摘要:
A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.
摘要:
A method for manufacturing a semiconductor light emitting element from a wafer in which a gallium nitride compound semiconductor has been laminated on a sapphire substrate having an orientation flat, comprises of: laminating a semiconductor layer on a first main face of the sapphire substrate having an off angle θ in a direction Xo parallel to the orientation flat; forming a first break groove that extends in a direction Y substantially perpendicular to the direction Xo, on the semiconductor layer side; forming a second break line that is shifted by a predetermined distance in the ±Xo direction from a predicted split line within the first break groove and parallel to the first break groove in the interior of the sapphire substrate and corresponding to the inclination of the off angle θ; and splitting the wafer along the first and/or second break line.
摘要:
A signal processor includes a point setting part that sets a position of a main image signal, as a registration point. A playback control part causes output of an image frame from the registration point used as a starting point in response to a given playback instruction. A capture processing part generates a registration image based on the main image signal and stores the registration image, the at least one image frame being placed in a neighborhood of the registration point. A point recording part writes the registration point into a memory and writes the registration image corresponding to the recorded point into the memory. A point calling part reads out the recorded image and the recorded point in response to a given calling instruction. The point setting part sets the recorded point and the recorded image as the registration point and the registration image, respectively.
摘要:
A nitride semiconductor light emitting element is provided with: a substrate 11 having a pair of main surfaces that face each other; a nitride semiconductor layer of a first conductivity type layered on one of the main surfaces of substrate 11; a nitride semiconductor layer of a second conductivity type layered on the nitride semiconductor layer of the first conductivity type; an active layer 14 formed between the nitride semiconductor layer of the first conductivity type and the nitride semiconductor layer of the second conductivity type; and a reflective layer 16 formed on the nitride semiconductor layer of the second conductivity type for reflecting light from active layer 14 toward the nitride semiconductor layer of the second conductivity type. This nitride semiconductor light emitting element can be mounted on a circuit board, with the other main surface of the above described substrate 11 being used as the main light emitting surface. Furthermore, a translucent conductive layer 17 is formed between reflective layer 16 and the nitride semiconductor layer of the second conductivity type, and an uneven interface 22 is formed as the interface between translucent conductive layer 17 and reflective layer 16.
摘要:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
摘要:
A method for reproducing information, comprising the steps of: reading compressed audio data from an information recording medium in which the compressed audio data is recorded in a frame unit; and subjecting the compressed audio data thus read to an expansion processing to reproduce same. When an instruction is given to make a special reproduction in which a frame region to be reproduced and an other frame region not to be reproduced are mixed, control is made so that the compressed audio data in respective frames are successively reproduced in the frame region to be reproduced, and a header information for the respective frames is read out in the other frame region not to be reproduced, and determination on a leading position of a subsequent frame is made on a basis of the header information, thereby conducting a successive migration for the respective frames.
摘要:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
摘要:
An alumina-based porous support with uniform physical properties is obtained in a rapid sintering process. An alumina raw material including a raw alumina powder and an inorganic binder is molded into an article, and the article is then sintered for 5 to 8 hours at 1520 to 1560.degree. C. using a roller hearth kiln.
摘要:
The present invention relates to a buckwheat starch syrup prepared by liquefying, saccharisfying, and proteolyzing starch from buckwheat flour, a method for preparing the buckwheat starch syrup, and various foods containing the same. The buckwheat starch syrup of the present invention contains various amino acids and minerals, as well as rutin which is effective in preventing arteriosclerosis, and hence it is healthy and excellent in nutritive balance. Thus, the buckwheat starch syrup of the present invention can be suitably used in various foods.
摘要:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.