03K17/164 ,  H03K17/166

摘要： A controller including a voltage synthesizer for a switching regulator includes a synthesizer input to be coupled to an input of the regulator. First and second replica switching transistors are connected at a first node. A resistor couples between the first node and a second node, and a capacitor couples between the second node and ground. A transconductance stage compares a voltage sampled onto the capacitor to the output voltage of the regulator and generates an output signal in response to the comparison. A first switch couples between first and second inputs of the transconductance stage. The first switch is turned on during each cycle of operation of the voltage synthesizer to reset the capacitor voltage to the output voltage of the regulator.

公开(公告)号：USRE46997E1

公开(公告)日：2018-08-14

申请号：US14739617

申请日：2015-06-15

申请人： Sony Corporation

发明人： Masahiro Igarashi ,  Tetsuo Motomura ,  Ryuji Kaneko ,  Makoto Fujiwara ,  Yoshinori Tanaka ,  Hiromi Ogata

IPC分类号： H03K17/72 ,  H03K17/16 ,  H03K19/00 ,  H03K17/10

CPC分类号： H03K17/164 ,  H03K17/102 ,  H03K19/0016

摘要： A semiconductor integrated circuit includes: a first voltage line on which a specific one of a power-supply voltage and a reference voltage appears; a second voltage line; a plurality of circuit cells each receiving power generated as a difference between a voltage appearing on the second voltage line and the other one of the power-supply voltage and the reference voltage; a plurality of switch transistors connected in parallel between the first and second voltage lines to serve as switch transistors including switch transistors each having different conducting-state resistances; and a switch conduction control section for controlling a transition of each of the switch transistors from a non-conducting state to a conducting state by turning on the switch transistors at separate points of time.

公开(公告)号：US10014760B2

公开(公告)日：2018-07-03

申请号：US15395370

申请日：2016-12-30

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Shailendra Kumar Baranwal ,  Alan Stephen Bass ,  Vighnesh Rudra Das ,  Anant Shankar Kamath ,  Abhijeeth Aarey Premanath

IPC分类号： H02M1/08 ,  H02M3/335

CPC分类号： H02M1/08 ,  H02M1/36 ,  H02M3/33515 ,  H03K17/163 ,  H03K17/164

摘要： One example includes a switch circuit. The switch circuit includes a transistor configured to activate in response to an activation voltage at an activation terminal of the transistor. The switch circuit also includes a current source coupled to the activation terminal and being configured to generate an activation current. The switch circuit further includes a driver control circuit interconnecting the activation terminal and a voltage rail. The driver control circuit includes digital counter logic configured to cycle through a predetermined number of count values based on an oscillator signal. The driver control circuit is configured to adjust an amplitude of the activation voltage at each of the predetermined number of count values based on the activation current to provide a soft-start activation of the transistor.

公开(公告)号：US20170323881A1

公开(公告)日：2017-11-09

申请号：US15584467

申请日：2017-05-02

申请人： Infineon Technologies AG

发明人： Winfried Bakalski

IPC分类号： H01L27/02 ,  H03K17/687 ,  H01L29/417

CPC分类号： H01L27/0288 ,  H01L27/0285 ,  H01L29/41725 ,  H03K17/04106 ,  H03K17/102 ,  H03K17/122 ,  H03K17/164 ,  H03K17/284 ,  H03K17/6874 ,  H03K2217/0009

摘要： A switch includes an input terminal and an output terminal. The switch also includes a first stack having transistors coupled in series, and a second stack having transistors coupled in series. The first stack and the second stack are connected in parallel with one another.

