公开(公告)号：US20200211907A1

公开(公告)日：2020-07-02

申请号：US16810937

申请日：2020-03-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Min-Chul Sun ,  Myeong-Cheol KIM ,  Kyoung-Sub SHIN

IPC分类号： H01L21/8238 ,  G06F7/505 ,  H01L23/535 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L27/092 ,  H01L21/308 ,  H01L21/306 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/417 ,  G06F30/398 ,  G06F30/39

摘要： In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.

公开(公告)号：US20220208616A1

公开(公告)日：2022-06-30

申请号：US17698487

申请日：2022-03-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Min-Chul SUN ,  Myeong-Cheol KIM ,  Kyoung-Sub SHIN

IPC分类号： H01L21/8238 ,  H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L27/092 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L23/535 ,  G06F7/505 ,  H01L29/417 ,  H01L21/8234 ,  H01L27/088 ,  G06F30/39 ,  G06F30/398

摘要： In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.

公开(公告)号：US20190027411A1

公开(公告)日：2019-01-24

申请号：US16144232

申请日：2018-09-27

申请人： Samsung Electronics Co., Ltd.

发明人： Min-Chul SUN ,  Myeong-Cheol KIM ,  Kyoung-Sub SHIN

IPC分类号： H01L21/8238 ,  H01L29/66 ,  G06F7/505 ,  H01L29/08 ,  H01L29/06 ,  H01L27/092 ,  H01L23/535 ,  H01L21/308 ,  H01L21/306 ,  H01L29/10 ,  G06F17/50

摘要： In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.

公开(公告)号：US20130143372A1

公开(公告)日：2013-06-06

申请号：US13674386

申请日：2012-11-12

申请人： Samsung Electronics Co., Ltd

发明人： Myeong-Cheol KIM ,  Il-Sup Kim ,  Cheol Kim ,  Jong-Chan Shin ,  Jong-Wook Lee ,  Choong-Ho Lee ,  Si-Young Choi ,  Jong-Seo Hong

IPC分类号： H01L21/308

CPC分类号： H01L27/0886 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/16

摘要： Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask.

公开(公告)号：US20240047275A1

公开(公告)日：2024-02-08

申请号：US18491470

申请日：2023-10-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Min-Chul SUN ,  Myeong-Cheol KIM ,  Kyoung-Sub SHIN

IPC分类号： H01L21/8238 ,  H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L27/092 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L23/535 ,  G06F7/505 ,  H01L29/417 ,  H01L21/8234 ,  H01L27/088 ,  G06F30/39 ,  G06F30/398

CPC分类号： H01L21/823807 ,  H01L21/823821 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/823871 ,  H01L29/66545 ,  H01L21/30608 ,  H01L21/308 ,  H01L27/0924 ,  H01L29/1037 ,  H01L29/0847 ,  H01L29/0653 ,  H01L23/535 ,  G06F7/505 ,  H01L29/41791 ,  H01L21/823431 ,  H01L27/0886 ,  H01L21/823412 ,  H01L21/823418 ,  G06F30/39 ,  G06F30/398 ,  H01L29/66795 ,  G06F2119/12

摘要： In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.

公开(公告)号：US20150137261A1

公开(公告)日：2015-05-21

申请号：US14602716

申请日：2015-01-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jin-Wook LEE ,  Myeong-Cheol KIM ,  Sang-Min LEE ,  Young-Ju PARK ,  Hyung-Yong KIM ,  Myung-Hoon JUNG

IPC分类号： H01L29/78 ,  H01L27/11

CPC分类号： H01L29/7848 ,  H01L21/26506 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/11 ,  H01L29/66636 ,  H01L29/78

摘要： A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.

