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公开(公告)号:US10062766B1
公开(公告)日:2018-08-28
申请号:US15866492
申请日:2018-01-10
发明人: Jung-Tse Tsai , Heng-Kuang Lin
IPC分类号: H01L29/00 , H01L29/66 , H01L29/20 , H01L29/06 , H01L21/768 , H01L21/02 , H01L29/872
CPC分类号: H01L29/66212 , H01L21/022 , H01L21/76805 , H01L29/0657 , H01L29/0684 , H01L29/2003 , H01L29/205 , H01L29/66143 , H01L29/872 , H01L2924/12032
摘要: A hetero-junction Schottky diode device includes a buffer layer, at least one channel layer, at least one barrier layer and a Schottky metal layer. The buffer layer is disposed on a substrate. The at least one channel layer is disposed on the buffer layer. The at least one barrier layer is disposed on the at least one channel layer. Besides, multiple strip openings are configured to penetrate through the at least one barrier layer and at least one channel layer. The Schottky metal layer is disposed on the at least one barrier layer, across the strip openings and fills in the strip openings.
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公开(公告)号:US09991341B2
公开(公告)日:2018-06-05
申请号:US15363616
申请日:2016-11-29
发明人: Arnaud Yvon
IPC分类号: H01L29/06 , H01L21/02 , H01L21/306 , H01L21/322 , H01L29/20 , H01L29/66 , H01L29/36 , H01L29/872
CPC分类号: H01L29/0661 , H01L21/02002 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02579 , H01L21/02664 , H01L21/30612 , H01L21/30621 , H01L21/30625 , H01L21/3228 , H01L29/2003 , H01L29/36 , H01L29/66212 , H01L29/872
摘要: A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.
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公开(公告)号:US09985143B2
公开(公告)日:2018-05-29
申请号:US15382562
申请日:2016-12-16
发明人: Hongwei Chen
IPC分类号: H01L29/872 , H01L29/40 , H01L29/66 , H01L29/417 , H01L29/20 , H01L29/205 , H01L29/778
CPC分类号: H01L29/872 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/417 , H01L29/66212 , H01L29/66219 , H01L29/778
摘要: A Schottky diode comprises: a substrate; a first semiconductor layer located on the substrate; a second semiconductor layer located on the first semiconductor layer, two-dimensional electron gas being formed at an interface between the first semiconductor layer and the second semiconductor layer; a cathode located on the second semiconductor layer and forming an ohmic contact with the second semiconductor layer; a first passivation dielectric layer located on the second semiconductor layer; a field plate groove formed in the first passivation dielectric layer; and an anode covering the field plate groove and a portion of the first passivation dielectric layer.
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公开(公告)号:US09922838B2
公开(公告)日:2018-03-20
申请号:US15116041
申请日:2015-02-10
IPC分类号: H01L21/3063 , H01L21/465 , H01L29/00 , H01L21/322
CPC分类号: H01L21/30635 , H01L21/3063 , H01L21/3228 , H01L21/465 , H01L29/00 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/66204 , H01L29/66212 , H01L29/66333 , H01L29/7395 , H01L29/868 , H01L29/872
摘要: Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.
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公开(公告)号:US09887086B2
公开(公告)日:2018-02-06
申请号:US15616382
申请日:2017-06-07
申请人: ABB Schweiz AG
发明人: Renato Minamisawa , Munaf Rahimo
IPC分类号: H01L21/20 , H01L29/16 , H01L21/04 , H01L29/872 , H01L29/06
CPC分类号: H01L21/0485 , H01L21/048 , H01L21/0495 , H01L29/0619 , H01L29/1608 , H01L29/2003 , H01L29/401 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66212 , H01L29/872
摘要: A method for manufacturing a wide bandgap junction barrier Schottky diode having an anode side and a cathode side is provided, wherein an (n+) doped cathode layer is arranged on the cathode side, at least on p doped anode layer is arranged on the anode side, an (n−) doped drift layer is arranged between the cathode layer and the at least one anode layer, which drift layer extends to the anode side, wherein the following manufacturing steps are performed: a) providing an (n+) doped wide bandgap substrate, b) creating the drift layer on the cathode layer, c) creating the at least one anode layer on the drift layer, d) applying a first metal layer on the anode side on top of the drift layer for forming a Schottky contact, characterized in, that e) creating a second metal layer on top of at least one anode layer, wherein after having created the first and the second metal layer, a metal layer on top of the at least one anode layer has a second thickness and a metal layer on top of the drift layer has a first thickness, wherein the second thickness is smaller than the first thickness, f) then performing a first heating step at a first temperature, by which due the second thickness being smaller than the first thickness an ohmic contact is formed at the interface between the second metal layer and the at least one anode layer, wherein performing the first heating step such that a temperature below the first metal layer is kept below a temperature for forming an ohmic contact.
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公开(公告)号:US20180026144A1
公开(公告)日:2018-01-25
申请号:US15658034
申请日:2017-07-24
申请人: HexaTech, Inc.
发明人: Baxter Moody , Seiji Mita , Jinqiao Xie
IPC分类号: H01L29/872 , H01L29/20 , H01L29/66
CPC分类号: H01L29/872 , H01L29/2003 , H01L29/66212 , H01L29/66462
摘要: The invention provides a power semiconductor device including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm−2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and a power semiconductor structure comprising at least one doped AlxGa1-xN layer overlying the aluminum nitride single crystalline substrate.
