公开(公告)号：US09552982B2

公开(公告)日：2017-01-24

申请号：US15133174

申请日：2016-04-19

申请人： Novellus Systems, Inc.

发明人： Adrien LaVoie

IPC分类号： H01L21/205 ,  H01L21/02 ,  C23C16/32 ,  C23C16/36 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/0228 ,  C23C16/325 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/52 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0226 ,  H01L21/02274

摘要： Disclosed herein are methods of forming SiC/SiCN film layers on surfaces of semiconductor substrates. The methods may include introducing a silicon-containing film-precursor and an organometallic ligand transfer reagent into a processing chamber, adsorbing the silicon-containing film-precursor, the organometallic ligand transfer reagent, or both onto a surface of a semiconductor substrate under conditions whereby either or both form an adsorption-limited layer, and reacting the silicon-containing film-precursor with the organometallic ligand transfer reagent, after either or both have formed the adsorption-limited layer. The reaction results in the forming of the film layer. In some embodiments, a byproduct is also formed which contains substantially all of the metal of the organometallic ligand transfer reagent, and the methods may further include removing the byproduct from the processing chamber. Also disclosed herein are semiconductor processing apparatuses for forming SiC/SiCN film layers.

摘要翻译： 这里公开了在半导体衬底的表面上形成SiC / SiCN膜层的方法。 该方法可以包括将含硅膜前体和有机金属配体转移试剂引入到处理室中，在半导体衬底的表面上将含硅膜前体，有机金属配体转移试剂或两者吸附到半导体衬底的表面上， 在形成吸附限制层之后，或两者之一或两者形成吸附限制层，并使含硅膜前体与有机金属配体转移试剂反应。 反应导致膜层的形成。 在一些实施方案中，还形成副产物，其含有基本上所有的有机金属配体转移试剂的金属，并且所述方法还可以包括从处理室除去副产物。 本文还公开了用于形成SiC / SiCN膜层的半导体处理装置。

公开(公告)号：US20160293418A1

公开(公告)日：2016-10-06

申请号：US15177108

申请日：2016-06-08

申请人： Novellus Systems, Inc.

发明人： Frank L. Pasquale ,  Shankar Swaminathan ,  Adrien LaVoie ,  Nader Shamma ,  Girish A. Dixit

IPC分类号： H01L21/033 ,  H01L21/02 ,  C23C16/56 ,  C23C16/40 ,  C23C16/455 ,  C23C16/505 ,  H01L21/027 ,  H01L21/311

CPC分类号： H01L21/0337 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/20

摘要： Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

公开(公告)号：US20160155676A1

公开(公告)日：2016-06-02

申请号：US15015952

申请日：2016-02-04

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02

CPC分类号： H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

摘要翻译： 本文提供了在敏感基板上形成薄膜同时防止对敏感基板的损伤的方法和装置。 在某些实施方案中，方法包括在敏感基材上形成双层膜，其均保护下面的基材免受损坏并具有所需的电性能。 还提供了用于评估和优化膜的方法和装置，包括评估由特定沉积工艺产生的衬底损伤的量的方法和确定保护层的最小厚度的方法。 本文所述的方法和装置可以用于在多种敏感材料如硅，钴，锗 - 锑 - 碲，硅 - 锗，氮化硅，碳化硅，钨，钛，钽，铬，镍， 钯，钌或氧化硅。

公开(公告)号：US09230800B2

公开(公告)日：2016-01-05

申请号：US14231554

申请日：2014-03-31

申请人： Novellus Systems, Inc.

发明人： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/67 ,  H01L21/762 ,  H01L21/768

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US20150126042A1

公开(公告)日：2015-05-07

申请号：US14194324

申请日：2014-02-28

申请人： Novellus Systems, Inc.

发明人： Frank L. Pasquale ,  Shankar Swaminathan ,  Adrien LaVoie ,  Nader Shamma ,  Girish Dixit

IPC分类号： H01L21/02

CPC分类号： H01L21/0337 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/20

摘要： Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

摘要翻译： 提供了在芯层上沉积纳米级保护层的方法，以使得能够在核心层上沉积高质量的保形膜以用于高级多重图案化方案。 在某些实施方案中，所述方法包括使用具有低高频射频（HFRF）等离子体功率的等离子体原子层沉积技术沉积薄氧化硅或氧化钛膜，然后沉积具有高的高分子量的共形氧化钛膜或间隔物 HFRF等离子体功率。

公开(公告)号：US20140209562A1

公开(公告)日：2014-07-31

申请号：US14231554

申请日：2014-03-31

申请人： Novellus Systems, Inc.

发明人： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US20130309415A1

公开(公告)日：2013-11-21

申请号：US13890346

申请日：2013-05-09

申请人： NOVELLUS SYSTEMS, INC.

发明人： Shankar Swaminathan ,  Hu Kang ,  Adrien LaVoie

IPC分类号： C23C16/52

CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/505

摘要： Systems and methods for processing a substrate include a) arranging a substrate on a pedestal in a processing chamber; b) supplying precursor to the processing chamber; c) purging the processing chamber; d) performing radio frequency (RF) plasma activation; e) purging the processing chamber; and f) prior to purging the processing chamber in at least one of (c) or (e), setting a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at least one of (b) or (d) for a first predetermined period.

摘要翻译： 用于处理衬底的系统和方法包括：a）将衬底布置在处理室中的基座上; b）将前体供应到处理室; c）清洗处理室; d）执行射频（RF）等离子体激活; e）清洗处理室; 以及f）在（c）或（e）中的至少一个中清洗处理室之前，在（b）中的至少一个中将处理室​​的真空压力设定为小于真空压力的第一预定压力， 或（d）第一预定时段。

公开(公告)号：US10192742B2

公开(公告)日：2019-01-29

申请号：US15874766

申请日：2018-01-18

申请人： Novellus Systems, Inc.

发明人： Frank L. Pasquale ,  Shankar Swaminathan ,  Adrien LaVoie ,  Nader Shamma ,  Girish A. Dixit

IPC分类号： H01L21/31 ,  H01L21/033 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/66 ,  C23C16/505 ,  C23C16/56 ,  H01L21/027 ,  H01L21/311

摘要： Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

公开(公告)号：US09786570B2

公开(公告)日：2017-10-10

申请号：US15015952

申请日：2016-02-04

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40

CPC分类号： H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US09287113B2

公开(公告)日：2016-03-15

申请号：US14074617

申请日：2013-11-07

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  H01L21/66 ,  C23C16/455

CPC分类号： H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

摘要翻译： 本文提供了在敏感基板上形成薄膜同时防止对敏感基板的损伤的方法和装置。 在某些实施方案中，方法包括在敏感基材上形成双层膜，其均保护下面的基材免受损坏并具有所需的电性能。 还提供了用于评估和优化膜的方法和装置，包括评估由特定沉积工艺产生的衬底损伤的量的方法和确定保护层的最小厚度的方法。 本文所述的方法和装置可以用于在多种敏感材料如硅，钴，锗 - 锑 - 碲，硅 - 锗，氮化硅，碳化硅，钨，钛，钽，铬，镍， 钯，钌或氧化硅。