公开(公告)号：US07834454B2

公开(公告)日：2010-11-16

申请号：US12194999

申请日：2008-08-20

Applicant: Glenn A. Rinne ,  J. Daniel Mis

Inventor： Glenn A. Rinne ,  J. Daniel Mis

IPC: H01L23/48

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05557 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/062 ,  H05K3/243 ,  H05K2201/0367 ,  H05K2201/09436 ,  H05K2203/054 ,  H05K2203/0723 ,  H01L2924/00014 ,  H01L2924/013

Abstract: Forming an electronic structure may include forming a seed layer on a substrate, and forming a mask on the seed layer. The mask may include an aperture therein exposing a portion of the seed layer, and a barrier layer may be formed on the exposed portion of the seed layer. A bump may be formed on the barrier layer, and the mask may be removed. In addition, portions of the seed layer may be selectively removed using the barrier layer as an etch mask.

Abstract translation: 形成电子结构可以包括在基底上形成种子层，并在种子层上形成掩模。 掩模可以包括其中露出种子层的一部分的孔，并且阻挡层可以形成在种子层的暴露部分上。 可以在阻挡层上形成凸起，并且可以去除掩模。 此外，可以使用阻挡层作为蚀刻掩模来选择性地去除种子层的部分。

公开(公告)号：US20060270108A1

公开(公告)日：2006-11-30

申请号：US11497699

申请日：2006-08-02

Applicant: Warren Farnworth ,  Alan Wood ,  William Hiatt ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Pete Benson

Inventor： Warren Farnworth ,  Alan Wood ,  William Hiatt ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Pete Benson

IPC: H01L21/00

CPC classification number: H01L21/561 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/207 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A method for fabricating a semiconductor component includes the steps of providing a substrate having a contact on a circuit side thereof, forming an opening from a backside of the substrate to the contact, forming a conductive via in the opening in electrical contact with a surface of the contact, and forming a second contact on the back side in electrical communication with the conductive via. The method can also include the steps of thinning the substrate from the backside, forming insulating layers on the circuit side and the backside, and forming a conductor and terminal contact on the circuit side in electrical communication with the conductive via. A semiconductor component includes the contact on the circuit side, the conductive via in electrical contact with the contact, and the second contact on the backside in electrical communication with the conductive via. The semiconductor component can also include the insulating layers, the conductor and the terminal contact.

Abstract translation: 一种制造半导体部件的方法包括以下步骤：提供在其电路侧具有接触的基板，从基板的背面形成开口到触点，在开口中形成导电通孔，该导电通孔与 接触，并且在背面形成与导电通孔电连通的第二接触。 该方法还可以包括从背面减薄衬底的步骤，在电路侧和背面形成绝缘层，以及在电路侧上形成与导电通孔电连通的导体和端子触点。 半导体部件包括电路侧的触点，与触点电接触的导电通孔以及与导电通路电气连通的背侧的第二触点。 半导体部件还可以包括绝缘层，导体和端子触头。

公开(公告)号：US06998717B2

公开(公告)日：2006-02-14

申请号：US10962931

申请日：2004-10-11

Applicant: Warren M. Farnworth ,  Alan G. Wood ,  William M. Hiatt ,  James M. Wark ,  David R. Hembree ,  Kyle K. Kirby ,  Pete A. Benson

Inventor： Warren M. Farnworth ,  Alan G. Wood ,  William M. Hiatt ,  James M. Wark ,  David R. Hembree ,  Kyle K. Kirby ,  Pete A. Benson

IPC: H01L29/40

CPC classification number: H01L21/561 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/207 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A semiconductor component includes a base die and a secondary die stacked on and bonded to the base die. The base die includes conductive vias which form an internal signal transmission system for the component, and allow the circuit side of the secondary die to be bonded to the back side of the base die. The component also includes an array of terminal contacts on the circuit side of the base die in electrical communication with the conductive vias. The component can also include an encapsulant on the back side of the base die, which substantially encapsulates the secondary die, and a polymer layer on the circuit side of the base die which functions as a protective layer, a rigidifying member and a stencil for forming the terminal contacts. A method for fabricating the component includes the step of bonding singulated secondary dice to base dice on a base wafer, or bonding a secondary wafer to the base wafer, or bonding singulated secondary dice to singulated base dice.

