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    Porous semiconductor and process for producing the same
    6.
    发明申请
    Porous semiconductor and process for producing the same 失效

    公开(公告)号：US20050042743A1

    公开(公告)日：2005-02-24

    申请号：US10500975

    申请日：2003-07-10

    申请人： Chihiro Kawai ,  Masami Tatsumi

    发明人： Chihiro Kawai ,  Masami Tatsumi

    IPC分类号： A61L9/16 ,  A61L9/20 ,  B01J35/00 ,  C02F1/32 ,  C02F1/72 ,  C09K11/02 ,  C09K11/08 ,  C09K11/54 ,  C09K11/59 ,  C09K11/62 ,  C09K11/64 ,  C09K11/65 ,  C09K11/67 ,  C09K11/77 ,  H01L33/16 ,  H01L33/18 ,  H01L35/24 ,  C12M1/34

    CPC分类号： H01L33/16 ,  A61L9/16 ,  A61L9/205 ,  B01J35/004 ,  C02F1/001 ,  C02F1/32 ,  C02F1/725 ,  C02F2101/30 ,  C02F2303/04 ,  C09K11/02 ,  C09K11/0883 ,  C09K11/54 ,  C09K11/59 ,  C09K11/62 ,  C09K11/64 ,  C09K11/65 ,  C09K11/672 ,  C09K11/77 ,  C09K11/7704 ,  C09K11/7766 ,  C09K11/7783 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a filter with which organic matter, bacteria, viruses, and other harmful substances can be trapped, and the trapped material can be sterilized and decomposed, at low cost and extremely high efficiency. A porous ceramic or metal is used as a substrate, and a porous semiconductor composed of a semiconductor material having a light emitting function is formed in the interior or on the surface of this substrate. An electrode is provided to this product to serve as a filter, voltage is applied so that ultraviolet light is emitted while a fluid is being filtered, and any harmful substances are filtered and simultaneously sterilized and decomposed. The porous semiconductor layer is preferably composed of columns grown perpendicular to the substrate plane, and has the function of emitting ultraviolet light with a wavelength of 400 nm or less. The pores in the porous substrate column are through-holes perpendicular to the substrate plane, and the average size of these pores is preferably from 0.1 to 100 μm. The distal ends of the columns preferably have a pointed shape. To manufacture, a suspension of semiconductor particles having a light emitting function is filtered through the porous substrate serving as a filter medium so as to form a deposited layer of semiconductor particles on the porous substrate surface. A deposited layer of p-type semiconductor particles and a deposited layer of n-type semiconductor particles may also be formed so that these form a pn junction. Further, the present invention is characterized in that an insulating layer is formed on the top and bottom surfaces of the porous semiconductor layer, and semiconductor particles are dispersed in the insulating layer, with the bandgap of the semiconductor particles in the porous light emitting layer or the porous semiconductor layer being at least 3.2 eV, and being doped with gadolinium, which is the light emitting center. In addition, the porous semiconductor layer may be made of porous silicon nitride composed of columnar Si3N4 particles with an average aspect ratio of at least 3 and an oxide-based binder phase containing at least one of rare earth element, and emit visible light or ultraviolet light.

    Fabrication process for electron field-emission display
    10.
    发明授权
    Fabrication process for electron field-emission display 失效
    电子场发射显示的制作工艺

    公开(公告)号：US6015326A

    公开(公告)日：2000-01-18

    申请号：US900915

    申请日：1997-07-28

    申请人： Michael D Potter

    发明人： Michael D Potter

    IPC分类号： C09K11/67 ,  C09K11/68 ,  C09K11/69 ,  C09K11/77 ,  H01J9/227 ,  H01J9/14

    CPC分类号： H01J9/227 ,  C09K11/672 ,  C09K11/682 ,  C09K11/693 ,  C09K11/7702 ,  C09K11/7708

    摘要： An electron field-emission display comprises one or more display cell structures, each having a field-emission cathode and an anode comprising at least one of several cathodoluminescent phosphors disclosed which are stimulable by electrons of very low energy. The display cell structures may also have gate elements for controlling electron current flowing from cathode to anode when suitable electrical bias voltages are applied. A preferred fabrication process integrates an etch stop with an in situ phosphor formation process. The etch stop precisely defines the depth of an opening in the display cell structure. Metal oxides or mixed-metal oxides of zinc, copper, tin, or indium are heated in the presence of a refractory metal such as titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, or combinations thereof to make phosphors of various chromaticities, which may also include dopants, such as a lanthanide rare earth element, manganese, chromium, or stoichiometrically excess zinc, copper, tin, or indium. A blue-light-emitting phosphor embodiment is based on ZnO treated with refractory metals, e.g. Ta, to prepare cathodoluminescent phosphor compositions, e.g. Ta.sub.2 Zn.sub.3 O.sub.8. Selective arrangement of various color phosphors may be made by selective deposition of suitable dopants. The selective deposition may be done, e.g. by chemical vapor deposition with appropriate masking, or by selective ion implantation.

    摘要翻译： 电子场致发射显示器包括一个或多个显示单元结构，每个显示单元结构都具有场发射阴极和阳极，其包括可被非常低能量的电子刺激的几种阴极发光荧光体中的至少一种。 当施加适当的电偏压时，显示单元结构还可以具有用于控制从阴极流向阳极的电子电流的栅极元件。 优选的制造工艺将蚀刻停止与原位磷光体形成工艺相结合。 蚀刻停止件精确地限定显示单元结构中的开口的深度。 金属氧化物或锌，铜，锡或铟的混合金属氧化物在难熔金属如钛，锆，铪，钒，铌，钽，铬，钼，钨或其组合的存在下加热， 各种色度的荧光体，其还可以包括掺杂剂，例如镧系元素稀土元素，锰，铬或化学计量过量的锌，铜，锡或铟。 蓝色发光荧光体实施方案基于用难熔金属处理的ZnO，例如， Ta，以制备阴极发光荧光体组合物，例如 Ta2Zn3O8。 可以通过选择性沉积合适的掺杂剂来进行各种彩色荧光体的选择性布置。 可以进行选择性沉积，例如 通过适当掩蔽的化学气相沉积，或通过选择性离子注入。