HIGH FREQUENCY SEMICONDUCTOR DEVICE AND PACKAGE THEREFOR

    公开(公告)号:US20170373017A1

    公开(公告)日:2017-12-28

    申请号:US15407566

    申请日:2017-01-17

    摘要: A high frequency semiconductor device package includes a metal plate, a frame body, a first lead part, a second lead part, a first conductive layer, and a second conductive layer. The frame body includes a first frame part made and a second frame part. The first frame part has a lower surface bonded to the metal plate. The first frame part has an upper surface including a first region and a second region. The first lead part protrudes outward along a line passing through a central part of the first region and a central part of the second region in plan view. The second lead part protrudes outward along the line in plan view. The first conductive layer includes a first stripe part and a first connection part. The second conductive layer includes a second stripe part and a second connection part.