APERTURE SET FOR MULTI-BEAM AND MULTI-CHARGED PARTICLE BEAM WRITING APPARATUS

    公开(公告)号:US20180182593A1

    公开(公告)日:2018-06-28

    申请号:US15854303

    申请日:2017-12-26

    CPC classification number: H01J37/09 H01J37/3177

    Abstract: In one embodiment, an aperture set for a multi-beam includes a shaping aperture array in which a plurality of first openings are formed, a region including the plurality of first openings is irradiated with a charged particle beam discharged from a discharge unit, and portions of the charged particle beam pass through the plurality of respective first openings to form a multi-beam, a first shield plate in which a plurality of second openings is formed, through which a corresponding beam in the multi-beam, which passes through the plurality of first openings, passes, and a blanking aperture array in which a plurality of third openings is formed, through which a corresponding beam in the multi-beam, which passes through the plurality of first openings and the plurality of second openings, passes. The second openings are wider than the first openings.

    MULTI-BEAM OPTICAL SYSTEM ADJUSTMENT METHOD, AND MULTI-BEAM EXPOSURE APPARATUS

    公开(公告)号:US20180130632A1

    公开(公告)日:2018-05-10

    申请号:US15797588

    申请日:2017-10-30

    CPC classification number: H01J37/09 H01J37/20 H01J37/244 H01J37/3174

    Abstract: A multi-beam optical system adjustment method includes forming multi-beams by making a region including the whole of a plurality of openings in a shaping aperture array substrate irradiated by a charged particle beam, and making portions of the charged particle beam individually pass through a corresponding one of the plurality of openings, measuring a distortion of the multi-beams while variably changing the crossover height position of the multi-beams, measuring the crossover height position of the multi-beams where the distortion of the multi-beams is smaller than the others, and adjusting the height position of a limiting aperture substrate which limits passage of a beam deviated from the trajectory in the multi-beams to the crossover height position.

    Beam grid layout
    14.
    发明授权

    公开(公告)号:US09934943B2

    公开(公告)日:2018-04-03

    申请号:US14787775

    申请日:2014-05-05

    Abstract: A sub-beam aperture array for forming a plurality of sub-beams from one or more charged particle beams. The sub-beam aperture array comprises one or more beam areas, each beam area comprising a plurality of sub-beam apertures arranged in a non-regular hexagonal pattern, the sub-beam apertures arranged so that, when projected in a first direction onto a line parallel to a second direction, the sub-beam apertures are uniformly spaced along the line, and wherein the first direction is different from the second direction. The system further comprises a beamlet aperture array with a plurality of beamlet apertures arranged in one or more groups. The beamlet aperture array is arranged to receive the sub-beams and form a plurality of beamlets at the locations of the beamlet apertures of the beamlet array.

    CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD
    20.
    发明申请
    CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD 有权
    充电颗粒光束写字装置和充电颗粒光束写字方法

    公开(公告)号:US20160336141A1

    公开(公告)日:2016-11-17

    申请号:US15145398

    申请日:2016-05-03

    Inventor: Haruyuki NOMURA

    Abstract: A charged particle beam writing apparatus includes a limiting aperture member at the downstream side of the emission source, arranged such that its height position can be selectively adjusted, according to condition, to be one of the n-th height position (n being an integer of 1 or more) based on the n-th condition depending on at least one of the height position of the emission source and an emission current value, and the (n+m)th height position (m being an integer of 1 or more) based on the (n+m)th condition depending on at least one of the height position of the emission source and the emission current value, and a shaping aperture member at the downstream side of the electron lens and the limiting aperture member to shape the charged particle beam by letting a part of the charged particle beam pass through a second opening.

    Abstract translation: 带电粒子束写入装置包括在发射源的下游侧的限制孔径构件,其布置成使得其高度位置可以根据条件被选择性地调节为第n高度位置之一(n为整数) 基于根据发光源的高度位置和发射电流值中的至少一个的第n个条件,并且第(n + m)个高度位置(m是1或更大的整数) )基于取决于发射源的高度位置和发射电流值中的至少一个的第(n + m)条件,以及在电子透镜的下游侧的成形孔构件和限制孔径构件 带电粒子束通过使一部分带电粒子束通过第二个开口。

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