Abstract:
In one embodiment, a multi charged particle beam writing method includes forming a multi charged particle beam with which a substrate serving as a writing target is irradiated, deflecting the multi charged particle beam to a position with a predetermined deflection offset added so that deflection voltages respectively applied to a plurality of electrodes of an electrostatic positioning deflector does not include a state where all the deflection voltages are zero, and irradiating the substrate with the multi charged particle beam. A positive common voltage is added to the deflection voltages which are applied to the respective electrodes of the electrostatic positioning deflector.
Abstract:
Provided is a multi charged particle beam writing apparatus including: an emission unit emitting a charged particle beam; a restriction aperture unit having a first opening having a variable opening area, the restriction aperture unit shielding a portion of the charged particle beam; a shaping aperture array substrate having a plurality of second openings, the shaping aperture array substrate forming multiple beams by allowing the shaping aperture array substrate to be irradiated with the charged particle beam passing through the first opening and allowing a portion of the charged particle beam to pass through the plurality of second openings; and a blanking aperture array substrate having a plurality of third openings, each beam of the multiple beams passing through the plurality of third openings, the blanking aperture array substrate being capable of independently deflecting each beam of the multiple beams.
Abstract:
In one embodiment, a multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus a multi charged particle beam on a substrate, which has passed through a limiting aperture member, and three or more correction lenses correcting an imaging state of the multi charged particle beam on the substrate. The three or more correction lenses are comprised of a first magnetic correction lens, and two or more correction lenses, the two or more correction lenses are placed inside a lens magnetic field of one of the two or more-stage objective lenses, and one or no electrostatic correction lens is placed inside a magnetic field of each of the two or more-stage objective lenses.
Abstract:
An electron beam writing apparatus according to the present invention includes a potential regulating member arranged to be upstream of a target object in the case where the target object is placed on a stage, and configured to be set to have a fixed potential being positive with respect to the target object, a potential applying circuit configured to apply a voltage to the target object or the potential regulating member so that the potential regulating member has the fixed potential, and a correction circuit configured to correct a positional deviation of the electron beam on a surface of the target object which occurs in the case where the target object is irradiated with the electron beam in the state in which the potential regulating member has the fixed potential.
Abstract:
A multi charged particle beam apparatus irradiates a substrate placed on a stage with a multi charged particle beam through an illumination optical system including a plurality of components, and an objective lens successively. In one embodiment, an optical system adjustment method for the multi charged particle beam apparatus includes measuring positional deviation amounts of a plurality of individual beams included in the multi charged particle beam at two or more different heights in an optical axis direction of a measurement surface or an imaging position of the multi charged particle beam, calculating a normalized position difference based on the two or more heights and the positional deviation amounts, the normalized position difference being an illumination system aberration equivalent amount of the illumination optical system, and adjusting a set value for at least one of the plurality of components using a value of the normalized position difference.
Abstract:
The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.
Abstract:
In one embodiment, a charged particle beam writing apparatus includes a positioning deflector adjusting an irradiation position of a charged particle beam radiated to a substrate which is a writing target, a fixed deflector which is disposed downstream of the positioning deflector in a traveling direction of the charged particle beam, and in which an amount of deflection is fixed, a focus correction lens performing focus correction on the charged particle beam according to a surface height of the substrate, and an object lens focusing the charged particle beam.
Abstract:
A blanking aperture array mechanism includes a blanking aperture array chip configured to include a plurality of blankers which, at incidence of multiple beams, individually switch a state between “beam ON” and “beam OFF” of the multiple beams, and a mounting substrate configured to support the blanking aperture array chip, and to include a power supply plane which supplies power to the blanking aperture array chip, and a cancelling layer, arranged at one of an upper layer side and a lower layer side of the power supply plane in a manner overlapping with the power supply plane, to cancel out a magnetic field generated by the power supply plane.
Abstract:
According to one embodiment, a charged particle beam writing apparatus includes, a writing mechanism, a writing control circuit, a deflection operation control circuit configured to generate control data for controlling the blanking of each of the charged particle beams based on the shot data, a storage, a blanking control circuit configured to control the blanking based on the control data, and a detector. The writing control circuit is configured to, when the detector detects the abnormality during the writing, interrupt the writing, and generate interrupt position information at a position where the writing is interrupted based on the shot data which has been stored at the storage and is related to the control data that has not been used for controlling the blanking.
Abstract:
A blanking device for multi-beams includes a substrate, a dielectric film formed on the substrate, plural first electrodes, at positions each exposed in a corresponding opening, to be applied with a first deflection potential, plural second electrodes, at positions each opposite to a corresponding first electrode with respect to the corresponding opening, to be applied with a second deflection potential, including a ground potential, for deflecting a corresponding beam of the multi-beams by a difference between the first and second deflection potentials, and a conductive film arranged in, other than plural first regions on the dielectric film each along a corresponding first electrode and being shaded by each first electrode in a case of being viewed from a position where a corresponding beam passes through a corresponding opening, a second region on the dielectric film, wherein insulation is provided between the plural first and second electrodes.