公开(公告)号：US08501613B2

公开(公告)日：2013-08-06

申请号：US13178276

申请日：2011-07-07

申请人： Yi-Yang Lei ,  Hung-Jui Kuo ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Yi-Yang Lei ,  Hung-Jui Kuo ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/036 ,  H01L2224/03632 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05564 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.

摘要翻译： 一种方法包括形成覆盖衬底的凸起下金属（UBM）层，以及形成覆盖UBM层的掩模。 掩模覆盖UBM层的第一部分，并且UBM层的第二部分通过掩模中的开口暴露。 在UBM层的开口和第二部分上形成金属凸块。 然后取下面具。 执行激光去除以去除UBM层的第一部分的一部分并形成UBM。

公开(公告)号：US08450856B2

公开(公告)日：2013-05-28

申请号：US13240533

申请日：2011-09-22

申请人： Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min ,  Hojin Lee ,  Minseung Yoon

发明人： Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min ,  Hojin Lee ,  Minseung Yoon

IPC分类号： H01L23/48

CPC分类号： H01L21/4835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L27/14618 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/02313 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/03462 ,  H01L2224/03466 ,  H01L2224/03602 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/06181 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29011 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented.

公开(公告)号：US20130127045A1

公开(公告)日：2013-05-23

申请号：US13406270

申请日：2012-02-27

申请人： Tsung-Shu LIN ,  Han-Ping PU ,  Ming-Da CHENG ,  Chang-Chia HUANG ,  Hao-Juin LIU

发明人： Tsung-Shu LIN ,  Han-Ping PU ,  Ming-Da CHENG ,  Chang-Chia HUANG ,  Hao-Juin LIU

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L23/293 ,  H01L21/568 ,  H01L23/3157 ,  H01L24/02 ,  H01L24/03 ,  H01L24/04 ,  H01L24/05 ,  H01L24/06 ,  H01L24/10 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10126 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16237 ,  H01L2224/73104 ,  H01L2224/81193 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2924/207 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： The mechanisms of forming a copper post structures described enable formation of copper post structures on a flat conductive surface. In addition, the copper post structures are supported by a molding layer with a Young's modulus (or a harder material) higher than polyimide. The copper post structures formed greatly reduce the risk of cracking of passivation layer and delamination of at the dielectric interface surrounding the copper post structures.

摘要翻译： 形成所述铜柱结构的机理使得能够在平坦的导电表面上形成铜柱结构。 此外，铜柱结构由比聚酰亚胺高的杨氏模量（或更硬的材料）的模制层支撑。 形成的铜柱结构大大降低了钝化层开裂的危险和铜柱结构周围介质界面的分层。

公开(公告)号：US08433402B2

公开(公告)日：2013-04-30

申请号：US13096982

申请日：2011-04-28

申请人： David A Ruben ,  Michael F Mattes ,  Jonathan R Smith

发明人： David A Ruben ,  Michael F Mattes ,  Jonathan R Smith

IPC分类号： A61N1/00

CPC分类号： H01L24/81 ,  A61B5/00 ,  A61B5/0402 ,  A61N1/375 ,  H01L21/76898 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05567 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13007 ,  H01L2224/13016 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/16111 ,  H01L2224/29111 ,  H01L2224/80896 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/83894 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/9205 ,  H01L2224/9212 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2224/80 ,  H01L2224/81 ,  H01L2924/01028 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/80001 ,  H01L2924/00012

摘要： An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom point in the front side to a first height located at a surface of the front side. A first conductive pad is formed in the first via, the first conductive pad having an exposed top surface lower than first height. A second substrate is coupled to the first substrate, the second substrate having a second via formed in the front side, the via extending from a bottom point in the front side to a second height located at a surface of the front side. A second conductive pad is formed in the second via, the second conductive pad having an exposed top surface lower than second height. The coupled substrates are heated until a portion of one or both conductive pads reflow, dewet, agglomerate, and merge to form an interconnect, hermetic seal, or both depending on the requirements of the device.

