公开(公告)号：US20020153256A1

公开(公告)日：2002-10-24

申请号：US10165673

申请日：2002-06-06

申请人： Nutool, Inc.

发明人： Cyprian Emeka Uzoh ,  Homayoun Talieh

IPC分类号： C25D005/06 ,  C25D005/52 ,  C25D017/00

CPC分类号： H01L23/53238 ,  B24B37/042 ,  B24B37/20 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  C25D5/00 ,  C25D5/02 ,  C25D5/06 ,  C25D5/22 ,  C25D5/50 ,  C25D7/123 ,  C25D17/14 ,  C25D21/02 ,  C25F7/00 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/6715 ,  H01L21/76838 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： The present invention provides a method and apparatus for plating a conductive material to a substrate and also modifying the physical properties of a conductive film while the substrate is being plated. The present invention further provides a method and apparatus that plates a conductive material on a workpiece surface in a nullproximitynull plating manner while a pad type material or other fixed feature is making contact with the workpiece surface in a nullcold workednull manner. In this manner, energy stored in the cold worked regions of the plated layer is used to accelerate and enhance micro-structural recovery and growth. Thus, large grain size is obtained in the plated material at a lower annealing temperature and a shorter annealing time.

公开(公告)号：US20020139682A1

公开(公告)日：2002-10-03

申请号：US09982558

申请日：2001-10-17

发明人： Bulent M. Basol ,  Cyprian Uzoh ,  Homayoun Talieh

IPC分类号： C25D005/22 ,  C25D005/06 ,  C25D017/00

CPC分类号： B24B53/017 ,  B24B37/04 ,  B24B53/001 ,  C25D5/22 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76877

摘要： Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. According to an exemplary method, the workpiece surface influencing device is occasionally placed in contact with a conditioning substrate coated with an inert material, and the bias applied to the electrodeposition system is reversed. According to another exemplary method, the workpiece surface influencing device is conditioned using mechanical contact members, such as brushes, and conditioning of the workpiece surface influencing device occurs, for example, through physical brushing of the workpiece surface influencing device with the brushes. According to a further exemplary method, the workpiece surface influencing device is rotated in different direction during electrodeposition.

摘要翻译： 提出了用于去除或减小在电沉积期间使用的工件表面影响装置上形成金属颗粒的尺寸并限制金属颗粒形成或生长的速率的系统和方法。 根据示例性的方法，工件表面影响装置偶尔地与涂覆有惰性材料的调理基板接触，并且施加到电沉积系统的偏压被反转。 根据另一示例性方法，使用诸如刷子的机械接触构件对工件表面影响装置进行调节，并且例如通过用刷子物理刷刷工件表面影响装置来发生工件表面影响装置的调节。 根据另一示例性方法，在电沉积期间，工件表面影响装置在不同方向上旋转。

公开(公告)号：US20020117330A1

公开(公告)日：2002-08-29

申请号：US10035633

申请日：2001-12-28

申请人： FormFactor, Inc.

发明人： Benjamin Niles Eldridge ,  Gary William Grube ,  Igor Yan Khandros ,  Gaetan L. Mathieu

