公开(公告)号：US07994043B1

公开(公告)日：2011-08-09

申请号：US12108909

申请日：2008-04-24

申请人： J. Daniel Mis ,  Glenn A. Rinne

发明人： J. Daniel Mis ,  Glenn A. Rinne

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03472 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/05564 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11502 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/04941 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method includes forming a patterned resist layer comprising a resist layer opening overlying a bond pad of a substrate. The resist layer opening is at least partially filled with a first solder component layer. A second solder component layer is formed on the first solder component layer. The patterned resist layer is removed. The first solder component layer and the second solder component layer are reflowed to form a lead free binary metal alloy solder bump electrically connected to the bond pad.

摘要翻译： 一种方法包括形成图案化的抗蚀剂层，其包括开口覆盖在基底的接合焊盘上的抗蚀层。 抗蚀剂层开口至少部分地填充有第一焊料组分层。 在第一焊料组分层上形成第二焊料组分层。 去除图案化的抗蚀剂层。 第一焊料组分层和第二焊料组分层被回流以形成电连接到焊盘的无铅二元金属合金焊料凸块。

公开(公告)号：US20110037171A1

公开(公告)日：2011-02-17

申请号：US12907430

申请日：2010-10-19

申请人： Glenn A. Rinne ,  J. Daniel Mis

发明人： Glenn A. Rinne ,  J. Daniel Mis

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05557 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/062 ,  H05K3/243 ,  H05K2201/0367 ,  H05K2201/09436 ,  H05K2203/054 ,  H05K2203/0723 ,  H01L2924/00014 ,  H01L2924/013

摘要： An electronic device may include a substrate, a seed layer on the substrate, a barrier layer on the seed layer opposite the substrate, and an oxidation barrier on the barrier layer opposite the seed layer. The barrier layer and the seed layer comprise different materials, and the oxidation barrier and the barrier layer may comprise different materials. The seed layer may be undercut relative to the barrier layer and/or relative to the oxidation barrier so that the barrier layer and/or the oxidation barrier define a lip extending beyond the seed layer in a direction parallel with respect to a surface of the substrate. Related methods are also discussed.

摘要翻译： 电子器件可以包括衬底，衬底上的种子层，与衬底相对的种子层上的阻挡层以及与种子层相对的阻挡层上的氧化屏障。 阻挡层和种子层包含不同的材料，氧化屏障和阻挡层可以包括不同的材料。 种子层可以相对于阻挡层和/或相对于氧化屏障而被切削，使得阻挡层和/或氧化屏障在相对于衬底的表面平行的方向上限定延伸超过种子层的唇缘 。 还讨论了相关方法。

公开(公告)号：US07659621B2

公开(公告)日：2010-02-09

申请号：US11362964

申请日：2006-02-27

申请人： Glenn A. Rinne

发明人： Glenn A. Rinne

IPC分类号： H01L23/48

CPC分类号： H01L23/48 ,  H01L21/44 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02175 ,  H01L2224/0401 ,  H01L2224/05555 ,  H01L2224/10145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13006 ,  H01L2224/13017 ,  H01L2224/13027 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H05K3/3442 ,  H05K2201/09381 ,  H05K2201/10674 ,  H05K2203/0465 ,  Y02P70/613 ,  H01L2224/11 ,  H01L21/78 ,  H01L2924/01083 ,  H01L2924/01031 ,  H01L2924/01048 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00014

摘要： Methods of forming a solder structure may include providing a wafer including a plurality of die therein, and a solder wettable pad may be formed on one of the die adjacent an edge of the die. The solder wettable pad may have a length parallel to the edge of the die and a width perpendicular to the edge of the die wherein the length parallel to the edge of the die is greater than the width perpendicular to the edge of the die. A solder bump may be plated on the solder wettable pad, and the die may be separated from the wafer along the edge of the die after plating the solder bump on the solder wettable pad. Moreover, the solder bump may be reflowed on the solder wettable pad so that the solder structure extends laterally from the solder wettable pad beyond the edge of the die after separating the die from the wafer. Related structures are also discussed.

