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公开(公告)号:CN106935579A
公开(公告)日:2017-07-07
申请号:CN201710084051.0
申请日:2013-01-25
申请人: 尼斯迪格瑞科技环球公司
发明人: 布拉德利·S·奥拉韦
IPC分类号: H01L25/16 , H01L33/62 , F21V23/00 , F21V23/06 , F21Y115/10
CPC分类号: H05B33/0857 , H01L24/24 , H01L24/82 , H01L27/15 , H01L33/0041 , H01L2224/24137 , H01L2224/32225 , H01L2224/73267 , H01L2924/10272 , H01L2924/1033 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/13033 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H05B33/083 , H01L2924/00 , H01L25/16 , F21V23/00 , F21V23/06 , H01L33/62
摘要: 本申请涉及有源发光二极管模块。本发明揭示LED模块,其具有与LED串联的控制MOSFET或其它晶体管。在一个实施例中,MOSFET晶片接合到LED晶片且经单件化以形成具有与单个LED相同的占据面积的数千个有源三端子LED模块。尽管红光、绿光及蓝光LED具有不同的正向电压,RGB模块可并联连接且其控制电压以60Hz或更大Hz交错以产生单一感知色彩,例如白色。所述RGB模块可连接于面板中以用于通用照明或彩色显示器。面板中的单个电介质层可囊封所有所述RGB模块,以形成紧凑且价廉的面板。描述用于彩色显示器及照明面板两者的各种寻址技术。描述用于减小所述LED对输入电压的变化的敏感度的各种电路。
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公开(公告)号:CN103972193B
公开(公告)日:2017-04-12
申请号:CN201410045302.0
申请日:2014-02-07
申请人: 英飞凌科技奥地利有限公司
IPC分类号: H01L23/488 , H01L21/60 , H01L21/58 , H01L25/07
CPC分类号: H01L23/48 , H01L21/50 , H01L23/3107 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/92 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/06181 , H01L2224/27318 , H01L2224/29078 , H01L2224/32245 , H01L2224/33181 , H01L2224/37011 , H01L2224/371 , H01L2224/37599 , H01L2224/40095 , H01L2224/40137 , H01L2224/40245 , H01L2224/45014 , H01L2224/48137 , H01L2224/73255 , H01L2224/73263 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2224/83815 , H01L2224/8382 , H01L2224/8384 , H01L2224/84801 , H01L2224/92246 , H01L2224/92247 , H01L2924/00014 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要: 各种实施例提供一种功率晶体管装置。功率晶体管装置可以包括载体;第一功率晶体管,具有控制电极和第一功率电极和第二功率电极;以及第二功率晶体管,具有控制电极和第一功率电极和第二功率电极。第一功率晶体管和第二功率晶体管可以彼此紧邻地布置在载体上,使得第一功率晶体管的控制电极和第二功率晶体管的控制电极面向载体。
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公开(公告)号:CN104106140B
公开(公告)日:2017-03-15
申请号:CN201380008594.4
申请日:2013-01-25
申请人: 尼斯迪格瑞科技环球公司
发明人: 布拉德利·S·奥拉韦
IPC分类号: H01L29/76 , H01L31/062 , H01L31/113
CPC分类号: H05B33/0857 , H01L24/24 , H01L24/82 , H01L27/15 , H01L33/0041 , H01L2224/24137 , H01L2224/32225 , H01L2224/73267 , H01L2924/10272 , H01L2924/1033 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/13033 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H05B33/083 , H01L2924/00
摘要: 本发明揭示LED模块,其具有与LED串联的控制MOSFET或其它晶体管。在一个实施例中,MOSFET晶片接合到LED晶片且经单件化以形成具有与单个LED相同的占据面积的数千个有源三端子LED模块。尽管红光、绿光及蓝光LED具有不同的正向电压,RGB模块可并联连接且其控制电压以60Hz或更大Hz交错以产生单一感知色彩,例如白色。所述RGB模块可连接于面板中以用于通用照明或彩色显示器。面板中的单个电介质层可囊封所有所述RGB模块,以形成紧凑且价廉的面板。描述用于彩色显示器及照明面板两者的各种寻址技术。描述用于减小所述LED对输入电压的变化的敏感度的各种电路。
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公开(公告)号:CN103681564B
公开(公告)日:2017-01-18
