专利检索 cpc:"H01L2224/85203" 第 4 页

31.

发明授权
Semiconductor device 有权
标题翻译：半导体器件

公开(公告)号：US08575733B2

公开(公告)日：2013-11-05

申请号：US13717464

申请日：2012-12-17

申请人： Renesas Electronics Corporation

发明人： Yohihiro Satou , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi

IPC分类号： H01L23/495

CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754

摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

摘要翻译： 本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOS.FET和用于低侧开关的功率MOS.FET串联连接。在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

32.

发明授权
Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out 失效
标题翻译：引线接合方法，其利用毛线管内的气流从其播出线

公开(公告)号：US08485418B2

公开(公告)日：2013-07-16

申请号：US12942709

申请日：2010-11-09

申请人： Benjamin N. Eldridge , Gary W. Grube , Igor Y. Khandros , Gaetan L. Mathieu

发明人： Benjamin N. Eldridge , Gary W. Grube , Igor Y. Khandros , Gaetan L. Mathieu

IPC分类号： B23K31/02

CPC分类号： B23K20/004 , B23K2101/40 , H01L23/13 , H01L23/49811 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/85 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/78301 , H01L2224/85043 , H01L2224/85045 , H01L2224/85099 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12044 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2924/00015 , H01L2924/2075 , H01L2924/20754 , H01L2924/013 , H01L2924/00013

摘要： Contact structures exhibiting resilience or compliance for a variety of electronic components are formed. A variety of materials for the wire stem (which serves as a falsework) and for the overcoat (which serves as a superstructure over the falsework) are disclosed. Various techniques are described for mounting the contact structures to a variety of electronic components (e.g., semiconductor wafers and dies, semiconductor packages, interposers, interconnect substrates, etc.), and various process sequences are described. The resilient contact structures described herein are ideal for making a “temporary” (probe) connections to an electronic component such as a semiconductor die, for burn-in and functional testing.

摘要翻译： 形成表现出各种电子部件的弹性或顺应性的接触结构。公开了用于线杆（用作脚手架）和外套（用作脚手架上的上部结构）的各种材料。描述了用于将接触结构安装到各种电子部件（例如，半导体晶片和管芯，半导体封装，插入件，互连衬底等）的各种技术，并且描述了各种工艺顺序。本文所述的弹性接触结构对于进行诸如半导体管芯的电子部件的“临时”（探针）连接是理想的，用于老化和功能测试。

33.

发明申请
RIBBON BONDING TOOLS AND METHODS OF USING THE SAME 审中-公开

公开(公告)号：US20130119111A1

公开(公告)日：2013-05-16

申请号：US13738421

申请日：2013-01-10

申请人： ORTHODYNE ELECTRONICS CORPORATION

发明人： Mark A. Delsman , Theodore J. Copperthite , Garrett W. Jones , Todd J. Walker , Tick-Kwang Loh , Jay C. McCandless

IPC分类号： B23K20/10

CPC分类号： H01L24/78 , B23K20/004 , B23K20/007 , B23K20/10 , B23K20/106 , H01L24/48 , H01L24/85 , H01L2224/45014 , H01L2224/48091 , H01L2224/4813 , H01L2224/48247 , H01L2224/4846 , H01L2224/48472 , H01L2224/78313 , H01L2224/78314 , H01L2224/78316 , H01L2224/85181 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2924/00014 , H01L2924/01033 , H01L2924/01075 , H01L2924/01082 , H01L2924/12042 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/206

摘要： A ribbon bonding tool including a body portion is provided. The body portion includes a tip portion. The tip portion includes a working surface between a front edge of the tip portion and a back edge of the tip portion. The working surface includes a region defining at least one of a plurality of recesses and a plurality of protrusions. The working surface also defines at least one of (1) a first planar portion between the region and the front edge of the tip portion, and (2) a second planar portion between the region and the back edge of the tip portion.

34.

