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    Method and apparatus for process monitoring and control
    3.
    发明授权
    Method and apparatus for process monitoring and control 失效
    过程监控和控制的方法和装置

    公开(公告)号：US07355171B2

    公开(公告)日：2008-04-08

    申请号：US10501558

    申请日：2003-01-28

    申请人： Audunn Ludviksson

    发明人： Audunn Ludviksson

    IPC分类号： H01J49/00 ,  H01J49/14

    CPC分类号： H01J37/32844 ,  C23C14/54 ,  C23C14/548 ,  C23C16/52 ,  H01J37/32623 ,  H01J37/32935 ,  H01J37/32954 ,  H01J37/32963 ,  H01J37/32972 ,  Y02C20/30

    摘要： A method and apparatus for real-time monitoring of a gaseous environment during a semiconductor process. The method utilizes metastable electronic energy transfer to excite and ionize the chamber gaseous effluent and correlates the fluorescence signals from the excited species and mass spectroscopy analysis of the ions generated with the process status. In addition to the ability to produce excited species that fluoresce, the method has the ability to generate molecular ions from labile compounds, reduce fragmentation and operate at higher pressures than conventional ionization methods.

    摘要翻译： 一种在半导体工艺期间实时监测气体环境的方法和装置。 该方法利用亚稳态电子能量转移来激发和离子化室气态流出物，并将来自激发物质的荧光信号和与过程状态产生的离子的质谱分析相关联。 除了产生荧光物质的激发物质的能力外，该方法还具有从不稳定化合物产生分子离子的能力，减少碎片化并在比常规电离方法更高的压力下操作。

    Apparatus and method for use of optical system with a plasma processing system
    4.
    发明授权
    Apparatus and method for use of optical system with a plasma processing system 失效
    使用等离子体处理系统的光学系统的装置和方法

    公开(公告)号：US07591923B2

    公开(公告)日：2009-09-22

    申请号：US11082223

    申请日：2005-03-17

    申请人： Andrej S Mitrovic ,  Audunn Ludviksson

    发明人： Andrej S Mitrovic ,  Audunn Ludviksson

    IPC分类号： G01L21/30

    CPC分类号： H01J37/32935 ,  H01J37/32972

    摘要： A plasma processing system and method for operating an optical system in conjunction with a plasma processing system are provided. The plasma processing system includes an optical system in communication with a plasma processing chamber of the plasma processing system. The optical system has a window and is constructed and arranged to detect a plasma process condition through the window and a transmission condition of the window. The method includes detecting an optical emission from the plasma processing region and monitoring contamination of a window provided by the optical system.

    摘要翻译： 提供了一种与等离子体处理系统一起操作光学系统的等离子体处理系统和方法。 等离子体处理系统包括与等离子体处理系统的等离子体处理室连通的光学系统。 光学系统具有窗口，并被构造和布置成通过窗口和窗口的传输条件来检测等离子体处理条件。 该方法包括检测来自等离子体处理区域的光发射并监测由光学系统提供的窗口的污染。

    Method and apparatus for process monitoring and control
    5.
    发明申请
    Method and apparatus for process monitoring and control 失效
    过程监控和控制的方法和装置

    公开(公告)号：US20060255260A1

    公开(公告)日：2006-11-16

    申请号：US10501558

    申请日：2003-01-28

    申请人： Audunn Ludviksson

    发明人： Audunn Ludviksson

    IPC分类号： H01J49/00

    CPC分类号： H01J37/32844 ,  C23C14/54 ,  C23C14/548 ,  C23C16/52 ,  H01J37/32623 ,  H01J37/32935 ,  H01J37/32954 ,  H01J37/32963 ,  H01J37/32972 ,  Y02C20/30

    摘要： A method and apparatus for real-time monitoring of a gaseous environment during a semiconductor process. The method utilizes metastable electronic energy transfer to excite and ionize the chamber gaseous effluent and correlates the fluorescence signals from the excited species and mass spectroscopy analysis of the ions generated with the process status. In addition to the ability to produce excited species that fluoresce, the method has the ability to generate molecular ions from labile compounds, reduce fragmentation and operate at higher pressures than conventional ionization methods.