申请号:CN201310347355.3
申请日:2013-08-09
申请人: 英飞凌科技股份有限公司
IPC分类号: H01L23/488 , H01L21/48 , H01L21/60
CPC分类号: H01L24/27 , H01L23/14 , H01L23/49579 , H01L23/49883 , H01L24/05 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/05609 , H01L2224/05611 , H01L2224/05618 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/2741 , H01L2224/2929 , H01L2224/29294 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/32245 , H01L2224/83191 , H01L2224/83192 , H01L2224/83203 , H01L2224/8382 , H01L2224/8384 , H01L2224/83856 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/00
摘要: 本发明涉及电子装置和制造电子装置的方法,一种半导体装置包括导电载体和设置在所述载体上的半导体芯片。所述半导体装置还包括设置在所述载体和所述半导体芯片之间的多孔扩散焊料层。
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公开(公告)号:CN103178030B
公开(公告)日:2016-12-28
申请号:CN201210568793.8
申请日:2012-12-24
申请人: 英飞凌科技股份有限公司
CPC分类号: H01L23/48 , H01L23/24 , H01L23/3107 , H01L23/3135 , H01L23/3735 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L23/49811 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/92 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/0603 , H01L2224/06181 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/37124 , H01L2224/37147 , H01L2224/37155 , H01L2224/3716 , H01L2224/37639 , H01L2224/37647 , H01L2224/37655 , H01L2224/3766 , H01L2224/4005 , H01L2224/40095 , H01L2224/40137 , H01L2224/40227 , H01L2224/40247 , H01L2224/4103 , H01L2224/41051 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48464 , H01L2224/4847 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48769 , H01L2224/48771 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2224/8381 , H01L2224/8382 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/8482 , H01L2224/8485 , H01L2224/85447 , H01L2224/92247 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/141 , H01L2924/1431 , H01L2924/1434 , H01L2924/1461 , H01L2924/15787 , H01L2924/181 , H01L2924/19105 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01014 , H01L2924/01028 , H01L2924/01015 , H01L2924/20759
摘要: 本发明涉及一种包括安装在DCB衬底上的分立器件的模块及用于制造该模块的方法,该模块包括DCB衬底以及安装在DCB衬底上的分立器件,其中,分立器件包括:引线框架;安装在引线框架上的半导体芯片;以及覆盖半导体芯片的封装材料。
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公开(公告)号:CN102738036B
公开(公告)日:2016-12-14
申请号:CN201210087086.7
申请日:2012-03-28
申请人: 飞兆半导体公司
发明人: 丹尼尔·M·金泽 , 史蒂文·萨普 , 吴钟林 , 奥斯博·乔 , 比吉尔蒂斯·多斯多斯
IPC分类号: H01L21/67 , H01L21/336
CPC分类号: H01L29/7827 , H01L24/13 , H01L29/41766 , H01L29/66666 , H01L29/7809 , H01L29/7811 , H01L29/7813 , H01L2224/131 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要: 制造具有晶体管的晶圆级芯片规模封装(WLCSP)器件的系统和方法包括使用双金属漏极接点技术,其中的晶体管具有在该晶体管一个侧面上的源极、漏极和栅极接点,同时仍然具有低漏源接通电阻RDS(on)的优异电性能。该RDS(on)通过利用硅通孔(TSV)来形成漏极接点或通过利用紧密连接于漏极漂移区的铜层而被进一步改善。
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公开(公告)号:CN103377951B
