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公开(公告)号:US20240356540A1
公开(公告)日:2024-10-24
申请号:US18626649
申请日:2024-04-04
发明人: Mackenzie Brian Cook , Lui Ray Lam
IPC分类号: H03K17/10 , H03F3/24 , H03K17/082
CPC分类号: H03K17/102 , H03F3/245 , H03K17/0822 , H03F2200/451
摘要: Aspects and embodiments disclosed herein include a supply circuit for a radio frequency system comprising a first coupling diode coupled between an input node of a first voltage supply and a first input node of a voltage clamp of the supply circuit, an output of the first coupling diode being coupled to the first input node of the voltage clamp, and a second coupling diode coupled between an input node of a second voltage supply and the first input node of the voltage clamp, an output of the second coupling diode being coupled to the input node of the voltage clamp.
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2.
公开(公告)号:US20240348248A1
公开(公告)日:2024-10-17
申请号:US18235507
申请日:2023-08-18
发明人: Boripann Srivongse
IPC分类号: H03K17/687 , H03K17/10 , H03K17/16
CPC分类号: H03K17/6871 , H03K17/102 , H03K17/162
摘要: A waveshape circuit for a motor includes at least a first transistor, a second transistor, a first subcircuit, and a second subcircuit. The first transistor is configured to, during turn on, substantially pass a current through the waveshape circuit and block the current, during turn off, for a transition of a power circuit of the motor. The second transistor is configured to, during turn on, substantially block the current through the waveshape circuit and substantially pass current, during turn off, for the transition for the power circuit of the motor according to a transfer function. The first subcircuit is coupled to the first transistor and configured to determine a first slope region of the transfer function for the waveshape circuit. The second subcircuit is coupled to the first transistor and configured to determine a second slope region of the transfer function for the waveshape circuit.
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公开(公告)号:US20240340011A1
公开(公告)日:2024-10-10
申请号:US18295498
申请日:2023-04-04
申请人: NXP USA, Inc.
发明人: David Edward Bien , Xu Jason Ma
IPC分类号: H03K19/0185 , H03K17/10 , H03K17/687
CPC分类号: H03K19/018528 , H03K17/102 , H03K17/6872
摘要: A switching device may include an input terminal, an output terminal, a primary switching transistor coupled between the input terminal and the output terminal, logic circuitry configured to receive a control signal to selectively activate the switching device, a first cascode arrangement coupled between the logic circuitry and a first reference voltage supply, and a second cascode arrangement coupled between the input terminal and the primary switching transistor. The first cascode arrangement may include cascode transistors having gate terminals coupled to a first voltage divider coupled between the first reference voltage supply and a second reference voltage supply that is coupled to the logic circuitry. The second cascode arrangement may include a first cascode transistor coupled to a fixed voltage at the first voltage divider and second and third cascode transistors coupled to variable cascode bias voltages at a second voltage divider coupled to a variable voltage input.
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公开(公告)号:US20240340001A1
公开(公告)日:2024-10-10
申请号:US18610589
申请日:2024-03-20
发明人: Dieter Draxelmayr , Herwig Wappis
IPC分类号: H03K17/30 , H03K17/081 , H03K17/10
CPC分类号: H03K17/302 , H03K17/08104 , H03K17/102
摘要: A clamp circuit including a first transistor having a control connection coupled to a first reference voltage terminal and a first controlled connection coupled to an input voltage terminal. The clamp circuit includes a second transistor having a control connection configured to receive a control voltage that is dependent on a current flowing through the first transistor, a first controlled connection coupled to the input voltage terminal, and a second controlled connection coupled to a second reference voltage terminal.
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公开(公告)号:US12107572B2
公开(公告)日:2024-10-01
申请号:US18091343
申请日:2022-12-29
发明人: Chih-Sheng Chen , Hsien-Huang Tsai , Meng-Lun Li
CPC分类号: H03K17/102 , H03K2217/0054
摘要: A switch device includes a first switch unit, a second switch unit, a first sub-switch unit, a second sub-switch unit, a first resistor and a second resistor. The first switch unit is coupled to a radio-frequency terminal and coupled to the second switch unit in cascode. The first sub-switch unit is coupled to the second sub-switch unit in cascode. The first sub-switch unit is further coupled between control terminals of the first switch unit and the second switch unit. The first sub-switch unit is further coupled to a node between the first resistor and the first switch unit. The second sub-switch unit is further coupled to a node between the second resistor and the second switch unit. When the first switch unit and the second switch unit are transitioned, the first sub-switch unit and the second sub-switch unit can be turned on to discharge and/or neutralize accumulated charges.
