公开(公告)号：US11855066B2

公开(公告)日：2023-12-26

申请号：US17743455

申请日：2022-05-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Hsiang-Tai Lu ,  Shuo-Mao Chen ,  Mill-Jer Wang ,  Feng-Cheng Hsu ,  Chao-Hsiang Yang ,  Shin-Puu Jeng ,  Cheng-Yi Hong ,  Chih-Hsien Lin ,  Dai-Jang Chen ,  Chen-Hua Lin

IPC分类号： H01L25/00 ,  H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L21/66 ,  H01L23/498 ,  H01L23/522 ,  H01L23/053

CPC分类号： H01L25/50 ,  H01L21/486 ,  H01L21/4853 ,  H01L21/565 ,  H01L22/20 ,  H01L22/32 ,  H01L23/3135 ,  H01L23/3185 ,  H01L23/5386 ,  H01L24/19 ,  H01L24/20 ,  H01L25/105 ,  H01L21/4857 ,  H01L21/563 ,  H01L22/14 ,  H01L23/053 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/23 ,  H01L24/24 ,  H01L2224/02379 ,  H01L2224/16225 ,  H01L2224/214 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/3511 ,  Y02P80/30 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.

公开(公告)号：US11837526B2

公开(公告)日：2023-12-05

申请号：US16450657

申请日：2019-06-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yang-Che Chen ,  Chen-Hua Lin ,  Huang-Wen Tseng ,  Victor Chiang Liang ,  Chwen-Ming Liu

IPC分类号： H01L23/48 ,  H01L27/06 ,  H01L25/065 ,  H01L21/768 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L23/481 ,  H01L21/566 ,  H01L21/76816 ,  H01L23/3157 ,  H01L25/0657 ,  H01L27/06

摘要： A semiconductor structure includes a molding compound having a first surface and a second surface opposite to the first surface, a passive device component disposed in the molding compound, a via penetrating the molding compound from the first surface to the second surface, a first connection structure disposed over the first surface of the molding compound and electrically coupled to the passive device component, and a second connection structure disposed over the second surface of the molding compound. The first connection structure and the second connection structure are electrically coupled to each other by the via.

公开(公告)号：US08970023B2

公开(公告)日：2015-03-03

申请号：US13758665

申请日：2013-02-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Bruce C. S. Chou ,  Chih-Hsien Lin ,  Hsiang-Tai Lu ,  Jung-Kuo Tu ,  Tung-Hung Hsieh ,  Chen-Hua Lin ,  Mingo Liu

IPC分类号： H01L23/02 ,  H01L23/48 ,  H01L23/00

CPC分类号： H01L21/56 ,  H01L21/486 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/3135 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/2101 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81193 ,  H01L2224/81424 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81895 ,  H01L2224/82101 ,  H01L2224/83104 ,  H01L2224/85 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/1531 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01074 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2224/45099

摘要： A semiconductor device includes a first die having a first active surface and a first backside surface opposite the first active surface, a second die having a second active surface and a second backside surface opposite the second active surface, and an interposer, the first active surface of the first die being electrically coupled to a first side of the interposer, the second active surface of the second die being electrically coupled to a second side of the interposer. The semiconductor device also includes a first connector over the interposer, a first encapsulating material surrounding the second die, the first encapsulating material having a first surface over the interposer, and a via electrically coupling the first connector and the interposer. A first end of the via is substantially coplanar with the first surface of the first encapsulating material.

摘要翻译： 半导体器件包括具有第一有源表面和与第一有源表面相对的第一背面的第一管芯，具有第二有源表面和与第二有源表面相对的第二背面的第二管芯，以及插入件，第一有源表面 所述第一管芯电耦合到所述插入件的第一侧，所述第二管芯的所述第二有源表面电连接到所述插入件的第二侧。 半导体器件还包括位于插入器上的第一连接器，围绕第二管芯的第一封装材料，第一封装材料具有位于插入件上的第一表面，以及电连接第一连接器和插入件的通孔。 通孔的第一端与第一封装材料的第一表面基本共面。

公开(公告)号：US12027433B2

公开(公告)日：2024-07-02

申请号：US17885401

申请日：2022-08-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yang-Che Chen ,  Chen-Hua Lin ,  Huang-Wen Tseng ,  Victor Chiang Liang ,  Chwen-Ming Liu

IPC分类号： H01L21/52 ,  H01L23/00 ,  H01L23/04 ,  H01L23/06 ,  H01L23/14 ,  H01L23/498 ,  H01L21/60

CPC分类号： H01L23/04 ,  H01L21/52 ,  H01L23/06 ,  H01L23/14 ,  H01L23/49816 ,  H01L24/14 ,  H01L2021/60022

摘要： A semiconductor package includes a semiconductor chip disposed over a first main surface of a first substrate, a package lid disposed over the semiconductor chip, and spacers extending from the package lid through corresponding holes in the first substrate. The spacers enter the holes at a first main surface of the first substrate and extend beyond an opposing second main surface of the first substrate.

公开(公告)号：US10937858B2

公开(公告)日：2021-03-02

申请号：US16852749

申请日：2020-04-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yang-Che Chen ,  Chen-Hua Lin ,  Huang-Wen Tseng ,  Victor Chiang Liang ,  Chwen-Ming Liu

IPC分类号： H01L49/02 ,  H01L27/06

摘要： A method of manufacturing a semiconductor structure is provided. The method includes: providing a substrate including an electrical component; forming a capacitor structure in the substrate, proximal to a heterogeneous interface of the substrate, and physically and electrically isolated from the electrical component; forming a conductive terminal over and electrically connected with the capacitor structure; and contacting the conductive terminal with a probe to measure an electrical parameter of the capacitor structure, wherein the electrical parameter corresponds to a humidity permeability at the heterogeneous interface. A semiconductor structure thereof is also provided.