公开(公告)日:2016-11-23
申请号:CN201310137491.X
申请日:2013-04-19
申请人: 英飞凌科技股份有限公司
IPC分类号: H01L21/58
CPC分类号: H01L25/16 , H01L21/561 , H01L23/295 , H01L23/49805 , H01L23/5389 , H01L23/562 , H01L24/24 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/743 , H01L24/82 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/50 , H01L2224/24011 , H01L2224/2402 , H01L2224/24137 , H01L2224/245 , H01L2224/27312 , H01L2224/27318 , H01L2224/2732 , H01L2224/27416 , H01L2224/27422 , H01L2224/27438 , H01L2224/2784 , H01L2224/27848 , H01L2224/29076 , H01L2224/29078 , H01L2224/2919 , H01L2224/2929 , H01L2224/29387 , H01L2224/2939 , H01L2224/30505 , H01L2224/3201 , H01L2224/32225 , H01L2224/32245 , H01L2224/33505 , H01L2224/48091 , H01L2224/48137 , H01L2224/4814 , H01L2224/48151 , H01L2224/73265 , H01L2224/73267 , H01L2224/82101 , H01L2224/82104 , H01L2224/82105 , H01L2224/82106 , H01L2224/83192 , H01L2224/83801 , H01L2224/83825 , H01L2224/83856 , H01L2224/83862 , H01L2224/83951 , H01L2224/92244 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2224/82 , H01L2924/00012 , H01L2224/83 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
摘要: 本发明涉及半导体器件的制造方法和半导体器件。在制造半导体器件的方法中,第一半导体元件被安装在载体上。b阶段可固化聚合物被沉积在载体上。第二半导体元件被附着在该聚合物上。
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公开(公告)号:CN105932020A
公开(公告)日:2016-09-07
申请号:CN201610339626.4
申请日:2010-07-30
申请人: 晶元光电股份有限公司
IPC分类号: H01L25/16 , H01L23/482 , H01L33/62 , H01S5/00
CPC分类号: H01L2224/14 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/00 , H01L2924/00012 , H01L25/16 , H01L23/482 , H01L25/167 , H01L33/62 , H01S5/00
摘要: 本发明公开了一种整合式发光装置。该整合式发光装置结合了至少一发光元件、包含集成电路区的控制元件以及将发光元件与控制元件电性连接的连接区。经由此结合方式,可以通过集成电路所设计的多样化功能来驱动发光元件,增加整合式发光装置的应用领域。
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公开(公告)号:CN105493291A
公开(公告)日:2016-04-13
申请号:CN201480031881.1
申请日:2014-06-06
申请人: 美国联合碳化硅公司
IPC分类号: H01L29/66
CPC分类号: H01L29/8083 , H01L29/0619 , H01L29/1066 , H01L29/66909 , H01L2924/13062
摘要: 描述了一种具有栅极沟槽和屏蔽沟槽的屏蔽结型场效应晶体管(JFET),屏蔽沟槽比栅极沟槽深且窄。栅极沟槽可以与屏蔽沟槽完全对准、部分地对准、或者与屏蔽沟槽间隔开。
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公开(公告)号:CN102569215B
公开(公告)日:2016-03-23
申请号:CN201110348230.3
申请日:2011-09-21
申请人: 英飞凌科技股份有限公司
CPC分类号: H01L24/83 , H01L24/27 , H01L24/29 , H01L24/32 , H01L2224/16225 , H01L2224/16227 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/29339 , H01L2224/29347 , H01L2224/32225 , H01L2224/32245 , H01L2224/73201 , H01L2224/73204 , H01L2224/83191 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/00 , H01L2924/01014 , H01L2924/01032 , H01L2924/01031 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/0401
摘要: 本发明涉及器件以及制造器件的方法。一种器件包括具有第一表面的半导体材料。第一材料被涂敷到所述第一表面,并且纤维材料被嵌入到所述第一材料中。
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