公开(公告)号：US20080067377A1

公开(公告)日：2008-03-20

申请号：US11760235

申请日：2007-06-08

Applicant: Masahiro Hatakeyama ,  Takeshi Murakami ,  Nobuharu Noji ,  Mamoru Nakasuji ,  Hirosi Sobukawa ,  Satoshi Mori ,  Tsutomu Karimata

Inventor： Masahiro Hatakeyama ,  Takeshi Murakami ,  Nobuharu Noji ,  Mamoru Nakasuji ,  Hirosi Sobukawa ,  Satoshi Mori ,  Tsutomu Karimata

IPC: G21K7/00

CPC classification number: H01J37/153 ,  H01J37/065 ,  H01J2237/061 ,  H01J2237/06375 ,  H01J2237/083 ,  H01J2237/1534 ,  H01J2237/24592 ,  H01J2237/28

Abstract: An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a 1/4 plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.

Abstract translation: 一种用于提供诸如半导体晶片的样品的评估的电子束装置，其包括具有不大于0.1μm的最小线宽的微量图案，具有高生产量。 由电子枪产生的一次电子束照射在样品上，从样品发出的二次电子通过图像投影光学系统形成检测器上的图像。 电子枪61具有阴极1和拉伸电极3，阴极的电子发射表面1a限定凹面。 拉制电极3具有由面对阴极的电子发射表面1a的第二球体的部分外表面和由电子通过凸面形成的孔73构成的凸面3a。 像差校正光学装置包括两个相同大小的多极维恩滤波器，其布置成使得它们的中心分别与像差校正光学中的物平面图像平面段的1/4平面位置和¾平面位置对准 装置和具有分别设置在像差校正光学装置中的物平面位置，中间图像形成平面位置和图像平面位置的双向焦点的光学元件。

公开(公告)号：US20070108395A1

公开(公告)日：2007-05-17

申请号：US11647719

申请日：2006-12-29

Applicant: Thomas Horsky ,  Robert Milgate ,  George Sacco ,  Dale Jacobson ,  Wade Krull

Inventor： Thomas Horsky ,  Robert Milgate ,  George Sacco ,  Dale Jacobson ,  Wade Krull

IPC: B01D59/44

CPC classification number: H01J37/08 ,  C23C14/48 ,  C23C14/564 ,  H01J9/38 ,  H01J27/024 ,  H01J37/3171 ,  H01J2209/017 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/0812 ,  H01J2237/083 ,  H01J2237/31701 ,  H01L21/265

Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

Abstract translation: 为离子束产生系统的提取电极提供热控制，其防止沉积物的形成和不稳定的操作，并且能够与可冷凝蒸气和能够冷热操作的离子源产生的离子一起使用。 提取电极的电加热用于提取十硼烷或十八硼烷离子。 使用热离子源时的主动冷却可防止电极破坏，从而使引出电极具有导热和防氟的铝组成。 通过使用反应性卤素气体对离子源和引出电极进行原位蚀刻清洗，并且具有延长清洗之间的使用持续时间的特征，包括准确的蒸汽流量控制和精确的聚焦，增强了系统的使用寿命 离子束光学。 远程等离子体源将F或Cl离子输送到去激活离子源，以清除离子源和提取电极中的沉积物。 这些技术使得在运行可冷凝的进料气体如升华蒸汽时长的设备正常运行时间，并且特别适用于所谓的冷离子源和通用离子源。 描述了使用十硼烷和十八硼烷作为原料的长设备正常运行时间，以及当使用蒸发的元素砷和磷时，并且用于提高离子注入期间的束稳定性的方法和装置。

公开(公告)号：US07049610B2

公开(公告)日：2006-05-23

申请号：US10885665

申请日：2004-07-08

Applicant: Masato Muraki ,  Haruo Yoda

Inventor： Masato Muraki ,  Haruo Yoda

IPC: H01J37/305

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0435 ,  H01J2237/083 ,  H01J2237/30477

Abstract: In a charged particle beam exposure method of applying/not applying charged particle beams to expose a substrate by deflecting the charged particle beams to move the charged particle beams on a blanking aperture stop, the size of the charged particle beams on the blanking aperture stop is made larger than the size of the blanking aperture stop.

Abstract translation: 在通过使带电粒子束偏转以使带电粒子束移动到消隐孔径光阑上而施加/不施加带电粒子束以暴露衬底的带电粒子束曝光方法中，消隐孔径光阑上的带电粒子束的尺寸为 制成大于冲孔孔径的尺寸。

公开(公告)号：US20030205680A1

公开(公告)日：2003-11-06

申请号：US10209397

申请日：2002-07-31

Inventor： Victor M. Benveniste ,  William F. DiVergilio

IPC: H01J027/16

CPC classification number: H01J37/08 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.

Abstract translation: 公开了一种具有用于提供用于离子注入系统的带状离子束的细长狭缝的离子源。 源包括用于在圆柱形源壳体内等离子体的RF激发的同轴电感耦合天线，以及设置在壳体内的周向磁体，用于产生用于等离子体限制的方位多点的磁场。 还公开了一种用于壳体内部的衬垫，其在等离子体和外部壳体壁之间提供热障碍，以便减轻或减少等离子体限制室内的冷凝。

公开(公告)号：US06538255B1

公开(公告)日：2003-03-25

申请号：US09510581

申请日：2000-02-22

Applicant: Mamoru Nakasuji

Inventor： Mamoru Nakasuji

IPC: H01J37065

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/065 ,  H01J37/3174 ,  H01J2237/083 ,  H01J2237/24507 ,  H01J2237/24514

Abstract: Electron guns, and electron-beam optical systems including same, are disclosed that allow adjustment and attainment of a uniform transverse beam-intensity distribution in an electron beam. Such electron guns and systems are especially useful in electron-beam microlithography apparatus and methods. A representative electron gun includes a cathode having an electron-emitting surface, an anode for drawing electrons away from the cathode, and a filament array for applying electrical energy to a rear (upstream-facing) surface of the cathode. The filament array includes multiple independently controllable filaments.

