公开(公告)号：US20240055429A1

公开(公告)日：2024-02-15

申请号：US17818933

申请日：2022-08-10

申请人： QUALCOMM Incorporated

发明人： Xia LI ,  Bin YANG

IPC分类号： H01L27/092 ,  H01L29/06 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/76 ,  H01L29/786 ,  H01L29/775 ,  H01L21/02 ,  H01L21/8256 ,  H01L29/66

CPC分类号： H01L27/0922 ,  H01L29/0673 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/7606 ,  H01L29/78696 ,  H01L29/775 ,  H01L21/02603 ,  H01L21/02568 ,  H01L21/8256 ,  H01L29/66969 ,  H03K19/20

摘要： Disclosed is a complementary field effect transistor (CFET) formed from stacked 2D-material transistors. The 2D-material transistors are formed from transition metal dichalcogenide (TMD), which are atomically thin semiconductors. The stacked TMD transistors allow for enhanced drive current and lower switching capacitance, both of which are desirable.

公开(公告)号：US20230260999A1

公开(公告)日：2023-08-17

申请号：US17672643

申请日：2022-02-15

申请人： Tokyo Electron Limited

发明人： Mark I. Gardner ,  H. Jim Fulford

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/40 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L27/0922 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/41775 ,  H01L21/823871 ,  H01L29/401 ,  H01L29/78618 ,  H01L29/78696 ,  H01L29/6675 ,  H01L21/8256

摘要： A semiconductor device includes a transistor structure that includes a two-dimensional (2D) material around at least a dielectric structure. The transistor structure includes a first source/drain structure in contact with the first 2D material. The transistor structure includes a second source/drain structure in contact with the 2D material. The transistor structure includes a gate structure around at least the 2D material.

公开(公告)号：US20180166561A1

公开(公告)日：2018-06-14

申请号：US15893660

申请日：2018-02-11

申请人： International Business Machines Corporation

发明人： Veeraraghavan S. Basker ,  Alexander Reznicek

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/417 ,  H01L29/267 ,  H01L29/20 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L27/12 ,  H01L27/092 ,  H01L27/088 ,  H01L21/84 ,  H01L21/8256 ,  H01L21/8252 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/324 ,  H01L21/322 ,  H01L21/265 ,  H01L21/225 ,  H01L21/8258

CPC分类号： H01L29/785 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/2258 ,  H01L21/26513 ,  H01L21/3228 ,  H01L21/324 ,  H01L21/3245 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/8252 ,  H01L21/8256 ,  H01L21/8258 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/267 ,  H01L29/41791 ,  H01L29/66446 ,  H01L29/66522 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： FinFET devices including III-V fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the III-V fin structures to form n-type junctions. Leakage through the substrate is addressed by forming p-n junctions adjoining the source/drain regions and isolating the III-V fin structures under the channel regions.

公开(公告)号：US09966415B2

公开(公告)日：2018-05-08

申请号：US15034355

申请日：2016-04-08

申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Mian Zeng ,  Hsiangchih Hsiao ,  Shengdong Zhang

IPC分类号： H01L27/14 ,  H01L27/28 ,  H01L51/05 ,  H01L21/8256 ,  H01L51/00

CPC分类号： H01L27/283 ,  H01L21/77 ,  H01L21/8256 ,  H01L27/28 ,  H01L51/0021 ,  H01L51/0541 ,  H01L51/0558

摘要： A complementary thin film transistor and manufacturing method thereof are provided. The complementary thin film transistor has a substrate, an n-type semiconductor layer, a p-type semiconductor layer, a first passivation layer, a first electrode metal layer, and a second electrode metal layer. The n-type semiconductor layer is disposed above the substrate, and comprises a metal oxide material. The p-type semiconductor layer is disposed above the substrate, and comprises an organic semiconductor material. The first passivation layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, and formed with at least one contacting hole. The first electrode metal layer and the second electrode metal layer are electrically connected with each other through the contacting hole.

