公开(公告)号：US20120273893A1

公开(公告)日：2012-11-01

申请号：US13548265

申请日：2012-07-13

申请人： Takayuki Hashimoto ,  Nobuyoshi Matsuura ,  Masaki Shiraishi ,  Yukihiro Satou ,  Tetsuya Kawashima

发明人： Takayuki Hashimoto ,  Nobuyoshi Matsuura ,  Masaki Shiraishi ,  Yukihiro Satou ,  Tetsuya Kawashima

IPC分类号： H01L27/088

CPC分类号： H01L25/16 ,  H01L25/074 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4903 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  Y02B70/1466 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.

公开(公告)号：US20120139130A1

公开(公告)日：2012-06-07

申请号：US13372227

申请日：2012-02-13

申请人： Yukihiro Satou ,  Tomoaki Uno ,  Nobuyoshi Matsuura ,  Masaki Shiraishi

发明人： Yukihiro Satou ,  Tomoaki Uno ,  Nobuyoshi Matsuura ,  Masaki Shiraishi

IPC分类号： H01L23/49

CPC分类号： H01L23/5386 ,  H01L23/49575 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/165 ,  H01L29/4175 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/4943 ,  H01L2224/83855 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  H05K7/02 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754

摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

摘要翻译： 本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOS•FET和低边开关的功率MOS•FET串联连接。 在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。 三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

公开(公告)号：US20120014155A1

公开(公告)日：2012-01-19

申请号：US13243642

申请日：2011-09-23

申请人： Takayuki HASHIMOTO ,  Nobuyoshi Matsuura ,  Masaki Shiraishi ,  Yukihiro Satou ,  Tetsuya Kawashima

发明人： Takayuki HASHIMOTO ,  Nobuyoshi Matsuura ,  Masaki Shiraishi ,  Yukihiro Satou ,  Tetsuya Kawashima

IPC分类号： H02M1/00

CPC分类号： H01L25/16 ,  H01L25/074 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4903 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  Y02B70/1466 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.

摘要翻译： 提供能够减小电感的半导体器件。 在其中将整流MOSFET，换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中，整流MOSFET，金属板和换向MOSFET被层压。 主电路的电流从封装的后表面流向其前表面。 金属板通过封装中的布线连接到输出端子。 引线键合用于连接驱动IC，整流MOSFET和换向MOSFET，所有端子都放置在同一平面上。 因此，电感变小，电源损耗和尖峰电压也降低。

公开(公告)号：US20110273154A1

公开(公告)日：2011-11-10

申请号：US13188613

申请日：2011-07-22

申请人： Yukihiro SATOU ,  Tomoaki UNO ,  Nobuyoshi MATSUURA ,  Masaki SHIRAISHI

发明人： Yukihiro SATOU ,  Tomoaki UNO ,  Nobuyoshi MATSUURA ,  Masaki SHIRAISHI

IPC分类号： G05F1/10

CPC分类号： H01L23/5386 ,  H01L23/49575 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/165 ,  H01L29/4175 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/4943 ,  H01L2224/83855 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  H05K7/02 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754

摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS·FET for a high side switch and a power MOS·FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

摘要翻译： 本发明提供一种非绝缘型DC-DC转换器，其具有用于高侧开关的功率MOS·FET和低侧开关的功率MOS·FET串联连接的电路。 在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。 三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

公开(公告)号：US08044468B2

公开(公告)日：2011-10-25

申请号：US12247326

申请日：2008-10-08

申请人： Tomoaki Uno ,  Masaki Shiraishi ,  Nobuyoshi Matsuura ,  Yukihiro Satou

发明人： Tomoaki Uno ,  Masaki Shiraishi ,  Nobuyoshi Matsuura ,  Yukihiro Satou

IPC分类号： H01L23/62

CPC分类号： H01L25/165 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L2224/0603 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49431 ,  H01L2224/49433 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H02M3/1588 ,  H03K17/6871 ,  Y02B70/1466 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： The present invention enhances voltage conversion efficiency of a semiconductor device. In a non-isolated DC-DC converter that includes a high-side switch power MOSFET and a low-side switch power MOSFET, which are series-connected, the high-side switch power MOSFET and driver circuits for driving the high-side and low-side switch power MOSFETs are formed within one semiconductor chip, whereas the low-side switch power MOSFET is formed in another semiconductor chip. The two semiconductor chips are sealed in a single package.

