公开(公告)号：US06784442B2

公开(公告)日：2004-08-31

申请号：US10329388

申请日：2002-12-27

申请人： Masato Muraki ,  Hiroya Ohta ,  Shin-ichi Hashimoto

发明人： Masato Muraki ,  Hiroya Ohta ,  Shin-ichi Hashimoto

IPC分类号： G21G500

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/30472

摘要： This invention provides a multi-charged-particle beam exposure apparatus capable of easily correcting at a high precision the electron-optic characteristics of each column which constitutes an electron-optic system. The exposure apparatus has magnetic lens arrays (ML1, ML2, ML3, and ML4) which commonly adjust the electron-optic characteristics of a plurality of columns which constitute the electron-optic system, and dynamic focus lenses or deflector arrays which individually correct the electron-optic characteristics of the columns.

摘要翻译： 本发明提供一种能够以高精度容易地校正构成电子光学系统的各列的电子光学特性的多电荷粒子束曝光装置。 曝光装置具有通常调整构成电子光学系统的多个列的电子光学特性的磁透镜阵列（ML1，ML2，ML3和ML4），以及单独校正电子的动态聚焦透镜或偏转器阵列 - 列的光学特性。

公开(公告)号：US06919574B2

公开(公告)日：2005-07-19

申请号：US10672469

申请日：2003-09-26

申请人： Shin-ichi Hashimoto ,  Haruo Yoda ,  Masato Muraki

发明人： Shin-ichi Hashimoto ,  Haruo Yoda ,  Masato Muraki

IPC分类号： G03F7/20 ,  H01J3/14 ,  H01J37/147 ,  H01J37/302 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/1477 ,  H01J37/3177 ,  H01J2237/1504

摘要： An electron beam exposure apparatus for exposing a wafer by an electron beam incorporates a circuit structure for conducting a scan test to self-diagnose the electrical connections. The electron beam exposure apparatus includes: an electron beam generating section for generating the electron beam; a plurality of deflectors for deflecting the corresponding electron beams; a deflection control section for outputting a deflection control signal for causing the deflector to deflect the electron beam; and a control signal storage section for storing a value of the deflection control signal output from the deflection control section. The control signal storage section connects the plurality of deflectors in series when conducting the scan test. The control signal storage section and the deflector may be monolithically integrated on a semiconductor substrate.

摘要翻译： 用于通过电子束曝光晶片的电子束曝光设备结合了用于进行扫描测试以自诊断电连接的电路结构。 电子束曝光装置包括：用于产生电子束的电子束产生部分; 用于偏转对应的电子束的多个偏转器; 偏转控制部分，用于输出用于使偏转器偏转电子束的偏转控制信号; 以及控制信号存储部分，用于存储从偏转控制部分输出的偏转控制信号的值。 控制信号存储部在进行扫描试验时，串联连接多个导流板。 控制信号存储部分和偏转器可以单片集成在半导体衬底上。

公开(公告)号：US06917045B2

公开(公告)日：2005-07-12

申请号：US10672435

申请日：2003-09-26

申请人： Shin-ichi Hashimoto ,  Haruo Yoda ,  Masato Muraki

发明人： Shin-ichi Hashimoto ,  Haruo Yoda ,  Masato Muraki

IPC分类号： G03F7/20 ,  G21K1/087 ,  H01J37/147 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/087 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/30433

摘要： An electron beam exposure apparatus for controlling deflection timing of an electron beam with high precision, including: a blanking-electrode array having a deflecting electrode for deflecting an electron beam; a deflection timing control section for outputting the control signal for controlling the blanking-electrode array; a load circuit, of which the impedance is the same as that of the blanking-electrode array, where the wire length between the deflection timing control section and the load circuit is shorter than the wire length between the deflection timing control section and the deflecting electrode of the blanking-electrode array; and a switching section, connecting with the deflection timing control section, the blanking-electrode array, and the load circuit, for switching the destination of the control signal output from the deflection timing control section between the blanking-electrode array and the load circuit.

