公开(公告)号：US20170338114A1

公开(公告)日：2017-11-23

申请号：US15534080

申请日：2015-11-27

Applicant: Tokyo Electron Limited

Inventor： Ji Hyun Choi ,  Young Don Chang

IPC: H01L21/033 ,  H01L21/02 ,  H01J37/305 ,  H01L21/66 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01J37/3053 ,  H01J2237/0812 ,  H01J2237/202 ,  H01L21/0228 ,  H01L21/0335 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31116 ,  H01L22/12

Abstract: A mask pattern is formed on a substrate. A first spacer film is formed on the mask pattern. The first spacer film is etched by irradiating the substrate with a gas cluster ion beam (GCIB). A first spacer pattern is formed on the substrate by removing the mask pattern. A second spacer film is formed on the first spacer pattern. The second spacer film is etched. A second spacer pattern is formed on the substrate by removing the first spacer pattern. The substrate is etched using the second spacer pattern as a mask.

公开(公告)号：US09799488B2

公开(公告)日：2017-10-24

申请号：US14571533

申请日：2014-12-16

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/08 ,  H01J37/147

CPC classification number: H01J37/3171 ,  C03C23/005 ,  C03C2204/08 ,  H01J37/05 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/15 ,  H01J2237/31701 ,  H01L21/02115 ,  H01L21/02238 ,  H01L21/02274 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32115 ,  H01L29/36 ,  H01M4/04 ,  H01M10/04 ,  H01M10/0585 ,  H01M2004/021 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

Abstract: A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or increase surface area.

公开(公告)号：US20160172197A1

公开(公告)日：2016-06-16

申请号：US15047553

申请日：2016-02-18

Applicant: Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

IPC: H01L21/265 ,  H01L29/167

CPC classification number: H01L21/2652 ,  C03C23/005 ,  C03C2204/08 ,  H01J37/05 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/15 ,  H01J2237/31701 ,  H01L21/02115 ,  H01L21/02238 ,  H01L21/02274 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/324 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

Abstract: A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.

Abstract translation: 用于处理硅衬底和硅衬底的方法提供用加速中性束处理的表面。

公开(公告)号：US09336307B2

公开(公告)日：2016-05-10

申请号：US13774744

申请日：2013-02-22

Applicant: Zaxcom, Inc.

Inventor： Glenn Norman Sanders ,  Howard Glenn Stark

IPC: H04H60/09 ,  H04H20/71 ,  H04H40/00 ,  H04M11/10 ,  G06F17/30 ,  A61F2/30 ,  B29C59/16 ,  D06M10/00 ,  D06M10/04 ,  A61B17/00 ,  A61F2/00 ,  B29C35/08

CPC classification number: G06F17/3074 ,  A61B2017/00969 ,  A61F2/0077 ,  A61F2/30767 ,  B29C59/16 ,  B29C2035/0872 ,  D06M10/00 ,  D06M10/008 ,  D06M10/04 ,  G08C25/02 ,  H01J2237/0812 ,  H01J2237/2505 ,  Y10T442/60

Abstract: Disclosed are systems and methods for wirelessly recording multi-track audio files without the data corruption or loss of data that typically occurs with wireless data transmission. In some aspects of the present invention, each performer is equipped with a local audio device capable of locally recording the respective performer's audio while also transmitting it to a master recorder. The locally recorded audio may then be used to repair or replace any audio lost or corrupted during transmission to the master recorder. Such repair or replacement may be performed electronically or via playback of the locally recorded audio. In other aspects of the present invention, a master recorder is not required since all locally recorded audio may be combined or otherwise processed post-recording. Locally recorded audio may include identifiers to aid in post-recording identification of such audio. A multi-memory unit is also provided to facilitate manipulation and processing of audio files.

公开(公告)号：US20160111262A1

公开(公告)日：2016-04-21

申请号：US14893775

申请日：2014-05-26

Applicant: AYABO CORPORATION ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Atsushi Nakajima ,  Hironori Tsunoyama ,  Chuhang Zhang ,  Hiroki Akatsuka ,  Keizo Tsukamoto

IPC: H01J37/34 ,  C23C14/14 ,  C23C14/34 ,  H01J37/32 ,  C23C14/35

CPC classification number: H01J37/3405 ,  C23C14/14 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/08 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3467 ,  H01J2237/081 ,  H01J2237/0812

Abstract: Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell.

