公开(公告)号：US10608124B2

公开(公告)日：2020-03-31

申请号：US15957484

申请日：2018-04-19

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  Fabio Alessio Marino ,  Narasimhulu Kanike ,  Plamen Vassilev Kolev ,  Qingqing Liang ,  Paolo Menegoli ,  Francesco Carobolante ,  Aristotele Hadjichristos

IPC: H01L29/93 ,  H01L29/06 ,  H01L29/45

Abstract: Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a semiconductor region, an insulative layer, a first terminal, and a first non-insulative region coupled to the first terminal, the insulative layer being disposed between the first non-insulative region and the semiconductor region. In certain aspects, the insulative layer is disposed adjacent to a first side of the semiconductor region. In certain aspects, the semiconductor device also includes a second terminal, and a first silicide layer coupled to the second terminal and disposed adjacent to a second side of the semiconductor region, the first side and the second side being opposite sides of the semiconductor region.

公开(公告)号：US10355134B2

公开(公告)日：2019-07-16

申请号：US15602915

申请日：2017-05-23

Applicant: QUALCOMM Incorporated

Inventor： Narasimhulu Kanike ,  Qingqing Liang ,  Fabio Alessio Marino ,  Francesco Carobolante

IPC: H01L29/78 ,  H01L23/522 ,  H01L23/528 ,  H01L29/66 ,  H01L29/06 ,  H01L27/08 ,  H01L27/092 ,  H01L29/93

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor device and techniques for fabricating a semiconductor device. In certain aspects, the semiconductor device includes a fin, a first non-insulative region disposed adjacent to a first side of the fin, and a second non-insulative region disposed adjacent to a second side of the fin. In certain aspects, the first non-insulative region and the second non-insulative region are separated by a trench, at least a portion of the trench being filled with a dielectric material disposed around the fin.

公开(公告)号：US10158030B2

公开(公告)日：2018-12-18

申请号：US15431623

申请日：2017-02-13

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Gengming Tao ,  Richard Hammond ,  Ranadeep Dutta ,  Matthew Michael Nowak ,  Francesco Carobolante

IPC: H01L29/93 ,  H01L29/20 ,  H01L29/22 ,  H01L29/47 ,  H01L29/737 ,  H01L29/66 ,  H01L27/06 ,  H01L21/822 ,  H01L23/00 ,  H01L23/66 ,  H03H11/34 ,  H03H11/04

Abstract: A tunable capacitor may include a first terminal having a first semiconductor component with a first polarity. The tunable capacitor may also include a second terminal having a second semiconductor component with a second polarity. The second component may be adjacent to the first semiconductor component. The tunable capacitor may further include a first conductive material electrically coupled to a first depletion region at a first sidewall of the first semiconductor component.

公开(公告)号：US10122215B2

公开(公告)日：2018-11-06

申请号：US15081092

申请日：2016-03-25

Applicant: QUALCOMM Incorporated

Inventor： Sumukh Ashok Shevde ,  Francesco Carobolante ,  Joseph Najib Maalouf

IPC: H01F27/42 ,  H01F37/00 ,  H01F38/00 ,  H02J50/12 ,  H04B5/00

Abstract: An apparatus for receiving wireless power is provided. The apparatus comprises a coupler configured to receive a first amount of wireless power via a wireless field generated by a wireless power transmitter. The apparatus comprises a sensor circuit configured to measure the first amount of wireless power. The apparatus comprises a controller configured to instruct a feedback circuit to provide an indication to a user based on a comparison of the first amount of wireless power measured by the sensor circuit to a power threshold.

公开(公告)号：US10115835B2

公开(公告)日：2018-10-30

申请号：US15250493

申请日：2016-08-29

Applicant: QUALCOMM Incorporated

Inventor： Francesco Carobolante ,  Fabio Alessio Marino

IPC: H01L29/93 ,  H01L23/00 ,  H01L29/06 ,  H01L29/66 ,  H01L27/08

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor based on a buried oxide process. The semiconductor variable capacitor generally includes a first conductive pad coupled to a first non-insulative region and a second conductive pad coupled to a second non-insulative region. The second non-insulative region may be coupled to a semiconductor region. The capacitor may also include a first control region coupled to the first semiconductor region such that a capacitance between the first conductive pad and the second conductive pad is configured to be adjusted by varying a control voltage applied to the first control region. The capacitor also includes an insulator region disposed below the semiconductor region, wherein at least a portion of the first non-insulative region is separated from the second non-insulative region by the insulator region such that the first conductive pad is electrically isolated from the second conductive pad.

公开(公告)号：US09985145B1

公开(公告)日：2018-05-29

申请号：US15494187

申请日：2017-04-21

Applicant: QUALCOMM Incorporated

Inventor： Qingqing Liang ,  Francesco Carobolante ,  Fabio Alessio Marino ,  Narasimhulu Kanike

IPC: H01L29/93 ,  H01L29/10 ,  H01L29/94 ,  H01L29/66

CPC classification number: H01L29/93 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/66189 ,  H01L29/94

Abstract: Certain aspects of the present disclosure provide a semiconductor capacitor. The semiconductor capacitor generally includes a first non-insulative region disposed above an insulative layer, an insulative region, and a second non-insulative region disposed adjacent to the insulative region, wherein the insulative layer is disposed above the second non-insulative region and the insulative region. In some cases, at least a portion of the insulative region is disposed above one or more portions of the second non-insulative region.

