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公开(公告)号：US11881828B2
公开(公告)日：2024-01-23
申请号：US17671374
申请日：2022-02-14
申请人： pSemi Corporation
发明人： Jing Li , Emre Ayranci , Miles Sanner
CPC分类号： H03G3/3036 , H03F1/223 , H03F1/3205 , H03F3/193 , H03F3/211 , H03F3/72 , H03G1/0023 , H03G1/0029 , H03G1/0088 , H03G3/001 , H03F2200/156 , H03F2200/159 , H03F2200/294 , H03F2200/451 , H03F2200/489 , H03F2200/492 , H03F2200/61 , H03F2203/7239 , H03G3/3052 , H03G2201/504
摘要： A multi-gain LNA with inductive source degeneration is presented. The inductive source degeneration is provided via a tunable degeneration network that includes an inductor in parallel with one or more switchable shunting networks. Each shunting network includes a shunting capacitor that can selectively be coupled in parallel to the inductor. A capacitance of the shunting capacitor is calculated so that a combined impedance of the inductor and the shunting capacitor at a narrowband frequency of operation is effectively an inductance. The inductance is calculated according to a desired gain of the LNA. According to one aspect, the switchable shunting network includes a resistor in series connection with the shunting capacitor to provide broadband frequency response stability of the tunable degeneration network. According to another aspect, the LNA includes a plurality of selectable branches to further control gain of the LNA.
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公开(公告)号：US20240022220A1
公开(公告)日：2024-01-18
申请号：US18352136
申请日：2023-07-13
申请人： pSemi Corporation
发明人： Miles Sanner , Emre Ayranci
CPC分类号： H03F3/195 , H03F3/211 , H03F1/56 , H03F3/193 , H03F3/72 , H03F1/223 , H03F3/16 , H03F1/0211 , H03F2203/7209 , H03F2200/391 , H03F2200/249 , H03F2200/421 , H03F2200/489 , H03F2200/372 , H03F2200/111 , H03F2200/222 , H03F2200/231 , H03F2200/267 , H03F2200/294 , H03F2200/387 , H03F2200/396 , H03F2200/451 , H03F2200/492 , H04B1/16
摘要： A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g m of the input stage of the amplifier, thus improving the noise figure of the amplifier.
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公开(公告)号：US20240007060A1
公开(公告)日：2024-01-04
申请号：US17855443
申请日：2022-06-30
申请人： pSemi Corporation
发明人： Emre Ayranci , Mengsheng Rui , Phanindra Yerramilli , Jubaid Qayyum , Vijay Katta , Miles Sanner
CPC分类号： H03F1/565 , H03F3/195 , H03F3/72 , H03F2200/451 , H03F2200/294 , H03F2203/7236
摘要： Circuits and methods for a radio frequency amplifier, such as an LNA, that include a wideband coupled input impedance matching network. One embodiment includes a first inductor coupled between a first terminal and a first node, the first terminal couplable to a degeneration terminal of an amplifier core; a second inductor coupled between a second terminal and either the first node or a second node, the second terminal couplable to an input terminal of the amplifier core; a third inductor coupled between the first node and a third terminal, the third terminal couplable to a reference potential; and, in a variant embodiment, a fourth inductor coupled between the second node and a fourth terminal, the fourth terminal couplable to the reference potential; wherein the first inductor and the second inductor are mutually coupled. Some embodiments allow multiple modes to allow tradeoffs of gain versus linearity and NF characteristics.
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公开(公告)号：US20240007058A1
公开(公告)日：2024-01-04
申请号：US17855386
申请日：2022-06-30
申请人： pSemi Corporation
发明人： Emre Ayranci , Mengsheng Rui , Miles Sanner , Steve Gao
CPC分类号： H03F1/565 , H03F3/195 , H03H7/00 , H03F2200/222 , H03F2200/451 , H03F2200/387 , H03F2200/294
摘要： Circuits and methods for an amplifier (particularly LNAs) that achieve wideband output impedance matching and high gain while simultaneously rejecting out-of-band (OOB) harmonic frequencies. Some embodiments allow multiple modes of operation to allow selection of gain versus linearity characteristics. One aspect of the present invention is improvement of the linearity and sensitivity of a whole RF “front end” (RFFE) receiver chain by suppressing OOB gain within an LNA component at higher order harmonic frequencies. Another aspect of the present invention are new wideband and ultra-wideband LNA load circuits that, while achieving high frequency OOB rejection, maintain in-band high gain and wideband output impedance matching at the same time. Yet another aspect of the present invention are new ultra-wideband LNA output impedance matching circuits.
