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1.发明申请公开(公告)号：US20120273823A1
公开(公告)日：2012-11-01
申请号：US13457307
申请日：2012-04-26
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L24/03 , H01L24/04 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2224/0345 , H01L2224/03472 , H01L2224/0401 , H01L2224/05564 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/05669 , H01L2224/06102 , H01L2224/11462 , H01L2224/13007 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2933/0016 , H01L2933/0066
摘要： A nitride semiconductor light emitting element having a thick metal bump, and a method of manufacturing a flip-chip nitride semiconductor light emitting element including: a nitride semiconductor light emitting element structure having an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, which are laminated on a substrate, and an n-side electrode connecting surface for connecting an n-side electrode to the n-type nitride semiconductor layer and a p-side electrode connecting surface for connecting a p-side electrode to the p-type nitride semiconductor layer on the same plane side of the substrate, the n-side electrode being connected to the n-side electrode connecting surface and the p-side electrode being connected to the p-side electrode connecting surface; and metal bumps formed on the n-side electrode and the p-side electrode, with other manufacturing steps performed.
摘要翻译： 一种具有厚金属凸块的氮化物半导体发光元件及其制造方法，该方法包括：具有n型氮化物半导体层和p型氮化物半导体的氮化物半导体发光元件结构 层叠在基板上的n侧电极连接面和用于将n侧电极连接到n型氮化物半导体层的n侧电极连接面和用于将p侧电极连接到p的p侧电极连接面 氮化物半导体层，其与n侧电极连接面连接，p侧电极与p侧电极连接面连接， 以及形成在n侧电极和p侧电极上的金属凸块，并进行其他制造步骤。
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2.发明授权Method of manufacturing nitride semiconductor light emitting element having thick metal bump 有权制造具有厚金属凸块的氮化物半导体发光元件的方法公开(公告)号：US09231159B2
公开(公告)日：2016-01-05
申请号：US13457307
申请日：2012-04-26
CPC分类号： H01L33/62 , H01L24/03 , H01L24/04 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2224/0345 , H01L2224/03472 , H01L2224/0401 , H01L2224/05564 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/05669 , H01L2224/06102 , H01L2224/11462 , H01L2224/13007 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2933/0016 , H01L2933/0066
摘要： A method of manufacturing a flip-chip nitride semiconductor light emitting element includes steps of providing a nitride semiconductor light emitting element structure; forming an insulating protective layer on the nitride semiconductor light emitting element structure; forming a resist pattern having openings above an n-side electrode connecting surface and a p-side electrode connecting surface; etching the protective layer to expose the n-side electrode connecting surface and the p-side electrode connecting surface using the resist pattern as a mask; forming a first metal layer that becomes an n-side electrode and a p-side electrode, the first metal layer being formed as a continuous layer disposed on the n-side electrode connecting surface, the p-side electrode connecting surface and the resist pattern; forming a second metal layer that becomes metal bumps by electrolytic plating using the first metal layer as an electrode for the electrolytic plating; and removing the resist pattern.
摘要翻译： 制造倒装芯片氮化物半导体发光元件的方法包括提供氮化物半导体发光元件结构的步骤; 在所述氮化物半导体发光元件结构上形成绝缘保护层; 形成具有在n侧电极连接表面和p侧电极连接表面上方的开口的抗蚀剂图案; 蚀刻保护层以使用抗蚀剂图案作为掩模使n侧电极连接表面和p侧电极连接表面露出; 形成成为n侧电极和p侧电极的第一金属层，所述第一金属层形成为设置在n侧电极连接面，p侧电极连接面和抗蚀图案上的连续层 ; 通过使用第一金属层作为电解电镀的电极，通过电解电镀形成金属凸块的第二金属层; 并去除抗蚀剂图案。
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公开(公告)号：US08981420B2
公开(公告)日：2015-03-17
申请号：US11436026
申请日：2006-05-18
CPC分类号： H01L33/42 , H01L33/32 , H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.
摘要翻译： 氮化物半导体器件包括具有高可靠性的导电氧化物膜。 具有氮化物半导体层的氮化物半导体器件包括氮化物半导体层上的导电氧化物膜和导电氧化物膜上的焊盘电极。 焊盘电极包括含有第一金属并与导电氧化物膜接触的接合层和包含第二金属的焊盘层。
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公开(公告)号：US08878214B2
公开(公告)日：2014-11-04
申请号：US13338128
申请日：2011-12-27
CPC分类号： H01L27/156 , H01L33/405 , H01L33/50 , H01L33/505 , H01L33/508 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.
摘要翻译： 半导体发光器件包括半导体发光元件，该半导体发光元件包括依次层叠的p型半导体层，有源层和n型半导体层的半导体层叠体和与p型半导体连接的导电性支撑基板 半导体层叠体的层侧。 半导体层叠体通过沟槽分成至少两个半导体区域。 半导体发光器件还包括覆盖半导体发光元件的至少一部分的第一透明密封树脂，第一透明密封树脂包括多个第一荧光颗粒，每个第一荧光颗粒具有单独的平均粒径。 沟槽的宽度小于第一荧光颗粒的各个平均粒径的总平均值。
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公开(公告)号：US20060261355A1
公开(公告)日：2006-11-23
申请号：US11436026
申请日：2006-05-18
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.
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公开(公告)号：US09093356B2
公开(公告)日：2015-07-28
申请号：US13336667
申请日：2011-12-23
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/405 , H01L2224/48463
摘要： A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.
摘要翻译： 半导体发光元件包括依次层叠的包括p型半导体层，有源层和n型半导体层的半导体层叠体; 以及与半导体层叠体的p型半导体层侧接合的导电性支撑基板。 通过穿透p型半导体层，有源层和n型半导体层的沟槽将半导体层叠体分成至少两个半导体区域。
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公开(公告)号：US20120161184A1
公开(公告)日：2012-06-28
申请号：US13338128
申请日：2011-12-27
IPC分类号： H01L33/50
CPC分类号： H01L27/156 , H01L33/405 , H01L33/50 , H01L33/505 , H01L33/508 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.
摘要翻译： 半导体发光器件包括半导体发光元件，该半导体发光元件包括依次层叠的p型半导体层，有源层和n型半导体层的半导体层叠体和与p型半导体连接的导电性支撑基板 半导体层叠体的层侧。 半导体层叠体通过沟槽分成至少两个半导体区域。 半导体发光器件还包括覆盖半导体发光元件的至少一部分的第一透明密封树脂，第一透明密封树脂包括多个第一荧光颗粒，每个第一荧光颗粒具有单独的平均粒径。 沟槽的宽度小于第一荧光颗粒的各个平均粒径的总平均值。
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