Abstract translation: 半导体部件包括基模和层叠在基模上的二次模。 基模具包括形成用于部件的内部信号传输系统的导电通孔，并允许二次管芯的电路侧接合到基座的后侧。 该组件还包括与导电通孔电连通的基座芯片的电路侧上的端子触点阵列。 该组件还可以包括在基模的背侧上的密封剂，其基本上封装次模，以及在用作保护层的基模的电路侧上的聚合物层，用于形成的用于固化的模板 终端接触。 一种用于制造该部件的方法包括将单个二次骰子接合到基底晶片上的基底骰子上，或将次晶片接合到基底晶片，或将单个二次骰子接合到单个基体骰子的步骤。

公开(公告)号：US07498675B2

公开(公告)日：2009-03-03

申请号：US11701927

申请日：2007-02-02

Applicant: Warren M. Farnworth ,  Alan G. Wood ,  William M. Hiatt ,  James M. Wark ,  David R. Hembree ,  Kyle K. Kirby ,  Pete A. Benson

Inventor： Warren M. Farnworth ,  Alan G. Wood ,  William M. Hiatt ,  James M. Wark ,  David R. Hembree ,  Kyle K. Kirby ,  Pete A. Benson

IPC: H01L23/34

CPC classification number: H01L21/561 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/207 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A semiconductor component includes a base die and a secondary die stacked on and bonded to the base die. The base die includes conductive vias which form an internal signal transmission system for the component, and allow the circuit side of the secondary die to be bonded to the back side of the base die. The component also includes an array of terminal contacts on the circuit side of the base die in electrical communication with the conductive vias. The component can also include an encapsulant on the back side of the base die, which substantially encapsulates the secondary die, and a polymer layer on the circuit side of the base die which functions as a protective layer, a rigidifying member and a stencil for forming the terminal contacts. A method for fabricating the component includes the step of bonding singulated secondary dice to base dice on a base wafer, or bonding a secondary wafer to the base wafer, or bonding singulated secondary dice to singulated base dice.

Abstract translation: 半导体部件包括基模和层叠在基模上的二次模。 基模具包括形成用于部件的内部信号传输系统的导电通孔，并允许二次管芯的电路侧接合到基座的后侧。 该组件还包括与导电通孔电连通的基座芯片的电路侧上的端子触点阵列。 该组件还可以包括在基模的背侧上的密封剂，其基本上封装次模，以及在用作保护层的基模的电路侧上的聚合物层，用于形成的用于固化的模板 终端接触。 一种用于制造该部件的方法包括将单个二次骰子接合到基底晶片上的基底骰子上，或将次晶片接合到基底晶片，或将单个二次骰子接合到单个基体骰子的步骤。

公开(公告)号：US20070037337A1

公开(公告)日：2007-02-15

申请号：US11500717

申请日：2006-08-08

Applicant: Hidekazu Takahashi ,  Eiji Sugiyama

Inventor： Hidekazu Takahashi ,  Eiji Sugiyama

IPC: H01L21/8234 ,  H01L21/336

CPC classification number: H01L21/84 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68386 ,  H01L2223/6677 ,  H01L2224/0332 ,  H01L2224/0355 ,  H01L2224/0391 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05173 ,  H01L2224/05178 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05188 ,  H01L2224/05339 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05839 ,  H01L2224/05844 ,  H01L2224/05847 ,  H01L2224/32225 ,  H01L2224/83 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/07802 ,  H01L2924/12044 ,  H01L2924/13069 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device of the present invention is provided including the steps of forming a first conductive layer over a substrate; forming a second conductive layer containing a conductive particle and resin over the first conductive layer; and increasing an area where the first conductive layer and the second conductive layer are in contact with each other by irradiating the second conductive layer with a laser beam. By including the step of laser beam irradiation, the portion where the first conductive layer and the second conductive layer are in contact with each other can be increased and defective electrical connection between the first conductive layer and the second conductive layer can be improved.

