SEMICONDUCTOR INTEGRATED CIRCUIT AND ELECTRONIC APPARATUS

    公开(公告)号:US20240388286A1

    公开(公告)日:2024-11-21

    申请号:US18627937

    申请日:2024-04-05

    Applicant: Masaru HIRAI

    Inventor: Masaru HIRAI

    Abstract: A semiconductor integrated circuit includes first and second input terminals, first and second output terminals, a first detection circuit configured to assert a first signal in response to detecting a voltage drop at the first input terminal, a second detection circuit configured to assert a second signal in response to detecting an overvoltage of the first input terminal, a third detection circuit configured to assert a third signal in response to detecting a voltage drop at the second input terminal, a first output circuit configured to monitor the first signal and the second signal, and output a first reset signal from the first output terminal in response to asserting the first signal or the second signal, and a second output circuit configured to monitor the third signal, and output a second reset signal from the second output terminal in response to asserting the third signal.

    POWER ON RESET (POR) CIRCUIT
    2.
    发明公开

    公开(公告)号:US20240356543A1

    公开(公告)日:2024-10-24

    申请号:US18332522

    申请日:2023-06-09

    Applicant: NXP B.V.

    CPC classification number: H03K17/223 H03K3/037

    Abstract: One example discloses a power on reset (POR) circuit, wherein a first circuit is configured to un-couple a power supply input from a resistor divider when the voltage on a second end of the capacitor is above a first circuit threshold; a second circuit configured to couple the second end of the capacitor to the power supply input when a voltage on at least one tap point of the resistor divider is above a second circuit threshold; wherein the comparator is coupled to at least one of the tap points, the reference potential, and a POR output; and wherein the comparator is configured to ramp-up a POR signal on the POR output when a voltage on the at least one of the tap points is greater than the comparator threshold.

    Voltage attack detection circuit and chip

    公开(公告)号:US12086294B2

    公开(公告)日:2024-09-10

    申请号:US17490178

    申请日:2021-09-30

    Abstract: A voltage attack detection circuit includes: at least one voltage regulation circuit, where the at least one voltage regulation circuit is connected to an external supply respectively, the at least one voltage regulation circuit is configured to convert the external supply to at least one internal supply, and the at least one internal supply is configured to output at least one first voltage respectively; at least one voltage sensor, where the at least one voltage sensor is connected to the at least one internal supply respectively, so as to receive the at least one first voltage respectively, each voltage sensor of the at least one voltage sensor is configured to output a reference voltage based on a received reference voltage and a received first voltage, the reference voltage is configured to indicate whether a received first voltage is within a present voltage range.

    Power application circuit
    4.
    发明授权

    公开(公告)号:US12063036B2

    公开(公告)日:2024-08-13

    申请号:US18154335

    申请日:2023-01-13

    Applicant: NXP USA, Inc.

    CPC classification number: H03K19/018507 G05F1/46 H03K3/037 H03K17/22

    Abstract: One example discloses a power application circuit, including: a first power application circuit, configured to receive an enable signal and a first voltage; wherein the first power application circuit is configured to output the first voltage at a first current after a first delay from when the enable signal is received; and a second power application circuit, configured to receive the enable signal and a second voltage; wherein the second power application circuit is configured to output the second voltage at a second current after a second delay from when the enable signal is received.

    Power-On-Reset Circuit
    6.
    发明公开

    公开(公告)号:US20240128976A1

    公开(公告)日:2024-04-18

    申请号:US18231851

    申请日:2023-08-09

    Inventor: Yu Jia Yifei Qian

    CPC classification number: H03K19/018521 H03K17/223 H03K17/6872

    Abstract: The present application discloses a power-on-reset circuit, which optimizes a hysteresis circuit and a reset signal generation circuit, and introduces a seventh PMOS transistor as a switch transistor to achieve the differentiation of control voltages at a gate end of a first NMOS transistor during powering-on and off. A voltage rise detection point is determined by a partial voltage of a resistor during powering-on, while a voltage fall detection point is directly determined by a power supply voltage during powering-off. Such differentiation may achieve a significant separation between the voltage rise detection point and the voltage fall detection point, reducing the voltage fall detection point to near a threshold voltage of the first NMOS transistor, and meeting the demand for a lower voltage fall detection point, which is consistent with a practical application of the power-on-reset circuit in an MCU.