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公开(公告)号：US20220393650A1
公开(公告)日：2022-12-08
申请号：US17337227
申请日：2021-06-02
申请人： pSemi Corporation
发明人： Emre Ayranci , Mengsheng Rui , Jubaid Qayyum
摘要： Circuits and methods for a multi-gain mode amplifier, particularly an LNA, that achieves wideband output impedance matching and high gain while maintaining low power and a low NF in a highest gain mode, and which can switch to one or more lower gain modes that achieve higher linearity with lower power. In a highest gain mode, an inductor is selectively inserted between the amplified-signal terminal of an amplification core and an output LC output matching network. The inductor, when inserted, provides wideband output impedance matching, functioning as a series peaking inductor; accordingly, the inserted inductor delays current flow to the output capacitor and lowers the rise time of signal changes across the output capacitor. In addition, higher gain can be achieved compared to a conventional LC output impedance matching topology due to a higher impedance at the amplified-signal terminal of the amplification core.
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公开(公告)号：US20210409055A1
公开(公告)日：2021-12-30
申请号：US17366614
申请日：2021-07-02
申请人： pSemi Corporation
发明人： Emre Ayranci , Miles Sanner , Phanindra Yerramilli
摘要： Methods and devices addressing design of wideband LNAs with gain modes are disclosed. The disclosed teachings can be used to reconfigure RF receiver front-end to operate in various applications imposing stringent and conflicting requirements. Wideband and narrowband input and output matching with gain modes using a combination of the same hardware and a switching network are also disclosed. The described methods and devices also address carrier aggregation requirements and provide solutions that can be used both in single-mode and split-mode operations.
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公开(公告)号：US20210336584A1
公开(公告)日：2021-10-28
申请号：US17314836
申请日：2021-05-07
申请人： pSemi Corporation
发明人： Emre Ayranci , Miles Sanner
摘要： A receiver front end amplifier capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors, and gate to ground capacitors for each leg can be used to further improve the matching performance of the invention.
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公开(公告)号：US10938349B1
公开(公告)日：2021-03-02
申请号：US16692750
申请日：2019-11-22
申请人： pSemi Corporation
摘要： Various methods and circuital arrangements for reducing a turn ON time of a cascode amplifier are presented. According to one aspect, a configurable switching arrangement coupled to a cascode transistor of the amplifier shorts a gate of the cascode transistor to a reference ground during an inactive mode of operation of the amplifier. During an active mode of operation of the amplifier, the configurable switching arrangement couples a gate capacitor to the gate of the cascode transistor that is pre-charged to a voltage that is higher than a gate biasing voltage to the cascode transistor, which ensures that cascode transistor turns ON much quicker than the traditional method of grounding the cap, hence provide a final current flow through the cascode amplifier in a shorter time by not limiting the turn ON time of the input transistor. The gate biasing voltage is coupled to the gate capacitor via a resistor. A relationship between the pre-charged voltage, and minimum saturation voltages and threshold voltages of the transistors of the cascode amplifier is also provided.
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公开(公告)号：US20200220567A1
公开(公告)日：2020-07-09
申请号：US16242870
申请日：2019-01-08
申请人： pSemi Corporation
发明人： Emre Ayranci , Miles Sanner , Phanindra Yerramilli
摘要： Methods and devices addressing design of reconfigurable wideband LNAs to meet stringent gain, noise figure, and linearity requirements with multiple gain modes are disclosed. The disclosed teachings can be used to reconfigure RF receiver front-end to operate in various applications imposing stringent and conflicting requirements, such as 5G NR radios. Wideband and narrowband input and output matching with gain modes using a combination of the same hardware and a switching network are also disclosed.
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公开(公告)号：US10700658B2
公开(公告)日：2020-06-30
申请号：US16029364
申请日：2018-07-06
申请人： pSemi Corporation
发明人： Emre Ayranci , Miles Sanner , Ke Li , James Francis McElwee , Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
IPC分类号： H04B1/04 , H04B1/40 , H01B1/00 , H04W88/06 , H03H7/38 , H03H7/01 , H04B1/00 , H04W72/04 , H04W28/06 , H04L5/00
摘要： A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.
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