Abstract translation: 提供本发明的半导体器件的制造方法，其特征在于包括：在基板上形成第一导电层的工序; 在所述第一导电层上形成包含导电粒子和树脂的第二导电层; 以及通过用激光束照射第二导电层来增加第一导电层和第二导电层彼此接触的面积。 通过包括激光束照射的步骤，可以增加第一导电层和第二导电层彼此接触的部分，并且可以提高第一导电层和第二导电层之间的有缺陷的电连接。

公开(公告)号：US07060526B2

公开(公告)日：2006-06-13

申请号：US10730333

申请日：2003-12-08

Applicant: Warren M. Farnworth ,  Alan G. Wood ,  William M. Hiatt ,  James M. Wark ,  David R. Hembree ,  Kyle K. Kirby ,  Pete A. Benson

Inventor： Warren M. Farnworth ,  Alan G. Wood ,  William M. Hiatt ,  James M. Wark ,  David R. Hembree ,  Kyle K. Kirby ,  Pete A. Benson

IPC: H01L21/44

CPC classification number: H01L21/561 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/207 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A semiconductor component includes a base die and a secondary die stacked on and bonded to the base die. The base die includes conductive vias which form an internal signal transmission system for the component, and allow the circuit side of the secondary die to be bonded to the back side of the base die. The component also includes an array of terminal contacts on the circuit side of the base die in electrical communication with the conductive vias. The component can also include an encapsulant on the back side of the base die, which substantially encapsulates the secondary die, and a polymer layer on the circuit side of the base die which functions as a protective layer, a rigidifying member and a stencil for forming the terminal contacts. A method for fabricating the component includes the step of bonding singulated secondary dice to base dice on a base wafer, or bonding a secondary wafer to the base wafer, or bonding singulated secondary dice to singulated base dice.

Abstract translation: 半导体部件包括基模和层叠在基模上的二次模。 基模具包括形成用于部件的内部信号传输系统的导电通孔，并允许二次管芯的电路侧接合到基座的后侧。 该组件还包括与导电通孔电连通的基座芯片的电路侧上的端子触点阵列。 该组件还可以包括在基模的背侧上的密封剂，其基本上封装次模，以及在用作保护层的基模的电路侧上的聚合物层，用于形成的用于固化的模板 终端接触。 一种用于制造该部件的方法包括将单个二次骰子接合到基底晶片上的基底骰子上，或将次晶片接合到基底晶片，或将单个二次骰子接合到单个基体骰子的步骤。

公开(公告)号：US20050215045A1

公开(公告)日：2005-09-29

申请号：US11075474

申请日：2005-03-09

Applicant: Glenn Rinne ,  J. Mis

Inventor： Glenn Rinne ,  J. Mis

IPC: H01L21/44 ,  H01L21/60 ,  H01L23/485 ,  H05K3/06 ,  H05K3/24

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05557 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/062 ,  H05K3/243 ,  H05K2201/0367 ,  H05K2201/09436 ,  H05K2203/054 ,  H05K2203/0723 ,  H01L2924/00014 ,  H01L2924/013

Abstract: Forming an electronic structure may include forming a seed layer on a substrate, and forming a mask on the seed layer. The mask may include an aperture therein exposing a portion of the seed layer, and a barrier layer may be formed on the exposed portion of the seed layer. A bump may be formed on the barrier layer, and the mask may be removed. In addition, portions of the seed layer may be selectively removed using the barrier layer as an etch mask.

Abstract translation: 形成电子结构可以包括在基底上形成种子层，并在种子层上形成掩模。 掩模可以包括其中露出种子层的一部分的孔，并且阻挡层可以形成在种子层的暴露部分上。 可以在阻挡层上形成凸起，并且可以去除掩模。 此外，可以使用阻挡层作为蚀刻掩模来选择性地去除种子层的部分。

公开(公告)号：US06841883B1

公开(公告)日：2005-01-11

申请号：US10403937

申请日：2003-03-31

Applicant: Warren M. Farnworth ,  Alan G. Wood ,  William M. Hiatt ,  James M. Wark ,  David R. Hembree ,  Kyle K. Kirby ,  Pete A. Benson

Inventor： Warren M. Farnworth ,  Alan G. Wood ,  William M. Hiatt ,  James M. Wark ,  David R. Hembree ,  Kyle K. Kirby ,  Pete A. Benson