公开(公告)号：US20170133282A1

公开(公告)日：2017-05-11

申请号：US15414909

申请日：2017-01-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Cheng Wu ,  Li-Han Hsu ,  Sao-Ling Chiu ,  Shang-Yun Hou ,  Shin-Puu Jeng ,  Chen-Hua Lin

IPC分类号： H01L21/66 ,  G01R1/073 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  G01R31/28 ,  G01R31/265

CPC分类号： H01L22/14 ,  G01R1/07314 ,  G01R31/265 ,  G01R31/2884 ,  H01L22/12 ,  H01L22/32 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16055 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/1713 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06596

摘要： An embodiment method includes providing a standardized testing structure design for a chip-on-wafer (CoW) structure, wherein the standardized testing structure design comprises placing a testing structure in a pre-selected area a top die in the CoW structure, and electrically testing a plurality of microbumps in the CoW structure by applying a universal testing probe card to the testing structure.

公开(公告)号：US20140266283A1

公开(公告)日：2014-09-18

申请号：US13905958

申请日：2013-05-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Cheng Wu ,  Li-Han Hsu ,  Sao-Ling Chiu ,  Shang-Yun Hou ,  Shin-Puu Jeng ,  Chen-Hua Lin

IPC分类号： G01R31/26

CPC分类号： H01L22/14 ,  G01R1/07314 ,  G01R31/265 ,  G01R31/2884 ,  H01L22/12 ,  H01L22/32 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16055 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/1713 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06596

摘要： An embodiment method includes providing a standardized testing structure design for a chip-on-wafer (CoW) structure, wherein the standardized testing structure design comprises placing a testing structure in a pre-selected area a top die in the CoW structure, and electrically testing a plurality of microbumps in the CoW structure by applying a universal testing probe card to the testing structure.

摘要翻译： 一种实施方式包括提供晶片芯片（CoW）结构的标准化测试结构设计，其中标准化测试结构设计包括将测试结构放置在CoW结构中的顶部模具的预选区域内，并且电测试 通过在测试结构上应用通用测试探针卡，在CoW结构中的多个微胶片。

公开(公告)号：US11854913B2

公开(公告)日：2023-12-26

申请号：US17397416

申请日：2021-08-09

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yang-Che Chen ,  Wei-Yu Chou ,  Hong-Seng Shue ,  Chen-Hua Lin ,  Huang-Wen Tseng ,  Victor Chiang Liang ,  Chwen-Ming Liu

IPC分类号： H01L21/66 ,  H01L23/58 ,  H01L21/56 ,  H01L23/00 ,  H01L21/78 ,  G01R31/26 ,  H01L21/82

CPC分类号： H01L22/32 ,  G01R31/2644 ,  H01L21/565 ,  H01L21/78 ,  H01L21/82 ,  H01L22/12 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L24/13 ,  H01L2224/13024

摘要： A method for detecting defects in a semiconductor device including singulating a die having a substrate including a circuit region and an outer border, a plurality of detecting devices disposed over the substrate and located between the circuit region and the outer border, a first probe pad and a second probe pad electrically connected to two ends of each detecting device, and a seal ring located between the outer border of the die and the detecting devices. The method further includes probing the first probe pad and the second probe pad to determine a connection status of the detecting device, and recognizing a defect when the connection status of the detecting device indicates an open circuit.

公开(公告)号：US11804433B2

公开(公告)日：2023-10-31

申请号：US17351236

申请日：2021-06-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yang-Che Chen ,  Chen-Hua Lin ,  Victor Chiang Liang ,  Huang-Wen Tseng ,  Chwen-Ming Liu

IPC分类号： H01L23/528 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/522

CPC分类号： H01L23/528 ,  H01L21/486 ,  H01L21/56 ,  H01L23/31 ,  H01L23/5226

摘要： A semiconductor package structure and method of manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a connection layer formed on a metal base layer, at least one die unit formed on the connection layer, a metal pillar connecting the metal base layer and surrounding the die unit, and an interconnect structure overlaid onto the die unit and the metal pillar. Each die unit comprises at least one die attached onto the connection layer and surrounded by a molding structure. The interconnect structure includes a first interconnect layer overlaid onto the die unit and the metal pillar and a second interconnect layer formed on the first interconnect layer. The first and second interconnect layers comprise first and second metal layers being parallel with the top surface of the die unit. A projection of the metal layers overlaps an upper surface of the die.

公开(公告)号：US11721597B2

公开(公告)日：2023-08-08

申请号：US17461479

申请日：2021-08-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yang-Che Chen ,  Chen-Hua Lin ,  Victor Chiang Liang ,  Huang-Wen Tseng ,  Chwen-Ming Liu

IPC分类号： H01L21/66 ,  H01L23/40 ,  H01L23/58 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L22/32 ,  H01L22/14 ,  H01L23/4006 ,  H01L23/585 ,  H01L24/20 ,  H01L24/13 ,  H01L25/0655 ,  H01L2224/13024 ,  H01L2224/221 ,  H01L2224/2205

摘要： A semiconductor device and a method for detecting a defect in a semiconductor device are provided. The semiconductor device includes a packaging structure. The packaging structure includes a redistribution layer and a detecting component disposed in the redistribution layer. The semiconductor device further includes a cooling plate over the packaging structure and a fixing component penetrating through the packaging structure and the cooling plate. The packaging structure and the cooling plate are fixed by the fixing component. The detecting component is in a chain configuration having a ring shaped structure circling around the fixing component.