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公开(公告)号：US20240249770A1
公开(公告)日：2024-07-25
申请号：US18587872
申请日：2024-02-26
申请人： PsiQuantum Corp,
发明人： Faraz Najafi
摘要： An example memory cell includes a superconducting loop configured to receive a write current and form a persistent current that stores a data bit in the superconducting loop. The example memory cell further includes a superconducting wire coupled to the superconducting loop and configured to selectively read-out the data bit in the superconducting loop in response to a control signal. An example method of reading data from the memory cell includes receiving, at the superconducting loop, a write current to store a data bit in a superconducting loop, and forming a persistent current that circulates in the superconducting loop as a stored data bit. The example method further includes, in accordance with a control signal, transferring, via a superconducting wire of the memory cell that is coupled to the superconducting loop, at least a portion of the persistent current to an output of the memory cell.
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公开(公告)号：US11972794B2
公开(公告)日：2024-04-30
申请号：US17967778
申请日：2022-10-17
申请人： PsiQuantum Corp.
发明人： Faraz Najafi
摘要： An electronic device includes a substrate and a layer of superconducting material disposed over the substrate. The layer of superconducting material includes a first wire and a loop that is (1) distinct and separate from the first wire and (ii) capacitively coupled to the first wire while the loop and the first wire are in a superconducting state.
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公开(公告)号：US12048254B2
公开(公告)日：2024-07-23
申请号：US17071528
申请日：2020-10-15
发明人： Vivekananda P. Adiga , Martin O. Sandberg , Jeng-Bang Yau , David L. Rath , John Bruley , Cihan Kurter , Kenneth P. Rodbell , Hongwen Yan
CPC分类号： H10N60/0912 , H10N60/805 , H10N60/83 , H10N60/85
摘要： Devices, systems, methods, and/or computer-implemented methods that can facilitate protection of a substrate in a qubit device using sacrificial material are provided. According to an embodiment, a device can comprise a superconducting lead provided on a pillar of a sacrificial material provided on a substrate. The device can further comprise a collapsed superconducting junction provided on the substrate and coupled to the superconducting lead.
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公开(公告)号：US11864472B2
公开(公告)日：2024-01-02
申请号：US17373619
申请日：2021-07-12
摘要： A method for etching a surface including obtaining a structure comprising a plurality of nanowires on or above a substrate and a dielectric layer on or above the nanowires, wherein the dielectric layer comprises protrusions formed by the underlying nanowires; reacting a surface of the dielectric layer with a reactant, comprising a gas or a plasma, to form a reactive layer on the dielectric layer, wherein the reactive layer comprises a chemical compound including the reactant and elements of the dielectric layer and the reactive layer comprises sidewalls defined by the protrusions; and selectively etching the reactive layer, wherein the etching etches the protrusions laterally through the sidewalls so as to planarize the surface and remove or shrink the protrusions.
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公开(公告)号：US11690301B2
公开(公告)日：2023-06-27
申请号：US17405448
申请日：2021-08-18
申请人： Google LLC
CPC分类号： H10N60/83 , G06N10/00 , H10N60/01 , H10N69/00 , H01L21/76891 , H10N60/0912 , H10N60/10 , H10N60/855
摘要： A qubit coupling device includes: a dielectric substrate including a trench; a first superconductor layer on a surface of the dielectric substrate where an edge of the first superconductor layer extends along a first direction and at least a portion of the superconductor layer is in contact with the surface of the dielectric substrate, and where the superconductor layer is formed from a superconductor material exhibiting superconductor properties at or below a corresponding critical temperature; a length of the trench within the dielectric substrate is adjacent to and extends along an edge of the first superconductor layer in the first direction, and where the electric permittivity of the trench is less than the electric permittivity of the dielectric substrate.
