Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11776393Application Date: 2007-07-11
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Publication No.: US08138600B2Publication Date: 2012-03-20
- Inventor: Akira Muto , Ichio Shimizu , Tetsuo Iljima , Toshiyuki Hata , Katsuo Ishizaka
- Applicant: Akira Muto , Ichio Shimizu , Tetsuo Iljima , Toshiyuki Hata , Katsuo Ishizaka
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-191830 20060712
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
A semiconductor device is provided, which is capable of improving mounting flexibility relatively and increasing general versatility, as well as realizing heat radiation characteristics and low on-resistance. Moreover, the semiconductor device is provided, which is capable of improving reliability, performing processing in manufacturing processes easily and reducing manufacturing costs. Also, the semiconductor device capable of decreasing the mounting area is provided. A semiconductor chip in which an IGBT is formed and a semiconductor chip in which a diode is formed are mounted over a die pad. Then, the semiconductor chip and the semiconductor chip are connected by using a clip. The clip is arranged so as not to overlap with bonding pads formed at the semiconductor chip in a flat state. The bonding pads formed at the semiconductor chip are connected to electrodes by using wires.
Public/Granted literature
- US20080012045A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-01-17
Information query
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