Invention Application
- Patent Title: PATTERN FORMING METHOD, GAS CLUSTER ION BEAM IRRADIATING DEVICE AND PATTERN FORMING APPARATUS
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Application No.: US15534080Application Date: 2015-11-27
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Publication No.: US20170338114A1Publication Date: 2017-11-23
- Inventor: Ji Hyun Choi , Young Don Chang
- Applicant: Tokyo Electron Limited
- Priority: JP2014-249364 20141209
- International Application: PCT/JP2015/083436 WO 20151127
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/02 ; H01J37/305 ; H01L21/66 ; H01L21/311
Abstract:
A mask pattern is formed on a substrate. A first spacer film is formed on the mask pattern. The first spacer film is etched by irradiating the substrate with a gas cluster ion beam (GCIB). A first spacer pattern is formed on the substrate by removing the mask pattern. A second spacer film is formed on the first spacer pattern. The second spacer film is etched. A second spacer pattern is formed on the substrate by removing the first spacer pattern. The substrate is etched using the second spacer pattern as a mask.
Information query
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