    摘要翻译： 一种在半导体工艺期间实时监测气体环境的方法和装置。 该方法利用亚稳态电子能量转移来激发和离子化室气态流出物，并将来自激发物质的荧光信号和与过程状态产生的离子的质谱分析相关联。 除了产生荧光物质的激发物质的能力外，该方法还具有从不稳定化合物产生分子离子的能力，减少碎片化并在比常规电离方法更高的压力下操作。

    Process monitoring using infrared optical diagnostics
    6.
    发明授权
    Process monitoring using infrared optical diagnostics 有权
    使用红外光学诊断程序监控

    公开(公告)号：US07102132B2

    公开(公告)日：2006-09-05

    申请号：US10507201

    申请日：2003-03-17

    申请人： Audunn Ludviksson

    发明人： Audunn Ludviksson

    IPC分类号： G01N21/35

    CPC分类号： C23C14/54 ,  C23C16/52 ,  G01N21/3504 ,  H01J37/32972

    摘要： A method and apparatus for real-time monitoring of the substrate and the gaseous process environment in a semi-conductor process step is described. The method uses infrared spectroscopy for in-situ analysis of gaseous molecular species in the process region and characterization of adsorbed chemical species on a substrate. The process monitoring can be applied to endpoint- and fault detection in etching and deposition processes, in addition to chamber cleaning and chamber condition steps.

    摘要翻译： 描述了在半导体工艺步骤中用于实时监测衬底和气体工艺环境的方法和装置。 该方法使用红外光谱法对工艺区域中的气态分子物质进行原位分析，并对基底上吸附的化学物质进行表征。 除了室清洁和室条件步骤之外，过程监控可以应用于蚀刻和沉积工艺中的端点和故障检测。

    Monitoring erosion of system components by optical emission
    7.
    发明授权
    Monitoring erosion of system components by optical emission 失效
    通过光发射监测系统组件的侵蚀

    公开(公告)号：US06894769B2

    公开(公告)日：2005-05-17

    申请号：US10331456

    申请日：2002-12-31

    申请人： Audunn Ludviksson ,  Eric J. Strang

    发明人： Audunn Ludviksson ,  Eric J. Strang

    IPC分类号： G01J3/30 ,  G01J3/443 ,  G01N21/00 ,  G01N21/64 ,  G01N21/84 ,  H01J37/32

    CPC分类号： H01J37/32935 ,  G01N21/645 ,  G01N2021/8416 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/3299

    摘要： A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate erosion of system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

    摘要翻译： 提供了一种用于监测等离子体处理系统中的系统部件的侵蚀的方法和系统。 系统组件包含当暴露于等离子体时能够产生特征荧光发射的发射体。 该方法利用光发射来监测来自发射器的荧光发射，以确定系统组件状态。 该方法可以通过监测来自发射器的荧光发射来评估等离子体中系统组件的侵蚀。 可以使用该方法监测的消耗品系统组件包括环，屏蔽，电极，挡板和衬垫。

    Plasma etching of Cu-containing layers
    10.
    发明授权
    Plasma etching of Cu-containing layers 失效
    含Cu层的等离子体蚀刻

    公开(公告)号：US07553427B2

    公开(公告)日：2009-06-30

    申请号：US10514202

    申请日：2003-04-14

    申请人： Audunn Ludviksson ,  Lee Chen

    发明人： Audunn Ludviksson ,  Lee Chen

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32082 ,  H01L21/32136

    摘要： A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source reacts with halogenated Cu-containing surfaces and forms volatile etch products that allows for anisotropic etching of Cu-containing layers using conventional plasma etching tools.

    摘要翻译： 提供一种方法和装置，用于在含卤素等离子体存在下，使用铝源在半导体器件中等离子体蚀刻含Cu层。 铝源与卤化的含Cu表面反应并形成挥发性蚀刻产物，其允许使用常规等离子体蚀刻工具对含Cu层进行各向异性蚀刻。