公开(公告)号：US09224671B2

公开(公告)日：2015-12-29

申请号：US14522154

申请日：2014-10-23

Applicant: Transphorm Inc.

Inventor： Primit Parikh ,  Yuvaraj Dora ,  Yifeng Wu ,  Umesh Mishra ,  Nicholas Fichtenbaum ,  Rakesh K. Lal

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/12 ,  H01L21/18 ,  H01L23/34 ,  H01L29/10 ,  H01L29/16 ,  H01L29/20 ,  H01L29/778 ,  H01L21/02 ,  H01L21/48 ,  H01L21/762 ,  H01L29/30 ,  H01L23/373

CPC classification number: H01L23/34 ,  H01L21/02118 ,  H01L21/0254 ,  H01L21/486 ,  H01L21/76254 ,  H01L23/3732 ,  H01L23/3738 ,  H01L29/0657 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/30 ,  H01L29/66431 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive.

Abstract translation: III-N器件用III-N层，其上的电极，与III-N层和电极相邻的钝化层，与钝化层和电极相邻的厚绝缘层，能够转移大量的高导热载体 远离III-N器件的热量，以及厚绝缘层和载体之间的结合层。 接合层将厚绝缘层附着到载体上。 厚的绝缘层可以具有精确控制的厚度并且是导热的。

公开(公告)号：US08895423B2

公开(公告)日：2014-11-25

申请号：US14288682

申请日：2014-05-28

Applicant: Transphorm, Inc.

Inventor： Yuvaraj Dora

IPC: H01L21/28 ,  H01L21/322 ,  H01L21/44 ,  H01L29/66 ,  H01L29/47

CPC classification number: H01L29/872 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/475 ,  H01L29/66219 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/861

Abstract: A diode is described with a III-N material structure, an electrically conductive channel in the III-N material structure, two terminals, wherein a first terminal is an anode adjacent to the III-N material structure and a second terminal is a cathode in ohmic contact with the electrically conductive channel, and a dielectric layer over at least a portion of the anode. The anode comprises a first metal layer adjacent to the III-N material structure, a second metal layer, and an intermediary electrically conductive structure between the first metal layer and the second metal layer. The intermediary electrically conductive structure reduces a shift in an on-voltage or reduces a shift in reverse bias current of the diode resulting from the inclusion of the dielectric layer. The diode can be a high voltage device and can have low reverse bias currents.

Abstract translation: 以III-N材料结构描述二极管，III-N材料结构中的导电通道，两个端子，其中第一端子是与III-N材料结构相邻的阳极，第二端子是阴极 与导电通道欧姆接触，以及在阳极的至少一部分上的电介质层。 阳极包括与III-N材料结构相邻的第一金属层，第二金属层和在第一金属层和第二金属层之间的中间导电结构。 中间导电结构减少了导通电压的偏移，或减少了由包含电介质层导致的二极管的反向偏置电流的偏移。 二极管可以是高电压器件，并且可以具有低反向偏置电流。

公开(公告)号：US20140273422A1

公开(公告)日：2014-09-18

申请号：US14288682

申请日：2014-05-28

Applicant: Transphorm, Inc.

Inventor： Yuvaraj Dora

IPC: H01L29/47 ,  H01L29/66

CPC classification number: H01L29/872 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/475 ,  H01L29/66219 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/861

Abstract: A diode is described with a III-N material structure, an electrically conductive channel in the III-N material structure, two terminals, wherein a first terminal is an anode adjacent to the III-N material structure and a second terminal is a cathode in ohmic contact with the electrically conductive channel, and a dielectric layer over at least a portion of the anode. The anode comprises a first metal layer adjacent to the III-N material structure, a second metal layer, and an intermediary electrically conductive structure between the first metal layer and the second metal layer. The intermediary electrically conductive structure reduces a shift in an on-voltage or reduces a shift in reverse bias current of the diode resulting from the inclusion of the dielectric layer. The diode can be a high voltage device and can have low reverse bias currents.

Abstract translation: 以III-N材料结构描述二极管，III-N材料结构中的导电通道，两个端子，其中第一端子是与III-N材料结构相邻的阳极，第二端子是阴极 与导电通道欧姆接触，以及在阳极的至少一部分上的电介质层。 阳极包括与III-N材料结构相邻的第一金属层，第二金属层和在第一金属层和第二金属层之间的中间导电结构。 中间导电结构减少了导通电压的偏移，或减少了由包含电介质层导致的二极管的反向偏置电流的偏移。 二极管可以是高电压器件，并且可以具有低反向偏置电流。

公开(公告)号：US20160043211A1

公开(公告)日：2016-02-11

申请号：US14920059

申请日：2015-10-22

Applicant: Transphorm Inc.

