公开(公告)号：US20050253082A1

公开(公告)日：2005-11-17

申请号：US11168425

申请日：2005-06-29

申请人： Haruhito Ono ,  Masato Muraki

发明人： Haruhito Ono ,  Masato Muraki

IPC分类号： G03F7/20 ,  G01N23/00 ,  G21G5/00 ,  G21K5/10 ,  H01J9/14 ,  H01J9/18 ,  H01J37/04 ,  H01J37/12 ,  H01J37/24 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027 ,  H01L31/00 ,  G21K7/00 ,  G21K1/08

CPC分类号： H01J37/12 ,  G01N23/00 ,  H01J9/14 ,  H01J9/18 ,  H01J37/3007 ,  H01J2237/1205 ,  H01J2237/151 ,  H01J2237/1534 ,  H01J2237/3175 ,  H01J2237/31774

摘要： A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam source by the plurality of electron lenses, and a projection electrooptic system for projecting on a substrate the plurality of intermediate images formed by the electrooptic system array. The electrooptic system array includes at least two electrodes arranged along paths of a plurality of charged-particle beams, each of the at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode which is interposed between the at least two electrodes and has a plurality of shields corresponding to the respective paths of the plurality of charged-particle beams.

摘要翻译： 带电粒子束曝光装置包括用于发射带电粒子束的带电粒子束源，具有多个电子透镜并由多个电子透镜形成带电粒子束源的多个中间图像的电光系统阵列 的电子透镜，以及用于在基板上投影由电光系统阵列形成的多个中间图像的投射电光系统。 电光系统阵列包括沿着多个带电粒子束的路径布置的至少两个电极，所述至少两个电极中的每一个在所述多个带电粒子束的路径上具有多个孔，以及屏蔽电极， 设置在所述至少两个电极之间并且具有对应于所述多个带电粒子束的相应路径的多个屏蔽。

公开(公告)号：US07126141B2

公开(公告)日：2006-10-24

申请号：US11168425

申请日：2005-06-29

申请人： Haruhito Ono ,  Masato Muraki

发明人： Haruhito Ono ,  Masato Muraki

IPC分类号： G21K5/00

CPC分类号： H01J37/12 ,  G01N23/00 ,  H01J9/14 ,  H01J9/18 ,  H01J37/3007 ,  H01J2237/1205 ,  H01J2237/151 ,  H01J2237/1534 ,  H01J2237/3175 ,  H01J2237/31774

摘要： A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam source by the plurality of electron lenses, and a projection electrooptic system for projecting on a substrate the plurality of intermediate images formed by the electrooptic system array. The electrooptic system array includes at least two electrodes arranged along paths of a plurality of charged-particle beams, each of the at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode which is interposed between the at least two electrodes and has a plurality of shields corresponding to the respective paths of the plurality of charged-particle beams.

摘要翻译： 带电粒子束曝光装置包括用于发射带电粒子束的带电粒子束源，具有多个电子透镜并由多个电子透镜形成带电粒子束源的多个中间图像的电光系统阵列 的电子透镜，以及用于在基板上投影由电光系统阵列形成的多个中间图像的投射电光系统。 电光系统阵列包括沿着多个带电粒子束的路径布置的至少两个电极，所述至少两个电极中的每一个在所述多个带电粒子束的路径上具有多个孔，以及屏蔽电极， 设置在所述至少两个电极之间并且具有对应于所述多个带电粒子束的相应路径的多个屏蔽。

公开(公告)号：US07038226B2

公开(公告)日：2006-05-02

申请号：US10454576

申请日：2003-06-05

申请人： Haruhito Ono ,  Masato Muraki

发明人： Haruhito Ono ,  Masato Muraki

IPC分类号： H01J3/14 ,  H01J37/00 ,  A61N5/00 ,  G21G5/00

CPC分类号： H01J37/12 ,  G01N23/00 ,  H01J9/14 ,  H01J9/18 ,  H01J37/3007 ,  H01J2237/1205 ,  H01J2237/151 ,  H01J2237/1534 ,  H01J2237/3175 ,  H01J2237/31774

摘要： A semiconductor manufacturing factory includes a plurality of semiconductor manufacturing apparatuses including an exposure apparatus for exposing a substrate by using a plurality of charged particle beams, a local area network for connecting the plurality of semiconductor manufacturing apparatuses, and a gateway for connecting the local area network to an external network of the semiconductor manufacturing factory. The exposure apparatus includes a lens array, which has a plurality of lenses and directs a plurality of charged particle beams onto a substrate. The lens array includes at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode interposed between the at least two electrodes.

