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公开(公告)号：US12027989B2
公开(公告)日：2024-07-02
申请号：US17755142
申请日：2020-10-22
申请人： Epinovatech AB
IPC分类号： H02M3/158 , B60L50/60 , B60L53/24 , H01L29/778 , H02J7/02 , H02M1/00 , H02M7/06 , H02M7/21 , H02M7/217 , H03K17/10 , H03K17/16
CPC分类号： H02M7/217 , B60L50/60 , B60L53/24 , H01L29/778 , H02J7/02 , H02M1/0048 , H02M3/158 , H02M7/06 , H02M7/21 , H03K17/102 , H03K17/163 , B60L2210/30 , B60L2210/40 , H01M2220/20 , H01M2220/30 , H02M1/0045 , H02M1/007
摘要： There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.
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公开(公告)号：US20220302293A1
公开(公告)日：2022-09-22
申请号：US17806400
申请日：2022-06-10
申请人： Epinovatech AB
IPC分类号： H01L29/778 , H01L29/205 , H01L29/20 , H01L29/04 , H01L29/66 , H01L29/06
摘要： There is provided a semiconductor layer structure (100) comprising: a Si substrate (102) having a top surface (104); a first semiconductor layer (110) arranged on said substrate, the first semiconductor layer comprising a plurality of vertical nanowire structures (112) arranged perpendicularly to said top surface of said substrate, the first semiconductor layer comprising AlN; a second semiconductor layer (120) arranged on said first semiconductor layer laterally and vertically enclosing said nanowire structures, the second semiconductor layer comprising AlxGa1-xN, wherein 0≤x≤0.95; a third semiconductor layer (130) arranged on said second semiconductor layer, the third semiconductor layer comprising AlyGa1-yN, wherein 0≤y≤0.95; and a fourth semiconductor layer (140) arranged on said third semiconductor layer, the fourth semiconductor layer comprising GaN. There is also provided a high-electron-mobility transistor device and methods of producing such structures and devices.
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公开(公告)号：US20210265632A1
公开(公告)日：2021-08-26
申请号：US17302907
申请日：2021-05-14
申请人： Epinovatech AB
摘要： There is provided a solid-state battery layer structure which may include an anode current collector metal layer, an anode layer arranged on the anode current collector metal layer, a solid electrolyte layer arranged on the anode layer laterally, a cathode layer arranged on the solid electrolyte layer, and a cathode current collector metal layer, and a plurality of nanowire structures comprising silicon and/or gallium nitride, wherein said nanowire structures are arranged on the anode layer and, wherein said nanowire structures are laterally and vertically enclosed by the solid electrolyte layer, wherein the anode layer comprises silicon and a plurality of metal vias connecting the plurality of nanowire structures with the anode current collector metal layer. Methods for producing solid-state battery layer structures are also provided.
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公开(公告)号：US12009431B2
公开(公告)日：2024-06-11
申请号：US17929440
申请日：2022-09-02
申请人： Epinovatech AB
IPC分类号： H01L29/78 , H01L21/02 , H01L27/092 , H01L29/06 , H01L29/16 , H01L29/20 , H01L29/775 , H01L33/06 , H01L33/24 , H01L33/32 , H10N60/10 , H10N60/83 , H10N60/85 , G01N27/414 , G06N10/00 , H01L29/417
CPC分类号： H01L29/7851 , H01L21/02381 , H01L21/02527 , H01L21/02532 , H01L21/0254 , H01L21/02546 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L27/0924 , H01L29/0676 , H01L29/16 , H01L29/1606 , H01L29/20 , H01L29/775 , H01L33/06 , H01L33/24 , H01L33/32 , H10N60/128 , H10N60/83 , H10N60/85 , G01N27/4146 , G06N10/00 , H01L29/41791
摘要： A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.
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公开(公告)号：US20230352575A1
公开(公告)日：2023-11-02
申请号：US17999605
申请日：2021-05-27
申请人： Epinovatech AB
IPC分类号： H01L29/778 , H01L29/06 , H01L29/66
CPC分类号： H01L29/7788 , H01L29/0676 , H01L29/66462 , H01L29/66469 , H01L29/0646 , H01L29/2003
摘要： There is provided a vertical high-electron-mobility transistor, HEMT (100), comprising: a drain contact (410), a nanowire layer (500) arranged on the drain contact (410) and comprising at least one vertical nanowire (510) and a supporting material (520) laterally enclosing the at least one vertical nanowire (510), a heterostructure (600) arranged on the nanowire layer and comprising an AIGaN-layer (610) and a GaN-layer (620) together forming a heterojunction, at least one source contact (420a, 420b) in contact with the heterostructure (600), and a gate contact (430) in contact with the heterostructure (600), arranged above the at least one vertical nanowire (510), wherein the at least one vertical nanowire (510) is forming an electron transport channel between the drain contact and the heterostructure. There is also provided a method for producing a vertical HEMT (100).