Abstract translation: 使用纳米簇生产装置改善纳米簇的尺寸和结构的控制。 希望增加获得的量和具有尺寸和结构的纳米簇的产量，其中至少一个被选择。 纳米簇生产装置具有真空室，通过脉冲放电产生等离子体的溅射源，向溅射源供给脉冲功率的脉冲电源，向溅射源供给第一惰性气体的第一惰性气体供给装置， 存储在真空室中的簇生长池和将第二惰性气体引入聚集体生长池中的第二惰性气体引入装置。

公开(公告)号：US20160086758A1

公开(公告)日：2016-03-24

申请号：US14888078

申请日：2014-04-18

Applicant: CANON KABUSHIKI KAISHA

Inventor： Kota Iwasaki

IPC: H01J27/02 ,  H01J37/18 ,  H01J49/26 ,  B05B17/06 ,  B05B15/02 ,  H01J49/14 ,  H01J27/20

CPC classification number: H01J27/026 ,  B05B15/50 ,  B05B17/06 ,  H01J27/02 ,  H01J27/205 ,  H01J37/08 ,  H01J37/18 ,  H01J49/147 ,  H01J49/26 ,  H01J2237/0812 ,  H01J2237/182

Abstract: In the known liquid droplet injecting apparatus, when a tube and a nozzle are heated in order to prevent deposition of a solid source material of liquid droplets, the efficiency of injection of liquid droplets into a vacuum vessel is decreased by evaporation of the liquid droplets. The present invention provides a liquid droplet injecting apparatus capable of efficiently injecting liquid droplets into a vacuum vessel. The liquid droplet injecting apparatus includes a liquid container which holds a liquid and whose inside pressure can be adjusted, a liquid droplet generating unit configured to generate liquid droplets from the liquid held in the liquid container, a nozzle which injects the liquid droplets generated in the liquid container, a connecting tube which connects the nozzle and the liquid container, and a first heating unit configured to heat at least one of the connecting tube and the nozzle.

Abstract translation: 在已知的液滴注入装置中，为了防止液滴的固体源材料的沉积而加热管和喷嘴时，通过液滴的蒸发而使液滴注入真空容器的效率降低。 本发明提供一种能够有效地将液滴注入真空容器的液滴注入装置。 液滴喷射装置包括：液体容器，其保持液体并且可以调节其内部压力;液滴产生单元，被配置为从保持在液体容器中的液体产生液滴;喷嘴，喷射在液体容器中产生的液滴; 液体容器，连接喷嘴和液体容器的连接管，以及构造成加热连接管和喷嘴中的至少一个的第一加热单元。

公开(公告)号：US20160071723A1

公开(公告)日：2016-03-10

申请号：US14937968

申请日：2015-11-11

Applicant: International Business Machines Corporation

Inventor： Oleg Gluschenkov ,  Ahmet S. Ozcan

IPC: H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/02057 ,  C23C14/02 ,  C23C16/0236 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/4582 ,  C23C16/486 ,  C23C16/52 ,  H01J37/30 ,  H01J37/3002 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/32449 ,  H01J2237/0812 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/334 ,  H01L21/02068 ,  H01L21/28506 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28575 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/67028

Abstract: A method of performing in-situ cleaning of a substrate includes inserting a gas cluster ion beam into a processing chamber containing a substrate, the gas cluster ion beam includes a broad gas cluster ion bean that reaches an entire surface of the substrate. The entire surface of the substrate becomes substantially uniform after an exposure to the gas cluster ion beam.