摘要翻译： 公开了可植入医疗装置（IMD）。 IMD包括具有前侧和后侧的第一基板。 第一通孔形成在前侧，通孔从前侧的底点延伸到位于前侧表面的第一高度。 第一导电焊盘形成在第一通孔中，第一导电焊盘具有低于第一高度的暴露的顶表面。 第二基板耦合到第一基板，第二基板具有形成在前侧的第二通孔，该通孔从前侧的底点延伸到位于前侧表面的第二高度。 第二导电焊盘形成在第二通孔中，第二导电焊盘具有低于第二高度的暴露的顶表面。 耦合的衬底被加热直到根据器件的要求，一个或两个导电焊盘的一部分回流，脱水，聚集和合并以形成互连，气密密封或两者。

公开(公告)号：US20130099383A1

公开(公告)日：2013-04-25

申请号：US13278681

申请日：2011-10-21

申请人： Georg Meyer-Berg ,  Christian Birzer

发明人： Georg Meyer-Berg ,  Christian Birzer

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L24/05 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/13 ,  H01L2224/0235 ,  H01L2224/02375 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05012 ,  H01L2224/05014 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/0579 ,  H01L2224/058 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014

摘要： An electrical device includes a semiconductor chip. The semiconductor chip includes a routing line. An insulating layer is arranged over the semiconductor chip. A solder deposit is arranged over the insulating layer. A via extends through an opening of the insulating layer to electrically connect the routing line to the solder deposit. A front edge line portion of the via facing the routing line is substantially straight, has a concave curvature or has a convex curvature of a diameter greater than a maximum lateral dimension of the via.

摘要翻译： 电气装置包括半导体芯片。 半导体芯片包括布线线。 绝缘层布置在半导体芯片的上方。 在绝缘层上方布置有焊料沉积物。 通孔延伸穿过绝缘层的开口以将布线线电连接到焊料沉积物。 面向路线线的通孔的前边缘线部分基本上是直的，具有凹曲率或具有大于通孔的最大横向尺寸的直径的凸曲率。

公开(公告)号：US20130075907A1

公开(公告)日：2013-03-28

申请号：US13243078

申请日：2011-09-23

申请人： Mengzhi PANG

发明人： Mengzhi PANG

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L21/768 ,  H01L21/60

CPC分类号： H01L24/03 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/036 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05547 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05555 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/15787 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

摘要： In order to achieve finer bump interconnect pitch for integrated circuit packaging, while relieving pressure-induced delamination of upper layer dielectric films, the under bump metallurgy of the present invention provides a pressure distribution pedestal upon which a narrower copper pillar is disposed. A solder mini-bump is disposed on the upper exposed portion of the copper pillar, wherein the solder is softer than the copper pillar. The radius of the copper pillars is selected such that lateral deformation of the solder mini-bumps during final assembly does not form undesired conductive bridges between adjacent pillars.

摘要翻译： 为了实现用于集成电路封装的更好的凸块互连间距，在缓和上层电介质膜的压力引起的分层的同时，本发明的凸块下的冶金提供了一个压力分配基座，在该压力分配基座上设置较窄的铜柱。 焊料微型凸块设置在铜柱的上部暴露部分上，其中焊料比铜柱更软。 选择铜柱的半径，使得在最终组装期间焊料微型凸块的横向变形在相邻柱之间不形成不期望的导电桥。

公开(公告)号：US20130012014A1

公开(公告)日：2013-01-10

申请号：US13178276

申请日：2011-07-07

申请人： Yi-Yang Lei ,  Hung-Jui Kuo ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Yi-Yang Lei ,  Hung-Jui Kuo ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： H01L21/28

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/036 ,  H01L2224/03632 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05564 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.

摘要翻译： 一种方法包括形成覆盖衬底的凸起下金属（UBM）层，以及形成覆盖UBM层的掩模。 掩模覆盖UBM层的第一部分，并且UBM层的第二部分通过掩模中的开口暴露。 在UBM层的开口和第二部分上形成金属凸块。 然后取下面具。 执行激光去除以去除UBM层的第一部分的一部分并形成UBM。

公开(公告)号：US20130009150A1

公开(公告)日：2013-01-10

申请号：US13540637

申请日：2012-07-03

申请人： Naoya INOUE ,  Kishou KANEKO ,  Yoshihiro HAYASHI

发明人： Naoya INOUE ,  Kishou KANEKO ,  Yoshihiro HAYASHI

IPC分类号： H01L27/06 ,  H01L21/58 ,  H01L21/20 ,  H01L23/485

CPC分类号： H01L23/49827 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49872 ,  H01L24/13 ,  H01L27/1225 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2224/05552

