公开(公告)号：US09276199B2

公开(公告)日：2016-03-01

申请号：US14499027

申请日：2014-09-26

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Rongtian Zhang ,  Vidhya Ramachandran ,  Dong Wook Kim

IPC: H01L23/552 ,  H01L43/12 ,  H01L43/02 ,  H01L23/64 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L23/3121 ,  H01L23/552 ,  H01L23/645 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2924/0002 ,  H01L2924/1435 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Some implementations provide a die that includes a magnetoresistive random access memory (MRAM) cell array that includes several MRAM cells. The die also includes a first ferromagnetic layer positioned above the MRAM cell array, a second ferromagnetic layer positioned below the MRAM cell array, and several vias positioned around at least one MRAM cell. The via comprising a ferromagnetic material. In some implementations, the first ferromagnetic layer, the second ferromagnetic layer and the several vias define a magnetic shield for the MRAM cell array. The MRAM cell may include a magnetic tunnel junction (MTJ). In some implementations, the several vias traverse at least a metal layer and a dielectric layer of the die. In some implementations, the vias are through substrate vias. In some implementations, the ferromagnetic material has high permeability and high B saturation.

公开(公告)号：US09269610B2

公开(公告)日：2016-02-23

申请号：US14253798

申请日：2014-04-15

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Chin-Kwan Kim ,  Dong Wook Kim ,  Jae Sik Lee ,  Kyu-Pyung Hwang ,  Young Kyu Song

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/498 ,  H01L21/48 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/768 ,  H01L21/4857 ,  H01L21/76802 ,  H01L21/76838 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/49822 ,  H01L23/5283 ,  H01L23/5329 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/014

Abstract: An integrated circuit (IC) substrate that includes a second patterned metal layer formed in between a first patterned metal layer is disclosed. A dielectric layer formed on the first patterned metal layer separates the two metal layers. A non-conductive layer is formed on the dielectric layer and the second patterned metal layer.

Abstract translation: 公开了一种集成电路（IC）基板，其包括形成在第一图案化金属层之间的第二图案化金属层。 形成在第一图案化金属层上的电介质层分离两个金属层。 在介电层和第二图案化金属层上形成非导电层。

公开(公告)号：US20150340425A1

公开(公告)日：2015-11-26

申请号：US14283980

申请日：2014-05-21

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Kyu-Pyung Hwang ,  Young Kyu Song ,  Dong Wook Kim

IPC: H01L49/02 ,  H05K1/18 ,  H05K3/46 ,  H01L23/498

CPC classification number: H01L28/40 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2924/15311 ,  H05K1/185 ,  H05K3/4602 ,  H01L2924/014

Abstract: A package substrate is provided that includes a core substrate and a capacitor embedded in the core substrate including a first side. The capacitor includes a first electrode and a second electrode disposed at opposite ends of the capacitor. The package also includes a first power supply metal plate extending laterally in the core substrate. The first power supply metal plate is disposed directly on the first electrode of the capacitor from the first side of the core substrate. A first via extending perpendicular to the first metal plate and connected to the first power supply metal plate from the first side of the core substrate.

Abstract translation: 提供一种封装基板，其包括芯基板和嵌入在包括第一侧的芯基板中的电容器。 电容器包括设置在电容器的相对端的第一电极和第二电极。 封装还包括在芯基板中横向延伸的第一电源金属板。 第一电源金属板从芯基板的第一侧直接设置在电容器的第一电极上。 第一通孔，其垂直于第一金属板延伸并从芯基板的第一侧连接到第一电源金属板。

公开(公告)号：US20150325509A1

公开(公告)日：2015-11-12

申请号：US14273882

申请日：2014-05-09

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Dong Wook Kim ,  Jae Sik Lee ,  Shiqun Gu ,  Ratibor Radojcic

IPC: H01L23/498 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H05K1/11 ,  H01L23/522 ,  H01L23/528 ,  H01L21/311 ,  H05K1/09 ,  H01L21/78 ,  H01L25/065

CPC classification number: H01L23/49827 ,  H01L21/31127 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/498 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5385 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16235 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81466 ,  H01L2224/81484 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/141 ,  H01L2924/143 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/20648 ,  H01L2924/3511 ,  H05K1/09 ,  H05K1/115 ,  H05K2201/09563 ,  H01L2924/014 ,  H01L2224/81

Abstract: A substrate block is provided that has an increased width. The substrate block comprises two substrate bars, and the substrate bars each comprise a substrate and a plurality of filled vias through the substrate. The substrate block may be used to manufacture package substrates, and these package substrate may be incorporated into a PoP structure. The package substrate includes a carrier having a plurality of vertical interconnections and a bar coupled to the vertical interconnections.

