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公开(公告)号:US20240213935A1
公开(公告)日:2024-06-27
申请号:US18088091
申请日:2022-12-23
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Sumit Dubey , Rejin Kanjavalappil Raveendranathath , Shaik Asif Basha
CPC classification number: H03F3/2173 , H03F1/3205 , H03F2200/03 , H03F2200/351
Abstract: Examples of amplifiers and components thereof are configured to adjust the OFF-pulse widths of a high-duty cycle pulse width modulated (PWM) output signal and the ON-pulse widths of a low-duty cycle PWM output signal. Such control is carried out using high- and low-side (HS and LS) detectors. The HS detector coupled to the control terminal of an HS transistor detects when the gate-to-source voltage (Vgs) of the HS transistor drops below a threshold and outputs an HS detection signal to adjust the OFF-pulse widths of the high-duty cycle PWM output signal. An LS detector coupled to the control terminal of an LS transistor detects when the Vgs of the LS transistor drops below the threshold and outputs a LS detection signal to adjust the ON-pulse widths of the low-duty cycle PWM output signal.
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公开(公告)号:US11996872B2
公开(公告)日:2024-05-28
申请号:US18141891
申请日:2023-05-01
Applicant: QUALCOMM Incorporated
Inventor: Alexander Dorosenco
CPC classification number: H04B1/04 , H03F1/0227 , H03F1/3205 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/68 , H04W52/52 , H03F2200/105 , H03F2200/294 , H03F2200/336 , H03F2200/451 , H03F2200/462
Abstract: Techniques for generating a power tracking supply voltage for a circuit (e.g., a power amplifier) are disclosed. The circuit may process multiple transmit signals being sent simultaneously on multiple carriers at different frequencies. In one exemplary design, an apparatus includes a power tracker and a power supply generator. The power tracker determines a power tracking signal based on inphase (I) and quadrature (Q) components of a plurality of transmit signals being sent simultaneously. The power supply generator generates a power supply voltage based on the power tracking signal. The apparatus may further include a power amplifier (PA) that amplifies a modulated radio frequency (RF) signal based on the power supply voltage and provides an output RF signal.
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公开(公告)号:US20240154578A1
公开(公告)日:2024-05-09
申请号:US18385029
申请日:2023-10-30
Applicant: Qorvo US, Inc.
Inventor: Adnan Zolj , Jinsung Choi
CPC classification number: H03F1/3205 , H03F3/45183 , H03K17/162 , H03F2200/451
Abstract: A conductance network is disclosed for switching circuitry. In some embodiments, the conductance network includes a first conductance stage and a second conductance stage. The first conductance stage is configured to define a first voltage-to-current response such that the first voltage-to-current response defines a first deadband region between a first pair of quasi-quadratic or quasi-linear regions. The second conductance stage is configured to define a second voltage-to-current response such that the second voltage-to-current response defines a second deadband region between a second pair of quasi-quadratic or quasi-linear regions, wherein the second deadband region is wider than the first deadband region.
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公开(公告)号:US20240146272A1
公开(公告)日:2024-05-02
申请号:US18406064
申请日:2024-01-05
Applicant: pSemi Corporation
Inventor: Emre Ayranci , Miles Sanner
CPC classification number: H03G3/3036 , H03F1/223 , H03F1/3205 , H03F3/193 , H03F3/211 , H03F3/72 , H03G1/0023 , H03G1/0029 , H03G1/0088 , H03G3/001 , H03F2200/156 , H03F2200/159 , H03F2200/294 , H03F2200/451 , H03F2200/489 , H03F2200/492 , H03F2200/61 , H03F2203/7239 , H03G3/3052 , H03G2201/504
Abstract: An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET.
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公开(公告)号:US20240072735A1
公开(公告)日:2024-02-29
申请号:US17894065
申请日:2022-08-23
Applicant: Apple Inc.
Inventor: Omar E Elaasar
IPC: H03F1/32
CPC classification number: H03F1/3211 , H03F1/3205 , H03F2200/451
Abstract: An electronic device may include wireless circuitry having one or more differential circuits. A differential circuit can include first and second input transistors, first and second degeneration components, and first and second distortion cancellation transistors cross-coupled with the first and second input transistors. The first distortion cancellation transistor can be configured to sense a voltage at the first input transistor and to produce corresponding currents for cancelling a differential mode harmonic distortion current flowing through the second input transistor and for cancelling a common mode harmonic distortion current flowing through the first input transistor. The second distortion cancellation transistor can be configured to sense a voltage at the second input transistor and to produce corresponding currents for cancelling a differential mode harmonic distortion current flowing through the first input transistor and for cancelling a common mode harmonic distortion current flowing through the second input transistor.