摘要： When a semiconductor element is formed over a wiring substrate, the number of manufacturing steps of the wiring substrate is reduced.A first wiring 232 is disposed over one surface of a core layer 200. A semiconductor layer 236 is formed over the first wiring 232 and over one surface of the core layer 200 located around the first wiring 232. The first wiring 232 and the semiconductor layer 236 form a semiconductor element. In the present embodiment, the semiconductor element is a transistor 230, in which the first wiring 232 is the gate electrode, and has a gate insulating film 234 between the semiconductor layer 236 and the first wiring 232.

摘要翻译： 当在布线基板上形成半导体元件时，布线基板的制造步骤数量减少。 第一布线232设置在芯层200的一个表面上。半导体层236形成在第一布线232上方并位于围绕第一布线232的芯层200的一个表面上。第一布线232和半导体层 236形成半导体元件。 在本实施例中，半导体元件是晶体管230，其中第一布线232是栅电极，并且在半导体层236和第一布线232之间具有栅极绝缘膜234。

公开(公告)号：US08338947B2

公开(公告)日：2012-12-25

申请号：US13361232

申请日：2012-01-30

申请人： Timothy H. Daubenspeck ,  Timothy D. Sullivan

发明人： Timothy H. Daubenspeck ,  Timothy D. Sullivan

IPC分类号： H01L23/498

CPC分类号： H01L23/488 ,  H01L24/05 ,  H01L24/13 ,  H01L24/45 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05022 ,  H01L2224/05541 ,  H01L2224/05557 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/45147 ,  H01L2224/48824 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2224/05552

摘要： Structure and methods of making the structures. The structures include a structure, comprising: an organic dielectric passivation layer extending over a substrate; an electrically conductive current spreading pad on a top surface of the organic dielectric passivation layer; an electrically conductive solder bump pad comprising one or more layers on a top surface of the current spreading pad; and an electrically conductive solder bump containing tin, the solder bump on a top surface of the solder bump pad, the current spreading pad comprising one or more layers, at least one of the one or more layers consisting of a material that will not form an intermetallic with tin or at least one of the one or more layers is a material that is a diffusion barrier to tin and adjacent to the solder bump pad.

公开(公告)号：US20120273823A1

公开(公告)日：2012-11-01

申请号：US13457307

申请日：2012-04-26

申请人： Akinori YONEDA ,  Hirofumi Kawaguchi ,  Kouichiroh Deguchi

发明人： Akinori YONEDA ,  Hirofumi Kawaguchi ,  Kouichiroh Deguchi

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L24/03 ,  H01L24/04 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/0345 ,  H01L2224/03472 ,  H01L2224/0401 ,  H01L2224/05564 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/06102 ,  H01L2224/11462 ,  H01L2224/13007 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2933/0016 ,  H01L2933/0066

摘要： A nitride semiconductor light emitting element having a thick metal bump, and a method of manufacturing a flip-chip nitride semiconductor light emitting element including: a nitride semiconductor light emitting element structure having an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, which are laminated on a substrate, and an n-side electrode connecting surface for connecting an n-side electrode to the n-type nitride semiconductor layer and a p-side electrode connecting surface for connecting a p-side electrode to the p-type nitride semiconductor layer on the same plane side of the substrate, the n-side electrode being connected to the n-side electrode connecting surface and the p-side electrode being connected to the p-side electrode connecting surface; and metal bumps formed on the n-side electrode and the p-side electrode, with other manufacturing steps performed.

摘要翻译： 一种具有厚金属凸块的氮化物半导体发光元件及其制造方法，该方法包括：具有n型氮化物半导体层和p型氮化物半导体的氮化物半导体发光元件结构 层叠在基板上的n侧电极连接面和用于将n侧电极连接到n型氮化物半导体层的n侧电极连接面和用于将p侧电极连接到p的p侧电极连接面 氮化物半导体层，其与n侧电极连接面连接，p侧电极与p侧电极连接面连接， 以及形成在n侧电极和p侧电极上的金属凸块，并进行其他制造步骤。