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    Atomic Layer-Based Surface Treatments for Infrared Detectors
    2.
    发明申请
    Atomic Layer-Based Surface Treatments for Infrared Detectors 有权

    公开(公告)号：US20230129191A1

    公开(公告)日：2023-04-27

    申请号：US18049424

    申请日：2022-10-25

    Applicant: California Institute of Technology

    Inventor： Cory J. Hill ,  Harold Frank Greer

    IPC: H01L27/146

    Abstract: Disclosed herein is a method of producing an infrared detector. In certain embodiments, the method includes: forming a planar multi-layer structure including an absorber including a superlattice structure; patterning the planar multi-layer structure; etching the planar multi-layer structure to define a plurality of pixels, the sidewalls of the plurality of pixels includes a sidewall roughness and multiple types of surface oxides; and performing a surface treatment process to the plurality of pixels in order to reduce the sidewall roughness and replace the surface oxides with a chlorinated surface morphology. The surface treatment process may reduce surface current of the infrared detector which may decrease the dark current in the infrared detector.

    Methods and systems for atomic layer etching and atomic layer deposition
    4.
    发明授权
    Methods and systems for atomic layer etching and atomic layer deposition 有权

    公开(公告)号：US11864472B2

    公开(公告)日：2024-01-02

    申请号：US17373619

    申请日：2021-07-12

    Applicant: California Institute of Technology

    Inventor： Harold Frank Greer ,  Andrew D. Beyer ,  Matthew D. Shaw ,  Daniel P. Cunnane

    IPC: H10N60/01 ,  H10N60/83

    CPC classification number: H10N60/01 ,  H10N60/83

    Abstract: A method for etching a surface including obtaining a structure comprising a plurality of nanowires on or above a substrate and a dielectric layer on or above the nanowires, wherein the dielectric layer comprises protrusions formed by the underlying nanowires; reacting a surface of the dielectric layer with a reactant, comprising a gas or a plasma, to form a reactive layer on the dielectric layer, wherein the reactive layer comprises a chemical compound including the reactant and elements of the dielectric layer and the reactive layer comprises sidewalls defined by the protrusions; and selectively etching the reactive layer, wherein the etching etches the protrusions laterally through the sidewalls so as to planarize the surface and remove or shrink the protrusions.

    ATOMIC LAYER ETCHING OF MGO-DOPED LITHIUM NIOBATE USING SEQUENTIAL EXPOSURES OF H2 AND SF6/ARGON PLASMAS
    5.
    发明申请
    ATOMIC LAYER ETCHING OF MGO-DOPED LITHIUM NIOBATE USING SEQUENTIAL EXPOSURES OF H2 AND SF6/ARGON PLASMAS 有权

    公开(公告)号：US20250120318A1

    公开(公告)日：2025-04-10

    申请号：US18908317

    申请日：2024-10-07

    Applicant: California Institute of Technology

    Inventor： Harold Frank Greer ,  Jenni Solgaard ,  Ivy Chen ,  Austin Minnich ,  Alireza Marandi ,  Ryoto Sekine

    IPC: H10N30/082 ,  H01L21/67

    Abstract: Lithium niobate (LiNbO3, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by propagation losses arising from surface roughness on the nano- and microscale. Atomic layer etching (ALE) can smooth these features and thereby increase photonic performance. In one embodiment disclosed herein, an isotropic ALE process for x-cut MgO-doped LN uses sequential exposures of H2 and SF6/Ar plasmas. We observed an etch rate of 1.59±0.02 nm/cycle with a synergy of 96.9%. ALE can be achieved with SF6/O2 or Cl2/BCl3 plasma exposures in place of the SF6/Ar plasma step with synergies of 99.5% and 91.5% respectively. The process decreased the sidewall surface roughness of TFLN waveguides etched by physical Ar+ milling by 30% without additional wet processing.

    METHODS AND SYSTEMS FOR ATOMIC LAYER ETCHING AND ATOMIC LAYER DEPOSITION
    8.
    发明申请
    METHODS AND SYSTEMS FOR ATOMIC LAYER ETCHING AND ATOMIC LAYER DEPOSITION 有权

    公开(公告)号：US20220013706A1

    公开(公告)日：2022-01-13

    申请号：US17373619

    申请日：2021-07-12

    Applicant: California Institute of Technology

    Inventor： Harold Frank Greer ,  Andrew D. Beyer ,  Matthew D. Shaw ,  Daniel P. Cunnane

    IPC: H01L39/24 ,  H01L39/08

    Abstract: A method for etching a surface including obtaining a structure comprising a plurality of nanowires on or above a substrate and a dielectric layer on or above the nanowires, wherein the dielectric layer comprises protrusions formed by the underlying nanowires; reacting a surface of the dielectric layer with a reactant, comprising a gas or a plasma, to form a reactive layer on the dielectric layer, wherein the reactive layer comprises a chemical compound including the reactant and elements of the dielectric layer and the reactive layer comprises sidewalls defined by the protrusions; and selectively etching the reactive layer, wherein the etching etches the protrusions laterally through the sidewalls so as to planarize the surface and remove or shrink the protrusions.

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