摘要翻译： 半导体器件的制造方法包括提供具有第一区域和第二区域的衬底，在衬底的第一区域中形成多个第一栅极，使得第一栅极以第一间距相互间隔开， 在所述衬底的所述第二区域中形成多个第二栅极，使得所述第二栅极以不同于所述第一间距的第二间距彼此间隔开，将蚀刻速率调节掺杂剂注入所述第二区域以形成注入区域， 同时阻挡第一区域，通过蚀刻多个第一栅极之间的第一区域形成第一沟槽，并且通过蚀刻多个第二栅极之间的第二区域形成第二沟槽。

公开(公告)号：US20180254219A1

公开(公告)日：2018-09-06

申请号：US15658964

申请日：2017-07-25

申请人： Samsung Electronics Co., Ltd.

发明人： Min-Chul SUN ,  Myeong-Cheol KIM ,  Kyoung-Sub SHIN

IPC分类号： H01L21/8238 ,  H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L27/092 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L23/535 ,  G06F7/505

CPC分类号： H01L21/823807 ,  G06F7/505 ,  G06F17/5081 ,  G06F2217/84 ,  H01L21/30608 ,  H01L21/308 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/535 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/66545

摘要： In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.

公开(公告)号：US20160247925A1

公开(公告)日：2016-08-25

申请号：US15144662

申请日：2016-05-02

申请人： Samsung Electronics Co., Ltd.

发明人： Byoung-Ho KWON ,  Cheol KIM ,  Ho-Young KIM ,  Se-Jung PARK ,  Myeong-Cheol KIM ,  Bo-Kyeong KANG ,  Bo-Un YOON ,  Jae-Kwang CHOI ,  Si-Young CHOI ,  Suk-Hoon JEONG ,  Geum-Jung SEONG ,  Hee-Don JEONG ,  Yong-Joon CHOI ,  Ji-Eun HAN

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L21/308 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/306 ,  H01L27/088 ,  H01L29/66

CPC分类号： H01L29/7853 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

公开(公告)号：US20160064380A1

公开(公告)日：2016-03-03

申请号：US14934119

申请日：2015-11-05

申请人： Samsung Electronics Co., Ltd.

发明人： Byoung-Ho KWON ,  Cheol KIM ,  Ho-Young KIM ,  Se-Jung PARK ,  Myeong-Cheol KIM ,  Bo-Kyeong KANG ,  Bo-Un YOON ,  Jae-Kwang CHOI ,  Si-Young CHOI ,  Suk-Hoon JEONG ,  Geum-Jung SEONG ,  Hee-Don JEONG ,  Yong-Joon CHOI ,  Ji-Eun HAN

IPC分类号： H01L27/088 ,  H01L29/66

CPC分类号： H01L29/7853 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

公开(公告)号：US20150140810A1

公开(公告)日：2015-05-21

申请号：US14497501

申请日：2014-09-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sang-Hyun LEE ,  Myeong-Cheol KIM ,  Yoo-Jung LEE ,  IL-Sup KIM ,  Seung-Ju PARK

IPC分类号： H01L21/768 ,  H01L21/311

CPC分类号： H01L21/76802 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76895

摘要： A method of manufacturing a wiring includes sequentially forming a first insulation layer, a first layer, and a second layer on a substrate, etching an upper portion of the second layer a plurality of times to form a second layer pattern including a first recess having a shape of a staircase, etching a portion of the second layer pattern and a portion of the first layer under the first recess to form a first layer pattern including a second recess having a shape of a staircase similar to the first recess, etching a portion of the first layer pattern under the second recess to form a first opening exposing a portion of a top surface of the first insulation layer, etching the exposed portion of the first insulation layer to form a second opening through the first insulation layer, and forming a wiring filling the second opening.

摘要翻译： 一种制造布线的方法包括：在基板上依次形成第一绝缘层，第一层和第二层，多次蚀刻第二层的上部以形成第二层图案，该第二层图案包括具有第 形成阶梯，蚀刻第二层图案的一部分和在第一凹部下方的第一层的一部分，以形成第一层图案，该第一层图案包括具有类似于第一凹部的阶梯形状的第二凹部，蚀刻部分 在第二凹部下方的第一层图案，以形成暴露第一绝缘层的顶表面的一部分的第一开口，蚀刻第一绝缘层的暴露部分以形成穿过第一绝缘层的第二开口，以及形成布线 填补第二个开口。