Abstract translation: 对基板进行原位清洗的方法包括将气体簇离子束插入到含有基板的处理室中，气体簇离子束包括到达基板的整个表面的宽气体簇离子束。 在暴露于气体簇离子束之后，基板的整个表面变得基本均匀。

公开(公告)号：US20150376791A1

公开(公告)日：2015-12-31

申请号：US14831900

申请日：2015-08-21

Applicant: International Business Machines Corporation

Inventor： Oleg Gluschenkov ,  Ahmet S. Ozcan

IPC: C23C16/48 ,  C23C16/52 ,  C23C16/42 ,  H01J37/305 ,  H01J37/30 ,  H01L21/67 ,  C23C16/452 ,  C23C16/458

CPC classification number: H01L21/02057 ,  C23C14/02 ,  C23C16/0236 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/4582 ,  C23C16/486 ,  C23C16/52 ,  H01J37/30 ,  H01J37/3002 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/32449 ,  H01J2237/0812 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/334 ,  H01L21/02068 ,  H01L21/28506 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28575 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/67028

Abstract: A method of forming a low temperature silicide film on a substrate includes supplying a source gas to a cluster formation chamber to form a gas cluster that is subsequently moved to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB). The GCIB is injected into a processing chamber containing the substrate. A precursor gas is injected through an injection device located on a top portion of the processing chamber to form a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas.

公开(公告)号：US20150206732A1

公开(公告)日：2015-07-23

申请号：US14600338

申请日：2015-01-20

Applicant: ULVAC-PHI, Inc.

Inventor： Daisuke SAKAI ,  Mauo SOGOU ,  Kenzo HIRAOKA

IPC: H01J49/16 ,  H01J49/06 ,  G01N23/02 ,  H01J49/26

CPC classification number: G01N23/02 ,  G01N23/2258 ,  H01J27/26 ,  H01J37/08 ,  H01J37/252 ,  H01J49/0468 ,  H01J49/165 ,  H01J2237/0812 ,  H01J2237/2527 ,  H01J2237/3174

Abstract: Provided are an ion source, an ion gun, and an analysis instrument, which are capable of performing sputtering without damage to a surface of a sample and improving detection sensitivity in mass spectroscopy. In the ion source, an emission opening to which ionization liquid is supplied is disposed in an electric field formed in vacuum environment by an extracting electrode so that super large droplet cluster ions are generated from the emission opening. When the sample is irradiated with a super large droplet cluster ion beam, the sample surface is subjected to sputtering without damage, so as to remove contamination substances or to expose a new surface of the sample. In mass spectroscopy, detection sensitivity is improved.

Abstract translation: 提供离子源，离子枪和分析仪器，其能够进行溅射而不损害样品的表面并提高质谱中的检测灵敏度。 在离子源中，在真空环境中由提取电极形成的电场中配置有供给电离液体的发射开口，从而从发射开口产生超大的液滴簇离子。 当用超大液滴簇离子束照射样品时，样品表面经受溅射而不损坏，以便去除污染物质或露出样品的新表面。 在质谱中，检测灵敏度得到改善。

公开(公告)号：US08741771B2

公开(公告)日：2014-06-03

申请号：US12142094

申请日：2008-06-19

Applicant: Jeffrey P. Gambino ,  Anthony K. Stamper

Inventor： Jeffrey P. Gambino ,  Anthony K. Stamper

IPC: H01L21/4763

CPC classification number: H01L21/7684 ,  H01J2237/0812 ,  H01L21/32115 ,  H01L21/32136 ,  Y10S438/961

Abstract: A damascene process incorporating a GCIB step is provided. The GCIB step can replace one or more CMP steps in the traditional damascene process. The GCIB step allows for selectable removal of unwanted material and thus, reduces unwanted erosion of certain nearby structures during damascene process. A GCIB step may also be incorporated in the damascene process as a final polish step to clean up surfaces that have been planarized using a CMP step.

Abstract translation: 提供了一个结合GCIB步骤的镶嵌工艺。 GCIB步骤可以替代传统镶嵌工艺中的一个或多个CMP步骤。 GCIB步骤允许选择性地去除不想要的材料，并因此减少镶嵌过程中某些附近结构的不必要的侵蚀。 GCIB步骤也可以作为最后抛光步骤结合在镶嵌工艺中，以清理已经使用CMP步骤进行平面化的表面。