摘要翻译： 形成焊料结构的方法可以包括在其中提供包括多个管芯的晶片，并且可以在与管芯的边缘相邻的管芯中的一个上形成焊料可湿性焊盘。 焊料可湿性垫可以具有平行于管芯边缘的长度和垂直于管芯边缘的宽度，其中平行于管芯的边缘的长度大于垂直于管芯边缘的宽度。 可将焊料凸块电镀在焊料可湿性垫上，并且在将焊料凸块镀在焊料可润湿垫上之后，可以沿着模具的边缘将晶片与晶片分离。 此外，焊料凸块可以在焊料可润湿垫上回流，使得焊料结构从焊料可润湿垫横向延伸超过模具的边缘，从而将晶片与晶片分离。 还讨论了相关结构。

公开(公告)号：US20080308931A1

公开(公告)日：2008-12-18

申请号：US12194999

申请日：2008-08-20

申请人： Glenn A. Rinne ,  J. Daniel Mis

发明人： Glenn A. Rinne ,  J. Daniel Mis

IPC分类号： H01L23/498

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05557 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/062 ,  H05K3/243 ,  H05K2201/0367 ,  H05K2201/09436 ,  H05K2203/054 ,  H05K2203/0723 ,  H01L2924/00014 ,  H01L2924/013

摘要： Forming an electronic structure may include forming a seed layer on a substrate, and forming a mask on the seed layer. The mask may include an aperture therein exposing a portion of the seed layer, and a barrier layer may be formed on the exposed portion of the seed layer. A bump may be formed on the barrier layer, and the mask may be removed. In addition, portions of the seed layer may be selectively removed using the barrier layer as an etch mask.

摘要翻译： 形成电子结构可以包括在基底上形成种子层，并在种子层上形成掩模。 掩模可以包括其中露出种子层的一部分的孔，并且阻挡层可以形成在种子层的暴露部分上。 可以在阻挡层上形成凸起，并且可以去除掩模。 此外，可以使用阻挡层作为蚀刻掩模来选择性地去除种子层的部分。

公开(公告)号：US06863209B2

公开(公告)日：2005-03-08

申请号：US10017350

申请日：2001-12-14

申请人： Glenn A. Rinne ,  Krishna K. Nair

发明人： Glenn A. Rinne ,  Krishna K. Nair

IPC分类号： B23K1/00 ,  B23K31/02

CPC分类号： G02B6/3628 ,  B23K1/0004 ,  G02B6/3636 ,  G02B6/3692

摘要： Methods of bonding two components may include positioning the components relative to one another to obtain a desired orientation. Once the desired orientation is obtained, the components can be bonded in the desired orientation with metal wherein a temperature of both components is maintained below a melting temperature of the metal while bonding. Related structures are also discussed.

摘要翻译： 粘合两个部件的方法可以包括相对于彼此定位组件以获得期望的取向。 一旦获得了所需的取向，就可以将金属成分按期望的方向与金属结合，其中两种成分的温度在粘合时保持在金属的熔融温度以下。 还讨论了相关结构。

公开(公告)号：US06492197B1

公开(公告)日：2002-12-10

申请号：US09576477

申请日：2000-05-23

申请人： Glenn A. Rinne

发明人： Glenn A. Rinne

IPC分类号： H01L2144

CPC分类号： H01L24/12 ,  H01L21/4853 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05572 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11502 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/3463 ,  H05K3/3473 ,  H05K2201/10992 ,  H01L2224/13099 ,  H01L2924/00