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公开(公告)号：US20220416025A1
公开(公告)日：2022-12-29
申请号：US17929440
申请日：2022-09-02
申请人： Epinovatech AB
IPC分类号： H01L29/06 , H01L29/20 , H01L27/092 , H01L39/08 , H01L21/02 , H01L33/32 , H01L29/16 , H01L29/775 , H01L39/22 , H01L33/06 , H01L33/24 , H01L39/12 , G06N10/00 , G01N27/414
摘要： A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.
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公开(公告)号：US20220399826A1
公开(公告)日：2022-12-15
申请号：US17755142
申请日：2020-10-22
申请人： Epinovatech AB
IPC分类号： H02M7/217 , H02J7/02 , B60L50/60 , B60L53/24 , H02M1/00 , H01L29/778 , H01M50/204
摘要： There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.
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公开(公告)号：US11469300B2
公开(公告)日：2022-10-11
申请号：US17049535
申请日：2019-04-23
申请人： Epinovatech AB
IPC分类号： H01L29/06 , H01L21/02 , H01L27/092 , H01L29/16 , H01L29/20 , H01L29/775 , H01L33/06 , H01L33/24 , H01L33/32 , H01L39/08 , H01L39/12 , H01L39/22 , G06N10/00 , G01N27/414
摘要： A reinforced thin-film device (100, 200, 500) including a substrate (101) having a top surface for supporting an epilayer; a mask layer (103) patterned with a plurality of nanosize cavities (102, 102′) disposed on said substrate (101) to form a needle pad; a thin-film (105) of lattice-mismatched semiconductor disposed on said mask layer (103), wherein said thin-film (105) comprises a plurality of in parallel spaced semiconductor needles (104, 204) of said lattice-mismatched semiconductor embedded in said thin-film (105), wherein said plurality of semiconductor needles (104, 204) are substantially vertically disposed in the axial direction toward said substrate (101) in said plurality of nanosize cavities (102, 102′) of said mask layer (103), and where a lattice-mismatched semiconductor epilayer (106) is provided on said thin-film supported thereby.
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公开(公告)号：US20240363693A1
公开(公告)日：2024-10-31
申请号：US18292860
申请日：2022-07-12
申请人： Epinovatech AB
IPC分类号： H01L29/201 , H01L21/02 , H01L27/092 , H01L29/20 , H01L29/66 , H01L29/775 , H01L29/78
CPC分类号： H01L29/201 , H01L21/0254 , H01L29/2003 , H01L27/0928 , H01L29/66477 , H01L29/775 , H01L29/78
摘要： A transistor (1) comprising a source (10), a body (12) and a drain (14), the transistor (1) further comprising a plurality of semiconductor layers (20), wherein layers of the plurality of semiconductor layers (20) are made of AlGaN or GaN, and wherein the plurality of semiconductor layers (20) is configured such that an aluminum content changes between each consecutive layer such that every second layer has a lower aluminum content than the neighboring mutually opposite layers thereof, wherein the transistor (1) is either a N-channel metal-oxide-semiconductor, NMOS, transistor (1′), wherein part of the plurality of semiconductor layers (20) is p-doped and forms part of the body (12) of the NMOS transistor (1′); or a P-channel metal-oxide-semiconductor, PMOS, transistor (1″), wherein part of the plurality of semiconductor layers (20) is p-doped and forms part of the source (10) or the drain (14) of the PMOS transistor (1″).
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公开(公告)号：US20240356456A1
公开(公告)日：2024-10-24
申请号：US18761211
申请日：2024-07-01
申请人： Epinovatech AB
IPC分类号： H02M7/217 , B60L50/60 , B60L53/24 , H01L29/778 , H02J7/02 , H02M1/00 , H02M3/158 , H02M7/06 , H02M7/21 , H03K17/10 , H03K17/16
CPC分类号： H02M7/217 , B60L50/60 , B60L53/24 , H01L29/778 , H02J7/02 , H02M1/0048 , H02M3/158 , H02M7/06 , H02M7/21 , H03K17/102 , H03K17/163 , B60L2210/30 , B60L2210/40 , H01M2220/20 , H01M2220/30 , H02M1/0045 , H02M1/007
摘要： There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.
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