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    Scalable photon number resolving photon detector
    3.
    发明授权
    Scalable photon number resolving photon detector 有权

    公开(公告)号：US11994426B1

    公开(公告)日：2024-05-28

    申请号：US17098235

    申请日：2020-11-13

    Applicant: PsiQuantum Corp.

    Inventor： Faraz Najafi ,  Eric Dudley

    IPC: G01J1/44 ,  G01J1/42 ,  G06N10/00 ,  H10N60/30 ,  H10N60/84 ,  H10N69/00

    CPC classification number: G01J1/44 ,  G01J1/4228 ,  G06N10/00 ,  H10N60/30 ,  H10N60/84 ,  H10N69/00 ,  G01J2001/442 ,  G01J2001/4473

    Abstract: A photon counting device includes unit cells, a bias current source coupled to the unit cells, and a waveguide coupled to the unit cells. Each unit cell includes photodetector(s). Each photodetector includes superconducting component(s) and a transistor. The transistor includes a superconducting gate that is coupled in parallel with the photodetector(s), and a channel that is electrically isolated from the superconducting gate. For each unit cell, a photodetector is optically coupled to the waveguide. A superconducting component is configured to transition from the superconducting state to the non-superconducting state in response to a photon being incident upon the superconducting component while the superconducting component receives at least a portion of bias current output from the bias current source. The superconducting gate of the unit cell is configured to transition from the superconducting state to the non-superconducting state in response to the superconducting component transitioning to the non-superconducting state.

    Memory cells based on superconducting and magnetic materials and methods of their control in arrays
    4.
    发明授权
    Memory cells based on superconducting and magnetic materials and methods of their control in arrays 有权

    公开(公告)号：US11800814B1

    公开(公告)日：2023-10-24

    申请号：US17307931

    申请日：2021-05-04

    Applicant: SeeQC Inc.

    Inventor： Ivan Nevirkovets ,  Oleg Mukhanov

    IPC: G11C16/04 ,  H10N60/84 ,  G11C11/44 ,  H10N60/12 ,  H10N60/80 ,  H10N69/00

    CPC classification number: H10N60/84 ,  G11C11/44 ,  H10N60/12 ,  H10N60/805 ,  H10N69/00

    Abstract: A memory cell having a Josephson junction and a magnetic junction situated in a close proximity to the Josephson junction. The two junctions may be vertically integrated. The magnetic junction has at least two magnetic layers with different coercive forces and a non-magnetic layer therebetween, to form a spin valve or pseudo-spin valve. A magnetization direction of a magnetic layer with lower coercive force can be rotated with respect to the larger coercive force magnetic layer(s). Magnetic fields produced by appropriately configured control lines carrying electric current, or spin-polarized current through the magnetic junction, can result in rotation. The magnetic junction influences the Josephson critical current of the Josephson junction, leading to distinct values of critical current which can serve as digital logic states. The so obtained memory cell can be integrated into the large arrays containing a plurality of the cells, to enable the selective READ and WRITE operations.

    (Nb1-xTix)N SUPERCONDUCTING NANOWIRE SINGLE-PHOTON DETECTORS WITH INTEGRATED TRANSITION-METAL NITRIDE REFLECTORS
    7.
    发明申请
    (Nb1-xTix)N SUPERCONDUCTING NANOWIRE SINGLE-PHOTON DETECTORS WITH INTEGRATED TRANSITION-METAL NITRIDE REFLECTORS 有权

    公开(公告)号：US20240397834A1

    公开(公告)日：2024-11-28

    申请号：US18789404

    申请日：2024-07-30

    Applicant: HERMES-EPITEK CORPORATION

    Inventor： Shang-Jr Gwo ,  Chang-Wei Cheng

    IPC: H10N60/84 ,  G01J1/44 ,  H10N60/83 ,  H10N60/85

    Abstract: The invention provides a single-photon detector structure that includes a superconducting nanowire made from a single-crystalline and uniform superconducting film. A transparent dielectric layer and an integrated transition-metal nitride reflector are combined to collect an incident light to the superconducting nanowire. A surface-plasmon wavelength-selective surface may be further provided above the superconducting nanowire to resonantly transmits the incident light within a selective optical passband, making the single-photon detector operable in a broad wavelength range. In addition, a large area of superconducting film with a high level of film uniformity is grown to achieve the up scaling of single-photon detectors into a single-photon detector array.