摘要翻译： 一种半导体制造工厂包括多个半导体制造装置，其包括通过使用多个带电粒子束使基板曝光的曝光装置，用于连接多个半导体制造装置的局域网，以及用于连接局域网 到半导体制造工厂的外部网络。 曝光装置包括具有多个透镜并将多个带电粒子束引导到基板上的透镜阵列。 透镜阵列包括在多个带电粒子束的路径上具有多个孔的至少两个电极以及插在该至少两个电极之间的屏蔽电极。

公开(公告)号：US06965153B1

公开(公告)日：2005-11-15

申请号：US09819737

申请日：2001-03-29

申请人： Haruhito Ono ,  Masato Muraki

发明人： Haruhito Ono ,  Masato Muraki

IPC分类号： G03F7/20 ,  G01N23/00 ,  G21G5/00 ,  G21K5/10 ,  H01J9/14 ,  H01J9/18 ,  H01J37/04 ,  H01J37/12 ,  H01J37/24 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027 ,  H01L31/00

CPC分类号： H01J37/12 ,  G01N23/00 ,  H01J9/14 ,  H01J9/18 ,  H01J37/3007 ,  H01J2237/1205 ,  H01J2237/151 ,  H01J2237/1534 ,  H01J2237/3175 ,  H01J2237/31774

摘要： This invention relates to an electrooptic system array having a plurality of electron lenses. The electrooptic system array includes upper, middle, and lower electrodes arranged along the paths of a plurality of charged-particle beams, the upper, middle, and lower electrodes having pluralities of apertures on the paths of the plurality of charged-particle beams, an upper shield electrode which is interposed between the upper and middle electrodes and has a plurality of shields corresponding to the respective paths of the charged-particle beams, and a lower shield electrode which is interposed between the lower and middle electrodes and has a plurality of shields corresponding to the respective paths of the charged-particle beams.

摘要翻译： 本发明涉及具有多个电子透镜的电光系统阵列。 电光系统阵列包括沿着多个带电粒子束的路径布置的上电极，中电极和下电极，上电极，中电极和下电极在多个带电粒子束的路径上具有多个孔， 上屏蔽电极，其插入在上电极和中间电极之间，并且具有对应于带电粒子束的各个路径的多个屏蔽，以及插入在下电极和中间电极之间的下屏蔽电极，并且具有多个屏蔽 对应于带电粒子束的相应路径。

公开(公告)号：US06559463B2

公开(公告)日：2003-05-06

申请号：US09499297

申请日：2000-02-07

申请人： Haruhito Ono ,  Yoshikiyo Yui ,  Masato Muraki

发明人： Haruhito Ono ,  Yoshikiyo Yui ,  Masato Muraki

IPC分类号： H01J3730

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766

摘要： A mask stage speed |Vm|, a wafer stage speed |Vw|, and an absolute value |&Dgr;S| of a beam deflection value are determined (step 101). Then, it is judged whether a stripe number is even or odd (step 108) and deflective directions of a mask stage, a wafer stage, and a wafer deflector are set in accordance with the above judgment result (steps 109 and 110). Then, the wafer stage and mask stage respectively start continuous movement (step 113) and divided patterns are exposed (step 115-119). It is judged whether all divided patterns are exposed (step 120). When all divided patterns are not exposed, the next divided pattern is exposed by adding a deflection value on a wafer corresponding to a beam width on a mask (step 121).

摘要翻译： 掩模台速度| Vm |，晶片台速度| Vw |和绝对值| DELTAS | 确定光束偏转值（步骤101）。 然后，根据上述判断结果判断条纹号是偶数还是奇数（步骤108），并设置掩模台，晶片台和晶片偏转器的偏转方向（步骤109和110）。 然后，晶片台和掩模台分别开始连续移动（步骤113）并且分割图案被曝光（步骤115-119）。 判断所有分割图案是否被曝光（步骤120）。 当所有分割图案都未曝光时，通过在对应于掩模上的光束宽度的晶片上添加偏转值来曝光下一分割图案（步骤121）。

公开(公告)号：US08083562B2

公开(公告)日：2011-12-27

申请号：US12355376

申请日：2009-01-16

申请人： Hiromasa Mitani ,  Masato Muraki

发明人： Hiromasa Mitani ,  Masato Muraki

IPC分类号： H01J9/26 ,  H01J9/32

CPC分类号： H01J9/261 ,  H01J29/90 ,  H01J31/127

摘要： A manufacturing method of an image display apparatus having a substrate and a conductive supporting frame formed at a periphery of the substrate includes steps of forming a wiring on the substrate, and forming an insulating layer on the wiring. The insulating layer includes a silicon nitride or a silicon oxide deposited by a sputtering technique. The insulating layer is seal-bonded with the conductive supporting frame.