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公开(公告)号:US20240322814A1
公开(公告)日:2024-09-26
申请号:US18604239
申请日:2024-03-13
IPC分类号: H03K17/16 , H03K17/10 , H03K17/687
CPC分类号: H03K17/162 , H03K17/102 , H03K17/6872
摘要: A buffer circuit for driving a GaN power switch includes an input node to receive an input signal and an output node to produce a gate signal for the GaN power switch. The buffer includes a push-pull stage that includes a first transistor coupled between a supply voltage node and the output node, a second transistor coupled between the supply voltage node and the output node, a third transistor coupled between the output node and a reference voltage node, and a fourth transistor coupled between the output node and the reference voltage node. The buffer includes a pre-buffer stage configured to receive the input signal and to produce respective driving signals for the first, second, third and fourth transistors to produce the gate signal at the output node in four consecutive phases.
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公开(公告)号:US20240275385A1
公开(公告)日:2024-08-15
申请号:US18167279
申请日:2023-02-10
发明人: Santosh SHARMA , Mei Yu Soh
IPC分类号: H03K19/0185 , H03K17/10 , H03K17/687 , H03K19/00 , H03K19/017
CPC分类号: H03K19/018535 , H03K17/102 , H03K17/6871 , H03K19/0013 , H03K19/01721
摘要: A GaN logic circuit may include an input node receiving an input voltage, a first pull up transistor pulling up an output voltage in response to the input voltage, and a first depletion mode transistor having a first gate to which a first gate voltage is applied and a second gate to which a second gate voltage is applied. The first depletion mode transistor may control the first pull up transistor in response to a gate voltage difference between the first gate voltage and the second gate voltage. The logic device may further include a capacitor having a first end coupled to the first depletion mode transistor and a second end coupled to the first pull up transistor.
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公开(公告)号:US20240267043A1
公开(公告)日:2024-08-08
申请号:US18316291
申请日:2023-05-12
申请人: DB HiTek Co., Ltd.
发明人: Sang Mok LEE , Hyun Sup JUNG , Seung Hyun KOU
IPC分类号: H03K17/16 , H03K17/10 , H03K17/687
CPC分类号: H03K17/162 , H03K17/102 , H03K17/687
摘要: Disclosed is a low-voltage detection floating N-well bias circuit. The circuit includes a power detector configured to detect states of first power (VDD) and second power (DVDD) at different power levels; a switch configured to perform a switching operation according to the states of the first power (VDD) and the second power (DVDD); and a voltage output circuit configured to output the first power (VDD) or the second power (DVDD) as an N-well bias voltage according to the states of the first power (VDD) and the second power (DVDD) and the switching operation of the switch. Accordingly, when the first power (VDD) and the second power (DVDD) are supplied and the second power (DVDD) has a low voltage state, the floating N-well bias circuit can continuously bias an N-well with the second power (DVDD), without dropping the second power (DVDD).
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公开(公告)号:US20240267041A1
公开(公告)日:2024-08-08
申请号:US18430830
申请日:2024-02-02
申请人: NEXPERIA B.V.
IPC分类号: H03K17/10 , H03K19/0185
CPC分类号: H03K17/102 , H03K19/018528 , H03K2217/0054
摘要: A pass gate circuit arranged for providing an input to an output based on a control signal, the pass gate circuit including a pass gate switch circuit including a P-Metal Oxide Semiconductors (PMOS) Field Effect Transistor (FE), PMOS FET, cascaded in parallel with an NMOS FET, the pass gate switch circuit is arranged to provide the input to the output, and includes a control circuit including two in series cascaded inverters, an output of a first of the two inverters is provided to a gate of the PMOS FET and an output of a second of the two inverters is provided to a gate of the NMOS FET, and the inverters are powered by a supply voltage.
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10.
公开(公告)号:US20240128968A1
公开(公告)日:2024-04-18
申请号:US18328251
申请日:2023-06-02
申请人: pSemi Corporation
发明人: Tero Tapio Ranta , Shawn Bawell , Robert W. Greene , Christopher N. Brindle , Robert Mark Englekirk
IPC分类号: H03K17/16 , H01F21/12 , H01G4/002 , H01G7/00 , H01L23/522 , H01L27/06 , H01L27/12 , H03H7/01 , H03H7/38 , H03H11/28 , H03J3/20 , H03K17/10 , H03K17/687 , H03M1/10
CPC分类号: H03K17/162 , H01F21/12 , H01G4/002 , H01G7/00 , H01L23/5223 , H01L27/0629 , H01L27/1203 , H01L28/60 , H03H7/0153 , H03H7/38 , H03H11/28 , H03J3/20 , H03K17/102 , H03K17/687 , H03M1/1061 , H03J2200/10 , H03M1/804
摘要: Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.
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