公开(公告)号：US09917177B2

公开(公告)日：2018-03-13

申请号：US15350071

申请日：2016-11-13

申请人： International Business Machines Corporation

发明人： Veeraraghavan S. Basker ,  Alexander Reznicek

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8256 ,  H01L21/225 ,  H01L21/02 ,  H01L21/265 ,  H01L21/324 ,  H01L29/267 ,  H01L21/8238 ,  H01L27/12 ,  H01L27/092 ,  H01L29/417 ,  H01L21/8234 ,  H01L21/322 ,  H01L21/84 ,  H01L21/8252 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/20 ,  H01L21/8258

CPC分类号： H01L29/66795 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/2258 ,  H01L21/26513 ,  H01L21/3228 ,  H01L21/324 ,  H01L21/3245 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/8252 ,  H01L21/8256 ,  H01L21/8258 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/267 ,  H01L29/41791 ,  H01L29/66446 ,  H01L29/66522 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

摘要： FinFET devices including III-V fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the III-V fin structures to form n-type junctions. Leakage through the substrate is addressed by forming p-n junctions adjoining the source/drain regions and isolating the III-V fin structures under the channel regions.

公开(公告)号：US20180061968A1

公开(公告)日：2018-03-01

申请号：US15789972

申请日：2017-10-21

申请人： International Business Machines Corporation

发明人： Veeraraghavan S. Basker ,  Alexander Reznicek

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/417 ,  H01L29/267 ,  H01L29/20 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L27/12 ,  H01L27/092 ,  H01L27/088 ,  H01L21/84 ,  H01L21/8256 ,  H01L21/8252 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/324 ,  H01L21/322 ,  H01L21/265 ,  H01L21/225 ,  H01L21/8258

CPC分类号： H01L29/66795 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/2258 ,  H01L21/26513 ,  H01L21/3228 ,  H01L21/324 ,  H01L21/3245 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/8252 ,  H01L21/8256 ,  H01L21/8258 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/267 ,  H01L29/41791 ,  H01L29/66446 ,  H01L29/66522 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

摘要： FinFET devices including III-V fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the III-V fin structures to form n-type junctions. Leakage through the substrate is addressed by forming p-n junctions adjoining the source/drain regions and isolating the III-V fin structures under the channel regions.

公开(公告)号：US09748371B2

公开(公告)日：2017-08-29

申请号：US15120496

申请日：2014-03-21

申请人： Intel Corporation

发明人： Marko Radosavljevic ,  Brian S. Doyle ,  Ravi Pillarisetty ,  Niloy Mukherjee ,  Sansaptak Dasgupta ,  Han Wui Then ,  Robert S. Chau

IPC分类号： H01L29/778 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L21/8256 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08

CPC分类号： H01L29/7782 ,  H01L21/02422 ,  H01L21/02568 ,  H01L21/8256 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/0843 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78681

摘要： Embodiments of semiconductor assemblies, and related integrated circuit devices and techniques, are disclosed herein. In some embodiments, a semiconductor assembly may include a flexible substrate, a first barrier formed of a first transition metal dichalcogenide (TMD) material, a transistor channel formed of a second TMD material, and a second barrier formed of a third TMD material. The first barrier may be disposed between the transistor channel and the flexible substrate, the transistor channel may be disposed between the second barrier and the first barrier, and a bandgap of the transistor channel may be less than a bandgap of the first barrier and less than a bandgap of the second barrier. Other embodiments may be disclosed and/or claimed.

公开(公告)号：US20170040322A1

公开(公告)日：2017-02-09

申请号：US15196400

申请日：2016-06-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Oh-Kyum KWON ,  Myoung-Kyu PARK ,  Chul-Ho CHUNG

IPC分类号： H01L27/092 ,  H01L29/10 ,  H01L29/78 ,  H01L21/8256 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/161 ,  H01L29/08

CPC分类号： H01L27/0922 ,  H01L21/02532 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823892 ,  H01L21/8256 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/1079 ,  H01L29/161 ,  H01L29/42364 ,  H01L29/66651 ,  H01L29/7833

摘要： An integrated circuit device includes a substrate including a first region and a second region, a first transistor in the first region, the first transistor being an N-type transistor and including a first silicon-germanium layer on the substrate, and a first gate electrode on the first silicon-germanium layer, and a second transistor in the second region and including a second gate electrode, the second transistor not having a silicon-germanium layer between the substrate and the second gate electrode.