公开(公告)号：US20170353046A1

公开(公告)日：2017-12-07

申请号：US15171759

申请日：2016-06-02

Applicant: QUALCOMM Incorporated

Inventor： Jen Chen ,  William Henry Von Navak ,  Timothy Kerssen ,  Kelsey Burrell ,  Charles Edward Wheatley ,  Francesco Carobolante ,  Andrew Arnett ,  Yung-Ho Tsai ,  Xiaoyu Liu

IPC: H02J7/02 ,  H01F38/14 ,  H02J50/12

CPC classification number: H02J7/025 ,  H01F38/14 ,  H02J5/005 ,  H02J7/0027 ,  H02J7/0042 ,  H02J50/12 ,  H02J50/40 ,  H04B5/0037 ,  H04B5/0081

Abstract: Devices and methods for distributing power are disclosed. For example, one device includes multiple assemblable elements, each assemblable element is configured to permit interlocking between one or more of the multiple assemblable elements. The multiple assemblable elements each include a portion of a coil. The portions of the coil are electrically interconnected and configured to provide wireless power to a receiving device.

公开(公告)号：US09827430B1

公开(公告)日：2017-11-28

申请号：US15423171

申请日：2017-02-02

Applicant: QUALCOMM Incorporated

Inventor： William Henry Von Novak, III ,  Virginia Walker Keating ,  Francesco Carobolante

IPC: H01F37/00 ,  A61N1/378 ,  A61M31/00 ,  A61B5/00 ,  A61M37/00 ,  H02J50/00

CPC classification number: A61N1/3787 ,  A61B5/686 ,  A61B2560/0219 ,  A61M31/002 ,  A61M37/0076 ,  A61M2205/04 ,  A61M2205/3523 ,  A61M2205/8206 ,  A61M2205/8243 ,  A61M2210/04 ,  H02J7/025 ,  H02J50/00 ,  H02J50/10

Abstract: The present disclosure describes aspects of injected conductive tattoos for powering implants. In some aspects, a system comprises a conductive tattoo used to efficiently transfer power wirelessly received from a transmitter outside a body to an electronic device in the body. The conductive tattoo is formed from a conductive material injected into an outermost permanent layer of the body. The conductive tattoo is configured to wirelessly receive and relay the power from the transmitter to the electronic device. In particular, the conductive tattoo may transfer the power to the electronic device over a coupling between the conductive tattoo and the electronic device.

公开(公告)号：US20170222467A1

公开(公告)日：2017-08-03

申请号：US15265395

申请日：2016-09-14

Applicant: QUALCOMM Incorporated

Inventor： Seong Heon Jeong ,  Francesco Carobolante ,  Charles Edward Wheatley ,  Mark White, II

IPC: H02J7/02 ,  H02J7/04 ,  H02J50/12

CPC classification number: H02J7/025 ,  H01F27/02 ,  H01F27/36 ,  H01F38/14 ,  H02J5/005 ,  H02J7/045 ,  H02J50/10 ,  H02J50/12 ,  H02J50/80 ,  H04B5/0037 ,  H04B5/0081

Abstract: An apparatus may include an electrically conductive body to magnetically couple to a first magnetic field. A first tuning element may be connected to the electrically conductive body. An electrically conductive coil may be wound about an opening in the electrically conductive body, and configured to magnetically couple to a second magnetic field.

公开(公告)号：US20170074908A1

公开(公告)日：2017-03-16

申请号：US14854443

申请日：2015-09-15

Applicant: QUALCOMM Incorporated

Inventor： Saeed Nejatali ,  Seong Heon Jeong ,  Francesco Carobolante ,  David Fern

IPC: G01R15/20 ,  H02J7/04 ,  H02J7/02

CPC classification number: G01R15/20 ,  G01R15/181 ,  G01R19/0092 ,  G01R33/0076 ,  H02J7/025 ,  H02J7/04 ,  H02J50/12 ,  H04B5/0037 ,  H04B5/0081

Abstract: A current sensor may include a sense element disposed proximate a conductor. The current sensor may be configured to couple to a first magnetic field generated at the conductor when current flows in the conductor. An output electrically connected to the sense element can produce a signal that is representative of the flow of current in the conductor. The sense element may be oriented in a plane parallel to magnetic field lines of a second magnetic field generated by a load connected to the conductor.

Abstract translation: 电流传感器可以包括设置在导体附近的感测元件。 电流传感器可以被配置为当电流在导体中流动时耦合到在导体处产生的第一磁场。 电连接到感测元件的输出可以产生代表导体中的电流的信号。 感测元件可以在与由连接到导体的负载产生的第二磁场的磁场线平行的平面中取向。