摘要:
A manufacturing method of an image display apparatus having a substrate and a conductive supporting frame formed at a periphery of the substrate includes steps of forming a wiring on the substrate, and forming an insulating layer on the wiring. The insulating layer includes a silicon nitride or a silicon oxide deposited by a sputtering technique. The insulating layer is seal-bonded with the conductive supporting frame.
摘要:
High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.
摘要:
An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a detector which detects a charged particle beam, a deflector which deflects the charged particle beam to scan the substrate or the detector with the charged particle beam, and a controller which controls the deflector to scan each of a plurality of scanning ranges on the detector with the charged particle beam, and calculates, on the basis of the charged particle beam amount detected by the detector upon scanning the plurality of scanning ranges, the intensity distribution of the charged particle beam which strikes the detector.
摘要:
A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam source by the plurality of electron lenses, and a projection electrooptic system for projecting on a substrate the plurality of intermediate images formed by the electrooptic system array. The electrooptic system array includes at least two electrodes arranged along paths of a plurality of charged-particle beams, each of the at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode which is interposed between the at least two electrodes and has a plurality of shields corresponding to the respective paths of the plurality of charged-particle beams.
摘要:
In a charged particle beam exposure method of applying/not applying charged particle beams to expose a substrate by deflecting the charged particle beams to move the charged particle beams on a blanking aperture stop, the size of the charged particle beams on the blanking aperture stop is made larger than the size of the blanking aperture stop.
摘要:
A semiconductor manufacturing factory includes a plurality of semiconductor manufacturing apparatuses including an exposure apparatus for exposing a substrate by using a plurality of charged particle beams, a local area network for connecting the plurality of semiconductor manufacturing apparatuses, and a gateway for connecting the local area network to an external network of the semiconductor manufacturing factory. The exposure apparatus includes a lens array, which has a plurality of lenses and directs a plurality of charged particle beams onto a substrate. The lens array includes at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode interposed between the at least two electrodes.
摘要:
This invention provides a multi-charged-particle beam exposure apparatus capable of easily correcting at a high precision the electron-optic characteristics of each column which constitutes an electron-optic system. The exposure apparatus has magnetic lens arrays (ML1, ML2, ML3, and ML4) which commonly adjust the electron-optic characteristics of a plurality of columns which constitute the electron-optic system, and dynamic focus lenses or deflector arrays which individually correct the electron-optic characteristics of the columns.
摘要:
The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.
摘要:
An electron beam exposure system which includes a plurality of electron beam exposure apparatuses and achieves reduction in the memory of an electron beam exposure apparatus by eliminating data transfer/data conversion for each electron beam exposure apparatus. The plurality of electron beam exposure apparatuses of the electron beam exposure system deflect an electron beam on the basis of control data and expose a pattern onto an object to be exposed, and a data control device sends, on the basis of pattern information of a pattern to be exposed which is sent out from one of the electron beam exposure apparatuses, control data corresponding to the pattern to be exposed to the electron beam exposure apparatus which has sent the pattern information. Also disclosed is a method of manufacturing devices, which utilizes a plurality of electron beam exposure apparatuses.
摘要:
An electron beam exposure apparatus for drawing a pattern on an object to be exposed using a plurality of electron beams. The apparatus includes an electron beam source for emitting electrons, a plurality of elementary electron optical systems for respectively forming intermediate images of the electron source, a projection electron optical system for projecting the plurality of intermediate images onto the object to be exposed and an adjustment unit for dynamically adjusting sizes of dot patterns formed on the object to be exposed upon projection of the intermediate images in correspondence with fields to be exposed of the pattern to be drawn by exposure on the object to be exposed.