摘要翻译： 集成电路器件包括：包括第一区域和第二区域的衬底;第一区域中的第一晶体管，第一晶体管是N型晶体管，并且在衬底上包括第一硅 - 锗层;以及第一栅电极 在所述第一硅锗层和所述第二区域中的第二晶体管并且包括第二栅电极，所述第二晶体管在所述衬底和所述第二栅极之间不具有硅 - 锗层。

公开(公告)号：US09564493B2

公开(公告)日：2017-02-07

申请号：US14656948

申请日：2015-03-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jean-Pierre Colinge ,  Carlos H. Diaz ,  Yee-Chia Yeo

IPC分类号： H01L29/66 ,  H01L29/267 ,  H01L29/78 ,  H01L27/088 ,  H01L29/04 ,  H01L21/02 ,  H01L29/10 ,  H01L21/477 ,  H01L21/8234

CPC分类号： H01L29/66969 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02667 ,  H01L21/426 ,  H01L21/441 ,  H01L21/461 ,  H01L21/477 ,  H01L21/76224 ,  H01L21/76895 ,  H01L21/823412 ,  H01L21/823487 ,  H01L21/823885 ,  H01L21/8256 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1207 ,  H01L27/1222 ,  H01L27/127 ,  H01L29/04 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/267 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/7827 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/78696

摘要： Devices, and methods of forming such devices, having a material that is semimetal when in bulk but is a semiconductor in the devices are described. An example structure includes a substrate, a first source/drain contact region, a channel structure, a gate dielectric, a gate electrode, and a second source/drain contact region. The substrate has an upper surface. The channel structure is connected to and over the first source/drain contact region, and the channel structure is over the upper surface of the substrate. The channel structure has a sidewall that extends above the first source/drain contact region. The channel structure comprises a bismuth-containing semiconductor material. The gate dielectric is along the sidewall of the channel structure. The gate electrode is along the gate dielectric. The second source/drain contact region is connected to and over the channel structure.

摘要翻译： 描述了形成这种器件的器件和方法，其具有在体内是半金属的材料，但在器件中是半导体。 示例性结构包括衬底，第一源极/漏极接触区域，沟道结构，栅极电介质，栅极电极和第二源极/漏极接触区域。 基板具有上表面。 沟道结构连接到第一源极/漏极接触区上并且超过第一源极/漏极接触区，并且沟道结构在衬底的上表面之上。 沟道结构具有在第一源极/漏极接触区域上方延伸的侧壁。 沟道结构包括含铋的半导体材料。 栅极电介质沿着沟道结构的侧壁。 栅电极沿着栅极电介质。 第二源极/漏极接触区域连接到沟道结构上方和上方。

公开(公告)号：US20160047059A1

公开(公告)日：2016-02-18

申请号：US14778863

申请日：2014-03-19

申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

发明人： Sun-Kook KIM ,  Jong-Soo RHYEE

IPC分类号： C30B1/10 ,  C30B1/08 ,  C30B29/46 ,  H01L27/092 ,  C01B19/00 ,  H01L21/8256 ,  H01L21/02 ,  C30B1/04 ,  C30B29/16

CPC分类号： C30B1/10 ,  C01B19/00 ,  C01B19/007 ,  C23C16/305 ,  C30B1/02 ,  C30B1/04 ,  C30B1/08 ,  C30B13/24 ,  C30B29/16 ,  C30B29/46 ,  H01L21/02381 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/823807 ,  H01L21/8256 ,  H01L27/092 ,  H01L27/101 ,  H01L29/78681

摘要： Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M′X′2+δ within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating.

摘要翻译： 本发明提供一种硫属化合物的二维大面积生长方法，该方法包括：在基板上沉积过渡金属元素或V族元素的膜; 然后在膜内均匀扩散蒸发的硫属元素，汽化的硫属前体化合物或由M'X'2 +δ表示的硫属化合物; 然后，通过后加热形成由MX2表示的硫属化合物，形成由MX2表示的硫属化合物的膜。