SIGNAL TRANSMISSION DEVICE, ELECTRONIC DEVICE AND VEHICLE

    公开(公告)号:US20240322816A1

    公开(公告)日:2024-09-26

    申请号:US18673151

    申请日:2024-05-23

    Applicant: Rohm Co., Ltd.

    CPC classification number: H03K17/18 H02P29/0241

    Abstract: A signal transmission device that transmits a driving signal for a power transistor from a primary circuit system to a secondary circuit system while isolating between the primary and secondary circuit systems includes: a first fault detection circuit configured to detect a fault in the primary circuit system; a second fault detection circuit configured to detect a fault in the secondary circuit system; a first signal transmission path configured to transmit the result of detection by the second fault detection circuit from the secondary circuit system to the primary circuit system while isolating between the primary and secondary circuit systems; and a self-test circuit configured to perform a self-test on each of the first fault detection circuit, the second fault detection circuit, and the first signal transmission path.

    Method and system for short to ground protection for a circuit including a FET device

    公开(公告)号:US12081203B2

    公开(公告)日:2024-09-03

    申请号:US17440898

    申请日:2020-03-23

    CPC classification number: H03K17/0822 H03K17/18 H03K2217/0027

    Abstract: A diagnostic circuit for an electronic control unit comprises a field-effect transistor device, a comparator circuit, and a microprocessor. The diagnostic circuit detects a short to ground detection and turns off the field-effect transistor device. The diagnostic circuit may include redundant or dual short to ground protection for a field-effect transistor device. The comparator circuit generates an interrupt signal based on comparing a sensed parameter of an output signal of the field-effect transistor device to a threshold value. The microprocessor samples output from the field-effect transistor device and compares the sampled output to a power limit threshold. The microprocessor turns off the field-effect transistor device based on receiving the interrupt signal or comparison of the sampled output to the power limit threshold. Detection or prevention of a short to ground protects the field-effect transistor device.

    Drive device for voltage-controlled semiconductor element

    公开(公告)号:US12047060B2

    公开(公告)日:2024-07-23

    申请号:US17994131

    申请日:2022-11-25

    Inventor: Hiroaki Ichikawa

    Abstract: A drive device for driving a voltage-controlled semiconductor element. The drive device includes: a drive circuit connected to the gate of the semiconductor element via a gate resistor; a delay circuit connected to the drive circuit, for delaying a drive signal output from the drive circuit until a gate voltage of the semiconductor element enters a Miller effect period, which is a period during which the gate voltage transitionally changes, the gate voltage having temperature dependency on a chip temperature of the semiconductor element; a one-shot circuit connected to the delay circuit, for outputting a pulse signal with a pulse width shorter than the Miller effect period; a comparator that compares the gate voltage with a reference voltage; and an AND circuit that outputs an overheat detection signal in response to the gate voltage exceeding the reference voltage.

    Method for checking a semiconductor switch for a fault

    公开(公告)号:US11881848B2

    公开(公告)日:2024-01-23

    申请号:US17435583

    申请日:2020-02-27

    Applicant: Webasto SE

    Inventor: Philipp Eck

    Abstract: The invention provides a method for checking a semiconductor switch for a fault, wherein the semiconductor switch is driven with a PWM signal with a variable duty cycle. To the benefit of determining faults on the semiconductor switch reliably and cost-effectively, it is provided that if the semiconductor switch is operated with a duty cycle of 100% or 0%, the current measurement of the overall system is evaluated, while if the semiconductor switch is operated with a duty cycle of between 0% and 100%, the generated voltage pulses across the semiconductor switch are evaluated.

    Transistor device
    9.
    发明授权

    公开(公告)号:US11664718B2

    公开(公告)日:2023-05-30

    申请号:US16969111

    申请日:2019-02-12

    Inventor: David Summerland

    Abstract: A transistor device includes a transistor and programmable controller. The controller has an output that controls operation of the transistor. The controller includes analog computing circuitry and optionally digital computing circuitry that may be used to setup the analog computing circuitry. In addition to two connectors for connecting the transistor into an external circuit, the device includes a further connector that provides an input to the controller and through which the control can be programmed post manufacture. The transistor device may be a discrete component in which transistor and controlling circuitry are held in packaging, the three connectors exposed through the packaging in order to connect the device to an external circuit.

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