公开(公告)号：US20130234315A1

公开(公告)日：2013-09-12

申请号：US13414877

申请日：2012-03-08

申请人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

发明人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L22/30 ,  H01L22/12 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/94 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05558 ,  H01L2224/05568 ,  H01L2224/05584 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13028 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/3841 ,  H01L2224/11 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2924/01047 ,  H01L2924/01029

摘要： Structures and methods for detecting solder wetting of pedestal sidewalls. The structure includes a semiconductor wafer having an array of integrated circuit chips, each of the integrated circuit chips having an array of chip pedestals having respective chip solder columns on top of the chip pedestals, the pedestals spaced apart a first distance in a first direction and a spaced apart second distance in second direction perpendicular to the first direction; and at least one monitor structure disposed in different regions of the wafer from the integrated circuit chips, the monitor structure comprising at least a first pedestal and a first solder column on a top surface of the first pedestal and a second pedestal and a second solder column on a top surface of the second pedestal, the first and the second pedestals spaced apart a third distance, the third distance less than the first and the second distances.

摘要翻译： 用于检测基座侧壁焊料润湿的结构和方法。 该结构包括具有集成电路芯片阵列的半导体晶片，每个集成电路芯片具有芯片基座阵列，其具有位于芯片基座顶部的相应的芯片焊料柱，基座沿第一方向隔开第一距离;以及 在垂直于第一方向的第二方向上间隔开的第二距离; 以及设置在所述晶片与所述集成电路芯片的不同区域中的至少一个监视器结构，所述监视器结构至少包括在所述第一基座的顶表面上的第一基座和第一焊料柱，以及第二基座和第二焊接柱 在第二基座的顶表面上，第一和第二基座间隔第三距离，第三距离小于第一和第二距离。

公开(公告)号：US08513814B2

公开(公告)日：2013-08-20

申请号：US13098816

申请日：2011-05-02

申请人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

发明人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC分类号： H01L23/48

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02126 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05664 ,  H01L2224/061 ,  H01L2224/13006 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/141 ,  H01L2224/14104 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

摘要： Structures are provided with raised buffer pads for solder bumps. Methods are also provided for forming the raised buffer pads for solder bumps. The method includes forming a raised localized buffer pad structure on a tensile side of a last metal layer of a solder bump connection. The raised localized buffer pad structure increases a height of a portion of a pad structure of the solder bump connection with respect to a compressive side of the last metal layer.

摘要翻译： 结构提供有用于焊料凸块的凸起缓冲垫。 还提供了用于形成用于焊料凸块的凸起缓冲垫的方法。 该方法包括在焊料凸块连接的最后金属层的拉伸侧上形成升高的局部缓冲垫结构。 凸起的局部缓冲垫结构相对于最后一个金属层的压缩侧增加焊料凸块连接的焊盘结构的一部分的高度。

公开(公告)号：US08198133B2

公开(公告)日：2012-06-12

申请号：US12458441

申请日：2009-07-13

申请人： Timothy H. Daubenspeck ,  Paul Fortier ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  David L. Questad ,  Wolfgang Sauter ,  Timothy D. Sullivan

发明人： Timothy H. Daubenspeck ,  Paul Fortier ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  David L. Questad ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC分类号： H01L21/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/03005 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05016 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05552 ,  H01L2224/05563 ,  H01L2224/05572 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Controlled collapse chip connection (C4) structures and methods of manufacture, and more specifically to structures and methods to improve lead-free C4 interconnect reliability. A structure includes a ball limited metallization (BLM) layer and a controlled collapse chip connection (C4) solder ball formed on the BLM layer. Additionally, the structure includes a final metal pad layer beneath the BLM layer and a cap layer beneath the final metal pad layer. Furthermore, the structure includes an air gap formed beneath the C4 solder ball between the final metal pad layer and one of the BLM layer and the cap layer.