IPC分类号： H05K007/02 ,  H01L021/44

CPC分类号： H05K7/1069 ,  B23K20/004 ,  B23K2101/40 ,  C23C18/31 ,  C23C18/32 ,  C23C18/38 ,  C25D5/08 ,  C25D5/22 ,  C25D21/02 ,  G01R1/0483 ,  G01R1/06711 ,  G01R1/07314 ,  G01R1/07342 ,  G01R1/07357 ,  G01R1/07378 ,  G01R31/2884 ,  G01R31/2886 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L21/6715 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/20 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/72 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0652 ,  H01L25/16 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13082 ,  H01L2224/13099 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/16145 ,  H01L2224/45015 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45123 ,  H01L2224/45124 ,  H01L2224/45138 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45163 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45176 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/49109 ,  H01L2224/73203 ,  H01L2224/78301 ,  H01L2224/81801 ,  H01L2224/85043 ,  H01L2224/85045 ,  H01L2224/851 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/20751 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01R12/52 ,  H05K1/141 ,  H05K3/20 ,  H05K3/308 ,  H05K3/326 ,  H05K3/3421 ,  H05K3/3426 ,  H05K3/368 ,  H05K3/4015 ,  H05K3/4092 ,  H05K2201/0397 ,  H05K2201/068 ,  H05K2201/1031 ,  H05K2201/10318 ,  H05K2201/10378 ,  H05K2201/10719 ,  H05K2201/10734 ,  H05K2201/10757 ,  H05K2201/10878 ,  H05K2201/10909 ,  H05K2201/10946 ,  Y02P70/611 ,  Y02P70/613 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49174 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/49213 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/00012 ,  H01L2924/20752 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/00015 ,  H01L2924/2075 ,  H01L2924/01204 ,  H01L2924/013 ,  H01L2924/01004 ,  H01L2924/01048

摘要： Contact structures exhibiting resilience or compliance for a variety of electronic components are formed by bonding a free end of a wire to a substrate, configuring the wire into a wire stem having a springable shape, severing the wire stem, and overcoating the wire stem with at least one layer of a material chosen primarily for its structural (resiliency, compliance) characteristics. A variety of techniques for configuring, severing, and overcoating the wire stem are disclosed. In an exemplary embodiment, a free end of a wire stem is bonded to a contact area on a substrate, the wire stem is configured to have a springable shape, the wire stem is severed to be free-standing by an electrical discharge, and the free-standing wire stem is overcoated by plating. A variety of materials for the wire stem (which serves as a falsework) and for the overcoat (which serves as a superstructure over the falsework) are disclosed. Various techniques are described for mounting the contact structures to a variety of electronic components (e.g., semiconductor wafers and dies, semiconductor packages, interposers, interconnect substrates, etc.), and various process sequences are described. The resilient contact structures described herein are ideal for making a nulltemporarynull (probe) connections to an electronic component such as a semiconductor die, for burn-in and functional testing. The self-same resilient contact structures can be used for subsequent permanent mounting of the electronic component, such as by soldering to a printed circuit board (PCB). An irregular topography can be created on or imparted to the tip of the contact structure to enhance its ability to interconnect resiliently with another electronic component. Among the numerous advantages of the present invention is the great facility with which the tips of a plurality of contact structures can be made to be coplanar with one another. Other techniques and embodiments, such as wherein the falsework wirestem protrudes beyond an end of the superstructure, or is melted down, and wherein multiple free-standing resilient contact structures can be fabricated from loops, are described.

公开(公告)号：US06402925B2

公开(公告)日：2002-06-11

申请号：US09738561

申请日：2000-12-14

申请人： Homayoun Talieh

发明人： Homayoun Talieh

IPC分类号： C25D552

CPC分类号： B24B37/26 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/22 ,  H01L21/2885 ,  H01L21/3212

摘要： The present invention deposits a conductive material from an electrolyte solution to a predetermined area of a wafer and thereafter electropolishes the wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed between a cathode and an anode, and preventing accumulation of the conductive material to areas other than the predetermined area by mechanically polishing the other areas while conductive material is being applied. Thereafter, electropolishing of the previously applied conductive material takes place by applying a second potential difference having a polarity opposite the first potential difference that was used when applying the conductive material. While applying the second potential difference, polishing of the conductive layer with the previously accumulated conductive material disposed thereover is performed.

