公开(公告)号：US10741458B2

公开(公告)日：2020-08-11

申请号：US15965628

申请日：2018-04-27

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20180247875A1

公开(公告)日：2018-08-30

申请号：US15965628

申请日：2018-04-27

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20170316988A1

公开(公告)日：2017-11-02

申请号：US15650662

申请日：2017-07-14

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40

CPC分类号： H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20170148628A1

公开(公告)日：2017-05-25

申请号：US15426889

申请日：2017-02-07

申请人： Novellus Systems, Inc.

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi Kattige ,  Bart van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

公开(公告)号：US20140216337A1

公开(公告)日：2014-08-07

申请号：US14133239

申请日：2013-12-18

申请人： Novellus Systems, Inc.

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart K. van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/67

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

公开(公告)号：US10043655B2

公开(公告)日：2018-08-07

申请号：US15426889

申请日：2017-02-07

申请人： Novellus Systems, Inc.

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi Kattige ,  Bart van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/469 ,  H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/768

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

公开(公告)号：US20150259791A1

公开(公告)日：2015-09-17

申请号：US14713639

申请日：2015-05-15

申请人： Novellus Systems, Inc.

发明人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

IPC分类号： C23C16/34 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

摘要翻译： 描述了在衬底上制造氮化硅（SiN）材料的方法。 还包括通过这些方法制备的改进的SiN膜。 一方面涉及沉积无氯（Cl）的保形SiN膜。 在一些实施例中，SiN膜是无Cl且不含碳（C）。 另一方面涉及调整共形SiN膜的应力和/或湿蚀刻速率的方法。 另一方面涉及沉积高质量共形SiN膜的低温方法。 在一些实施方案中，所述方法包括使用三甲硅烷胺（TSA）作为含硅前体。

公开(公告)号：US08962101B2

公开(公告)日：2015-02-24

申请号：US13974808

申请日：2013-08-23

申请人： Novellus Systems, Inc.

发明人： Pramod Subramonium ,  Aaron Bingham ,  Tim Thomas ,  Jon Henri ,  Greg Farhner

IPC分类号： H05H1/24 ,  H01L21/469

CPC分类号： H01L21/469 ,  C23C16/26 ,  C23C16/509 ,  H01J37/32091 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/31144

摘要： High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor partial pressures and/or low process temperatures. Also provided are ceramic wafer pedestals with multiple electrode planes embedded with the pedestal are provided. According to various embodiments, the pedestals have multiple RF mesh electrode planes that are connected together such that all the electrode planes are at the same potential.

摘要翻译： 提供了用于形成对下层具有高等离子体蚀刻选择性的透明可吸入硬掩模（AHM）的高沉积速率方法。 该方法包括将晶片放置在诸如用于等离子体增强沉积的动力基座的动力电极上。 根据各种实施方案，沉积在低烃前体分压和/或低工艺温度下运行。 还提供了具有嵌入基座的多个电极平面的陶瓷晶片基座。 根据各种实施例，基座具有连接在一起的多个RF网状电极平面，使得所有电极平面处于相同的电位。

公开(公告)号：US20160155676A1

公开(公告)日：2016-06-02

申请号：US15015952

申请日：2016-02-04

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02

CPC分类号： H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

摘要翻译： 本文提供了在敏感基板上形成薄膜同时防止对敏感基板的损伤的方法和装置。 在某些实施方案中，方法包括在敏感基材上形成双层膜，其均保护下面的基材免受损坏并具有所需的电性能。 还提供了用于评估和优化膜的方法和装置，包括评估由特定沉积工艺产生的衬底损伤的量的方法和确定保护层的最小厚度的方法。 本文所述的方法和装置可以用于在多种敏感材料如硅，钴，锗 - 锑 - 碲，硅 - 锗，氮化硅，碳化硅，钨，钛，钽，铬，镍， 钯，钌或氧化硅。

公开(公告)号：US09230800B2

公开(公告)日：2016-01-05

申请号：US14231554

申请日：2014-03-31

申请人： Novellus Systems, Inc.

发明人： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/67 ,  H01L21/762 ,  H01L21/768

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。