摘要： Solder bumps are fabricated by plating a first solder layer on an underbump metallurgy, plating a second solder layer having higher melting point than the first solder layer on the first solder layer and plating a third solder layer having lower melting point than the second solder layer on the second solder layer. The structure then is heated to below the melting point of the second solder layer but above the melting point of the first solder layer and the third solder layer, to alloy at least some of the first solder layer with at least some of the underbump metallurgy and to round the third solder layer. Accordingly, a trilayer solder bump may be fabricated wherein the first and third layers melt at lower temperatures than the second solder layer, to thereby round the outer surface of the solder bump and alloy the base of the solder bump to the underbump metallurgy, while allowing the structure of the intermediate layer to be preserved. Solder bump fabrication as described above may be particularly useful with lead-tin solder wherein the first solder layer is eutectic lead-tin solder, the second solder layer is lead-tin solder having higher lead content than eutectic lead-tin solder and the third solder layer is eutectic lead-tin solder. In yet other embodiments, the thickness and/or composition of the outer underbump metallurgy layer and/or of the first solder layer may be selected so that upon heating, sufficient tin from the first solder layer is alloyed with at least some of the outer underbump metallurgy layer, such that the first solder layer is converted to a fourth solder layer having the same lead content as the second solder layer. Bilayer solder bumps thereby may be provided.

摘要翻译： 通过在下焊管冶金上电镀第一焊料层，在第一焊料层上电镀具有比第一焊料层更高的熔点的第二焊料层并且将具有比第二焊料层低的熔点的第三焊料层电镀到第二焊料层上来制造焊料凸块 第二焊料层。 然后将该结构加热到低于第二焊料层的熔点但高于第一焊料层和第三焊料层的熔点，以使第一焊料层中的至少一些与至少一些下焊管冶金和 绕第三个焊料层。 因此，可以制造三层焊料凸块，其中第一和第三层在比第二焊料层更低的温度下熔化，从而使焊料凸块的外表面圆周化，并将焊料凸块的底部合金到底部焊接冶金，同时允许 待保存的中间层的结构。 如上所述的焊料凸块制造对于铅锡焊料尤其有用，其中第一焊料层是共晶铅锡焊料，第二焊料层是比共晶铅锡焊料具有更高铅含量的铅锡焊料，而第三焊料 层是共晶铅锡焊料。 在另外的其它实施例中，可以选择外部底部基质金属层和/或第一焊料层的厚度和/或组成，使得在加热时，来自第一焊料层的足够的锡与至少一些外部底部基底 使得第一焊料层被转换成具有与第二焊料层相同的铅含量的第四焊料层。 可以提供双层焊料凸块。

公开(公告)号：US06329608B1

公开(公告)日：2001-12-11

申请号：US09286143

申请日：1999-04-05

申请人： Glenn A. Rinne ,  Joseph Daniel Mis

发明人： Glenn A. Rinne ,  Joseph Daniel Mis

IPC分类号： H01R909

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/013

摘要： A flip-ship structure having a semiconductor substrate including an electronic device formed thereon, a contact pad on said semiconductor substrate electrically connected to said electronic device, a passivation layer on said semiconductor substrate and on said contact pad wherein said passivation layer defines a contact hole therein exposing a portion of said contact pad, an under-bump metallurgy structure on said passivation layer electrically contacting said portion of said contact pad that is exposed; and a solder structure on said under-bump metallurgy structure opposite said semiconductor substrate, said solder structure including an elongate portion on said elongate portion of said metallurgy structure opposite said contact pad and an enlarged width portion on said enlarged width portion of said metallurgy structure opposite said passivation layer.

摘要翻译： 一种翻转结构，其具有包括形成在其上的电子器件的半导体衬底，与所述电子器件电连接的所述半导体衬底上的接触焊盘，所述半导体衬底上的钝化层和所述接触焊盘，其中所述钝化层限定接触孔 其中暴露所述接触焊盘的一部分，所述钝化层上的凸起下金属结构与所述暴露的所述接触焊盘的所述部分电接触; 以及在所述凸块下金属结构上与所述半导体衬底相对的焊料结构，所述焊料结构包括在所述冶金结构的所述细长部分上与所述接触焊盘相对的细长部分和所述冶金结构的所述扩大宽度部分上的扩大宽度部分相对 所述钝化层。

