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公开(公告)号：US11935748B2
公开(公告)日：2024-03-19
申请号：US16640411
申请日：2017-12-07
Applicant: Google LLC
Inventor： Anthony Edward Megrant
IPC: G03F7/09 , H01L21/027 , H01L21/3213
CPC classification number: H01L21/0274 , G03F7/094 , H01L21/32139
Abstract: A method of fabricating a device is presented. The method includes forming a multilayer stack (101′, 102′, 103′) on a substrate (10′, 100′) which has a principal surface. The multilayer stack includes a supporting layer (102′) formed over the principal surface of the substrate and a photoresist layer (103′) formed on the supporting layer, patterning the multilayer stack to form at least one opening such that the photoresist layer is undercut by the supporting layer and anisotropically dry etching the substrate.
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公开(公告)号：US20210384401A1
公开(公告)日：2021-12-09
申请号：US17405373
申请日：2021-08-18
Applicant: Google LLC
Inventor： Anthony Edward Megrant
Abstract: A qubit coupling device includes: a dielectric substrate including a trench; a first superconductor layer on a surface of the dielectric substrate where an edge of the first superconductor layer extends along a first direction and at least a portion of the superconductor layer is in contact with the surface of the dielectric substrate, and where the superconductor layer is formed from a superconductor material exhibiting superconductor properties at or below a corresponding critical temperature; a length of the trench within the dielectric substrate is adjacent to and extends along an edge of the first superconductor layer in the first direction, and where the electric permittivity of the trench is less than the electric permittivity of the dielectric substrate.
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公开(公告)号：US20210182728A1
公开(公告)日：2021-06-17
申请号：US17271323
申请日：2019-08-27
Applicant: Google LLC
Inventor： Charles Neill , Anthony Edward Megrant
IPC: G06N10/00 , H03K19/173
Abstract: Methods, systems and apparatus for implementing two-qubit gates using a tunable coupler. In one aspect, a method of implementing a two-qubit gate includes: applying a unitary transformation control signal to a tunable coupler arranged between a first data qubit and a second data qubit to obtain a target unitary transformation of the first data qubit and the second data qubit, w'herein the unitary transformation control signal is applied to the tunable coupler over a predetermined period of time to allow coupling between the first data qubit and the second data qubit through the tunable coupler.
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公开(公告)号：US10957841B2
公开(公告)日：2021-03-23
申请号：US16333505
申请日：2016-09-15
Applicant: Google LLC
Inventor： Anthony Edward Megrant
Abstract: A method of fabricating an electrical contact junction that allows current to flow includes: providing a substrate including a first layer of superconductor material; removing a native oxide of the superconductor material of the first layer from a first region of the first layer; forming a capping layer in contact with the first region of the first layer, in which the capping layer prevents reformation of the native oxide of the superconductor material in the first region; forming, after forming the capping layer, a second layer of superconductor material that electrically connects to the first region of the first layer of superconductor material to provide the electrical contact junction that allows current to flow.
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公开(公告)号：US20200381609A1
公开(公告)日：2020-12-03
申请号：US16640399
申请日：2017-12-07
Applicant: Google LLC
Inventor： Anthony Edward Megrant
Abstract: A method for forming at least part of a quantum information processing device is presented. The method includes providing a first electrically-conductive layer formed of a first electrically-conductive material (100′) on a principal surface of a substrate (10), depositing a layer of dielectric material on the first electrically-conductive material, patterning the layer of dielectric material to form a pad of dielectric material and to reveal a first region of the first electrically-conductive layer, depositing a second electrically-conductive layer (104′) on the pad of dielectric material and on the first region of the first electrically-conductive layer, patterning the second electrically-conductive layer and removing the pad of dielectric material using isotropic gas phase etching.
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Patent Agency Ranking
公开(公告)号：US20190341540A1
公开(公告)日：2019-11-07
申请号：US16473779
申请日：2017-12-15
Applicant: Google LLC
Inventor： Anthony Edward Megrant
Abstract: A qubit coupling device includes: a dielectric substrate including a trench; a first superconductor layer on a surface of the dielectric substrate where an edge of the first superconductor layer extends along a first direction and at least a portion of the superconductor layer is in contact with the surface of the dielectric substrate, and where the superconductor layer is formed from a superconductor material exhibiting superconductor properties at or below a corresponding critical temperature; a length of the trench within the dielectric substrate is adjacent to and extends along an edge of the first superconductor layer in the first direction, and where the electric permittivity of the trench is less than the electric permittivity of the dielectric substrate.
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7.发明授权公开(公告)号：US10403808B2
公开(公告)日：2019-09-03
申请号：US16066640
申请日：2015-12-30
Applicant: Google LLC
Inventor： Anthony Edward Megrant
Abstract: A method includes: providing a first wafer including a first substrate, a first insulator layer on the first substrate, and a first dielectric layer on the first insulator layer; providing a second wafer including a second substrate, a second insulator layer on the second substrate, and a second dielectric layer on the second insulator layer; forming a first superconductor layer on the first dielectric layer; forming a second superconductor layer on the second dielectric layer; joining a surface of the first superconductor layer to a surface of the second superconductor layer to form a wafer stack; and forming a third superconductor layer on exposed first surface of the first dielectric layer.
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8.发明申请公开(公告)号：US20190027672A1
公开(公告)日：2019-01-24
申请号：US16066640
申请日：2015-12-30
Applicant: Google LLC
Inventor： Anthony Edward Megrant
Abstract: A method includes: providing a first wafer including a first substrate, a first insulator layer on the first substrate, and a first dielectric layer on the first insulator layer; providing a second wafer including a second substrate, a second insulator layer on the second substrate, and a second dielectric layer on the second insulator layer; forming a first superconductor layer on the first dielectric layer; forming a second superconductor layer on the second dielectric layer; joining a surface of the first superconductor layer to a surface of the second superconductor layer to form a wafer stack; and forming a third superconductor layer on exposed first surface of the first dielectric layer.
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公开(公告)号：US12288687B2
公开(公告)日：2025-04-29
申请号：US18438142
申请日：2024-02-09
Applicant: Google LLC
Inventor： Anthony Edward Megrant
IPC: G03F7/09 , H01L21/027 , H01L21/3213
Abstract: A method of fabricating a device is presented. The method includes forming a multilayer stack on a substrate which has a principal surface. The multilayer stack includes a supporting layer formed over the principal surface of the substrate and a photoresist layer formed on the supporting layer, patterning the multilayer stack to form at least one opening such that the photoresist layer is undercut by the supporting layer and anisotropically dry etching the substrate.
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公开(公告)号：US12260297B2
公开(公告)日：2025-03-25
申请号：US17271323
申请日：2019-08-27
Applicant: Google LLC
Inventor： Charles Neill , Anthony Edward Megrant
IPC: G06N10/40 , G06N10/70 , H03K19/173 , H03K19/195
Abstract: Methods, systems and apparatus for implementing two-qubit gates using a tunable coupler. In one aspect, a method of implementing a two-qubit gate includes: applying a unitary transformation control signal to a tunable coupler arranged between a first data qubit and a second data qubit to obtain a target unitary transformation of the first data qubit and the second data qubit, wherein the unitary transformation control signal is applied to the tunable coupler over a predetermined period of time to allow coupling between the first data qubit and the second data qubit through the tunable coupler.
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