发明授权
Bonding wire for semiconductor devices 有权
标题翻译：半导体器件用接合线

公开(公告)号：US08389860B2

公开(公告)日：2013-03-05

申请号：US12669612

申请日：2008-12-03

申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada

发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada

IPC分类号： H01B5/00 , H01B7/18 , H01B9/02

CPC分类号： C22C5/02 , B23K35/0222 , B23K35/302 , C22C5/04 , C22C5/06 , C22C9/00 , C22C9/01 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45683 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48486 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2924/01004 , H01L2924/01001 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/20658 , H01L2224/48227 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/00014 , H01L2924/0104 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006

摘要： A bonding wire for semiconductor devices includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of orientations in crystalline orientations in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the orientations have an angular difference relative to the wire lengthwise direction. The angular difference is within 15 degrees.

摘要翻译： 用于半导体器件的接合线包括由导电金属形成的芯部件和主要由不同于芯部件的面心立方金属形成在其上的表皮层。在皮肤层表面的晶面处的线长度方向上的取向<100 <方向<100>的取向比大于或等于50％，并且<100>取向具有相对的角度差到电线长度方向。角度差在15度以内。

35.

发明授权
Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法

公开(公告)号：US08383456B2

公开(公告)日：2013-02-26

申请号：US13439992

申请日：2012-04-05

申请人： Mikako Okada , Toshikazu Ishikawa

发明人： Mikako Okada , Toshikazu Ishikawa

IPC分类号： H01L21/44 , H01L21/48 , H01L21/50

CPC分类号： H01L23/50 , H01L21/561 , H01L23/3128 , H01L23/49827 , H01L23/49838 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/28 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/18 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/056 , H01L2224/05624 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48228 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/49171 , H01L2224/49431 , H01L2224/73204 , H01L2224/73265 , H01L2224/75 , H01L2224/75251 , H01L2224/81203 , H01L2224/81801 , H01L2224/83101 , H01L2224/83102 , H01L2224/83192 , H01L2224/83855 , H01L2224/85051 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85986 , H01L2224/92125 , H01L2224/92247 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06562 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10162 , H01L2924/12041 , H01L2924/14 , H01L2924/1517 , H01L2924/15183 , H01L2924/15192 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/30105 , H01L2924/3511 , H01L2224/83 , H01L2224/85 , H01L2224/81 , H01L2224/85186 , H01L2924/00012 , H01L2924/00 , H01L2224/13111 , H01L2924/3512 , H01L2224/45099 , H01L2224/4554

摘要： A multilayer wiring substrate has an upper surface with multiple bonding leads and a lower surface with multiple lands. Multiple wiring layers and insulating layers are alternately formed on the upper surface side and on the lower surface side of the core material of the wiring substrate. The bonding leads are formed of part of the uppermost wiring layer and the lands are formed of part of the lowermost wiring layer. The insulating layers include second insulating layers containing fiber and resin and third insulating layers smaller in fiber content than the second insulating layers. The second insulating layers are formed on the upper and lower surface sides of the core material. The third insulating layers are formed on the upper and lower surface sides of the core material with the second insulating layers in-between. The uppermost and lowermost wiring layers are formed over the third insulating layers.

摘要翻译： 多层布线基板具有多个接合引线的上表面和具有多个焊盘的下表面。在布线基板的芯材的上表面侧和下表面侧交替形成多个布线层和绝缘层。接合引线由最上层布线层的一部分形成，焊盘由最下层布线层的一部分形成。绝缘层包括含有纤维和树脂的第二绝缘层和比第二绝缘层小的纤维含量的第三绝缘层。第二绝缘层形成在芯材的上表面和下表面上。第三绝缘层形成在芯材的上表面和下表面之间，其间具有第二绝缘层。最上面和最下面的布线层形成在第三绝缘层上。

36.

发明授权
Semiconductor device including a DC-DC converter 有权
标题翻译：包括DC-DC转换器的半导体器件

公开(公告)号：US08350372B2

公开(公告)日：2013-01-08

申请号：US13372227

申请日：2012-02-13

申请人： Yukihiro Satou , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi

发明人： Yukihiro Satou , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi

IPC分类号： H01L23/495

CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754

摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

摘要翻译： 本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOS•FET和低边开关的功率MOS•FET串联连接。在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

37.