公开(公告)号：US5892179A

公开(公告)日：1999-04-06

申请号：US977258

申请日：1997-11-24

申请人： Glenn A. Rinne ,  Joseph Daniel Mis

发明人： Glenn A. Rinne ,  Joseph Daniel Mis

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01R9/09

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49155

摘要： A solder bump structure on a microelectronic substrate including an electrical contact having an exposed portion. This solder bump structure includes an under bump metallurgy structure on the microelectronic substrate, and a solder structure on the under bump metallurgy structure opposite the microelectronic substrate. The metallurgy structure includes an elongate portion having a first end which electronically contacts the exposed portion of the electrical contact and an enlarged width portion connected to a second end of the elongate portion. The solder structure includes an elongate portion on the metallurgy structure and an enlarged width portion on the enlarged width portion of the metallurgy structure. Accordingly, the enlarged width portion of the solder structure can be formed on a portion of the microelectronic substrate other than the contact pad and still be electronically connected to the pad.

摘要翻译： 在微电子衬底上的焊料凸块结构，其包括具有暴露部分的电触点。 该焊料凸块结构包括在微电子衬底上的凸块下金属结构，以及与微电子衬底相对的凸起下冶金结构上的焊料结构。 冶金结构包括细长部分，其细长部分具有电接触电触点的暴露部分的第一端和连接到细长部分的第二端的扩大的宽度部分。 焊料结构包括在冶金结构上的细长部分和在冶金结构的扩大宽度部分上的扩大的宽度部分。 因此，焊料结构的扩大宽度部分可以形成在微电子基板的除接触焊盘之外的部分上，并且仍然电连接到焊盘。

公开(公告)号：US5615825A

公开(公告)日：1997-04-01

申请号：US439591

申请日：1995-05-12

申请人： Stephen M. Bobbio ,  Glenn A. Rinne

发明人： Stephen M. Bobbio ,  Glenn A. Rinne

IPC分类号： B23K35/38 ,  H05K3/34

CPC分类号： H05K3/3489 ,  B23K35/38 ,  B23K2201/40 ,  H01L2224/75

摘要： A method for pretreating a solder surface for fluxless soldering is disclosed. The method uses a noble fluorine gas to remove surface oxides from solder surfaces, without the use of external stimulation. A noble fluorine gas is suffused across the solder surface to reduce or eliminate or chemically convert the surface oxides. The process can take place at atmospheric pressure and room temperature. A simple belt driven transport may be used to move the parts past a nozzle which emits the vapor in a system similar to a conventional solder reflow machine.

摘要翻译： 公开了一种用于无焊剂焊接的焊料表面的预处理方法。 该方法使用贵金属氟气从表面除去表面氧化物，而不需要外部刺激。 在焊料表面上充满贵重氟气以减少或消除或化学转化表面氧化物。 该过程可以在大气压和室温下进行。 可以使用简单的皮带驱动输送来将部件移动通过类似于常规的回流焊机的系统中的喷嘴而喷出蒸气。

公开(公告)号：US08643177B2

公开(公告)日：2014-02-04

申请号：US12968794

申请日：2010-12-15

申请人： Glenn A. Rinne ,  Kevin Engel ,  Julia Roe ,  Christopher John Berry

发明人： Glenn A. Rinne ,  Kevin Engel ,  Julia Roe ,  Christopher John Berry

IPC分类号： H01L23/498

CPC分类号： H01L23/3114 ,  H01L21/78 ,  H01L23/3171 ,  H01L23/562 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/1147 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2224/05099

摘要： A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, may include thinning the wafer from a back side opposite the front side. After thinning the wafer, a back side layer may be provided on the back side of the thinned wafer opposite the front side, and the back side layer may be configured to counter stress on the front side of the wafer including the plurality of integrated circuit devices thereon. After providing the back side layer, the plurality of integrated circuit devices may be separated. Related structures are also discussed.

摘要翻译： 在晶片前侧处理包括多个集成电路器件的晶片的方法可以包括从与前侧相反的背面使晶片变薄。 在使晶片变薄之后，可以在与正面相反的薄化晶片的背面上设置背面层，并且背面层可以被配置为抵抗包括多个集成电路器件的晶片的前侧上的应力 上。 在提供背面层之后，可以分离多个集成电路装置。 还讨论了相关结构。