IPC: H01L21/56 ,  H01L21/60 ,  H01L21/768 ,  H01L21/98 ,  H01L23/31 ,  H01L23/48 ,  H01L25/065 ,  H01L29/40

CPC classification number: H01L21/561 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/207 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A semiconductor component includes a base die and a secondary die stacked on and bonded to the base die. The base die includes conductive vias which form an internal signal transmission system for the component, and allow the circuit side of the secondary die to be bonded to the back side of the base die. The component also includes an array of terminal contacts on the circuit side of the base die in electrical communication with the conductive vias. The component can also include an encapsulant on the back side of the base die, which substantially encapsulates the secondary die, and a polymer layer on the circuit side of the base die which functions as a protective layer, a rigidifying member and a stencil for forming the terminal contacts. A method for fabricating the component includes the step of bonding singulated secondary dice to base dice on a base wafer, or bonding a secondary wafer to the base wafer, or bonding singulated secondary dice to singulated base dice.

Abstract translation: 半导体部件包括基模和层叠在基模上的二次模。 基模具包括形成用于部件的内部信号传输系统的导电通孔，并允许二次管芯的电路侧接合到基座的后侧。 该组件还包括与导电通孔电连通的基座芯片的电路侧上的端子触点阵列。 该组件还可以包括在基模的背侧上的密封剂，其基本上封装次模，以及在用作保护层的基模的电路侧上的聚合物层，用于形成的用于固化的模板 终端接触。 一种用于制造该部件的方法包括将单个二次骰子接合到基底晶片上的基底骰子上，或将次晶片接合到基底晶片，或将单个二次骰子接合到单个基体骰子的步骤。

公开(公告)号：US20240071973A1

公开(公告)日：2024-02-29

申请号：US18502389

申请日：2023-11-06

Applicant: Micron Technology, Inc.

Inventor： Wei Zhou

IPC: H01L23/00

CPC classification number: H01L24/16 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05183 ,  H01L2224/05184 ,  H01L2224/05541 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/11845 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/1318 ,  H01L2224/13181 ,  H01L2224/13183 ,  H01L2224/13184 ,  H01L2224/13565 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32145 ,  H01L2224/73103 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/07025

Abstract: A semiconductor device assembly, comprising a first semiconductor device including a first substrate with a frontside surface, a plurality of solder bumps located on the frontside surface of the first substrate, and a first polymer layer on the frontside surface. The semiconductor device assembly also comprises a second semiconductor device including a second substrate with a backside surface, a plurality of TSVs protruding from the backside surface of the second substrate, and a second polymer layer on the backside surface of the first substrate, the second polymer layer having a plurality of openings corresponding to the plurality of TSVs. The first and second semiconductor devices are bonded such that the first polymer layer contacts the second polymer layer and each of the plurality of solder bumps extends into a corresponding one of the plurality of openings and contacts a corresponding one of the plurality of TSVs.

公开(公告)号：US20230282605A1

公开(公告)日：2023-09-07

申请号：US17684292

申请日：2022-03-01

Applicant: Micron Technology, Inc.

Inventor： Wei Zhou

IPC: H01L23/00

CPC classification number: H01L24/16 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/11 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/05541 ,  H01L2224/13009 ,  H01L2224/14181 ,  H01L2224/13565 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/11845 ,  H01L2224/11849 ,  H01L2224/16146 ,  H01L24/32 ,  H01L2224/32145 ,  H01L24/73 ,  H01L2224/73103 ,  H01L24/29 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/1318 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13181 ,  H01L2224/13169 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13183 ,  H01L2224/13173 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/0518 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05169 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05176 ,  H01L2224/05178 ,  H01L2224/05183 ,  H01L2224/05173 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2924/0665 ,  H01L2924/0635 ,  H01L2924/07025

Abstract: A semiconductor device assembly, comprising a first semiconductor device including a first substrate with a frontside surface, a plurality of solder bumps located on the frontside surface of the first substrate, and a first polymer layer on the frontside surface. The semiconductor device assembly also comprises a second semiconductor device including a second substrate with a backside surface, a plurality of TSVs protruding from the backside surface of the second substrate, and a second polymer layer on the backside surface of the first substrate, the second polymer layer having a plurality of openings corresponding to the plurality of TSVs. The first and second semiconductor devices are bonded such that the first polymer layer contacts the second polymer layer and each of the plurality of solder bumps extends into a corresponding one of the plurality of openings and contacts a corresponding one of the plurality of TSVs.