公开(公告)号：US08138600B2

公开(公告)日：2012-03-20

申请号：US11776393

申请日：2007-07-11

申请人： Akira Muto ,  Ichio Shimizu ,  Tetsuo Iljima ,  Toshiyuki Hata ,  Katsuo Ishizaka

发明人： Akira Muto ,  Ichio Shimizu ,  Tetsuo Iljima ,  Toshiyuki Hata ,  Katsuo Ishizaka

IPC分类号： H01L23/34

CPC分类号： H01L23/49562 ,  H01L21/565 ,  H01L23/49524 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device is provided, which is capable of improving mounting flexibility relatively and increasing general versatility, as well as realizing heat radiation characteristics and low on-resistance. Moreover, the semiconductor device is provided, which is capable of improving reliability, performing processing in manufacturing processes easily and reducing manufacturing costs. Also, the semiconductor device capable of decreasing the mounting area is provided. A semiconductor chip in which an IGBT is formed and a semiconductor chip in which a diode is formed are mounted over a die pad. Then, the semiconductor chip and the semiconductor chip are connected by using a clip. The clip is arranged so as not to overlap with bonding pads formed at the semiconductor chip in a flat state. The bonding pads formed at the semiconductor chip are connected to electrodes by using wires.

摘要翻译： 提供了一种半导体器件，其能够相对地提高安装灵活性并增加通用性，并且实现热辐射特性和低导通电阻。 此外，提供了能够提高可靠性，容易地进行制造工艺的处理并降低制造成本的半导体器件。 此外，还提供了能够减小安装面积的半导体器件。 其中形成IGBT的半导体芯片和其中形成有二极管的半导体芯片安装在管芯焊盘上。 然后，使用夹子连接半导体芯片和半导体芯片。 夹子被布置成不与形成在半导体芯片处的平坦状态的接合焊盘重叠。 通过使用导线将形成在半导体芯片上的接合焊盘连接到电极。

公开(公告)号：US20100171743A1

公开(公告)日：2010-07-08

申请号：US12676535

申请日：2008-09-03

申请人： Toshiyuki Hata

发明人： Toshiyuki Hata

IPC分类号： G06T11/20 ,  H04R9/08

CPC分类号： H04R5/027 ,  H04R1/406 ,  H04R3/005 ,  H04R2201/403

摘要： A sound pickup apparatus capable of submitting an optimum sound pickup environment to the user in a more easily understandable manner is implemented. A sound output-pickup function apparatus 1 is placed at a predetermined position and connected to a PC 2 by a USB cable 300. When a user 900 operates a sound output-pickup function apparatus 1, to thus launch a sound output-pickup application, the sound output-pickup function apparatus 1 detects a turn amount of each of sub-housings 11, 12 and delivers the detected turn amounts to the PC 2. The PC 2 calculates a positional relationship between the main housing 10 and the sub-housings 11 and 12 from the acquired turn amounts, thereby determining a usage mode exhibiting the same positional relationship. When determined that an equivalent usage mode is available, the PC 2 displays an indicator display including the shape of the sound output-pickup function apparatus 1, the number of persons, person's positions, and a sound pickup range, all conforming to the equivalent usage mode. The user 900 ascertains an optimum number of persons and optimum person's positions by taking a look at the indicator display.

摘要翻译： 实现能够以更容易理解的方式向用户提供最佳声音拾取环境的拾音装置。 声音输出拾取功能装置1放置在预定位置并通过USB电缆300连接到PC 2.当用户900操作声音输出拾取功能装置1，从而发出声音输出拾取应用时， 声音输出拾取功能装置1检测每个子壳体11,12的转动量，并将检测到的转动量传送到PC 2.PC2计算主壳体10和副壳体11之间的位置关系 和12，从而确定呈现相同位置关系的使用模式。 当确定等效使用模式可用时，PC 2显示包括声音输出拾取功能装置1的形状，人数，人物位置和声音拾取范围的指示符显示，全部符合等效使用 模式。 用户900通过观察指示符显示来确定最佳人数和最佳人员的位置。

公开(公告)号：US07432594B2

公开(公告)日：2008-10-07

申请号：US11173740

申请日：2005-06-30

申请人： Kisho Ashida ,  Akira Muto ,  Ichio Shimizu ,  Toshiyuki Hata ,  Kenya Kawano ,  Naotaka Tanaka ,  Nae Hisano

发明人： Kisho Ashida ,  Akira Muto ,  Ichio Shimizu ,  Toshiyuki Hata ,  Kenya Kawano ,  Naotaka Tanaka ,  Nae Hisano

IPC分类号： H01L23/52 ,  H01L29/40

CPC分类号： H01L24/40 ,  H01L21/566 ,  H01L23/49562 ,  H01L24/37 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first and second electrically conductive members covering the first and second electrode surfaces respectively as seen in the thickness direction to be electrically connected to the first and second electrode surfaces respectively.