Inventor： Srabanti Chowdhury ,  Umesh Mishra ,  Yuvaraj Dora

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/417 ,  H01L23/31 ,  H01L23/29 ,  H01L29/423 ,  H01L29/20 ,  H01L29/04

CPC classification number: H01L29/7787 ,  H01L21/28114 ,  H01L21/283 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/28593 ,  H01L21/76804 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66462 ,  H01L29/778 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III-N semiconductor HEMT device includes an electrode-defining layer on a III-N material structure. The electrode-defining layer has a recess with a first sidewall proximal to the drain and a second sidewall proximal to the source, each sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a larger width than a portion of the recess proximal to the III-N material structure. An electrode is in the recess, the electrode including an extending portion over the first sidewall. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The first sidewall forms a first effective angle relative to the surface of the III-N material structure and the second sidewall forms a second effective angle relative to the surface of the III-N material structure, the second effective angle being larger than the first effective angle.

Abstract translation: III-N半导体HEMT器件包括在III-N材料结构上的电极限定层。 电极限定层具有凹槽，其具有靠近漏极的第一侧壁和靠近源极的第二侧壁，每个侧壁包括多个台阶。 远离III-N材料结构的凹部的一部分具有比靠近III-N材料结构的凹部的一部分更大的宽度。 电极在凹槽中，电极包括在第一侧壁上的延伸部分。 电极限定层的一部分位于延伸部分和III-N材料结构之间。 第一侧壁相对于III-N材料结构的表面形成第一有效角度，并且第二侧壁相对于III-N材料结构的表面形成第二有效角度，第二有效角度大于第一有效角度 角度。

公开(公告)号：US09224805B2

公开(公告)日：2015-12-29

申请号：US14530204

申请日：2014-10-31

Applicant: Transphorm Inc.

Inventor： Umesh Mishra ,  Srabanti Chowdhury ,  Yuvaraj Dora

IPC: H01L29/02 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778 ,  H01L29/872 ,  H01L21/76 ,  H01L29/417 ,  H01L29/423 ,  H01L29/20

CPC classification number: H01L29/0623 ,  H01L21/76 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: Semiconductor devices with guard rings are described. The semiconductor devices may be, e.g., transistors and diodes designed for high-voltage applications. A guard ring is a floating electrode formed of electrically conducting material above a semiconductor material layer. A portion of an insulating layer is between at least a portion of the guard ring and the semiconductor material layer. A guard ring may be located, for example, on a transistor between a gate and a drain electrode. A semiconductor device may have one or more guard rings.

Abstract translation: 描述具有保护环的半导体器件。 半导体器件可以是例如设计用于高电压应用的晶体管和二极管。 保护环是由半导体材料层上方的导电材料形成的浮动电极。 绝缘层的一部分位于保护环和半导体材料层的至少一部分之间。 保护环可以位于例如栅极和漏极之间的晶体管上。 半导体器件可以具有一个或多个保护环。

公开(公告)号：US09171730B2

公开(公告)日：2015-10-27

申请号：US14179788

申请日：2014-02-13

Applicant: Transphorm Inc.

Inventor： Srabanti Chowdhury ,  Umesh Mishra ,  Yuvaraj Dora

IPC: H01L21/338 ,  H01L21/283 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L21/28 ,  H01L21/768 ,  H01L21/285 ,  H01L29/417 ,  H01L29/04 ,  H01L29/06 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L21/28114 ,  H01L21/283 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/28593 ,  H01L21/76804 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66462 ,  H01L29/778 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III-N semiconductor HEMT device includes an electrode-defining layer on a III-N material structure. The electrode-defining layer has a recess with a first sidewall proximal to the drain and a second sidewall proximal to the source, each sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a larger width than a portion of the recess proximal to the III-N material structure. An electrode is in the recess, the electrode including an extending portion over the first sidewall. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The first sidewall forms a first effective angle relative to the surface of the III-N material structure and the second sidewall forms a second effective angle relative to the surface of the III-N material structure, the second effective angle being larger than the first effective angle.

Abstract translation: III-N半导体HEMT器件包括在III-N材料结构上的电极限定层。 电极限定层具有凹槽，其具有靠近漏极的第一侧壁和靠近源极的第二侧壁，每个侧壁包括多个台阶。 远离III-N材料结构的凹部的一部分具有比靠近III-N材料结构的凹部的一部分更大的宽度。 电极在凹槽中，电极包括在第一侧壁上的延伸部分。 电极限定层的一部分位于延伸部分和III-N材料结构之间。 第一侧壁相对于III-N材料结构的表面形成第一有效角度，并且第二侧壁相对于III-N材料结构的表面形成第二有效角度，第二有效角度大于第一有效角度 角度。

公开(公告)号：US09171836B2

公开(公告)日：2015-10-27

申请号：US14478504

申请日：2014-09-05

Applicant: Transphorm Inc.

Inventor： Rakesh K. Lal ,  Robert Coffie ,  Yifeng Wu ,  Primit Parikh ,  Yuvaraj Dora ,  Umesh Mishra ,  Srabanti Chowdhury ,  Nicholas Fichtenbaum

IPC: H03K17/687 ,  H01L27/02 ,  H01L25/00 ,  H01L21/8236 ,  H01L27/06 ,  H01L49/02 ,  H01L29/778 ,  H03K17/10 ,  H01L29/423 ,  H01L29/872 ,  H01L29/20

CPC classification number: H01L27/0288 ,  H01L21/8236 ,  H01L25/00 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/2003 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/7786 ,  H01L29/872 ,  H01L2924/0002 ,  H03K17/102 ,  H03K2017/6875 ,  Y10T29/49117 ,  H01L2924/00

Abstract: An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor.

