System and Method for Fully Integrated Microcrystal Electron Diffraction (MICROED)

    公开(公告)号:US20240387141A1

    公开(公告)日:2024-11-21

    申请号:US18554185

    申请日:2022-04-14

    Inventor: Tamir Gonen

    Abstract: An integrated microcrystal electron diffraction system and method are provided that include an electron source, a sample assembly configured to retain a sample, a camera assembly, and a control system. The control system pre-screens the sample on the sample assembly, collects image data of the sample via the camera assembly, and outputs microcrystal electron diffraction data based on the image data. Pre-screening includes capturing at least one pre-screen diffraction image of the sample; determining a position for the sample for imaging based on the at least one pre-screen diffraction image; and controlling the sample assembly to position the sample at the position. Collecting the image data includes generating an electron beam towards the sample at the position; rotating the sample assembly; and capturing, by the camera assembly, scatterings of the electron beam by the sample as diffraction images while the sample assembly is rotated.

    CHARGED PARTICLE DEVICE, CHARGED PARTICLE ASSESSMENT APPARATUS, MEASURING METHOD, AND MONITORING METHOD

    公开(公告)号:US20240339292A1

    公开(公告)日:2024-10-10

    申请号:US18748758

    申请日:2024-06-20

    CPC classification number: H01J37/244 H01J37/10 H01J37/28

    Abstract: There is provided a charged particle device for a charged particle inspection apparatus for projecting an array of sub-beams towards a sample, the charged particle device comprising: a charged particle optical element and a detector. The charged particle optical element has an up-beam surface having a plurality of openings to generate an array of sub-beams from a charged particle beam. In the charged particle optical element are defined: sub-beam apertures and monitoring apertures. The sub-beam aperture extend through the charged particle element for paths of the array of sub-beams towards a sample. The monitoring aperture extends through the charged particle element. The detector is in the monitoring aperture. At least part of the detector is down-beam of the up-beam surface. The detector measures a parameter of a portion of the charged particle beam incident on the detector.

    MULTI-BEAM CHARGED PARTICLE SOURCE WITH ALIGHMENT MEANS

    公开(公告)号:US20240096585A1

    公开(公告)日:2024-03-21

    申请号:US17768802

    申请日:2020-10-20

    Inventor: Pieter KRUIT

    CPC classification number: H01J37/147 H01J37/10

    Abstract: Disclosed are an apparatus and method for generating a plurality of substantially collimated charged particle beamlets. The apparatus includes a charged particle source for generating a diverging charged particle beam, a beam splitter for splitting the charged particle beam in an array of charged particle beamlets, a deflector array includes an array of deflectors including one deflector for each charged particle beamlet of said array of charged particle beamlets, wherein the deflector array is configured for substantially collimating the array of diverging charged particle beamlets. The apparatus further includes a beam manipulation device configured for generating electric and/or magnetic fields at least in an area between the charged particle source and the deflector array. The apparatus has a central axis, and the beam manipulation device is configured for generating electric and/or magnetic fields substantially parallel to the central axis and substantially perpendicular to the central axis.

    ELECTRON BEAM SYSTEM
    8.
    发明公开

    公开(公告)号:US20230317404A1

    公开(公告)日:2023-10-05

    申请号:US17757133

    申请日:2022-01-26

    Inventor: Shuai LI

    CPC classification number: H01J37/1474 H01J37/10 H01J37/244 H01J37/28

    Abstract: Provided is an electron beam system, including: an electron source, configured to generate an electron beam; a first beam guide, configured to accelerate the electron beam; a second beam guide, configured to accelerate the electron beam; a first control electrode arranged between the first beam guide and the second beam guide, configured to change movement directions of backscattered electrons and secondary electrons generated by the electron beam acting on a specimen to be tested; a first detector arranged between the first beam guide and the first control electrode, configured to receive the backscattered electrons generated by the electron beam acting on the specimen to be tested. The first control electrode according to the embodiments of the present disclosure changes the movement directions of the backscattered electrons and secondary electrons generated by the electron beam generated by the electron source acting on the specimen to be tested, so that the first detector arranged between the first beam guide and the first control electrode can receive pure backscattered electrons generated by the electron beam acting on the specimen to be tested.

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