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公开(公告)号:US09876011B2
公开(公告)日:2018-01-23
申请号:US15256938
申请日:2016-09-06
IPC分类号: H01L29/872 , H01L27/06 , H01L29/10 , H01L29/40 , H01L29/66 , H01L29/739
CPC分类号: H01L27/0664 , H01L27/0727 , H01L29/0649 , H01L29/0692 , H01L29/1095 , H01L29/1608 , H01L29/2003 , H01L29/401 , H01L29/407 , H01L29/408 , H01L29/6606 , H01L29/66143 , H01L29/66212 , H01L29/66348 , H01L29/7397 , H01L29/8613 , H01L29/872 , H01L29/8725
摘要: A semiconductor device comprising: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type provided on the first semiconductor region; an insulating portion provided on the first semiconductor region; a third semiconductor region of the second conductivity type provided on the second semiconductor region and having a higher carrier concentration of the second conductivity type than that of the second semiconductor region; and a first electrode provided on the insulating portion and the third semiconductor region, the first electrode having a portion which is aligned with the second semiconductor region in a second direction perpendicular to a first direction being from the first semiconductor region to the second semiconductor region, and the first electrode being in contact with the second semiconductor region and the third semiconductor region.
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公开(公告)号:US20170301800A1
公开(公告)日:2017-10-19
申请号:US15637334
申请日:2017-06-29
发明人: TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-Se Ho
IPC分类号: H01L29/872 , H01L21/02 , H01L21/285 , H01L21/311 , H01L29/06 , H01L29/20 , H01L29/40 , H01L29/66 , H01L21/56 , H01L23/00 , H01L27/08
CPC分类号: H01L29/872 , H01L21/0217 , H01L21/0254 , H01L21/28581 , H01L21/30612 , H01L21/31111 , H01L21/56 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L25/18 , H01L27/0248 , H01L27/0814 , H01L29/0619 , H01L29/0688 , H01L29/2003 , H01L29/402 , H01L29/405 , H01L29/417 , H01L29/66136 , H01L29/66143 , H01L29/66212 , H01L29/861 , H01L29/8611 , H01L2224/0401 , H01L2224/04042 , H01L2224/05016 , H01L2224/05567 , H01L2224/11616 , H01L2224/13017 , H01L2224/13021 , H01L2224/13022 , H01L2924/00014 , H01L2924/1033 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要: A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor layer and dielectric field plates formed on the guard ring. The termination structure is formed at the edge of the anode electrode of the Schottky diode and has the effect of reducing electric field crowding at the anode electrode edge, especially when the Schottky diode is reverse biased. In one embodiment, the P-type epitaxial layer includes a step recess to further enhance the field spreading effect of the termination structure.
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公开(公告)号:US20170271158A1
公开(公告)日:2017-09-21
申请号:US15616382
申请日:2017-06-07
申请人: ABB Schweiz AG
发明人: Renato Minamisawa , Munaf Rahimo
IPC分类号: H01L21/04 , H01L29/16 , H01L29/06 , H01L29/872
CPC分类号: H01L21/0485 , H01L21/048 , H01L21/0495 , H01L29/0619 , H01L29/1608 , H01L29/2003 , H01L29/401 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66212 , H01L29/872
摘要: A method for manufacturing a wide bandgap junction harrier Schottky diode (1) having an anode side (10) and a cathode side (15) is provided, wherein an (n±) doped cathode layer (2) is arranged on the cathode side (15), at least one p doped anode layer (3) is arranged on the anode side (10), an (n−) doped drift layer (4) is arranged between the cathode layer (2) and the at least one anode layer (3), which drift layer (4) extends to the anode side (10), wherein the following manufacturing steps are performed: a) providing an (n+) doped wide bandgap substrate(100), b) creating the drift layer (4) on the cathode layer (2), c) creating the at least one anode layer (3) on the drift layer (4), d) applying a first metal layer (5) on the anode side (10) on top of the drift layer (4) for forming a Schottky contact (55), characterized in, that e) creating a second metal layer (6) on top of at least one anode layer (3), wherein after having created the first and the second metal layer (5, 6), a metal layer on top of the at least one anode layer (3) has a second thickness (64) and a metal layer on top of the drift layer (4) has a first thickness (54), wherein the second thickness (64) is smaller than the first thickness (54), 1) then performing a first heating step (63) at a first temperature, by which due the second thickness (64) being smaller than the first thickness (54) an ohmic contact (65) is formed at the interface between the second metal layer (6) and the at least one anode layer (3), wherein performing the first healing step (63) such that a temperature below the first metal layer (5) is kept below a temperature for forming an ohmic contact.
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公开(公告)号:US20170256657A1
公开(公告)日:2017-09-07
申请号:US15442359
申请日:2017-02-24
发明人: Takaki NIWA , Takahiro FUJII , Masayoshi KOSAKI , Tohru OKA
IPC分类号: H01L29/872 , H01L29/40 , H01L29/06 , H01L29/207 , H01L29/20 , H01L29/868 , H01L29/36
CPC分类号: H01L29/872 , H01L29/0619 , H01L29/0657 , H01L29/1608 , H01L29/2003 , H01L29/207 , H01L29/36 , H01L29/402 , H01L29/407 , H01L29/6606 , H01L29/66212 , H01L29/868
摘要: There is provided an MPS diode comprising a first semiconductor layer that is an N type; P-type semiconductor regions and N-type semiconductor regions that are arranged alternately on one surface of the first semiconductor layer; and a Schottky electrode that is in Schottky junction with the N-type semiconductor regions and is arranged to be adjacent to and in contact with at least part of the P-type semiconductor regions. A donor concentration in an area of the N-type semiconductor region that is adjacent to and in contact with the first semiconductor layer is lower than the donor concentration in an area of the first semiconductor layer that is adjacent to and in contact with the N-type semiconductor region and is lower than the donor concentration in an area of the N-type semiconductor region that is adjacent to and in contact with the Schottky electrode. This configuration improves a breakdown voltage under applying a reverse bias voltage and reduces a rising voltage under applying a forward bias voltage.
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