摘要翻译： 控制崩溃芯片连接（C4）结构和制造方法，更具体地说是提高无铅C4互连可靠性的结构和方法。 一种结构包括球限制金属化（BLM）层和形成在BLM层上的受控崩溃芯片连接（C4）焊球。 此外，该结构包括在BLM层下面的最终金属垫层和在最终金属垫层下面的盖层。 此外，该结构包括在最终金属焊盘层和BLM层和盖层之一内的C4焊球之下形成的气隙。

公开(公告)号：US08138099B1

公开(公告)日：2012-03-20

申请号：US12948079

申请日：2010-11-17

申请人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

发明人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC分类号： H01L21/302

CPC分类号： B81C1/00325 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05552 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/06051 ,  H01L2224/11001 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13015 ,  H01L2224/13018 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/141 ,  H01L2224/14131 ,  H01L2224/16057 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81002 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2924/00

摘要： Disclosed herein is a solder self-assembly structure, an IC chip including a solder self-assembly structure, and a method of making the same. The structure includes a release layer disposed on a portion of an upper surface of the substrate, laterally spaced from a via in the substrate. A barrier layer metallization (BLM) is disposed in a first part over a portion of the substrate including a via, and in a second part over the release layer, leaving a surface of the substrate exposed between the first portion and the second portion of the BLM. A solder structure is disposed over the first and second portions of the BLM and the exposed surface of the substrate disposed there between. When the solder structure is reflowed and annealed, surface tension in the solder causes self-assembly of a three-dimensional, compliant solder structure.

摘要翻译： 这里公开了焊料自组装结构，包括焊料自组装结构的IC芯片及其制造方法。 该结构包括设置在基板的上表面的一部分上的释放层，与衬底中的通孔横向间隔开。 阻挡层金属化（BLM）被布置在包括通孔的衬底的一部分上的第一部分中，并且在释放层上的第二部分中，留下衬底的表面暴露在第一部分和第二部分之间 BLM。 焊料结构设置在BLM的第一和第二部分上以及设置在其间的衬底的暴露表面。 当焊料结构回流和退火时，焊料中的表面张力引起三维，柔性焊料结构的自组装。

公开(公告)号：US20110012249A1

公开(公告)日：2011-01-20

申请号：US12503870

申请日：2009-07-16

申请人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

发明人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC分类号： H01L23/52 ,  H01L23/498 ,  H01L21/60

CPC分类号： H01L23/49816 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/16225 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01067 ,  H01L2924/10155 ,  H01L2924/10158 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/00015 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An IC chip package, in one embodiment, may include an IC chip including an upper surface including an overhang extending beyond a sidewall of the IC chip, and underfill material about the sidewall and under the overhang. The overhang prevents underfill material from extending over an upper surface of the IC chip. In another embodiment, a ball grid array (BGA) is first mounted to landing pads on a lower of two joined IC chip packages. Since the BGA is formed on the lower IC chip package first, the BGA acts as a dam for the underfill material thereon. The underfill material extends about the respective IC chip and surrounds a bottom portion of a plurality of solder elements of the BGA and at least a portion of respective landing pads thereof.

摘要翻译： 在一个实施例中，IC芯片封装可以包括IC芯片，其包括包括延伸超过IC芯片的侧壁的突出部分的上表面，以及围绕侧壁和突出部分的底部填充材料。 悬垂防止底部填充材料在IC芯片的上表面上延伸。 在另一个实施例中，首先将球栅阵列（BGA）安装到两个连接的IC芯片封装的较低的焊盘上。 由于BGA首先形成在下部IC芯片封装上，所以BGA用作其上的底部填充材料的坝。 底部填充材料围绕相应的IC芯片延伸并围绕BGA的多个焊料元件的底部以及其各自的着陆焊盘的至少一部分。

公开(公告)号：US20100164096A1

公开(公告)日：2010-07-01

申请号：US12344711

申请日：2008-12-29

申请人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

发明人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC分类号： H01L23/488 ,  H01L21/44

CPC分类号： H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/05644 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00013 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/0103 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a via formed in a dielectric layer to expose a contact pad and a capture pad formed in the via and over the dielectric layer. The capture pad has openings over the dielectric layer to form segmented features. The solder bump is deposited on the capture pad and the openings over the dielectric layer.