摘要翻译： 具有形成在基板的周边的基板和导电支撑框架的图像显示装置的制造方法包括在基板上形成布线的步骤，以及在布线上形成绝缘层。 绝缘层包括通过溅射技术沉积的氮化硅或氧化硅。 绝缘层与导电支撑框架密封接合。

公开(公告)号：US20100078555A1

公开(公告)日：2010-04-01

申请号：US12630346

申请日：2009-12-03

申请人： Ryo FUJITA ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

发明人： Ryo FUJITA ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC分类号： G01N23/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

摘要翻译： 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US20080067403A1

公开(公告)日：2008-03-20

申请号：US11762182

申请日：2007-06-13

申请人： Masato Muraki ,  Haruo Yoda

发明人： Masato Muraki ,  Haruo Yoda

IPC分类号： H01J3/14

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/30483

摘要： An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a detector which detects a charged particle beam, a deflector which deflects the charged particle beam to scan the substrate or the detector with the charged particle beam, and a controller which controls the deflector to scan each of a plurality of scanning ranges on the detector with the charged particle beam, and calculates, on the basis of the charged particle beam amount detected by the detector upon scanning the plurality of scanning ranges, the intensity distribution of the charged particle beam which strikes the detector.

摘要翻译： 公开了一种在具有带电粒子束的基板上绘制图案的曝光装置。 曝光装置包括检测带电粒子束的检测器，使带电粒子束偏转以利用带电粒子束扫描基板或检测器的偏转器，以及控制偏转器扫描多个扫描范围中的每一个的控制器 在具有带电粒子束的检测器上，并且基于扫描多个扫描范围时由检测器检测到的带电粒子束量计算撞击检测器的带电粒子束的强度分布。

公开(公告)号：US07049610B2

公开(公告)日：2006-05-23

申请号：US10885665

申请日：2004-07-08

申请人： Masato Muraki ,  Haruo Yoda

发明人： Masato Muraki ,  Haruo Yoda

IPC分类号： H01J37/305

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0435 ,  H01J2237/083 ,  H01J2237/30477

摘要： In a charged particle beam exposure method of applying/not applying charged particle beams to expose a substrate by deflecting the charged particle beams to move the charged particle beams on a blanking aperture stop, the size of the charged particle beams on the blanking aperture stop is made larger than the size of the blanking aperture stop.

摘要翻译： 在通过使带电粒子束偏转以使带电粒子束移动到消隐孔径光阑上而施加/不施加带电粒子束以暴露衬底的带电粒子束曝光方法中，消隐孔径光阑上的带电粒子束的尺寸为 制成大于冲孔孔径的尺寸。

公开(公告)号：US06784442B2

公开(公告)日：2004-08-31

申请号：US10329388

申请日：2002-12-27

申请人： Masato Muraki ,  Hiroya Ohta ,  Shin-ichi Hashimoto

发明人： Masato Muraki ,  Hiroya Ohta ,  Shin-ichi Hashimoto

IPC分类号： G21G500

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/30472

摘要： This invention provides a multi-charged-particle beam exposure apparatus capable of easily correcting at a high precision the electron-optic characteristics of each column which constitutes an electron-optic system. The exposure apparatus has magnetic lens arrays (ML1, ML2, ML3, and ML4) which commonly adjust the electron-optic characteristics of a plurality of columns which constitute the electron-optic system, and dynamic focus lenses or deflector arrays which individually correct the electron-optic characteristics of the columns.

摘要翻译： 本发明提供一种能够以高精度容易地校正构成电子光学系统的各列的电子光学特性的多电荷粒子束曝光装置。 曝光装置具有通常调整构成电子光学系统的多个列的电子光学特性的磁透镜阵列（ML1，ML2，ML3和ML4），以及单独校正电子的动态聚焦透镜或偏转器阵列 - 列的光学特性。