摘要翻译： 本发明将导电材料从电解质溶液沉积到晶片的预定区域，然后对晶片进行电解抛光。 在进行该应用时使用的步骤包括：当晶片设置在阴极和阳极之间时，使用设置在晶片表面上的电解质溶液将导电材料施加到晶片的预定区域，并且防止 通过在施加导电材料的同时机械抛光其它区域，将导电材料施加到除了预定区域之外的区域。 此后，通过施加极性与施加导电材料时使用的第一电位差相反的极性的第二电位差来进行先前施加的导电材料的电解抛光。 在施加第二电位差的同时，执行其上布置有预先累积的导电材料的导电层的抛光。

公开(公告)号：US20020004320A1

公开(公告)日：2002-01-10

申请号：US09205502

申请日：1998-12-04

发明人： DAVID V. PEDERSEN ,  BENJAMIN N. ELDRIDGE ,  IGOR Y. KHANDROS

IPC分类号： H05K001/00

CPC分类号： H01L25/16 ,  B23K1/0016 ,  B23K20/004 ,  B23K2101/40 ,  C25D5/08 ,  C25D5/22 ,  C25D21/02 ,  G01R1/0408 ,  G01R1/0433 ,  G01R1/06711 ,  G01R1/07342 ,  G01R1/07378 ,  G01R31/01 ,  G01R31/2863 ,  G01R31/2886 ,  G01R31/2889 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L22/20 ,  H01L23/04 ,  H01L23/13 ,  H01L23/32 ,  H01L23/49811 ,  H01L23/5385 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/49 ,  H01L24/72 ,  H01L24/81 ,  H01L25/0652 ,  H01L2223/54473 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/49109 ,  H01L2224/73203 ,  H01L2224/81136 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19043 ,  H05K1/141 ,  H05K3/20 ,  H05K3/325 ,  H05K3/326 ,  H05K3/3421 ,  H05K3/368 ,  H05K3/4015 ,  H05K2201/09472 ,  H05K2201/1031 ,  H05K2201/10318 ,  H05K2201/10757 ,  H05K2201/10878 ,  H05K2201/10909 ,  H05K2201/10946 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/48

摘要： Products and assemblies are provided for socketably receiving elongate interconnection elements, such as spring contact elements, extending from electronic components, such as semiconductor devices. Socket substrates are provided with capture pads for receiving ends of elongate interconnection elements extending from electronic components. Various capture pad configurations are disclosed. Connections to external devices are provided via conductive traces adjacent the surface of the socket substrate. The socket substrate may be supported by a support substrate. In a particularly preferred embodiment the capture pads are formed directly on a primary substrate such as a printed circuit board.

摘要翻译： 提供产品和组件用于可插拔地接收从电子部件（例如半导体器件）延伸的细长互连元件，例如弹簧接触元件。 插座基板设置有用于接收从电子部件延伸的细长互连元件的端部的捕获垫。 公开了各种捕获垫结构。 通过邻近插座基板表面的导电迹线提供与外部设备的连接。 插座基板可以由支撑基板支撑。 在特别优选的实施例中，捕获垫直接形成在诸如印刷电路板的主要基底上。

公开(公告)号：US6150186A

公开(公告)日：2000-11-21

申请号：US217589

申请日：1998-12-22

申请人： Jimmy Kuo-Wei Chen ,  Benjamin N. Eldridge ,  Thomas H. Dozier ,  Junjye J. Yeh ,  Gayle J. Herman

发明人： Jimmy Kuo-Wei Chen ,  Benjamin N. Eldridge ,  Thomas H. Dozier ,  Junjye J. Yeh ,  Gayle J. Herman

IPC分类号： B23K20/00 ,  B81B7/00 ,  C23C18/16 ,  C25D5/08 ,  C25D5/22 ,  C25D7/00 ,  C25D7/12 ,  C25D21/02 ,  G01R1/067 ,  G01R1/073 ,  G01R3/00 ,  G01R31/28 ,  H01H1/00 ,  H01L21/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L21/603 ,  H01L21/66 ,  H01L21/768 ,  H01L23/48 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L25/065 ,  H01L25/16 ,  H05K1/14 ,  H05K3/20 ,  H05K3/32 ,  H05K3/34 ,  H05K3/36 ,  H05K3/40