摘要翻译： 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该结构包括在电介质层中形成的通孔，以露出形成在通孔中和电介质层上的接触焊盘和捕获焊盘。 捕获垫在电介质层上具有开口以形成分段特征。 焊料凸块沉积在捕获垫上并且在介电层上沉积开口。

公开(公告)号：US09035459B2

公开(公告)日：2015-05-19

申请号：US12421723

申请日：2009-04-10

申请人： Charles L. Arvin ,  Raschid J. Bezama ,  Harry D. Cox ,  Timothy H. Daubenspeck ,  Krystyna W. Semkow ,  Timothy D. Sullivan

发明人： Charles L. Arvin ,  Raschid J. Bezama ,  Harry D. Cox ,  Timothy H. Daubenspeck ,  Krystyna W. Semkow ,  Timothy D. Sullivan

IPC分类号： C23C14/24 ,  H01L23/00 ,  C25D5/02 ,  C25D5/14 ,  C25D5/48

CPC分类号： H01L24/05 ,  C25D5/02 ,  C25D5/14 ,  C25D5/48 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05075 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/013 ,  H01L2924/01027

摘要： Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.

摘要翻译： 提供互连结构及其制造方法。 互连结构提供用于改善载流能力（例如，电流扩展）的高可靠性铜互连结构。 该结构包括在沟槽中形成的凸块下金属。 凸起下冶金至少包括：粘合层; 电镀阻挡层; 以及设置在粘合层和镀层阻挡层之间的镀覆导电金属层。 该结构还包括形成在凸块下金属上的焊料凸块。

公开(公告)号：US20130299989A1

公开(公告)日：2013-11-14

申请号：US13468750

申请日：2012-05-10

申请人： Charles L. Arvin ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

发明人： Charles L. Arvin ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC分类号： H01L23/52 ,  H01L21/768

CPC分类号： H01L24/11 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0348 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/11005 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11472 ,  H01L2224/11903 ,  H01L2224/11906 ,  H01L2224/13 ,  H01L2224/13006 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16238 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： Chip connection structures and related methods of forming such structures are disclosed. In one case, an interconnect structure is disclosed, the structure including: a pillar connecting an integrated circuit chip and a substrate, the pillar including a barrier layer, a first copper layer over the barrier layer, and a first solder layer over the first copper layer.

公开(公告)号：US08409980B2

公开(公告)日：2013-04-02

申请号：US13347087

申请日：2012-01-10

申请人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Marie-Claude Paquet ,  Wolfgang Sauter ,  Timothy D. Sullivan

发明人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Marie-Claude Paquet ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC分类号： H01L21/44

CPC分类号： H01L21/56 ,  H01L21/563 ,  H01L23/49816 ,  H01L24/743 ,  H01L24/97 ,  H01L29/0657 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00

摘要： Underfill flow guide structures and methods of using the same are provided with a module. The method includes mounting bumps on a substrate. The method also includes forming underfill flow guide structures on the substrate by patterning wires with an overlay of hard substance. The underfill flow guide structures are integrated with the substrate and formed between adjacent bumps. The underfill flow guide structures are further formed to uniformly guide underfill along the substrate during capillary underfill processing.

摘要翻译： 底部填充流动引导结构及其使用方法具有模块。 该方法包括在基板上安装凸块。 该方法还包括通过用硬质材料的覆盖图案化线来在基底上形成底部填充流动引导结构。 底部填充流动引导结构与基板集成并形成在相邻的凸块之间。 底部填充流动引导结构进一步形成为在毛细管底部填充处理期间沿着基底均匀地引导底部填充物。

公开(公告)号：US08264078B2

公开(公告)日：2012-09-11

申请号：US13324499

申请日：2011-12-13

申请人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

发明人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/03 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/11334 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05552

摘要： In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias that provide electrical connection between the lower level metal line structure located underneath the upper level metal line structure. In another embodiment, the reliability of a C4 ball is enhanced by employing a metal pad structure having a set of integrated metal vias that are segmented and distributed to facilitate uniform current density distribution within the C4 ball. The areal density of the cross-sectional area in the plurality of metal vias is higher at the center portion of the metal pad than at the peripheral portion of the planar portion of the metal pad.

摘要翻译： 在一个实施例中，金属结构的子垫组件位于金属垫的正下方。 子焊盘组件包括邻接金属焊盘的上层金属线结构，位于上层金属线结构下方的下层金属线结构，以及一组在下层金属线结构之间提供电连接的金属通孔 在上层金属线结构下方。 在另一个实施例中，C4球的可靠性通过使用具有一组集成金属通孔的金属焊盘结构而被增强，所述集成金属通孔被分段和分配以便于在C4球内均匀的电流密度分布。 在金属焊盘的中心部分，多个金属通孔中的横截面面积的面密度高于在金属焊盘的平面部分的周边部分。