    Direct-drive D-mode GaN half-bridge power module

    公开(公告)号:US11909384B2

    公开(公告)日:2024-02-20

    申请号:US17741813

    申请日:2022-05-11

    Inventor: Di Chen

    Abstract: A protected direct-drive depletion-mode (D-mode) GaN semiconductor half-bridge power module is disclosed. Applications include high power inverter applications, such as 100 kW to 200 kW electric vehicle traction inverters, and other motor drives. The high-side switch is a normally-on D-mode GaN semiconductor power switch Q1 in series with a normally-off LV Si MOSFET power switch M1 and the low-side switch is a normally on D-mode GaN semiconductor power switch Q2. The gates of both Q1 and Q2 are directly driven. M1 in series with Q1 provides a high-side switch which is a normally-off device for start-up and fail-safe protection. M1 may also be used for current sensing and overcurrent protection. For example, a control circuit determines an operational mode of M1 responsive to a UVLO signal and a voltage sense signal indicative of an overcurrent event. Examples of single phase and three-phase half-bridge modules and driver circuits are described.

    DIRECT-DRIVE D-MODE GaN HALF-BRIDGE POWER MODULE

    公开(公告)号:US20230370059A1

    公开(公告)日:2023-11-16

    申请号:US17741813

    申请日:2022-05-11

    Inventor: Di CHEN

    Abstract: A protected direct-drive depletion-mode (D-mode) GaN semiconductor half-bridge power module is disclosed. Applications include high power inverter applications, such as 100kW to 200kW electric vehicle traction inverters, and other motor drives. The high-side switch is a normally-on D-mode GaN semiconductor power switch Q1 in series with a normally-off LV Si MOSFET power switch M1 and the low-side switch is a normally on D-mode GaN semiconductor power switch Q2. The gates of both Q1 and Q2 are directly driven. M1 in series with Q1 provides a high-side switch which is a normally-off device for start-up and fail-safe protection. M1 may also be used for current sensing and overcurrent protection. For example, a control circuit determines an operational mode of M1 responsive to a UVLO signal and a voltage sense signal indicative of an overcurrent event. Examples of single phase and three-phase half-bridge modules and driver circuits are described.

    Electronic device and protection method thereof

    公开(公告)号:US11742748B1

    公开(公告)日:2023-08-29

    申请号:US17828106

    申请日:2022-05-31

    Inventor: Meng-Hsien Lin

    CPC classification number: H02M1/32 H02M3/158 H03K17/223

    Abstract: An electronic device including a voltage detection circuit, a control and protection circuit, at least one voltage converter, and a system-on-chip is provided. The voltage detection circuit detects a voltage source to output a voltage detection signal. The control and protection circuit, coupled to the voltage detection circuit, generates a system power enabling signal according to the voltage detection signal. The at least one voltage converter, coupled to the control and protection circuit, generates a system power signal according to the system power enabling signal. The system-on-chip, coupled to the at least one voltage converter, controls the electronic device when receiving the system power signal. In response to a power off signal generated from the system-on-chip, the control and protection circuit further isolates the voltage detection signal to avoid the transition of the voltage detection signal affecting a system shutdown procedure of the electronic device.

    Supply voltage detecting circuit and circuit system using the same

    公开(公告)号:US11705902B2

    公开(公告)日:2023-07-18

    申请号:US17400542

    申请日:2021-08-12

    Inventor: Ming-Hsin Huang

    CPC classification number: H03K17/223 H03K17/145 H03K17/6872

    Abstract: A supply voltage detecting circuit has a voltage detection circuit and a current clamping circuit. The voltage detection circuit receives and detects a supply voltage and is used to detect to generate a low-voltage detection signal. When the supply voltage is lower than a set level, the low voltage detection signal output by the voltage detection circuit turns off the current clamping circuit, and a transistor current flowing through the voltage detection circuit is proportional to the supply voltage; and when the supply voltage is higher than or equal to the set level, the low voltage detection signal output by the voltage detection circuit turns on the current clamping circuit, and the current clamping circuit provides a constant current to maintain the operation of the voltage detection circuit, wherein the transistor current flowing through the voltage detection circuit is proportional to the constant current.

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