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1291 条记录 (耗时 0.032 秒)

    Deposition of boron and carbon containing materials
    51.
    发明授权
    Deposition of boron and carbon containing materials 有权
    沉积含硼和碳的材料

    公开(公告)号：US09362109B2

    公开(公告)日：2016-06-07

    申请号：US14515395

    申请日：2014-10-15

    申请人： ASM IP HOLDING B.V.

    发明人： Viljami Pore

    IPC分类号： H01L21/02 ,  C23C16/30 ,  C23C16/04 ,  C23C16/32 ,  C23C16/455 ,  H01L21/311

    CPC分类号： H01L21/0217 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  H01L21/02112 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

    摘要： Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.

    摘要翻译： 提供了沉积硼和碳的膜的方法。 在一些实施例中，提供了沉积具有所需性质（诸如保形性和蚀刻速率）的B，C膜的方法。 一种或多种含硼和/或碳的前体可以在小于约400℃的温度下在基材上分解。在一些实施方案中，提供了沉积包含B和C的氮化硅膜的方法。 可以通过包括形成SiN的ALD循环和对生长膜贡献B和C的CVD循环的沉积工艺来沉积氮化硅膜。

    Conformal film deposition for gapfill
    52.
    发明授权
    Conformal film deposition for gapfill 有权
    用于间隙填充的保形膜沉积

    公开(公告)号：US09355886B2

    公开(公告)日：2016-05-31

    申请号：US14074596

    申请日：2013-11-07

    申请人： Novellus Systems, Inc.

    发明人： Shankar Swaminathan ,  Bart van Schravendijk ,  Adrien LaVoie ,  Sesha Varadarajan ,  Jason Daejin Park ,  Michal Danek ,  Naohiro Shoda

    IPC分类号： H01L21/311 ,  H01L21/762 ,  H01L21/67 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56

    CPC分类号： H01L21/76224 ,  C23C16/045 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017

    摘要： A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer via CFD.

    摘要翻译： 公开了一种用于在衬底中的高纵横比间隙中共形沉积介电氧化物的方法和装置。 衬底在反应室中具有一个或多个间隙，其中每个间隙具有大于约5:1的深宽比。 第一电介质氧化物层通过CFD沉积在一个或多个间隙中。 使用等离子体蚀刻蚀刻第一电介质氧化物层的一部分，其中蚀刻第一电介质氧化物层的部分以比在每个间隙的底表面附近的顶表面附近以更快的速率发生，使得第一电介质氧化物层具有 从每个间隙的顶表面到底表面的锥形轮廓。 第二电介质氧化物层通过CFD沉积在第一电介质氧化物层上的一个或多个间隙中。

    LOW TEMPATURE TUNGSTEN FILM DEPOSITION FOR SMALL CRITICAL DIMENSION CONTACTS AND INTERCONNECTS
    53.
    发明申请
    LOW TEMPATURE TUNGSTEN FILM DEPOSITION FOR SMALL CRITICAL DIMENSION CONTACTS AND INTERCONNECTS 审中-公开
    低温TUNGSTEN薄膜沉积小尺寸连接和互连

    公开(公告)号：US20160118345A1

    公开(公告)日：2016-04-28

    申请号：US14989444

    申请日：2016-01-06

    申请人： Novellus Systems, Inc.

    发明人： Feng Chen ,  Raashina Humayun ,  Michal Danek ,  Anand Chandrashekar

    IPC分类号： H01L23/535 ,  H01L23/532 ,  C23C16/52 ,  H01L21/768

    CPC分类号： H01L23/535 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/67017 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process.

    摘要翻译： 提供了高空隙特征的无空隙钨填充的方法。 根据各种实施方案，该方法包括用钨填充特征的降温化学气相沉积（CVD）工艺。 在某些实施方案中，在化学气相沉积期间将工艺温度保持在小于约350℃以填充该特征。 降低温度的CVD钨填料提供了改进的高纵横比特征的钨填充，为氟迁移到下层提供了改进的障碍，同时获得与标准CVD填充相似的薄膜电阻率。 还提供了沉积具有低电阻率的薄钨膜的方法。 根据各种实施例，所述方法包括在沉积钨体层之前对沉积的成核层进行降低温度的低电阻率处理和/或通过降低温度的CVD工艺沉积体层，然后进行高温CVD工艺。

    METHOD FOR DEPOSITING FILMS ON SEMICONDUCTOR WAFERS
    54.
    发明申请
    METHOD FOR DEPOSITING FILMS ON SEMICONDUCTOR WAFERS 有权
    在半导体波导上沉积薄膜的方法

    公开(公告)号：US20160093487A1

    公开(公告)日：2016-03-31

    申请号：US14497577

    申请日：2014-09-26

    申请人： ASM IP Holding B.V.

