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    PHOTORESIST UNDERLAYER COMPOSITIONS AND METHODS OF FORMING ELECTRONIC DEVICES
    1.
    发明公开
    PHOTORESIST UNDERLAYER COMPOSITIONS AND METHODS OF FORMING ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20240264528A1

    公开(公告)日：2024-08-08

    申请号：US18537020

    申请日：2023-12-12

    申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC

    发明人： Sheng LIU ,  Iou-Sheng KE ,  Keren ZHANG ,  James F. CAMERON ,  Shintaro YAMADA ,  Li CUI

    IPC分类号： G03F7/11 ,  C07C43/285 ,  C07C49/255 ,  C07C317/22

    CPC分类号： G03F7/11 ,  C07C43/285 ,  C07C49/255 ,  C07C317/22

    摘要： Photoresist underlayer compositions, comprising: a curable compound comprising a group of the following formula (1):




    wherein: R1 is each independently H, C1-30 alkyl, or C3-30 cycloalkyl; Ar1 is an aromatic ring or a fused aromatic ring system having from 5 to 30 carbon atoms, wherein Ar1 is substituted or unsubstituted; Ar2 is an aromatic ring chosen from a 6-membered carbocyclic aromatic ring, a 5- or 6-membered heteroaromatic ring, or a fused aromatic ring system having from 5 to 30 carbon atoms, wherein Ar2 optionally comprises a fused cyclic imide moiety, a fused oxazole moiety, a fused imidazole moiety, or a fused thiazole moiety, and wherein Ar2 is substituted or unsubstituted; Y1 is a single covalent bond, or is selected from —O—, —C(O)—, —C(O)O—, —S—, —S(O)2—, —N(R2)—, —C(O)N(R2)—, —C(O)N(R2)C(O)—, —(CH2)y—, or a combination thereof, wherein R2 is H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, C5-30 aryl, C(O)R3, or S(O)2R3, wherein R3 is chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, and C5-30 aryl, and y is an integer from 1 to 6; x is an integer from 2 to 5; and * denotes a binding site to a part of the curable compound other than the group represented by formula (1), provided that no two




    groups are in an ortho position to each other on Ar1, wherein ** denotes the point of attachment to an aromatic ring carbon of Ar1; and

    a solvent.