CPC分类号： B23K20/004 ,  B81B7/0006 ,  C23C18/1692 ,  C23C18/36 ,  C23C18/50 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L22/20 ,  H01L23/49811 ,  H01L24/06 ,  H01L24/72 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/16 ,  H05K3/326 ,  H05K3/4015 ,  B23K2201/40 ,  C25D21/02 ,  C25D5/08 ,  C25D5/22 ,  C25D7/123 ,  G01R1/06761 ,  G01R3/00 ,  H01H1/0036 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/13144 ,  H01L2224/1357 ,  H01L2224/13655 ,  H01L2224/16145 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L24/45 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1532 ,  H01L2924/30107 ,  H05K1/141 ,  H05K2201/1031 ,  H05K2201/10318 ,  H05K2201/10757 ,  H05K2201/10878 ,  H05K2201/10909 ,  H05K2201/10946 ,  H05K3/20 ,  H05K3/3421 ,  H05K3/368 ,  Y02P70/611 ,  Y10T428/12438

摘要： Deposition of metal in a preferred shape, including coatings on parts, or stand-alone materials, and subsequent heat treatment to provide improved mechanical properties. In particular, the method gives products with relatively high yield strength. The products often have relatively high elastic modulus, and are thermally stable, maintaining the high yield strength at temperatures considerably above 25.degree. C. This technique involves depositing a material in the presence of a selected additive, and then subjecting the deposited material to a moderate heat treatment. This moderate heat treatment differs from other commonly employed "stress relief" heat treatments in using lower temperatures and/or shorter times, preferably just enough to reorganize the material to the new, desired form. Coating a shape and heat treating provides a shaped deposit with improved material properties. Coating a shape with a portion connected to a base and a portion detached therefrom can provide a resilient, conductive contact useful for electronic applications.

摘要翻译： 将金属沉积在优选的形状中，包括部件上的涂层或独立材料，以及随后的热处理以提供改进的机械性能。 特别地，该方法给出具有较高屈服强度的产品。 产品通常具有相对较高的弹性模量，并且是热稳定的，在高于25℃的温度下保持高的屈服强度。该技术涉及在选定的添加剂的存在下沉积材料，然后使沉积的材料经受温和 热处理。 这种适度的热处理与使用较低温度和/或更短时间的其它常用的“应力消除”热处理不同，优选刚好足以将材料重组成新的期望形式。 涂覆形状和热处理提供具有改善的材料性质的成形沉积物。 涂覆具有连接到基部的部分和从其分离的部分的形状可以提供用于电子应用的弹性导电接触。

公开(公告)号：US6123815A

公开(公告)日：2000-09-26

申请号：US483527

申请日：2000-01-14

申请人： Ryushin Omasa

发明人： Ryushin Omasa

IPC分类号： C23C18/16 ,  C25D5/00 ,  C25D5/22 ,  C25D21/10 ,  H05K3/00 ,  C25D17/00 ,  C25B9/00

CPC分类号： C25D5/22 ,  C23C18/1653 ,  C23C18/1669 ,  C25D17/06 ,  C25D21/10 ,  C25D5/003 ,  C25D5/20 ,  H05K3/0088 ,  H05K2203/0292 ,  H05K2203/081 ,  H05K2203/1518 ,  Y10S205/92

摘要： An apparatus for use in at least one of a plating and a pretreatment for plating, comprising:(A) a vibrationally stirring apparatus for a treatment bath, the vibrationally stirring apparatus (A) being provided with vibration generating means having an vibration motor, and vibrationally stirring means for vibrating a vibration vane at an amplitude of 0.5 to 3.0 mm and at a vibrational frequency of 200 to 800 times per minute, the vibration vane being fixed in one stage or in multistage to a vibrating bar which vibrates in the treatment bath interlockingly with the vibration generating means;(B) an aeration apparatus for the treatment bath;(C) an apparatus for swinging an electrode bar for suspending the plating target thereon; and(D) an apparatus for applying vibration to the electrode bar.