    发明人： Frank HUUSSEN ,  Gijs DINGEMANS ,  Steven R.A. Van Aerde

    IPC分类号： H01L21/02 ,  H01L21/673 ,  H01L21/285

    CPC分类号： H01L21/0262 ,  C23C16/45523 ,  C23C16/4583 ,  C23C16/46 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/32055 ,  H01L21/67303

    摘要： An exemplary embodiment of the present invention provides a method of depositing of a film on semiconductor wafers. In a first step, a film thickness of 3 um or less is deposited on wafers accommodated in a wafer boat in a vertical furnace at a deposition temperature of the furnace while a deposition gas is flowing. During the first step, the temperature may be held substantially constant. In a second step, a temperature deviation or variation of at least 50° C. from the deposition temperature of the first step is applied and the furnace temperature is returned to the deposition temperature of the first step while the flow of the deposition gas is stopped. The first and second steps are repeated until a desired final film thickness is deposited.

    摘要翻译： 本发明的示例性实施例提供了一种在半导体晶片上沉积膜的方法。 在第一步骤中，当沉积气体流动时，在炉的沉积温度下，将垂直炉中容纳在晶片舟皿中的晶片上沉积3μm或更小的膜厚度。 在第一步骤期间，温度可以保持基本恒定。 在第二步骤中，施加与第一步骤的沉积温度相比至少50℃的温度偏差或变化，并且炉温度返回到第一步骤的沉积温度，同时沉积气体的流动停止 。 重复第一和第二步骤，直到沉积所需的最终膜厚度。

    Method for forming an electrically conductive oxide film, an electrically conductive oxide film, and uses for the same
    55.
    发明授权
    Method for forming an electrically conductive oxide film, an electrically conductive oxide film, and uses for the same 有权
    形成导电氧化膜的方法，导电氧化物膜及其用途

    公开(公告)号：US09290840B2

    公开(公告)日：2016-03-22

    申请号：US13505640

    申请日：2010-11-02

    申请人： Jarmo Maula

    发明人： Jarmo Maula

    IPC分类号： H01B1/02 ,  C23C16/08 ,  C23C16/18 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C28/00 ,  C23C30/00

    CPC分类号： H01B1/08 ,  C23C16/08 ,  C23C16/18 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  C23C28/00 ,  C23C28/04 ,  C23C30/00

    摘要： A method for forming an electrically conductive oxide film (1) on a substrate (2), the method comprising the steps of, bringing the substrate (2) into a reaction space, forming a preliminary deposit on a deposition surface of the substrate (2) and treating the deposition surface with a chemical. The step of forming the preliminary deposit on the deposition surface of the substrate (2) comprises forming a preliminary deposit of transition metal oxide on the deposition surface and subsequently purging the reaction space. The step of treating the deposition surface with a chemical comprises treating the deposition surface with an organometallic chemical and subsequently purging the reaction space, to form oxide comprising oxygen, first metal and transition metal. The steps of forming the preliminary deposit and treating the deposition surface being alternately repeated such that a film (1) of electrically conductive oxide is formed on the substrate (2).

    摘要翻译： 一种在基板（2）上形成导电氧化物膜（1）的方法，所述方法包括以下步骤：将基板（2）进入反应空间，在基板（2）的沉积表面上形成预沉积物 ）并用化学品处理沉积表面。 在基板（2）的沉积表面上形成初步沉积物的步骤包括在沉积表面上形成过渡金属氧化物的初步沉积物，随后清洗反应空间。 用化学品处理沉积表面的步骤包括用有机金属化学品处理沉积表面，随后吹扫反应空间，以形成包含氧，第一金属和过渡金属的氧化物。 交替地重复形成预沉积和处理沉积表面的步骤，使得在基板（2）上形成导电氧化物膜（1）。

    SUBSTRATE PROCESSING APPARATUS
    59.
    发明申请
    SUBSTRATE PROCESSING APPARATUS 审中-公开
    基板加工设备

    公开(公告)号：US20160024650A1

    公开(公告)日：2016-01-28

    申请号：US14804653

    申请日：2015-07-21

    申请人： HITACHI KOKUSAI ELECTRIC INC.

    发明人： Kazuyuki TOYODA ,  Hiroshi ASHIHARA ,  Atsushi SANO ,  Naonori AKAE ,  Hidehiro YANAI

    IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52

    CPC分类号： C23C16/45523 ,  C23C16/345 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/45582 ,  C23C16/4585

    摘要： A substrate processing apparatus includes: a reaction zone configured to accommodate a substrate; a substrate supporting member having a projecting part extending outward; a partition plate configured to partition off the reaction zone and a transferring zone, coming in contact with the projecting part of the substrate supporting member when the substrate is processed; a process gas supplying system configured to supply a process gas to the reaction zone; and a partitioning purge gas supplying system configured to supply a purge gas to a gap formed between the projecting part and the partition plate when supplying the process gas to the substrate.

    摘要翻译： 基板处理装置包括：被配置为容纳基板的反应区; 具有向外延伸的突出部的基板支撑部件; 配置成隔离反应区域的分隔板和当处理基板时与基板支撑构件的突出部分接触的转移区域; 工艺气体供给系统，被配置为向所述反应区域供给处理气体; 以及分配吹扫气体供给系统，其构造成当向所述基板供给处理气体时，向所述突出部和所述隔板之间的间隙供给净化气体。