Abstract translation: 公开了电子枪和包括它们的电子束光学系统，其允许在电子束中调节和获得均匀的横向光束强度分布。 这种电子枪和系统在电子束微光刻设备和方法中特别有用。 代表性的电子枪包括具有电子发射表面的阴极，用于从阴极吸引电子的阳极和用于向阴极的后面（上游侧）表面施加电能的灯丝阵列。 细丝阵列包括多个可独立控制的细丝。

公开(公告)号：US5811823A

公开(公告)日：1998-09-22

申请号：US757726

申请日：1996-11-26

Applicant: Julian G. Blake ,  Piero Sferlazzo ,  Peter H. Rose ,  Adam A. Brailove

Inventor： Julian G. Blake ,  Piero Sferlazzo ,  Peter H. Rose ,  Adam A. Brailove

IPC: H01J37/04 ,  C23C14/48 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265 ,  H01L21/677 ,  H01L21/683

CPC classification number: H01L21/67109 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/67069 ,  H01L21/67739 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/67778 ,  H01L21/6838 ,  H01J2237/022 ,  H01J2237/083 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.

Abstract translation: 快速有效地处理大量平板显示器的高通量离子注入系统。 离子注入系统具有离子源，电极组件，安装工件的平台和离子束测量结构。 与电极组件结合的离子源形成带状束形状的离子束。 离子束的形成和定向使得离子束的第一部分处理工件，而离子束的第二部分由束测量结构同时测量。 控制器从离子束参数获取束测量结构的数据，然后根据数据产生离子注入系统的控制信号。

公开(公告)号：US12119203B2

公开(公告)日：2024-10-15

申请号：US17739830

申请日：2022-05-09

Applicant: CANON ANELVA CORPORATION

Inventor： Yasushi Yasumatsu ,  Naoyuki Okamoto ,  Masashi Tsujiyama ,  Fumihito Suzuki

IPC: H01J37/30 ,  B08B3/08 ,  H01J27/02 ,  H01J37/063 ,  H01J37/08 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/3053 ,  B08B3/08 ,  H01J27/024 ,  H01J37/063 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/3151

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

公开(公告)号：US20230260749A1

公开(公告)日：2023-08-17

申请号：US18159177

申请日：2023-01-25

Applicant: NuFlare Technology, Inc.

Inventor： Hirofumi MORITA

IPC: H01J37/317

CPC classification number: H01J37/3177 ,  H01J2237/24578 ,  H01J2237/30488 ,  H01J2237/083 ,  H01J2237/0437 ,  H01J2237/31762

Abstract: A multi charged particle beam apparatus irradiates a substrate placed on a stage with a multi charged particle beam through an illumination optical system including a plurality of components, and an objective lens successively. In one embodiment, an optical system adjustment method for the multi charged particle beam apparatus includes measuring positional deviation amounts of a plurality of individual beams included in the multi charged particle beam at two or more different heights in an optical axis direction of a measurement surface or an imaging position of the multi charged particle beam, calculating a normalized position difference based on the two or more heights and the positional deviation amounts, the normalized position difference being an illumination system aberration equivalent amount of the illumination optical system, and adjusting a set value for at least one of the plurality of components using a value of the normalized position difference.

公开(公告)号：US20230197401A1

公开(公告)日：2023-06-22

申请号：US18083630

申请日：2022-12-19

Applicant: JEOL Ltd.

Inventor： Munehiro Kozuka

IPC: H01J37/21 ,  H01J37/305

CPC classification number: H01J37/21 ,  H01J37/305 ,  H01J2237/083 ,  H01J2237/20214 ,  H01J2237/24578 ,  H01J2237/30477 ,  H01J2237/31749

Abstract: Provided is a sample milling apparatus capable of milling various samples efficiently. The sample milling apparatus includes an anode, a cathode for emitting electrons which are made to collide with gas molecules so that ions are generated, an extraction electrode for causing the generated ions to be extracted as an ion beam, and a focusing electrode disposed between the cathode and the extraction electrode and applied with a focusing voltage. The spatial profile of the ion beam is controlled by varying the focusing voltage applied to the focusing electrode.

公开(公告)号：US09799484B2

公开(公告)日：2017-10-24

申请号：US14964221

申请日：2015-12-09

Applicant: Hermes Microvision Inc.

Inventor： Shuai Li

IPC: H01J37/143 ,  H01J37/28 ,  H01J3/20 ,  H01J37/09

CPC classification number: H01J37/143 ,  H01J3/20 ,  H01J37/063 ,  H01J37/065 ,  H01J37/09 ,  H01J37/14 ,  H01J37/28 ,  H01J2237/0453 ,  H01J2237/063 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/0653 ,  H01J2237/083 ,  H01J2237/141 ,  H01J2237/1415 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: This invention provides a charged particle source, which comprises an emitter and means of generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.