摘要翻译： 本发明提高了半导体器件的电压转换效率。 在一个非隔离DC-DC转换器中，包括串联的高侧开关功率MOSFET和低侧开关功率MOSFET，高侧开关功率MOSFET和驱动电路用于驱动高边和 低侧开关功率MOSFET形成在一个半导体芯片内，而低边开关功率MOSFET则形成在另一个半导体芯片中。 两个半导体芯片被封装在单个封装中。

公开(公告)号：US07554209B2

公开(公告)日：2009-06-30

申请号：US11680758

申请日：2007-03-01

申请人： Yukihiro Satou ,  Tomoaki Uno ,  Nobuyoshi Matsuura ,  Masaki Shiraishi

发明人： Yukihiro Satou ,  Tomoaki Uno ,  Nobuyoshi Matsuura ,  Masaki Shiraishi

IPC分类号： H01L23/48

CPC分类号： H01L23/5386 ,  H01L23/49575 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/165 ,  H01L29/4175 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/4943 ,  H01L2224/83855 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  H05K7/02 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754

摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

摘要翻译： 本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOS.FET和用于低侧开关的功率MOS.FET串联连接。 在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。 三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

公开(公告)号：US20090039394A1

公开(公告)日：2009-02-12

申请号：US12247326

申请日：2008-10-08

申请人： Tomoaki UNO ,  Masaki Shiraishi ,  Nobuyoshi Matsuura ,  Yukihiro Satou

发明人： Tomoaki UNO ,  Masaki Shiraishi ,  Nobuyoshi Matsuura ,  Yukihiro Satou

IPC分类号： H01L29/76

CPC分类号： H01L25/165 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L2224/0603 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49431 ,  H01L2224/49433 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H02M3/1588 ,  H03K17/6871 ,  Y02B70/1466 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： The present invention enhances voltage conversion efficiency of a semiconductor device. In a non-isolated DC-DC converter that includes a high-side switch power MOSFET and a low-side switch power MOSFET, which are series-connected, the high-side switch power MOSFET and driver circuits for driving the high-side and low-side switch power MOSFETs are formed within one semiconductor chip, whereas the low-side switch power MOSFET is formed in another semiconductor chip. The two semiconductor chips are sealed in a single package.

摘要翻译： 本发明提高了半导体器件的电压转换效率。 在一个非隔离DC-DC转换器中，包括串联的高侧开关功率MOSFET和低侧开关功率MOSFET，高侧开关功率MOSFET和驱动电路用于驱动高边和 低侧开关功率MOSFET形成在一个半导体芯片内，而低边开关功率MOSFET则形成在另一个半导体芯片中。 两个半导体芯片被封装在单个封装中。

公开(公告)号：US07480163B2

公开(公告)日：2009-01-20

申请号：US11585226

申请日：2006-10-24

申请人： Takayuki Hashimoto ,  Nobuyoshi Matsuura ,  Masaki Shiraishi ,  Yukihiro Satou ,  Tetsuya Kawashima

发明人： Takayuki Hashimoto ,  Nobuyoshi Matsuura ,  Masaki Shiraishi ,  Yukihiro Satou ,  Tetsuya Kawashima

IPC分类号： H02M1/00

CPC分类号： H01L25/16 ,  H01L25/074 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4903 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  Y02B70/1466 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.

摘要翻译： 提供能够减小电感的半导体器件。 在其中将整流MOSFET，换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中，整流MOSFET，金属板和换向MOSFET被层压。 主电路的电流从封装的后表面流向其前表面。 金属板通过封装中的布线连接到输出端子。 引线键合用于连接驱动IC，整流MOSFET和换向MOSFET，所有端子都放置在同一平面上。 因此，电感变小，电源损耗和尖峰电压也降低。

公开(公告)号：US20060226532A1

公开(公告)日：2006-10-12

申请号：US11450333

申请日：2006-06-12

申请人： Yukihiro Satou ,  Toshiyuki Hata

发明人： Yukihiro Satou ,  Toshiyuki Hata

IPC分类号： H01L23/52

CPC分类号： H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

公开(公告)号：US08044509B2

公开(公告)日：2011-10-25

申请号：US12982432

申请日：2010-12-30

申请人： Hajime Hasebe ,  Tadatoshi Danno ,  Yukihiro Satou

发明人： Hajime Hasebe ,  Tadatoshi Danno ,  Yukihiro Satou

IPC分类号： H01L23/04 ,  H01L23/495 ,  H01L23/48 ,  H01L23/52 ,  H01L23/29

CPC分类号： H01L23/49503 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/49 ,  H01L23/4952 ,  H01L23/49548 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29339 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48257 ,  H01L2224/484 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83101 ,  H01L2224/83385 ,  H01L2224/85439 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/15151 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T29/49121 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05599

摘要： In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.