Invention Application
- Patent Title: GAS CLUSTER REACTOR FOR ANISOTROPIC FILM GROWTH
- Patent Title (中): 用于各向异性膜生长的气体聚集反应器
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Application No.: US14937968Application Date: 2015-11-11
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Publication No.: US20160071723A1Publication Date: 2016-03-10
- Inventor: Oleg Gluschenkov , Ahmet S. Ozcan
- Applicant: International Business Machines Corporation
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3065
Abstract:
A method of performing in-situ cleaning of a substrate includes inserting a gas cluster ion beam into a processing chamber containing a substrate, the gas cluster ion beam includes a broad gas cluster ion bean that reaches an entire surface of the substrate. The entire surface of the substrate becomes substantially uniform after an exposure to the gas cluster ion beam.
Information query
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