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公开(公告)号：US11638391B2
公开(公告)日：2023-04-25
申请号：US17345827
申请日：2021-06-11
申请人： IMEC VZW
发明人： Boon Teik Chan , Ruoyu Li , Stefan Kubicek , Julien Jussot
摘要： A method for processing a semiconductor device with two closely space gates comprises forming a template structure, wherein the template structure includes at least one sub-structure having a dimension less than the CD. The method further comprises forming a gate layer on and around the template structure. Then, the method comprises removing the part of the gate layer formed on the template structure, and patterning the remaining gate layer into a gate structure including the two gates. Further, the method comprises selectively removing the template structure, wherein the spacing between the two gates is formed by the removed sub-structure.
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公开(公告)号：US20240332423A1
公开(公告)日：2024-10-03
申请号：US18739078
申请日：2024-06-10
申请人： Epinovatech AB
IPC分类号： H01L29/78 , G01N27/414 , G06N10/00 , H01L21/02 , H01L27/092 , H01L29/06 , H01L29/16 , H01L29/20 , H01L29/417 , H01L29/775 , H01L33/06 , H01L33/24 , H01L33/32 , H10N60/10 , H10N60/83 , H10N60/85
CPC分类号： H01L29/7851 , H01L21/02381 , H01L21/02527 , H01L21/02532 , H01L21/0254 , H01L21/02546 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L27/0924 , H01L29/0676 , H01L29/16 , H01L29/1606 , H01L29/20 , H01L29/775 , H01L33/06 , H01L33/24 , H01L33/32 , H10N60/128 , H10N60/83 , H10N60/85 , G01N27/4146 , G06N10/00 , H01L29/41791
摘要： A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.
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公开(公告)号：US12041856B2
公开(公告)日：2024-07-16
申请号：US17037191
申请日：2020-09-29
摘要： Devices, systems, methods, and/or computer-implemented methods that can facilitate a qubit device comprising a superconducting circuit provided on an encapsulated vacuum cavity are provided. According to an embodiment, a device can comprise a substrate having an encapsulated vacuum cavity provided on the substrate. The device can further comprise a superconducting circuit provided on the encapsulated vacuum cavity.
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公开(公告)号：US20240195512A1
公开(公告)日：2024-06-13
申请号：US18062883
申请日：2022-12-07
CPC分类号： H04B10/70 , G02F1/3534 , G02F1/3551 , G02F1/3556 , G02F1/365 , H01L39/08 , H01S3/094092 , G06N10/00
摘要： Devices and/or methods provided herein relate to providing conversion of photons between an optical domain and a microwave domain. An electronic structure can comprise a resonator assembly comprising a microwave resonator and an optical resonator, an optical pump waveguide that transmits an optical pump input to the resonator assembly, and an optical signal waveguide, separate from the optical pump waveguide, that transmits an optical signal relative to the resonator assembly. The electronic structure further can comprise a microwave signal waveguide that transmits a microwave signal relative to the resonator assembly. The optical pump waveguide can comprise a delay portion that delays receipt of the optical pump input to the resonator assembly through the optical pump waveguide to a time after reduction of a majority of decoherence of the resonator assembly caused by scattering of a portion of the optical pump input, which portion does not enter the optical pump waveguide.
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公开(公告)号：US20230217841A1
公开(公告)日：2023-07-06
申请号：US17986774
申请日：2022-11-14
申请人： PsiQuantum Corp.
发明人： Faraz Najafi , Syrus Ziai
IPC分类号： H10N60/83 , H01L29/861 , B32B17/10 , B32B37/26 , H01L21/683 , H01L23/24 , H01L27/12 , H10N60/01 , H10N60/20 , H10N60/30 , H10N60/82
CPC分类号： H10N60/83 , H01L29/861 , B32B17/1055 , B32B37/26 , H01L21/6835 , H01L23/24 , H01L27/1266 , H10N60/01 , H10N60/20 , H10N60/30 , H10N60/82 , H01L2221/6835 , H01L2221/68395
摘要： An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.
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