- 专利标题： METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS
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申请号： US18491470申请日： 2023-10-20
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公开(公告)号： US20240047275A1公开(公告)日： 2024-02-08
- 发明人: Min-Chul SUN , Myeong-Cheol KIM , Kyoung-Sub SHIN
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR 20170028130 2017.03.06
- 分案原申请号： US16810937 2020.03.06
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/66 ; H01L21/306 ; H01L21/308 ; H01L27/092 ; H01L29/10 ; H01L29/08 ; H01L29/06 ; H01L23/535 ; G06F7/505 ; H01L29/417 ; H01L21/8234 ; H01L27/088 ; G06F30/39 ; G06F30/398
摘要：
In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.
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