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公开(公告)号:US20240388286A1
公开(公告)日:2024-11-21
申请号:US18627937
申请日:2024-04-05
Applicant: Masaru HIRAI
Inventor: Masaru HIRAI
Abstract: A semiconductor integrated circuit includes first and second input terminals, first and second output terminals, a first detection circuit configured to assert a first signal in response to detecting a voltage drop at the first input terminal, a second detection circuit configured to assert a second signal in response to detecting an overvoltage of the first input terminal, a third detection circuit configured to assert a third signal in response to detecting a voltage drop at the second input terminal, a first output circuit configured to monitor the first signal and the second signal, and output a first reset signal from the first output terminal in response to asserting the first signal or the second signal, and a second output circuit configured to monitor the third signal, and output a second reset signal from the second output terminal in response to asserting the third signal.
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公开(公告)号:US20240356543A1
公开(公告)日:2024-10-24
申请号:US18332522
申请日:2023-06-09
Applicant: NXP B.V.
Inventor: Henricus Cornelis Johannes Büthker , Jyotirmoy Ghosh , Piotr Gibas , Edwin Schapendonk , Neha Goel , Namith Vishnu N
CPC classification number: H03K17/223 , H03K3/037
Abstract: One example discloses a power on reset (POR) circuit, wherein a first circuit is configured to un-couple a power supply input from a resistor divider when the voltage on a second end of the capacitor is above a first circuit threshold; a second circuit configured to couple the second end of the capacitor to the power supply input when a voltage on at least one tap point of the resistor divider is above a second circuit threshold; wherein the comparator is coupled to at least one of the tap points, the reference potential, and a POR output; and wherein the comparator is configured to ramp-up a POR signal on the POR output when a voltage on the at least one of the tap points is greater than the comparator threshold.
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公开(公告)号:US12086294B2
公开(公告)日:2024-09-10
申请号:US17490178
申请日:2021-09-30
Applicant: SHENZHEN GOODIX TECHNOLOGY CO., LTD.
Inventor: Jiang Yang , Jianfeng Xue
CPC classification number: G06F21/755 , G06F21/554 , G06F21/85 , H03K17/22 , G01R19/0084
Abstract: A voltage attack detection circuit includes: at least one voltage regulation circuit, where the at least one voltage regulation circuit is connected to an external supply respectively, the at least one voltage regulation circuit is configured to convert the external supply to at least one internal supply, and the at least one internal supply is configured to output at least one first voltage respectively; at least one voltage sensor, where the at least one voltage sensor is connected to the at least one internal supply respectively, so as to receive the at least one first voltage respectively, each voltage sensor of the at least one voltage sensor is configured to output a reference voltage based on a received reference voltage and a received first voltage, the reference voltage is configured to indicate whether a received first voltage is within a present voltage range.
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公开(公告)号:US12063036B2
公开(公告)日:2024-08-13
申请号:US18154335
申请日:2023-01-13
Applicant: NXP USA, Inc.
Inventor: Siamak Delshadpour , Ahmad Dashtestani , Mona Ganji
IPC: H03K19/01 , G05F1/46 , H03K3/037 , H03K19/0185 , H03K17/22
CPC classification number: H03K19/018507 , G05F1/46 , H03K3/037 , H03K17/22
Abstract: One example discloses a power application circuit, including: a first power application circuit, configured to receive an enable signal and a first voltage; wherein the first power application circuit is configured to output the first voltage at a first current after a first delay from when the enable signal is received; and a second power application circuit, configured to receive the enable signal and a second voltage; wherein the second power application circuit is configured to output the second voltage at a second current after a second delay from when the enable signal is received.
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公开(公告)号:US20240134406A1
公开(公告)日:2024-04-25
申请号:US18379262
申请日:2023-10-11
Inventor: Julien GOULIER , Nicolas GOUX , Marc JOISSON
CPC classification number: G05F3/262 , G05F1/468 , H03K17/18 , H03K17/22 , H03F3/45179
Abstract: An electronic circuit includes a reference voltage circuit and a circuit for checking the starting operation of the reference voltage circuit. The reference voltage circuit includes a first stack of a first transistor and second transistor receiving first and second control signals, respectively. The start check circuit includes a first elementary test circuit including a second stack of a third transistor and fourth transistor receiving the first and second control signals, respectively. An output of the first elementary test circuit delivers a first binary signal indicative of proper starting operation of the reference voltage circuit.
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公开(公告)号:US20240128976A1
公开(公告)日:2024-04-18
申请号:US18231851
申请日:2023-08-09
Applicant: Shanghai Huali Microelectronics Corporation
Inventor: Yu Jia , Yifei Qian
IPC: H03K19/0185 , H03K17/22 , H03K17/687
CPC classification number: H03K19/018521 , H03K17/223 , H03K17/6872
Abstract: The present application discloses a power-on-reset circuit, which optimizes a hysteresis circuit and a reset signal generation circuit, and introduces a seventh PMOS transistor as a switch transistor to achieve the differentiation of control voltages at a gate end of a first NMOS transistor during powering-on and off. A voltage rise detection point is determined by a partial voltage of a resistor during powering-on, while a voltage fall detection point is directly determined by a power supply voltage during powering-off. Such differentiation may achieve a significant separation between the voltage rise detection point and the voltage fall detection point, reducing the voltage fall detection point to near a threshold voltage of the first NMOS transistor, and meeting the demand for a lower voltage fall detection point, which is consistent with a practical application of the power-on-reset circuit in an MCU.