摘要翻译： 一种用于电镀和预处理电镀中的至少一种的设备，包括：（A）一种用于处理浴的振动搅拌装置，所述振动搅拌装置（A）设置有具有振动马达的振动产生装置，以及 振动叶片振动振幅为0.5〜3.0mm，振动频率为200〜800次/分钟的振动搅拌装置，振动叶片固定在一个阶段或多个阶段，固定在一个在处理槽中振动的振动棒 与振动产生装置互锁; （B）处理浴的曝气装置; （C）用于使用于使电镀靶悬浮的电极棒摆动的装置; 和（D）用于对电极棒施加振动的装置。

公开(公告)号：US5983493A

公开(公告)日：1999-11-16

申请号：US839763

申请日：1997-04-15

申请人： Benjamin N. Eldridge ,  Gary W. Grube ,  Igor Y. Khandros ,  Gaetan L. Mathieu

发明人： Benjamin N. Eldridge ,  Gary W. Grube ,  Igor Y. Khandros ,  Gaetan L. Mathieu

IPC分类号： B23K20/00 ,  C23C18/16 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D21/02 ,  G01R1/067 ,  G01R1/073 ,  G01R31/28 ,  H01L21/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L21/603 ,  H01L21/66 ,  H01L23/48 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L25/065 ,  H01L25/16 ,  H05K1/14 ,  H05K3/20 ,  H05K3/32 ,  H05K3/40 ,  H01R43/00

CPC分类号： H05K3/4015 ,  B23K20/004 ,  C25D7/12 ,  G01R31/2884 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L22/20 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/72 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/16 ,  B23K2201/40 ,  C25D21/02 ,  C25D5/08 ,  C25D5/22 ,  G01R31/287 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/141 ,  H05K3/20 ,  H05K3/326 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49171

摘要： Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

摘要翻译： 弹性接触结构直接安装在半导体晶片上的接合焊盘上，在裸片与半导体晶片分离（分离）之前。 这使得半导体管芯能够通过具有设置在其表面上的多个端子的电路板等连接到半导体管芯来进行（例如，测试和/或烧入）。 接下来，半导体管芯可以从半导体晶片分离，因此可以使用相同的弹性接触结构来实现半导体管芯和其他电子部件（例如布线基板，半导体封装等）之间的互连。 使用本发明的全金属复合互连元件作为弹性接触结构，可以在至少150℃的温度下进行老化，并且可以在少于60分钟内完成。

公开(公告)号：US5932077A

公开(公告)日：1999-08-03

申请号：US20832

申请日：1998-02-09

申请人： H. Vincent Reynolds

发明人： H. Vincent Reynolds

IPC分类号： C25D1/10 ,  C25D5/20 ,  C25D17/00

CPC分类号： C25D5/20 ,  C23C18/1617 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1664 ,  C23C18/1666 ,  C23C18/1669 ,  C25D17/002 ,  C25D17/005 ,  C25D17/007 ,  C25D17/02 ,  C25D17/06 ,  C25D17/10 ,  C25D21/10 ,  C25D21/18 ,  C25D5/08 ,  C25D5/22 ,  Y10S204/07

摘要： A wet process apparatus, e.g., plating cell for plating a flat substrate introduces a flow of electrolyte or other plating solution across the surface of the substrate to be plated. The substrate is mounted on a holder that is positioned on a door that swings between a horizontal open position and a vertical closed position. There is a circular opening in a front wall against which the door seats. The door can have a sealing ring that contacts the wall of the cell outside of the opening. A cathode ring disposed in a recess in the periphery of the opening makes electrical contact with the substrate. The cathode ring can include a thin metal thieving ring. A fluid-powered rotary blade or wiper within the plating chamber rotates to draw bubbles or other impurities from the substrate, and a megasonic transducer applies megasonic acoustic energy to the solution, e.g., at 0.2 to 5 Mhz. The cell can be used for electroless or galvanic plating.