公开(公告)号：US20170309619A1

公开(公告)日：2017-10-26

申请号：US15492279

申请日：2017-04-20

申请人： Infineon Technologies AG

发明人： Markus Bina ,  Franz-Josef Niedernostheide ,  Alexander Philippou

IPC分类号： H01L27/082 ,  H01L27/02 ,  H01L29/10 ,  H03K17/567

CPC分类号： H01L27/082 ,  H01L25/16 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7397 ,  H01L29/78 ,  H03K17/164 ,  H03K17/302 ,  H03K17/567

摘要： An embodiment of a semiconductor device comprises a transistor cell array in a semiconductor body. The transistor cell array comprises transistor cell units. Each of the transistor cell units comprises a control terminal and first and second load terminals, respectively. The transistor cell units are electrically connected in parallel, and the control terminals of the transistor cells units are electrically connected. A first group of the transistor cell units includes a first threshold voltage. A second group of the transistor cell units includes a second threshold voltage larger than the first threshold voltage. A channel width of a transistor cell unit of the first group is smaller than a channel width of a transistor cell unit of the second group.

公开(公告)号：US09793824B2

公开(公告)日：2017-10-17

申请号：US14797329

申请日：2015-07-13

申请人： Kabushiki Kaisha Toshiba

发明人： Kazuto Takao ,  Tatsuo Shimizu ,  Takashi Shinohe

IPC分类号： H02M3/315 ,  H02M7/537 ,  H03K17/04 ,  H03K17/0412 ,  H03K17/042 ,  H03K17/16

CPC分类号： H02M7/537 ,  H03K17/0406 ,  H03K17/04123 ,  H03K17/04206 ,  H03K17/164 ,  H03K17/166 ,  H03K17/168 ,  H03K2217/0036

摘要： A gate driving circuit of embodiments is provided with a first transistor which controls a gate-on voltage applied to a gate electrode of a switching device, a second transistor which controls a gate-off voltage applied to the gate electrode of the switching device, a driving logic circuit which controls turn-on/turn-off of the first and second transistors, a first power source which supplies the gate-on voltage to the gate electrode when the first transistor is turned on, a second power source which supplies the gate-off voltage to the gate electrode when the second transistor is turned on, a first gate resistance variable circuit in which a plurality of field effect transistors is connected in parallel, a second gate resistance variable circuit in which a plurality of field effect transistors is connected in parallel, and a gate resistance control circuit which controls gate voltages of a plurality of field effect transistors.

公开(公告)号：US09755628B2

公开(公告)日：2017-09-05

申请号：US14989810

申请日：2016-01-07

申请人： DELTA ELECTRONICS, INC.

发明人： Chih-I Hu

IPC分类号： G05F1/56 ,  G05F5/00 ,  H03K17/042 ,  H03K5/24 ,  H02M3/156

CPC分类号： H03K17/04206 ,  H02M3/156 ,  H03K5/24 ,  H03K17/04123 ,  H03K17/163 ,  H03K17/164

摘要： A driving circuit includes a main output terminal electrically coupled to a switch element, a first voltage generating circuit and a second voltage generating circuit. The first voltage generating circuit is electrically coupled with the main output terminal. The first voltage generating circuit comprises a first comparator and a voltage divider circuit. The first voltage generating circuit is configured to generate a first voltage at the main output terminal during a predetermined time interval of a turn-on duration of a switching period. The second voltage generating circuit is electrically coupled with the main output terminal. The second voltage generating circuit is configured to generate a second voltage at the main output terminal during a remaining time interval of the turn-on duration of the switching period. The predetermined time interval is ahead of the remaining time interval, and the first voltage is higher than the second voltage.

公开(公告)号：US09748951B2

公开(公告)日：2017-08-29

申请号：US15195707

申请日：2016-06-28

申请人： IMEC VZW

发明人： Xiaoqiang Zhang ,  Mark Ingels

IPC分类号： H04L27/12 ,  H03K17/687 ,  H03F1/08 ,  H03F1/14 ,  H03F1/32 ,  H03F3/193 ,  H03F3/21 ,  H03F3/217 ,  H03F3/24 ,  H03M1/66 ,  H04L27/20 ,  H03K17/16 ,  H03K17/62 ,  H03M1/08 ,  H03M1/74