摘要翻译： 半导体器件具有包括在半导体芯片的厚度方向上彼此相对的第一和第二表面的半导体芯片，其中第一和第二表面分别包括第一和第二电极表面，第一和第二导电构件覆盖第一和第二表面 第二电极表面分别在厚度方向上看到以分别电连接到第一和第二电极表面。

公开(公告)号：US07394146B2

公开(公告)日：2008-07-01

申请号：US11589849

申请日：2006-10-31

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495 ,  H01L21/00 ,  H01R9/00

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

公开(公告)号：US07385279B2

公开(公告)日：2008-06-10

申请号：US11642523

申请日：2006-12-21

申请人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

发明人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

IPC分类号： H01L23/495 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L21/561 ,  H01L21/565 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05624 ,  H01L2224/05099 ,  H01L2924/00012

摘要： A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET (70) has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant (29), a plurality of outer leads (37), (38) protruding in parallel from the same lateral surface of the resin encapsulant (29) and a header (28) bonded to a back surface of the semiconductor pellet and having a header protruding portion (28c) protruding from a lateral surface of the resin encapsulant (29) opposite to the lateral surface from which the outer leads protrude, wherein the header (28) has an exposed surface (28b) exposed from the resin encapsulant (29); the outer leads (37), (38) are bent; and the exposed of the outer leads (37), (38) are provided at substantially the same height.

摘要翻译： 具有高输出并且具有降低的外部电阻的半导体器件和方法被降低并且改善了辐射性能。 MOSFET（70）具有用于电连接半导体芯片的表面电极和多个内部引线的连接部分，树脂密封剂（29），与外部引线平行突出的多个外部引线（37），（38） 树脂密封剂（29）的相同的侧表面和接合到半导体芯片的后表面的集管（28），并且具有从树脂密封剂（29）的与该树脂密封剂相对的侧表面突出的集管突出部分 外引线突出的侧表面，其中集管（28）具有从树脂密封剂（29）暴露的暴露表面（28b）; 外引线（37），（38）弯曲; 并且暴露的外引线（37），（38）设置在基本相同的高度。

公开(公告)号：US07332757B2

公开(公告)日：2008-02-19

申请号：US11415291

申请日：2006-05-02

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L29/94 ,  H01L21/00 ,  H01R9/00

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

公开(公告)号：US07319493B2

公开(公告)日：2008-01-15

申请号：US10805572

申请日：2004-03-19

申请人： Toshiyuki Hata ,  Hiroyuki Iwase

发明人： Toshiyuki Hata ,  Hiroyuki Iwase

IPC分类号： H04N5/222 ,  H04N9/74

CPC分类号： H04N5/265

摘要： A video signal processing apparatus 1 and a video processing parameter setting apparatus 2 comprise a video processing apparatus (visual mixer). A parameter value collectively specifying portion 3 specifies in accordance with the order stored in an arpeggiator pattern memory 7, sets of scene data which collectively specify values of a plurality of parameters stored in a scene data memory 6. A changing process portion 4 changes in a given length of time, the values of video processing parameters from the values currently set on the video signal processing apparatus 1 to the parameter values collectively specified as a set of scene data. The changing process is started at a timing corresponding to a change time and completed at a subsequent switch timing. As a result, the video processing apparatus allows for collective specification of parameters with simple operations and smooth switching between video images at the changing of parameter values.

摘要翻译： 视频信号处理装置1和视频处理参数设定装置2包括视频处理装置（视频混合器）。 参数值共同指定部分3根据存储在琶音器模式存储器7中的顺序指定集合指定存储在场景数据存储器6中的多个参数的值的场景数据集合。 改变处理部分4在给定的时间长度上改变视频处理参数的值，从视频信号处理设备1上当前设置的值到共同指定为一组场景数据的参数值。 改变过程在对应于改变时间的定时开始，并且在随后的切换定时完成。 结果，视频处理装置允许通过简单的操作对参数进行集体规范，并且在参数值的改变时允许视频图像之间的平滑切换。

公开(公告)号：US20070040249A1

公开(公告)日：2007-02-22

申请号：US11589849

申请日：2006-10-31

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

公开(公告)号：US07173333B2

公开(公告)日：2007-02-06

申请号：US10972410

申请日：2004-10-26

申请人： Toshiyuki Hata ,  Takamitsu Kanazawa ,  Takeshi Otani

发明人： Toshiyuki Hata ,  Takamitsu Kanazawa ,  Takeshi Otani

IPC分类号： H01L23/34 ,  H01L23/495 ,  H01L29/80 ,  H01L31/0328

CPC分类号： H01L24/06 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.

摘要翻译： 半导体器件包括：封装; 在封装中彼此相邻的两个半导体芯片固定部件; 以及第一和第二半导体芯片，每个半导体芯片固定在半导体芯片固定部分上，并且其中形成有场效应晶体管。 栅极引线G 1，源极引线S1和漏极引线D 2从封装的第一表面上从左到右布置，漏极引线D1，源极引线S2和栅极引线G2 在第二表面上从左到右排列。 源极引线S1和漏极引线D2之间的间隙是栅极引线G 1和源极引线S 1之间的间隙的两倍，并且漏极引线D 1与源极引线S 2之间的间隙是两倍 源极引线S2和栅极引线G 2之间的间隙。

公开(公告)号：US20060226532A1

公开(公告)日：2006-10-12

申请号：US11450333

申请日：2006-06-12

申请人： Yukihiro Satou ,  Toshiyuki Hata

发明人： Yukihiro Satou ,  Toshiyuki Hata

IPC分类号： H01L23/52

CPC分类号： H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.