摘要翻译： 一种用于高精度地控制电子束的偏转定时的电子束曝光装置，包括：具有用于偏转电子束的偏转电极的消隐电极阵列; 偏转定时控制部分，用于输出用于控制消隐电极阵列的控制信号; 负载电路，其阻抗与消隐电极阵列的阻抗相同，其中偏转定时控制部分和负载电路之间的线长度短于偏转正时控制部分和偏转电极之间的线长度 的消隐电极阵列; 以及与偏转定时控制部分，消隐电极阵列和负载电路连接的切换部分，用于切换从偏转定时控制部分在消隐电极阵列和负载电路之间输出的控制信号的目的地。

公开(公告)号：US06768118B2

公开(公告)日：2004-07-27

申请号：US10350188

申请日：2003-01-24

申请人： Yoshinori Nakayama ,  Yasunari Sohda ,  Hiroya Ohta ,  Norio Saitou ,  Masato Muraki ,  Masaki Takakuwa

发明人： Yoshinori Nakayama ,  Yasunari Sohda ,  Hiroya Ohta ,  Norio Saitou ,  Masato Muraki ,  Masaki Takakuwa

IPC分类号： H01J326

CPC分类号： H01J37/244 ,  H01J2237/24405 ,  H01J2237/31774

摘要： The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.

摘要翻译： 本发明提供了一种能够在多电子束书写系统中提供远光监测精度和高速监测的光束监测传感器以及使用其的监测方法。在用于电子束监测的法拉第杯中，钽或重金属 使用原子序数大于钽的材料来提供具有高纵横比的法拉第杯结构。 微法拉第杯允许电子束监测具有较少的光束泄漏到高加速度电子束。

公开(公告)号：US07005659B2

公开(公告)日：2006-02-28

申请号：US10885666

申请日：2004-07-08

申请人： Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

发明人： Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

IPC分类号： H01J3/26 ,  H01J37/28 ,  G21K5/10

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174

摘要： A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.

摘要翻译： 带电粒子束曝光装置具有光束整形光学系统，其形成发射带电粒子束的带电粒子源的图像，孔径阵列和静电透镜，其从带电粒子源的图像形成带电粒子源的多个图像 粒子源，还原电子光学系统，其将带电粒子源的多个图像减少并投影到晶片上;以及当束整形光学系统形成带电粒子源的图像以产生像散的第一标示器，以便校正 在还原电子光学系统中产生散光。 通过用带电粒子束扫描使基板曝光的带电粒子束曝光方法包括使基板上的带电粒子束的扫描方向的尺寸小于垂直于该方向的方向上的尺寸的调整步骤。

公开(公告)号：US06870171B2

公开(公告)日：2005-03-22

申请号：US10806190

申请日：2004-03-23

申请人： Masaki Hosoda ,  Masato Muraki ,  Hiroya Ohta ,  Haruo Yoda

发明人： Masaki Hosoda ,  Masato Muraki ,  Hiroya Ohta ,  Haruo Yoda

IPC分类号： G03F7/20 ,  H01J37/147 ,  H01J37/317 ,  H01L21/027 ,  H01J37/302 ,  H01J37/04 ,  H01J37/30

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/1471 ,  H01J37/3177 ,  H01J2237/30455

摘要： An electron beam exposure apparatus which exposes a wafer (118) by using a plurality of electron beams corrects the positional error of the electron beams by using multi-deflector arrays (105, 106) capable of independently deflecting the positions of the electron beams, and pattern data to be projected onto the wafer (118). More specifically, when each of the electron beams is deflected to a predetermined exposure position on the basis of the pattern data, a static positional error independent of the deflection position is corrected by the multi-deflector arrays (105, 106), and a dynamic positional error depending on the deflection position is corrected on the basis of the pattern data.

摘要翻译： 通过使用多个电子束使晶片（118）曝光的电子束曝光装置通过使用能够独立地偏转电子束的位置的多偏转阵列（105,106）来校正电子束的位置误差，以及 图案数据被投影到晶片（118）上。 更具体地说，当基于图案数据将每个电子束偏转到预定曝光位置时，通过多偏转器阵列（105,106）校正与偏转位置无关的静态位置误差，并且动态 基于图案数据来校正取决于偏转位置的位置误差。

公开(公告)号：US20050029473A1

公开(公告)日：2005-02-10

申请号：US10909300

申请日：2004-08-03

申请人： Masato Muraki ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Haruo Yoda ,  Norio Saitou

发明人： Masato Muraki ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Haruo Yoda ,  Norio Saitou

IPC分类号： G03F7/20 ,  H01J37/04 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  G01K1/08 ,  H01J3/14

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/317

摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams comprises a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams, and a second measurement member for making the plurality of charged particle beams come incident and multiplying electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.