CPC分类号： H03K17/687 ,  H03F1/086 ,  H03F1/14 ,  H03F1/3205 ,  H03F3/193 ,  H03F3/211 ,  H03F3/2171 ,  H03F3/2178 ,  H03F3/245 ,  H03F2200/231 ,  H03F2200/324 ,  H03F2200/336 ,  H03F2200/451 ,  H03F2200/519 ,  H03F2200/525 ,  H03F2200/61 ,  H03F2200/75 ,  H03K17/161 ,  H03K17/164 ,  H03K17/6292 ,  H03M1/0863 ,  H03M1/66 ,  H03M1/742 ,  H04L27/20

摘要： A conversion circuit is disclosed. In one aspect, the conversion circuit includes a first input terminal for receiving a digital signal. The conversion circuit includes a second input terminal for receiving a bias voltage signal. The conversion circuit includes an output terminal for outputting a current. The conversion circuit includes a first and a second switch transistor connected to the first input terminal for receiving the digital signal. The conversion circuit includes a first and a second current source transistor connected to the second input terminal for receiving the bias voltage signal. The conversion circuit further includes a first branch, wherein the first switch transistor is connected to the output terminal via the first current source transistor. The conversion circuit further includes a second branch, wherein the second current source transistor is connected to the output terminal via the second switch transistor.

公开(公告)号：US09741702B2

公开(公告)日：2017-08-22

申请号：US14950411

申请日：2015-11-24

申请人： Transphorm Inc.

发明人： Yifeng Wu

IPC分类号： H01L25/00 ,  H01L25/07 ,  H05K1/02 ,  H03K17/16 ,  H01L23/12 ,  H01L23/367 ,  H01L27/088 ,  H01L29/20 ,  H01L29/78 ,  H01L23/498 ,  H01L25/11 ,  H05K1/16 ,  H01L23/552 ,  H01L23/64 ,  H01L25/16

CPC分类号： H01L25/50 ,  H01L23/12 ,  H01L23/3675 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/642 ,  H01L25/074 ,  H01L25/117 ,  H01L25/16 ,  H01L25/165 ,  H01L27/0883 ,  H01L29/2003 ,  H01L29/7827 ,  H01L2224/48091 ,  H01L2924/13055 ,  H01L2924/30107 ,  H03K17/164 ,  H03K2217/0045 ,  H05K1/0218 ,  H05K1/0263 ,  H05K1/162 ,  H05K2201/10015 ,  H05K2201/10166 ,  H05K2201/10545 ,  H01L2924/00014 ,  H01L2924/00

摘要： An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a second transistor encased in a second package, the second transistor being mounted over a second conductive portion of the second package. The component further includes a substrate comprising an insulating layer between a first metal layer and a second metal layer. The first package is on one side of the substrate with the first conductive portion being electrically connected to the first metal layer, and the second package is on another side of the substrate with the second conductive portion being electrically connected to the second metal layer. The first package is opposite the second package, with at least 50% of a first area of the first conductive portion being opposite a second area of the second conductive portion.

公开(公告)号：US20170222638A1

公开(公告)日：2017-08-03

申请号：US15195122

申请日：2016-06-28

申请人： STMicroelectronics S.R.L.

发明人： Aldo Davide Gariboldi

IPC分类号： H03K17/14 ,  G05F3/16

CPC分类号： H03K17/145 ,  G05F3/16 ,  H03K17/04206 ,  H03K17/164 ,  H03K17/167

摘要： A driver for a power field-effect transistor includes a first and second circuits that apply respective charge currents to a gate of the power field-effect transistor when a control signal has a first logic value and the voltage between the gate and the source is smaller than a first threshold voltage and greater than a second threshold voltage. Third and fourth circuits apply respective discharge currents to the gate when the control signal has a second logic value and the voltage between the gate and the source is greater than a third threshold voltage and smaller than a fourth threshold voltage. The driver may include at least one field-effect transistor configured to generate at least one of the first, second, third or fourth threshold voltage.