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公开(公告)号:US11909384B2
公开(公告)日:2024-02-20
申请号:US17741813
申请日:2022-05-11
Applicant: GaN Systems Inc.
Inventor: Di Chen
IPC: H02H3/24 , H03K17/08 , H03K17/22 , H02M1/36 , H03K17/687 , H03K17/0814
CPC classification number: H03K17/223 , H02H3/243 , H02M1/36 , H03K17/08142 , H03K17/687
Abstract: A protected direct-drive depletion-mode (D-mode) GaN semiconductor half-bridge power module is disclosed. Applications include high power inverter applications, such as 100 kW to 200 kW electric vehicle traction inverters, and other motor drives. The high-side switch is a normally-on D-mode GaN semiconductor power switch Q1 in series with a normally-off LV Si MOSFET power switch M1 and the low-side switch is a normally on D-mode GaN semiconductor power switch Q2. The gates of both Q1 and Q2 are directly driven. M1 in series with Q1 provides a high-side switch which is a normally-off device for start-up and fail-safe protection. M1 may also be used for current sensing and overcurrent protection. For example, a control circuit determines an operational mode of M1 responsive to a UVLO signal and a voltage sense signal indicative of an overcurrent event. Examples of single phase and three-phase half-bridge modules and driver circuits are described.
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公开(公告)号:US20230370059A1
公开(公告)日:2023-11-16
申请号:US17741813
申请日:2022-05-11
Applicant: GaN Systems Inc.
Inventor: Di CHEN
IPC: H03K17/22 , H02M1/36 , H02H3/24 , H03K17/0814 , H03K17/687
CPC classification number: H03K17/223 , H02H3/243 , H02M1/36 , H03K17/08142 , H03K17/687
Abstract: A protected direct-drive depletion-mode (D-mode) GaN semiconductor half-bridge power module is disclosed. Applications include high power inverter applications, such as 100kW to 200kW electric vehicle traction inverters, and other motor drives. The high-side switch is a normally-on D-mode GaN semiconductor power switch Q1 in series with a normally-off LV Si MOSFET power switch M1 and the low-side switch is a normally on D-mode GaN semiconductor power switch Q2. The gates of both Q1 and Q2 are directly driven. M1 in series with Q1 provides a high-side switch which is a normally-off device for start-up and fail-safe protection. M1 may also be used for current sensing and overcurrent protection. For example, a control circuit determines an operational mode of M1 responsive to a UVLO signal and a voltage sense signal indicative of an overcurrent event. Examples of single phase and three-phase half-bridge modules and driver circuits are described.
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公开(公告)号:US11742748B1
公开(公告)日:2023-08-29
申请号:US17828106
申请日:2022-05-31
Applicant: Qisda Corporation
Inventor: Meng-Hsien Lin
CPC classification number: H02M1/32 , H02M3/158 , H03K17/223
Abstract: An electronic device including a voltage detection circuit, a control and protection circuit, at least one voltage converter, and a system-on-chip is provided. The voltage detection circuit detects a voltage source to output a voltage detection signal. The control and protection circuit, coupled to the voltage detection circuit, generates a system power enabling signal according to the voltage detection signal. The at least one voltage converter, coupled to the control and protection circuit, generates a system power signal according to the system power enabling signal. The system-on-chip, coupled to the at least one voltage converter, controls the electronic device when receiving the system power signal. In response to a power off signal generated from the system-on-chip, the control and protection circuit further isolates the voltage detection signal to avoid the transition of the voltage detection signal affecting a system shutdown procedure of the electronic device.
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公开(公告)号:US11705902B2
公开(公告)日:2023-07-18
申请号:US17400542
申请日:2021-08-12
Applicant: NUVOTON TECHNOLOGY CORPORATION
Inventor: Ming-Hsin Huang
IPC: H03K17/22 , H03K17/687 , H03K17/14
CPC classification number: H03K17/223 , H03K17/145 , H03K17/6872
Abstract: A supply voltage detecting circuit has a voltage detection circuit and a current clamping circuit. The voltage detection circuit receives and detects a supply voltage and is used to detect to generate a low-voltage detection signal. When the supply voltage is lower than a set level, the low voltage detection signal output by the voltage detection circuit turns off the current clamping circuit, and a transistor current flowing through the voltage detection circuit is proportional to the supply voltage; and when the supply voltage is higher than or equal to the set level, the low voltage detection signal output by the voltage detection circuit turns on the current clamping circuit, and the current clamping circuit provides a constant current to maintain the operation of the voltage detection circuit, wherein the transistor current flowing through the voltage detection circuit is proportional to the constant current.
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