摘要翻译： 使用多个带电粒子束曝光基板的带电粒子束曝光装置包括使多个带电粒子束入射的第一测量部件和测量带电粒子束的总电流值，以及第二测量部件， 使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

公开(公告)号：US07378671B2

公开(公告)日：2008-05-27

申请号：US11337603

申请日：2006-01-24

申请人： Masato Muraki ,  Hiroya Ohta

发明人： Masato Muraki ,  Hiroya Ohta

IPC分类号： H01J37/304

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/30433

摘要： A charged particle beam lithography machine for exposing a target exposure surface by using a plurality of charged particle beams. The machine includes a charged particle source to emit a charged particle beam, an aperture substrate which has a plurality of apertures to divide the charged particle beam from the charged particle source into a plurality of charged particle beams, a plurality of electron optical systems which have the apertures as pupils, a charged particle beam optical system which projects, to the target exposure surface, charged particle source images formed by the plurality of electron optical systems, a unit adapted to set the apertures of the aperture substrate to an aperture for exposure and an aperture for aberration measurement to make the plurality of charged particle beams strike the charged particle beam optical system at different incident angles, and a detecting unit adapted to detect a position where the plurality of charged particle beams, which have passed through the aperture for aberration measurement, form images on an image surface of the charged particle beam optical system.

摘要翻译： 一种带电粒子束光刻机，用于通过使用多个带电粒子束来曝光目标曝光表面。 该机器包括用于发射带电粒子束的带电粒子源，具有多个孔径以将带电粒子束从带电粒子源分成多个带电粒子束的孔基底，多个电子光学系统，其具有 作为瞳孔的孔，带电粒子束光学系统，其投影到目标曝光表面，由多个电子光学系统形成的带电粒子源图像，适于将孔径基板的孔径设置为用于曝光的孔径;以及 用于使所述多个带电粒子束以不同的入射角撞击所述带电粒子束光学系统的像差测量孔;以及检测单元，其适于检测穿过所述孔径以进行像差的所述多个带电粒子束的位置 测量，在带电粒子束光学系统的图像表面上形成图像。

公开(公告)号：US20060169927A1

公开(公告)日：2006-08-03

申请号：US11337444

申请日：2006-01-24

申请人： Masato Muraki ,  Hiroya Ohta

发明人： Masato Muraki ,  Hiroya Ohta

IPC分类号： G21K5/10

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/30433

摘要： The aberrations of a charged particle beam optical system in a lithography machine are measured. Control amounts to control optical elements included in the charged particle beam optical system are changed, the variations of the aberrations are obtained by executing the aberration measuring step, and the aberration sensitivities of the control amounts are obtained. The control amounts are decided on the basis of the aberrations of the charged particle beam optical system and the aberration sensitivities of the control amounts to set the aberrations of the charged particle beam optical system to target aberrations.

摘要翻译： 测量光刻机中带电粒子束光学系统的像差。 控制量控制包含在带电粒子束光学系统中的光学元件的变化，通过执行像差测量步骤获得像差的变化，并获得控制量的像差灵敏度。 基于带电粒子束光学系统的像差和控制量的像差敏感度来确定控制量，以将带电粒子束光学系统的像差设置为目标像差。

公开(公告)号：US06946665B2

公开(公告)日：2005-09-20

申请号：US10909300

申请日：2004-08-03

申请人： Masato Muraki ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Haruo Yoda ,  Norio Saitou

发明人： Masato Muraki ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Haruo Yoda ,  Norio Saitou

IPC分类号： G03F7/20 ,  H01J37/04 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J3/07 ,  H01J3/14

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/317

摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams includes a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams. A second measurement member makes the plurality of charged particle beams come incident and multiplies electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.

摘要翻译： 使用多个带电粒子束曝光基板的带电粒子束曝光装置包括用于使多个带电粒子束入射的第一测量部件，并测量带电粒子束的总电流值。 第二测量构件使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。