发明申请
MICROELECTRONIC INTERCONNECT SUBSTRATE AND PACKAGING TECHNIQUES 审中-公开
标题翻译：微电子互连基板和包装技术

公开(公告)号：US20120273963A1

公开(公告)日：2012-11-01

申请号：US13426910

申请日：2012-03-22

申请人： Uri Mirsky , Shimon Neftin , Lev Furer

发明人： Uri Mirsky , Shimon Neftin , Lev Furer

IPC分类号： H01L21/768 , H01L23/48

CPC分类号： H01L23/142 , H01L23/13 , H01L23/3677 , H01L23/3735 , H01L24/45 , H01L24/48 , H01L24/85 , H01L25/0753 , H01L33/62 , H01L33/64 , H01L33/641 , H01L33/642 , H01L33/647 , H01L2224/45 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/85203 , H01L2224/85205 , H01L2924/00014 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01055 , H01L2924/01063 , H01L2924/01078 , H01L2924/09701 , H01L2924/10253 , H01L2924/12041 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H05K1/0206 , H05K3/445 , H05K2201/10106 , H05K2203/0315 , H05K2203/1142 , H01L2224/45099 , H01L2924/00 , H01L2924/00012

摘要： There is provided herein an electrical cross-over comprising: a substrate having an upper surface and a lower surface; an electrically-conductive valve metal area extending from said upper surface to said lower surface; an electrical isolation structure extending from said upper surface to said lower surface and encompassing said electrically conductive area; a first electrically-conductive trace formed on a first electrical isolation area and at least traversing said electrically-conductive crossing area, and at least two second electrically-conductive traces each one of said at least two electrically-conductive traces is at least partially formed on a corresponding second electrical isolation area, wherein said each one of said at least second electrically-conductive traces at least partially extends into said crossing area thereby generating electrical conductivity between said at least two second electrically-conductive traces and said first electrically-conductive trace is electrically isolated from said at least two second electrically-conductive traces.

摘要翻译： 本文提供了一种电交叉，其包括：具有上表面和下表面的基底; 从所述上表面延伸到所述下表面的导电阀金属区域; 电隔离结构，其从所述上表面延伸到所述下表面并且包围所述导电区域; 形成在第一电隔离区域上并且至少穿过所述导电交叉区域的第一导电迹线，以及至少两个第二导电迹线，所述至少两个导电迹线中的每一个至少部分地形成在相应的第二电绝缘区域，其中所述至少第二导电迹线中的每一个至少部分地延伸到所述交叉区域中，从而在所述至少两个第二导电迹线和所述第一导电迹线之间产生电导率与所述至少两个第二导电迹线电隔离。

38.

发明授权
Ultrasonic transducers for wire bonding and methods of forming wire bonds using ultrasonic transducers 有权
标题翻译：用于引线接合的超声换能器和使用超声波换能器形成线接合的方法

公开(公告)号：US08251275B2

公开(公告)日：2012-08-28

申请号：US13388148

申请日：2010-08-10

申请人： Dominick A. DeAngelis , Gary W. Schulze

发明人： Dominick A. DeAngelis , Gary W. Schulze

IPC分类号： B23K1/06 , B23K31/02

CPC分类号： B23K20/007 , B23K2101/42 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/85 , H01L2224/05624 , H01L2224/45147 , H01L2224/48824 , H01L2224/78301 , H01L2224/85203 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H01L2924/20305 , H01L2924/00

摘要： A method of forming a wire bond using a bonding tool coupled to a transducer is provided. The method includes the steps of: (1) applying electrical energy to a driver of the transducer at a first frequency; and (2) applying electrical energy to the driver at a second frequency concurrently with the application of the electrical energy at the first frequency, the first frequency and the second frequency being different from one another.

摘要翻译： 提供了使用耦合到换能器的接合工具形成引线接合的方法。该方法包括以下步骤：（1）以第一频率向换能器的驾驶员施加电能; 和（2）以与第一频率的电能的施加同时以第二频率向驾驶员施加电能，第一频率和第二频率彼此不同。