摘要翻译： 湿法处理装置，例如用于电镀平板基板的电镀槽，在电镀基板的表面上引入电解液或其它电镀液流。 衬底安装在位于门上的保持器上，该门在水平打开位置和垂直关闭位置之间摆动。 前门有一个圆形开口，门座与座椅相对。 门可以具有与开口外部的电池壁接触的密封环。 设置在开口周边的凹部中的阴极环与基板电接触。 阴极环可以包括薄金属盗窃环。 电镀室内的流体动力旋转刀片或擦拭器旋转以从衬底中吸出气泡或其他杂质，并且兆声传感器将超声波声能施加到溶液，例如以0.2至5Mhz。 电池可用于无电镀或电镀。

公开(公告)号：US5864946A

公开(公告)日：1999-02-02

申请号：US839758

申请日：1997-04-15

申请人： Benjamin N. Eldridge ,  Gary W. Grube ,  Igor Y. Khandros ,  Gaetan L. Mathieu

发明人： Benjamin N. Eldridge ,  Gary W. Grube ,  Igor Y. Khandros ,  Gaetan L. Mathieu

IPC分类号： B23K1/00 ,  B23K20/00 ,  C23C18/16 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D21/02 ,  G01R1/04 ,  G01R1/067 ,  G01R1/073 ,  G01R31/28 ,  H01L21/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L21/603 ,  H01L21/66 ,  H01L23/48 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L25/065 ,  H01L25/16 ,  H01R12/00 ,  H05K1/14 ,  H05K3/20 ,  H05K3/30 ,  H05K3/32 ,  H05K3/34 ,  H05K3/36 ,  H05K3/40 ,  H05K7/10 ,  H01R9/00

CPC分类号： H05K7/1069 ,  B23K1/0008 ,  B23K20/004 ,  C23C18/1605 ,  C23C18/165 ,  C25D7/12 ,  G01R1/07342 ,  G01R31/2884 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L21/6835 ,  H01L22/20 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/27 ,  H01L24/72 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0652 ,  H01L25/16 ,  H05K3/308 ,  H05K3/326 ,  H05K3/3426 ,  H05K3/4015 ,  B23K2201/40 ,  C25D21/02 ,  C25D5/08 ,  C25D5/22 ,  G01R31/2856 ,  G01R31/2863 ,  G01R31/2886 ,  H01L2223/54453 ,  H01L2224/02311 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0558 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/11003 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/13022 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/274 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45572 ,  H01L2224/45599 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48844 ,  H01L2224/49109 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/83851 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/90 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L23/544 ,  H01L24/45 ,  H01L24/49 ,  H01L24/83 ,  H01L24/90 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01R12/52 ,  H05K1/141 ,  H05K2201/0397 ,  H05K2201/068 ,  H05K2201/1031 ,  H05K2201/10318 ,  H05K2201/10378 ,  H05K2201/10719 ,  H05K2201/10734 ,  H05K2201/10757 ,  H05K2201/10878 ,  H05K2201/10909 ,  H05K2201/10946 ,  H05K3/20 ,  H05K3/3421 ,  H05K3/368 ,  H05K3/4092 ,  Y02P70/611 ,  Y02P70/613 ,  Y10S977/712 ,  Y10S977/723 ,  Y10T29/49004 ,  Y10T29/49117 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49169 ,  Y10T29/49171 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/4922 ,  Y10T29/49812 ,  Y10T428/12396 ,  Y10T428/12528

摘要： Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

摘要翻译： 弹性接触结构直接安装在半导体晶片上的接合焊盘上，在裸片与半导体晶片分离（分离）之前。 这使得半导体管芯能够通过具有设置在其表面上的多个端子的电路板等连接到半导体管芯来进行（例如，测试和/或烧入）。 接下来，半导体管芯可以从半导体晶片分离，因此可以使用相同的弹性接触结构来实现半导体管芯和其他电子部件（例如布线基板，半导体封装等）之间的互连。 使用本发明的全金属复合互连元件作为弹性接触结构，可以在至少150℃的温度下进行老化，并且可以在少于60分钟内完成。