摘要:
A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.
摘要:
Packaged chips comprising non-integer lead pitches, systems and methods for manufacturing packaged chips are disclosed. In one embodiment a packaged device includes a first chip, a package encapsulating the first chip and a plurality of leads protruding from the package, wherein the plurality of leads comprises differing non-integer multiple lead pitches.
摘要:
Illustrative embodiments of an anisotropic conductive adhesive (ACA) configured to be cured after being subjected to a magnetic field are disclosed. In at least one illustrative embodiment, the ACA may comprise a binder and a plurality of particles suspended in the binder. Each of the plurality of particles may comprise a ferromagnetic material coated with a layer of electrically conductive material and with a moisture barrier, such that the electrically conducting material forms electrically conductive and isolated parallel paths when the ACA is cured after being subjected to the magnetic field.
摘要:
A method of manufacturing a semiconductor device includes attaching a curable film to a first connection member including a first circuit terminal, attaching a conductive film to a second connection member including a second circuit terminal, and thermally compressing the first connection member to the second connection member, with the first connection member and the second connection member placed such that the curable film and the conductive film face each other.
摘要:
A semiconductor device includes a first connecting member having a first electrode, a second connecting member having a second electrode, and an anisotropic conductive film between the first connecting member and the second connecting member, the anisotropic conductive film electrically connecting the first and second electrodes to each other. The anisotropic conductive film includes a polymer binder resin, an epoxy resin, conductive particles, and a curing agent. The epoxy resin includes a naphthalene ring-containing epoxy resin and a dicyclopentadiene ring-containing epoxy resin. The naphthalene ring-containing epoxy resin is included in an amount of 100 parts by weight to 500 parts by weight based on 100 parts by weight of the dicyclopentadiene ring-containing epoxy resin.
摘要:
Integrated circuit structures and methods are provided. According to an embodiment, a circuit structure includes a die and an anisotropic conducting film (ACF). The die comprises a through via, and the through via protrudes from a surface of the die. A cross-sectional area of the through via in the surface of the die is equal to a cross-sectional area of a protruding portion of the through via in a plane parallel to the surface of the die. The ACF adjoins the surface of the die, and the protruding portion of the through via penetrates the ACF.
摘要:
A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.
摘要:
An electronic device includes an anisotropic conductive film as a connection material, the anisotropic conductive film being formed from an anisotropic conductive film-forming composition. The anisotropic conductive film-forming composition includes a polycyclic aromatic ring-containing epoxy resin, a fluorene epoxy resin, nano silica and conductive particles.
摘要:
A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a phenoxy resin including a fluorene-substituted phenoxy resin; and a radically polymerizable resin including a fluorene-substituted acrylate.
摘要:
A light-reflective conductive particle for an anisotropic conductive adhesive used for connecting a light-emitting element to a wiring board by anisotropic conductive connection includes a core particle covered with a metal material and a light reflecting layer formed of a light-reflective inorganic particle having a refractive index of 1.52 or greater on the surface of the core particle. Examples of the light-reflective inorganic particles having a refractive index of 1.52 or greater include a titanium oxide particle, a zinc oxide particle, and an aluminum oxide particle. The coverage of the light reflecting layer on the surface of the core particle is 70% or more.