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公开(公告)号:US20240039495A1
公开(公告)日:2024-02-01
申请号:US18361078
申请日:2023-07-28
Applicant: ROHM CO., LTD.
Inventor: Shinichi SAITO
CPC classification number: H03F3/45183 , H03F3/45273 , H03G1/0088 , H03F1/3205
Abstract: An equalizer circuit includes a variable gain equalizer circuit. A third transistor MN for gain adjustment is coupled between a source of a first transistor that constitutes an input differential pair of the variable gain equalizer circuit, and a first current source IB. A fourth transistor MN for gain adjustment is coupled between a source of a second transistor that constitutes the input differential pair, and a second current source IB. A first bias voltage Vb is supplied to the gates of the third transistor MN and the fourth transistor MN, so as to enable DC gain control of the variable gain equalizer circuit.
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公开(公告)号:US11870405B2
公开(公告)日:2024-01-09
申请号:US17503710
申请日:2021-10-18
Applicant: pSemi Corporation
Inventor: Emre Ayranci , Miles Sanner
CPC classification number: H03G3/3036 , H03F1/223 , H03F1/3205 , H03F3/193 , H03F3/211 , H03F3/72 , H03G1/0023 , H03G1/0029 , H03G1/0088 , H03G3/001 , H03F2200/156 , H03F2200/159 , H03F2200/294 , H03F2200/451 , H03F2200/489 , H03F2200/492 , H03F2200/61 , H03F2203/7239 , H03G3/3052 , H03G2201/504
Abstract: An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET.
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公开(公告)号:US11870398B2
公开(公告)日:2024-01-09
申请号:US17475934
申请日:2021-09-15
Applicant: pSemi Corporation
Inventor: Tero Tapio Ranta , Christopher C. Murphy , Jeffrey A. Dykstra
IPC: H03F1/22 , H03F3/16 , H03F3/195 , H03F1/56 , H03F3/213 , H03F1/32 , H03F1/30 , H03F1/02 , H03F3/193
CPC classification number: H03F1/22 , H03F1/0227 , H03F1/223 , H03F1/301 , H03F1/3205 , H03F1/3247 , H03F1/56 , H03F3/16 , H03F3/193 , H03F3/195 , H03F3/213 , H03F1/302 , H03F2200/18
Abstract: Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.
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公开(公告)号:US20230378916A1
公开(公告)日:2023-11-23
申请号:US18318879
申请日:2023-05-17
Applicant: HANGZHOU GEO-CHIP TECHNOLOGY CO., LTD.
Inventor: Chun Geik TAN , Sy-Chyuan HWU , Ruili WU , Yang YANG
CPC classification number: H03F1/3205 , H03F3/45179 , H03F2200/451
Abstract: An operational amplifier, any of a pair of amplification circuits of its output-stage amplification circuit unit comprises: a first and second transistors, a capacitor and a DC bias circuit; a control electrode of the first transistor is connected with a corresponding output terminal of a preceding-stage amplification circuit unit, a first electrode thereof is connected with a first power terminal and a second electrode thereof is connected with an output terminal of an amplification circuit of the output-stage amplification circuit unit; an output terminal of the DC bias circuit is connected with a control electrode of the second transistor, a first electrode of which is connected with a second power terminal, and a second electrode thereof is connected with the output terminal; both ends of the capacitor are respectively connected with the control electrodes of the first and second transistors; and the first and second transistors are of opposite polarities.
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公开(公告)号:US20230246595A1
公开(公告)日:2023-08-03
申请号:US18298626
申请日:2023-04-11
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Nitin Agarwal , Aniruddha Roy
CPC classification number: H03F1/0233 , H03F1/3205 , H03F2200/504
Abstract: A circuit is provided. In some examples, the circuit includes a first transistor having a gate and a drain coupled together and a current source coupled to the drain of the first transistor. A second transistor has a drain coupled to a source of the first transistor. A third transistor has a gate coupled to the gate of the first transistor. A fourth transistor has a drain coupled to a source of the third transistor and a gate of the fourth transistor is coupled to a gate of the second transistor. In some examples, the third transistor is configured to limit a first current between the third transistor and the fourth transistor based on an output voltage.
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