Abstract translation: 电子部件包括耗尽型晶体管，增强型晶体管和电阻。 耗尽型晶体管具有比增强型晶体管更高的击穿电压。 电阻器的第一端子电连接到增强型晶体管的源极，并且电阻器的第二端子和耗尽型晶体管的源极电连接到增强型晶体管的漏极。 耗尽型晶体管的栅极可以电连接到增强型晶体管的源极。

公开(公告)号：US09142659B2

公开(公告)日：2015-09-22

申请号：US14211104

申请日：2014-03-14

Applicant: Transphorm Inc.

Inventor： Yuvaraj Dora ,  Yifeng Wu

IPC: H01L29/872 ,  H01L29/778 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/861 ,  H01L21/768 ,  H01L21/283 ,  H01L21/285

CPC classification number: H01L29/778 ,  H01L21/283 ,  H01L21/28581 ,  H01L21/76804 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/6609 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861 ,  H01L29/872

Abstract: A III-N semiconductor device can include an electrode-defining layer having a thickness on a surface of a III-N material structure. The electrode-defining layer has a recess with a sidewall, the sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a first width, and a portion of the recess proximal to the III-N material structure has a second width, the first width being larger than the second width. An electrode is in the recess, the electrode including an extending portion over the sidewall of the recess. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The sidewall forms an effective angle of about 40 degrees or less relative to the surface of the III-N material structure.

Abstract translation: III-N半导体器件可以包括在III-N材料结构的表面上具有厚度的电极限定层。 电极限定层具有带侧壁的凹部，该侧壁包括多个台阶。 远离III-N材料结构的凹部的一部分具有第一宽度，并且靠近III-N材料结构的凹部的一部分具有第二宽度，第一宽度大于第二宽度。 电极在凹槽中，电极包括在凹槽的侧壁上的延伸部分。 电极限定层的一部分位于延伸部分和III-N材料结构之间。 侧壁相对于III-N材料结构的表面形成约40度或更小的有效角度。

公开(公告)号：US20140099757A1

公开(公告)日：2014-04-10

申请号：US14102750

申请日：2013-12-11

Applicant: Transphorm Inc.

Inventor： Primit Parikh ,  Yuvaraj Dora ,  Yifeng Wu ,  Umesh Mishra ,  Nicholas Fichtenbaum ,  Rakesh K. Lal

IPC: H01L21/02 ,  H01L21/48 ,  H01L29/66

CPC classification number: H01L23/34 ,  H01L21/02118 ,  H01L21/0254 ,  H01L21/486 ,  H01L21/76254 ,  H01L23/3732 ,  H01L23/3738 ,  H01L29/0657 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/30 ,  H01L29/66431 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive.

Abstract translation: III-N器件用III-N层，其上的电极，与III-N层和电极相邻的钝化层，与钝化层和电极相邻的厚绝缘层，能够转移大量的高导热载体 远离III-N器件的热量，以及厚绝缘层和载体之间的结合层。 接合层将厚绝缘层附着到载体上。 厚的绝缘层可以具有精确控制的厚度并且是导热的。

公开(公告)号：US20150041864A1

公开(公告)日：2015-02-12

申请号：US14524299

申请日：2014-10-27

Applicant: Transphorm, Inc.

Inventor： Yuvaraj Dora

IPC: H01L29/872 ,  H01L29/205 ,  H01L29/47 ,  H01L29/20

CPC classification number: H01L29/872 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/475 ,  H01L29/66219 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/861

Abstract: A diode is described with a III-N material structure, an electrically conductive channel in the III-N material structure, two terminals, wherein a first terminal is an anode adjacent to the III-N material structure and a second terminal is a cathode in ohmic contact with the electrically conductive channel, and a dielectric layer over at least a portion of the anode. The anode comprises a first metal layer adjacent to the III-N material structure, a second metal layer, and an intermediary electrically conductive structure between the first metal layer and the second metal layer. The intermediary electrically conductive structure reduces a shift in an on-voltage or reduces a shift in reverse bias current of the diode resulting from the inclusion of the dielectric layer. The diode can be a high voltage device and can have low reverse bias currents.

Abstract translation: 以III-N材料结构描述二极管，III-N材料结构中的导电通道，两个端子，其中第一端子是与III-N材料结构相邻的阳极，第二端子是阴极 与导电通道欧姆接触，以及在阳极的至少一部分上的电介质层。 阳极包括与III-N材料结构相邻的第一金属层，第二金属层和在第一金属层和第二金属层之间的中间导电结构。 中间导电结构减少了导通电压的偏移，或减少了由包含电介质层导致的二极管的反向偏置电流的偏移。 二极管可以是高电压器件，并且可以具有低反向偏置电流。