公开(公告)号：US09677176B2

公开(公告)日：2017-06-13

申请号：US13934597

申请日：2013-07-03

Applicant: Novellus Systems, Inc.

Inventor： Ramesh Chandrasekharan ,  Jennifer L. Petraglia

IPC: C23C16/455 ,  B05B1/18

CPC classification number: C23C16/45572 ,  B05B1/18 ,  C23C16/45565 ,  C23C16/45574

Abstract: A dual-temperature, multi-plenum showerhead for use in semiconductor processing equipment is described. The showerhead may supply multiple separate gases to a wafer reaction area while keeping the gases largely segregated within the showerhead. Additionally, the showerhead may be configured to allow a faceplate of the showerhead to be maintained at a significantly higher temperature than the rest of the showerhead.

公开(公告)号：US11725282B2

公开(公告)日：2023-08-15

申请号：US17445562

申请日：2021-08-20

Applicant: Novellus Systems, Inc.

Inventor： Chunguang Xia ,  Ramesh Chandrasekharan ,  Douglas Keil ,  Edward J. Augustyniak ,  Karl Frederick Leeser

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  C23C16/4558 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/45525 ,  C23C16/45591 ,  C23C16/5096 ,  H01J37/3244

Abstract: A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.

公开(公告)号：US09230800B2

公开(公告)日：2016-01-05

申请号：US14231554

申请日：2014-03-31

Applicant: Novellus Systems, Inc.

Inventor： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/67 ,  H01L21/762 ,  H01L21/768

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US20140209562A1

公开(公告)日：2014-07-31

申请号：US14231554

申请日：2014-03-31

Applicant: Novellus Systems, Inc.

Inventor： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US20130316094A1

公开(公告)日：2013-11-28

申请号：US13900627

申请日：2013-05-23

Applicant: Novellus Systems, Inc.

Inventor： Karl F. Leeser ,  Jeremy Tucker ,  Ramesh Chandrasekharan

IPC: C23C16/455 ,  F24H3/00

CPC classification number: C23C16/455 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/5096 ,  F24H3/002 ,  H01J37/3244 ,  H01J37/32449

Abstract: A gas diffusing device includes a first portion defining a gas supply conduit having a first inlet and a first outlet and including a second inlet, a second outlet and passages connecting the second inlet to the second outlet. The passages receive non-conductive fluid to cool the first portion. A second portion is connected to the first portion, includes a diffuser face with spaced holes and defines a cavity that is in fluid communication with the first outlet of the gas supply conduit and the diffuser face. A heater is in contact with the second portion to heat the second portion.

Abstract translation: 气体扩散装置包括限定具有第一入口和第一出口的气体供应管道的第一部分，并且包括第二入口，第二出口和将第二入口连接到第二出口的通道。 通道接收非导电流体以冷却第一部分。 第二部分连接到第一部分，包括具有间隔开的孔的扩散器面，并且限定与气体供应导管和扩散器面的第一出口流体连通的空腔。 加热器与第二部分接触以加热第二部分。

公开(公告)号：US20210381106A1

公开(公告)日：2021-12-09

申请号：US17445562

申请日：2021-08-20

Applicant: Novellus Systems, Inc.

Inventor： Chunguang Xia ,  Ramesh Chandrasekharan ,  Douglas Keil ,  Edward J. Augustyniak ,  Karl Frederick Leeser

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  H01J37/32

Abstract: A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.

公开(公告)号：US20160289832A1

公开(公告)日：2016-10-06

申请号：US15177548

申请日：2016-06-09

Applicant: Novellus Systems, Inc

Inventor： Chunguang Xia ,  Ramesh Chandrasekharan ,  Douglas Keil ,  Edward J. Augustyniak ,  Karl Leeser

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/45525 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/5096 ,  H01J37/3244

Abstract: A substrate processing system includes a showerhead that comprises a base portion and a stem portion and that delivers precursor gas to a chamber. A collar connects the showerhead to an upper surface of the chamber. The collar includes a plurality of slots, is arranged around the stem portion of the showerhead, and directs purge gas through the plurality of slots into a region between the base portion of the showerhead and the upper surface of the chamber.

公开(公告)号：US09388494B2

公开(公告)日：2016-07-12

申请号：US13659231

申请日：2012-10-24

Applicant: Novellus Systems, Inc.

Inventor： Chunguang Xia ,  Ramesh Chandrasekharan ,  Douglas Keil ,  Edward J. Augustyniak ,  Karl Leeser

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/45525 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/5096 ,  H01J37/3244

Abstract: A substrate processing system includes a showerhead that comprises a base portion and a stem portion and that delivers precursor gas to a chamber. A collar connects the showerhead to an upper surface of the chamber. The collar includes a plurality of slots, is arranged around the stem portion of the showerhead, and directs purge gas through the plurality of slots into a region between the base portion of the showerhead and the upper surface of the chamber.

Abstract translation: 衬底处理系统包括喷头，其包括基部和杆部分，并将前体气体输送到室。 衣领将花洒连接到房间的上表面。 所述套环包括多个槽，围绕所述喷头的所述杆部分布置，并且将吹扫气体引导通过所述多个狭槽进入所述喷头的基部与所述室的所述上表面之间的区域中。

公开(公告)号：US20150007770A1

公开(公告)日：2015-01-08

申请号：US13934597

申请日：2013-07-03

Applicant: Novellus Systems, Inc.

Inventor： Ramesh Chandrasekharan ,  Jennifer L. Petraglia

IPC: H01L21/02 ,  C23C16/455

CPC classification number: C23C16/45572 ,  B05B1/18 ,  C23C16/45565 ,  C23C16/45574

Abstract: A dual-temperature, multi-plenum showerhead for use in semiconductor processing equipment is described. The showerhead may supply multiple separate gases to a wafer reaction area while keeping the gases largely segregated within the showerhead. Additionally, the showerhead may be configured to allow a faceplate of the showerhead to be maintained at a significantly higher temperature than the rest of the showerhead.

Abstract translation: 描述了一种用于半导体加工设备的双温度多通风淋浴喷头。 淋浴头可以向晶片反应区域供应多个单独的气体，同时保持气体在淋浴喷头内部大大分离。 此外，喷头可以被配置成允许喷头的面板保持在比其余喷头的显着更高的温度。