Abstract translation: 提供具有增加的宽度的衬底块。 衬底块包括两个衬底条，并且衬底条各自包括衬底和穿过衬底的多个填充的通孔。 衬底块可以用于制造封装衬底，并且这些封装衬底可以并入PoP结构中。 封装衬底包括具有多个垂直互连的载体和耦合到垂直互连的条。

公开(公告)号：US20150294933A1

公开(公告)日：2015-10-15

申请号：US14253798

申请日：2014-04-15

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Chin-Kwan Kim ,  Dong Wook Kim ,  Jae Sik Lee ,  Kyu-Pyung Hwang ,  Young Kyu Song

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/768 ,  H01L21/4857 ,  H01L21/76802 ,  H01L21/76838 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/49822 ,  H01L23/5283 ,  H01L23/5329 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/014

Abstract: An integrated circuit (IC) substrate that includes a second patterned metal layer formed in between a first patterned metal layer is disclosed. A dielectric layer formed on the first patterned metal layer separates the two metal layers. A non-conductive layer is formed on the dielectric layer and the second patterned metal layer.

Abstract translation: 公开了一种集成电路（IC）基板，其包括形成在第一图案化金属层之间的第二图案化金属层。 形成在第一图案化金属层上的电介质层分离两个金属层。 在介电层和第二图案化金属层上形成非导电层。

公开(公告)号：US20150236681A1

公开(公告)日：2015-08-20

申请号：US14249189

申请日：2014-04-09

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Dong Wook Kim ,  Kyu-Pyung Hwang ,  Young Kyu Song

IPC: H03K3/013 ,  H05K3/30 ,  H05K3/46 ,  G05F3/08 ,  H05K1/18 ,  H05K1/03

CPC classification number: H03K3/013 ,  G05F3/08 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2924/13091 ,  H01L2924/15311 ,  H05K1/0306 ,  H05K1/183 ,  H05K1/184 ,  H05K3/306 ,  H05K3/4697 ,  H05K2201/10015 ,  Y10T29/49139 ,  H01L2924/00

Abstract: An embedded multi-terminal capacitor embedded in a substrate cavity includes at least one metal layer patterned into a plurality of power rails and a plurality of ground rails. The substrate includes an external power network.

Abstract translation: 嵌入在衬底空腔中的嵌入式多端子电容器包括图案化成多个电源轨道和多个接地轨道的至少一个金属层。 基板包括外部电力网络。

公开(公告)号：US09041212B2

公开(公告)日：2015-05-26

申请号：US13787476

申请日：2013-03-06

Applicant: QUALCOMM Incorporated

Inventor： Dong Wook Kim ,  Victor Adrian Chiriac ,  Kyu-Pyung Hwang ,  Changhan Hobie Yun ,  Young Kyu Song

IPC: H01L23/48 ,  H01L23/34 ,  H01L23/367 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L23/34 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5389 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2924/0002 ,  H01L2924/15311 ,  H01L2924/00

Abstract: Some implementations provide a semiconductor package structure that includes a package substrate, a first package, an interposer coupled to the first package, and a first set of through via insert (TVI). The first set of TVI is coupled to the interposer and the package substrate. The first set of TVI is configured to provide heat dissipation from the first package. In some implementations, the semiconductor package structure further includes a heat spreader coupled to the interposer. The heat spreader is configured to dissipate heat from the first package. In some implementations, the first set of TVI is further configured to provide an electrical path between the first package and the package substrate. In some implementations, the first package is electrically coupled to the package substrate through the interposer and the first set of TVI. In some implementations, the first set of TVI includes a dielectric layer and a metal layer.

Abstract translation: 一些实施方案提供半导体封装结构，其包括封装衬底，第一封装，耦合到第一封装的插入器和第一组通孔插入件（TVI）。 第一组TVI耦合到插入器和封装衬底。 第一组TVI被配置为提供第一包装的散热。 在一些实施方案中，半导体封装结构还包括耦合到插入件的散热器。 散热器被配置为从第一包装散发热量。 在一些实施方式中，第一组TVI被进一步配置成在第一封装和封装衬底之间提供电路径。 在一些实施方案中，第一封装通过插入器和第一组TVI电耦合到封装衬底。 在一些实施方案中，第一组TVI包括电介质层和金属层。

公开(公告)号：US08952504B2

公开(公告)日：2015-02-10

申请号：US13777475

申请日：2013-02-26

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Rongtian Zhang ,  Vidhya Ramachandran ,  Dong Wook Kim

IPC: H01L23/552 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L23/3121 ,  H01L23/552 ,  H01L23/645 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2924/0002 ,  H01L2924/1435 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Some implementations provide a die that includes a magnetoresistive random access memory (MRAM) cell array that includes several MRAM cells. The die also includes a first ferromagnetic layer positioned above the MRAM cell array, a second ferromagnetic layer positioned below the MRAM cell array, and several vias positioned around at least one MRAM cell. The via comprising a ferromagnetic material. In some implementations, the first ferromagnetic layer, the second ferromagnetic layer and the several vias define a magnetic shield for the MRAM cell array. The MRAM cell may include a magnetic tunnel junction (MTJ). In some implementations, the several vias traverse at least a metal layer and a dielectric layer of the die. In some implementations, the vias are through substrate vias. In some implementations, the ferromagnetic material has high permeability and high B saturation.