    Superconducting photon detector
    8.
    发明授权
    Superconducting photon detector 有权

    公开(公告)号：US12061114B2

    公开(公告)日：2024-08-13

    申请号：US17967773

    申请日：2022-10-17

    Applicant: PsiQuantum Corp.

    Inventor： Mark Thompson ,  Faraz Najafi

    IPC: G01J1/44 ,  G01J1/04 ,  G02B6/42 ,  H10N60/84

    CPC classification number: G01J1/44 ,  G01J1/0407 ,  G02B6/4202 ,  H10N60/84 ,  G01J2001/442

    Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating superconducting photon detectors. In one aspect, a photon detector includes: (1) a first waveguide configured to guide photons from a photon source; (2) a second waveguide that is distinct and separate from the first waveguide and optically-coupled to the first waveguide; and (3) a superconducting component positioned adjacent to the second waveguide and configured to detect photons within the second waveguide.

    MEMORY CELLS BASED ON SUPERCONDUCTING AND MAGNETIC MATERIALS AND METHODS OF THEIR CONTROL IN ARRAYS
    9.
    发明公开
    MEMORY CELLS BASED ON SUPERCONDUCTING AND MAGNETIC MATERIALS AND METHODS OF THEIR CONTROL IN ARRAYS 审中-公开

    公开(公告)号：US20240057484A1

    公开(公告)日：2024-02-15

    申请号：US18492511

    申请日：2023-10-23

    Applicant: SeeQC Inc.

    Inventor： Ivan Nevirkovets ,  Oleg Mukhanov

    IPC: H10N60/84 ,  G11C11/44 ,  H10N60/12 ,  H10N60/80 ,  H10N69/00

    CPC classification number: H10N60/84 ,  G11C11/44 ,  H10N60/12 ,  H10N60/805 ,  H10N69/00

    Abstract: A memory cell having a Josephson junction and a magnetic junction in close proximity. The two junctions may be vertically integrated. The magnetic junction has at least two magnetic layers with different coercive forces and a non-magnetic layer therebetween, to form a spin valve or pseudo-spin valve. A magnetization direction of a magnetic layer with lower coercive force can be rotated with respect to the larger coercive force magnetic layer(s). Magnetic fields produced by appropriately configured control lines carrying electric current, or spin-polarized current through the magnetic junction, can result in rotation. The magnetic junction influences the Josephson critical current of the Josephson junction, leading to distinct values of critical current which can serve as digital logic states. The memory cell can be integrated into large arrays containing a plurality of the cells, to enable the selective READ and WRITE operations.

    Charging and field supplement circuit for superconducting magnets based on pulsed current
    10.
    发明授权
    Charging and field supplement circuit for superconducting magnets based on pulsed current 有权

    公开(公告)号：US11871683B2

    公开(公告)日：2024-01-09

    申请号：US18178267

    申请日：2023-03-03

    Applicant: SHANGHAI JIAO TONG UNIVERSITY

    Inventor： Xiaofen Li ,  Zhiwei Zhang ,  Zhijian Jin ,  Yanbo Bi

    IPC: H10N60/84 ,  H01F6/00

    CPC classification number: H10N60/84 ,  H01F6/008

    Abstract: A charging and field supplement circuit for superconducting magnets based on a pulsed current includes a capacitor charging circuit, an energy-storage capacitor, a capacitor discharging circuit, a superconducting magnetic energy storage circuit, and a superconducting persistent-current switch. Two output ends of the capacitor charging circuit are respectively connected to two ends of the energy-storage capacitor. Two input ends of the capacitor discharging circuit are respectively connected to the two ends of the energy-storage capacitor. Two output ends of the capacitor discharging circuit are respectively connected to two input ends of the superconducting magnetic energy storage circuit. Two output ends of the superconducting magnetic energy storage circuit are respectively connected to two input ends of the superconducting persistent-current switch. Two output ends of the superconducting persistent-current switch are configured to charge and magnetize a target superconducting magnet.

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