Abstract translation: 一些实施方案提供了包括包括几个MRAM单元的磁阻随机存取存储器（MRAM）单元阵列的管芯。 芯片还包括位于MRAM单元阵列上方的第一铁磁层，位于MRAM单元阵列下方的第二铁磁层和位于至少一个MRAM单元周围的几个通孔。 通孔包括铁磁材料。 在一些实施方案中，第一铁磁层，第二铁磁层和几个通孔限定用于MRAM单元阵列的磁屏蔽。 MRAM单元可以包括磁性隧道结（MTJ）。 在一些实施方案中，几个通孔至少穿过管芯的金属层和电介质层。 在一些实施方案中，通孔通过衬底通孔。 在一些实施方案中，铁磁材料具有高磁导率和高B饱和度。

公开(公告)号：US20140167273A1

公开(公告)日：2014-06-19

申请号：US13719984

申请日：2012-12-19

Applicant: QUALCOMM INCORPORATED

Inventor： Jonghae Kim ,  Chengjie Zuo ,  Changhan Yun ,  Mario Francisco Velez ,  Ravindra V. Shenoy ,  Matthew M. Nowak ,  Francesco Carobolante ,  Kyu-Pyung Hwang ,  Dong Wook Kim ,  Young K. Song

IPC: H01L23/482 ,  H01L23/00

CPC classification number: H01L21/6836 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L2221/68345 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/1517 ,  H01L2924/181 ,  H05K1/185 ,  H05K3/4602 ,  H05K2201/10015 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

Abstract: One feature pertains to a multi-layer package substrate of an integrated circuit package that comprises a discrete circuit component (DCC) having at least one electrode. The DCC is embedded within an insulator layer, and a via coupling component electrically couples to the electrode. A first portion of the via coupling component extends beyond a first edge of the electrode, and a plurality of vias each having a first end couple to the first via coupling component. At least a first via of the plurality of vias couples to the first portion of the via coupling component that extends beyond the first edge of the electrode. Moreover, the plurality of vias each have a second end that electrically couple to a first outer metal layer, and at least a second portion of the via coupling component is positioned within a first inner metal layer.

Abstract translation: 一个特征涉及集成电路封装的多层封装衬底，其包括具有至少一个电极的分立电路部件（DCC）。 DCC嵌入在绝缘体层内，并且通孔耦合部件电耦合到电极。 通孔耦合部件的第一部分延伸超过电极的第一边缘，并且多个通孔各自具有耦合到第一通路耦合部件的第一端。 多个通孔中的至少第一通孔耦合到延伸超出电极的第一边缘的通孔连接部件的第一部分。 此外，多个通孔各自具有电耦合到第一外部金属层的第二端，并且通孔连接部件的至少第二部分位于第一内部金属层内。

公开(公告)号：US20140139969A1

公开(公告)日：2014-05-22

申请号：US13684072

申请日：2012-11-21

Applicant: QUALCOMM INCORPORATED

Inventor： Kyu-Pyung Hwang ,  Youngsville K. Song ,  Changhan Yun ,  Dong Wook Kim

IPC: H01G4/002

CPC classification number: H01G4/002 ,  H01G4/012 ,  H01G4/33 ,  H01L23/50 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/19105 ,  Y10T29/417 ,  H01L2924/00

Abstract: Some novel features pertain to a capacitor structure that includes a first conductive layer, a second conductive layer and a non-conductive layer. The first conductive layer has a first overlapping portion and a second overlapping portion. The second conductive layer has a third overlapping portion, a fourth overlapping portion, and a non-overlapping portion. The third overlapping portion overlaps with the first overlapping portion of the first conductive layer. The fourth overlapping portion overlaps with the second overlapping portion of the first conductive layer. The non-overlapping portion is free of any overlap (e.g., vertical overlap) with the first conductive layer. The non-conductive layer separates the first and second conductive layers. The non-conductive layer electrically insulates the third overlapping portion and the fourth overlapping portion from the first conductive layer.

Abstract translation: 一些新颖的特征涉及包括第一导电层，第二导电层和非导电层的电容器结构。 第一导电层具有第一重叠部分和第二重叠部分。 第二导电层具有第三重叠部分，第四重叠部分和非重叠部分。 第三重叠部分与第一导电层的第一重叠部分重叠。 第四重叠部分与第一导电层的第二重叠部分重叠。 非重叠部分与第一导电层没有任何重叠（例如，垂直重叠）。 非导电层分离第一和第二导电层。 非导电层将第三重叠部分和第四重叠部分与第一导电层电绝缘。